Silicon Dioxide wafer SiO2 wafer mai kauri mai gogewa, Firayim da Matsayin Gwaji

Silicon Dioxide wafer SiO2 wafer mai kauri mai kauri mai gogewa, Firayim da Filayen Matsayin Gwaji

Takaitaccen Bayani:

Thermal hadawan abu da iskar shaka ne sakamakon fallasa wani siliki wafer zuwa hade da oxidizing jamiái da zafi don yin Layer na silicon dioxide (SiO2) .Mu kamfanin iya siffanta silicon dioxide oxide flakes tare da daban-daban sigogi ga abokan ciniki, da kyau kwarai quality; oxide Layer kauri, compactness, uniformity da resistivity crystal fuskantarwa ana aiwatar da su daidai da ka'idodin ƙasa.

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Cikakken Bayani

Tags samfurin

Gabatar da akwatin wafer

Samfura	Thermal Oxide (Si + SiO2) wafers
Hanyar samarwa	LPCVD
Gyaran Fannin	SSP/DSP
Diamita	2inch/3inch/4inch/5inch/6inch
Nau'in	Nau'in P / N
Oxidation Layer kauri	100nm ~ 1000nm
Gabatarwa	<100> <111>
Lantarki resistivity	0.001-25000 (Ω•cm)
Aikace-aikace	An yi amfani da shi don jigilar samfurin radiation na synchrotron, PVD/CVD shafi a matsayin substrate, samfurin sputtering girma samfurin, XRD, SEM,Atomic karfi, infrared spectroscopy, fluorescence spectroscopy da sauran gwajin gwaji substrates, kwayoyin katako epitaxial girma substrates, X-ray bincike na crystalline semiconductor.

Silicon oxide wafers su ne silicon dioxide fina-finan girma a saman silikon wafers ta hanyar oxygen ko ruwa tururi a high yanayin zafi (800 ° C ~ 1150 ° C) ta amfani da thermal hadawan abu da iskar shaka tsari tare da yanayi matsa lamba tanderu tube kayan aiki. A kauri daga cikin tsari jeri daga 50 nanometers zuwa 2 microns, tsari zafin jiki ne har zuwa 1100 digiri Celsius, da girma Hanyar zuwa kashi "rigar oxygen" da "bushe oxygen" iri biyu. Thermal Oxide shine Layer oxide "girma", wanda ke da daidaituwa mafi girma, mafi kyawun ƙima da ƙarfin dielectric fiye da yadudduka na oxide na CVD, yana haifar da inganci mafi girma.

Dry Oxygen Oxidation

Silicon yana amsawa tare da oxygen kuma Layer oxide yana motsawa akai-akai zuwa Layer Layer. Busassun iskar shaka yana buƙatar yin aiki a yanayin zafi daga 850 zuwa 1200 ° C, tare da ƙananan ƙimar girma, kuma ana iya amfani da shi don haɓakar kofa na MOS. An fi son bushewar iskar shaka a kan rigar hadawan abu da iskar shaka lokacin da ake buƙatar babban inganci, siliki oxide Layer ultra-bakin ciki. Dry hadawan abu da iskar shaka iya aiki: 15nm ~ 300nm.

2. Rigar Oxidation

Wannan hanya tana amfani da tururi na ruwa don samar da Layer oxide ta shigar da bututun tanderun a ƙarƙashin yanayin zafi mai girma. A densification na rigar oxygen hadawan abu da iskar shaka ne dan kadan muni fiye da bushe oxygen hadawan abu da iskar shaka, amma idan aka kwatanta da bushe oxygen hadawan abu da iskar shaka amfani da shi ne cewa yana da mafi girma girma kudi, dace da fiye da 500nm fim girma. Rigar hadawan abu da iskar shaka iya aiki: 500nm ~ 2µm.

AEMD ta yanayi matsa lamba hadawan abu da iskar shaka tanderu tube ne Czech kwance makera tube, wanda aka halin high tsari kwanciyar hankali, mai kyau film uniformity da kuma m barbashi iko. Bututun murhun wuta na silicon oxide na iya sarrafa har zuwa wafers 50 a kowane bututu, tare da intra- da intra-wafers mai kyau iri ɗaya.