Wafer ɗin silicon dioxide mai kauri SiO2 mai gogewa, mai inganci da kuma matakin gwaji
Gabatar da akwatin wafer
| Samfuri | Wafers ɗin thermal Oxide (Si+SiO2) |
| Hanyar Samarwa | LPCVD |
| Goge saman | SSP/DSP |
| diamita | 2 inci / 3 inci / 4 inci / 5 inci / 6 inci |
| Nau'i | Nau'in P / Nau'in N |
| Kauri na Layer na Oxidation | 100nm ~ 1000nm |
| Hanya | <100> <111> |
| juriyar lantarki | 0.001-25000(Ω•cm) |
| Aikace-aikace | Ana amfani da shi don ɗaukar samfurin hasken synchrotron, shafi na PVD/CVD azaman substrate, samfurin girma na magnetron sputtering, XRD, SEM,Ƙarfin atomic, infrared spectroscopy, fluorescence spectroscopy da sauran substrates na gwajin bincike, substrates na girma na epitaxial na ƙwayoyin halitta, nazarin X-ray na semiconductors na kristal |
Wafers ɗin silicon oxide sune fina-finan silicon dioxide da ake nomawa a saman wafers ɗin silicon ta hanyar amfani da iskar oxygen ko tururin ruwa a yanayin zafi mai yawa (800°C ~ 1150°C) ta amfani da tsarin iskar shaka mai zafi tare da kayan aikin bututun matse iska. Kauri na aikin ya kama daga nanomita 50 zuwa microns 2, zafin aikin ya kai digiri 1100 na Celsius, hanyar girma an raba ta zuwa nau'i biyu na "iskar oxygen mai danshi" da "bushewar iskar oxygen". Thermal Oxide wani Layer ne na oxide mai "girma", wanda ke da daidaito mafi girma, mafi kyawun yawan yawa da kuma ƙarfin dielectric mafi girma fiye da yadudduka na oxide da aka ajiye a CVD, wanda ke haifar da inganci mafi kyau.
Busasshen Iskar Oxygen
Silicon yana amsawa da iskar oxygen kuma layin oxide yana ci gaba da tafiya zuwa ga layin substrate. Ana buƙatar yin amfani da busasshen iskar oxygen a yanayin zafi daga 850 zuwa 1200°C, tare da ƙarancin girma, kuma ana iya amfani da shi don haɓakar ƙofar MOS mai rufi. Ana fifita busasshen iskar oxygen fiye da danshi idan ana buƙatar Layer silicon oxide mai inganci, siriri sosai. Ƙarfin iskar oxygen na busasshe: 15nm ~ 300nm.
2. Ruwan iskar oxygen mai laushi
Wannan hanyar tana amfani da tururin ruwa don samar da wani Layer na oxide ta hanyar shiga cikin bututun tanderu a ƙarƙashin yanayin zafi mai yawa. Yawan iskar oxygen da ke cikin danshi ya ɗan fi muni fiye da iskar oxygen da ke busasshe, amma idan aka kwatanta da iskar oxygen da ke busasshe, fa'idarsa ita ce tana da ƙimar girma mafi girma, wanda ya dace da girman fim fiye da 500nm. Ƙarfin iskar oxygen da ke cikin danshi: 500nm ~ 2µm.
Bututun tanderun iskar shaka na AEMD bututu ne na tanderun da aka yi da Czech, wanda ke da kwanciyar hankali mai kyau, daidaiton fim mai kyau da kuma ingantaccen sarrafa barbashi. Bututun tanderun silicon oxide na iya sarrafa har zuwa wafers 50 a kowace bututu, tare da kyakkyawan daidaito a cikin da tsakanin wafers.
Cikakken Zane
