Wafers ɗin Silica Carbide mai inci 2 6H ko 4H N-type ko Semi-Insulating SiC Substrates
Kayayyakin da aka ba da shawarar
Wafer SiC mai nau'in N-nau'i
Diamita: inci 2 50.8mm | inci 4 100mm | inci 6 150mm
Hanya: daga axis 4.0˚ zuwa <1120> ± 0.5˚
Juriyar juriya: < 0.1 ohm.cm
Taushi: Si-face CMP Ra <0.5nm, C-face polish na gani Ra <1 nm
Wafer mai rufi ...
Diamita: inci 2 50.8mm | inci 4 100mm | inci 6 150mm
Hanya: a kan axis {0001} ± 0.25˚
Juriyar Juriya: >1E5 ohm.cm
Taushi: Si-face CMP Ra <0.5nm, C-face polish na gani Ra <1 nm
1. Kayayyakin more rayuwa na 5G -- samar da wutar lantarki ta sadarwa
Samar da wutar lantarki ta sadarwa ita ce tushen makamashi don sadarwa ta uwar garken da tashar tushe. Tana samar da wutar lantarki ga kayan aikin watsawa daban-daban don tabbatar da aiki yadda ya kamata na tsarin sadarwa.
2. Tarin sabbin motocin makamashi -- tsarin wutar lantarki na tarin caji
Ana iya samun ingantaccen aiki da ƙarfin ƙarfin na'urar ƙarfin caji ta hanyar amfani da silicon carbide a cikin na'urar ƙarfin caji ta, don inganta saurin caji da rage farashin caji.
3. Babban cibiyar bayanai, Intanet na Masana'antu -- samar da wutar lantarki ta uwar garken
Samar da wutar lantarki ta uwar garken ita ce ɗakin karatu na makamashin uwar garken. Uwar garken tana ba da wutar lantarki don tabbatar da aiki na yau da kullun na tsarin uwar garken. Amfani da abubuwan wutar lantarki na silicon carbide a cikin samar da wutar lantarki na uwar garken na iya inganta yawan wutar lantarki da ingancin wutar lantarki ta uwar garken, rage yawan cibiyar bayanai gaba ɗaya, rage jimlar farashin gini na cibiyar bayanai, da kuma cimma ingantaccen muhalli.
4. Uhv - Amfani da na'urorin watsawa masu sassauƙa na DC
5. Jirgin ƙasa mai sauri tsakanin birane da kuma hanyar jirgin ƙasa tsakanin birane -- masu sauya wutar lantarki, masu canza wutar lantarki ta lantarki, masu sauya wutar lantarki, da kuma masu samar da wutar lantarki ta taimako.
Ƙayyadewa
Cikakken Zane




