Layin sarrafa kansa na Silicon / Silicon Carbide (SiC) Wafer Layin sarrafa kansa mai matakai huɗu mai haɗe (Layin sarrafa bayan gogewa)

Layin sarrafa kansa na Silicon / Silicon Carbide (SiC) Wafer Layin sarrafa kansa mai matakai huɗu (Layin sarrafa bayan gogewa) Hoton da aka nuna

Takaitaccen Bayani:

Wannan Layin Gyaran Kayan Aiki Mai Haɗaka Mai Mataki Huɗu mafita ce ta haɗaka, a layi wanda aka tsara donbayan gogewa / bayan CMPayyukansiliconkumasilicon carbide (SiC)Wafers. An gina shi a kusamasu ɗaukar yumbu (faranti na yumbu), tsarin ya haɗa ayyuka da yawa na ƙasa zuwa layi ɗaya mai daidaitawa - yana taimakawa masana'antun rage sarrafa hannu, daidaita lokacin aiki, da ƙarfafa sarrafa gurɓatawa.

Aika mana imel

Siffofi

Cikakken Zane

Layin sarrafa kansa na Silicon / Silicon Carbide (SiC) Wafer Layin sarrafa kansa mai matakai huɗu mai haɗe (Layin sarrafa bayan gogewa)4

Bayani

A cikin masana'antar semiconductor,ingantaccen tsaftacewa bayan CMPan san shi sosai a matsayin muhimmin mataki don rage lahani kafin tsari na gaba, da kuma hanyoyin ci gaba (gami datsaftacewa mai girma) ana yawan tattaunawa akai-akai don inganta aikin cire ƙwayoyin cuta.

Musamman ga SiC, yana dababban tauri da rashin ƙarfin sinadaraiyana sa gogewa ta zama ƙalubale (sau da yawa yana da alaƙa da ƙarancin saurin cire kayan aiki da kuma haɗarin lalacewar saman/ƙasa), wanda hakan ke sa daidaiton sarrafa kansa bayan gogewa da tsaftacewa/mayar da hankali ya zama da matuƙar muhimmanci.

Wafer Silikon / Silicon Carbide (SiC) Layin sarrafa kansa mai matakai huɗu mai haɗin gwiwa (Layin sarrafa bayan gogewa)5

Layin sarrafa kansa na Silicon / Silicon Carbide (SiC) Wafer Layin sarrafa kansa mai matakai huɗu mai haɗe (Layin sarrafa bayan gogewa)2

Muhimman Fa'idodi

Layi ɗaya da aka haɗa wanda ke tallafawa:

Rabawa da tattara Wafer(bayan an goge)
Ma'ajiyar kaya/ajiyar kayan yumbu
Tsaftace kayan ɗaukar yumbu
Haɗa Wafer (manna) a kan masu ɗaukar yumbu
Haɗaɗɗen aiki, layi ɗaya donWafers mai inci 6–8

Bayanan Fasaha (Daga Takardar Bayanai da Aka Ba da)

Girman Kayan Aiki (L×W×H):13643 × 5030 × 2300 mm
Tushen wutan lantarki:AC 380 V, 50 Hz
Jimlar Ƙarfi:119 kW
Tsabtace Hawa:0.5 μm < 50 μm; 5 μm < 1 μm
Faɗin Haɗawa:≤ 2 μm

Nassoshi game da yadda za a samu bayanai (Daga Takardar Bayanai da aka bayar)

Girman Kayan Aiki (L×W×H):13643 × 5030 × 2300 mm
Tushen wutan lantarki:AC 380 V, 50 Hz
Jimlar Ƙarfi:119 kW
Tsabtace Hawa:0.5 μm < 50 μm; 5 μm < 1 μm
Faɗin Haɗawa:≤ 2 μm

Gudun Layi na Yau da Kullum

Ciyarwa / hanyar sadarwa daga yankin gogewa na sama
Rabawa da tattara Wafer
Buffering/ajiya mai ɗaukar kaya na yumbu (ƙulla haɗin kai na ɗan lokaci)
Tsaftace kayan ɗaukar yumbu
Sanya Wafer a kan masu ɗaukar kaya (tare da tsafta da kuma kula da lanƙwasa)
Ci gaba da aiki zuwa tsarin aiki ko dabaru na ƙasa

Tambayoyin da ake yawan yi akai-akai

T1: Waɗanne matsaloli ne wannan layin ya fi magancewa?
A: Yana sauƙaƙa ayyukan bayan gogewa ta hanyar haɗa rabuwa/tarin wafer, ma'ajiyar kayan ɗaukar yumbu, tsaftace kayan ɗaukar kaya, da kuma saka wafer cikin layin sarrafa kansa guda ɗaya mai daidaitawa - yana rage wuraren taɓawa da hannu da kuma daidaita tsarin samarwa.

Q2: Waɗanne kayan wafer da girma dabam dabam ne ake tallafawa?
A:Silicon da SiC,Inci 6–8wafers (bisa ga ƙayyadadden bayanin da aka bayar).

T3: Me yasa ake jaddada tsaftacewa bayan CMP a masana'antar?
A: Littattafan masana'antu sun nuna cewa buƙatar ingantaccen tsaftacewa bayan CMP ya ƙaru don rage yawan lahani kafin mataki na gaba; ana yin nazarin hanyoyin da suka dogara da megasonic don inganta cire ƙwayoyin cuta.

game da Mu

XKH ta ƙware a fannin haɓaka fasaha, samarwa, da kuma sayar da gilashin gani na musamman da sabbin kayan lu'ulu'u. Kayayyakinmu suna ba da kayan lantarki na gani, na'urorin lantarki na masu amfani, da kuma sojoji. Muna ba da kayan gani na Sapphire, murfin ruwan tabarau na wayar hannu, yumbu, LT, Silicon Carbide SIC, Quartz, da wafers na lu'ulu'u na semiconductor. Tare da ƙwarewa mai ƙwarewa da kayan aiki na zamani, mun yi fice a fannin sarrafa samfura marasa tsari, da nufin zama babban kamfanin fasahar zamani na kayan lantarki na optoelectronic.