Jirgin Ruwa Mai Wafer na Silicon Carbide (SiC)

Takaitaccen Bayani:

Jirgin ruwan wafer na Silicon Carbide (SiC) wani nau'in kayan aikin semiconductor ne da aka yi da kayan SiC mai tsafta, wanda aka tsara don riƙewa da jigilar wafers yayin mahimman hanyoyin zafin jiki kamar epitaxy, oxidation, yaɗuwa, da annealing.


Siffofi

Cikakken Zane

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2_副本

Bayani na Gilashin Quartz

Jirgin ruwan wafer na Silicon Carbide (SiC) wani nau'in kayan aikin semiconductor ne da aka yi da kayan SiC mai tsafta, wanda aka tsara don riƙewa da jigilar wafers yayin mahimman hanyoyin zafin jiki kamar epitaxy, oxidation, yaɗuwa, da annealing.

Tare da saurin haɓaka na'urorin samar da wutar lantarki da na'urori masu faɗi, jiragen ruwan quartz na gargajiya suna fuskantar ƙuntatawa kamar nakasa a yanayin zafi mai yawa, gurɓataccen barbashi mai tsanani, da kuma ɗan gajeren lokacin aiki. Jiragen ruwan SiC wafer, waɗanda ke da ingantaccen kwanciyar hankali na zafi, ƙarancin gurɓatawa, da tsawon rai, suna ƙara maye gurbin jiragen ruwan quartz kuma suna zama zaɓi mafi kyau a masana'antar na'urorin SiC.

Mahimman Sifofi

1. Amfanin Kayan Aiki

  • An ƙera shi daga SiC mai tsarki mai ƙarfi tare dababban tauri da ƙarfi.

  • Wurin narkewa sama da 2700°C, ya fi na quartz yawa, yana tabbatar da kwanciyar hankali na dogon lokaci a cikin mawuyacin yanayi.

2. Halayen Zafi

  • Babban ƙarfin zafi don canja wurin zafi cikin sauri da daidaito, rage damuwa ga wafer.

  • Coefficient na faɗaɗa zafi (CTE) yana daidai da SiC substrates, yana rage ruɓewa da tsagewa.

3. Daidaiton Sinadarai

  • Yana da kwanciyar hankali a ƙarƙashin yanayin zafi mai yawa da yanayi daban-daban (H₂, N₂, Ar, NH₃, da sauransu).

  • Kyakkyawan juriya ga iskar shaka, yana hana rugujewa da samar da barbashi.

4. Aikin Tsarin Aiki

  • Santsi da kauri saman yana rage zubar da ƙwayoyin cuta da gurɓatawa.

  • Yana kiyaye daidaiton girma da ƙarfin kaya bayan amfani na dogon lokaci.

5. Ingantaccen Kuɗi

  • Tsawon rayuwar sabis sau 3-5 fiye da jiragen ruwa na quartz.

  • Rage yawan kulawa, rage lokacin hutu da kuma farashin maye gurbin.

Aikace-aikace

  • SiC Epitaxy: Yana tallafawa ƙananan SiC masu inci 4, inci 6, da inci 8 yayin girma mai zafi a cikin epitaxial.

  • Ƙirƙirar Na'urar Wutar Lantarki: Ya dace da SiC MOSFETs, Schottky Barrier Diodes (SBDs), IGBTs, da sauran na'urori.

  • Maganin Zafi: Tsarin shaƙatawa, nitride, da kuma tsarin carbonization.

  • Iskar Oxidation & Yaɗuwa: Dandalin tallafi mai ƙarfi na wafer don iskar shaka da yaɗuwa a zafin jiki mai yawa.

Bayanan Fasaha

Abu Ƙayyadewa
Kayan Aiki Tsarkakken Silikon Carbide (SiC)
Girman Wafer Inci 4 / Inci 6 / Inci 8 (ana iya gyara shi)
Matsakaicin Yanayin Aiki. ≤ 1800°C
Faɗaɗawar Zafi CTE 4.2 × 10⁻⁶ /K (kusa da SiC substrate)
Tsarin kwararar zafi 120–200 W/m·K
Taushin saman Ra < 0.2 μm
Daidaito tsakanin mutane ±0.1 mm
Rayuwar Sabis ≥ 3× fiye da jiragen ruwa na quartz

 

Kwatanta: Jirgin ruwa na Quartz da Jirgin ruwa na SiC

Girma Jirgin Ruwa na Quartz Jirgin ruwan SiC
Juriyar Zafin Jiki ≤ 1200°C, nakasawa a babban zafin jiki. ≤ 1800°C, mai karko a yanayin zafi
Daidaita CTE da SiC Babban rashin daidaito, haɗarin damuwa na wafer Rufe daidai, rage tsagewar wafer
Gurɓatar ƙwayoyin cuta Babban, yana haifar da ƙazanta Ƙasa, santsi da kuma kauri saman
Rayuwar Sabis Sauyawa kaɗan, akai-akai Dogon lokaci, tsawon rai 3-5×
Tsarin da ya dace Na al'ada Si epitaxy An inganta shi don na'urorin SiC epitaxy & wutar lantarki

 

Tambayoyi da Amsoshi - Jirgin Ruwa na Silicon Carbide (SiC) Wafer

1. Menene jirgin ruwan wafer na SiC?

Jirgin ruwan wafer na SiC wani nau'in mai ɗaukar nauyin aikin semiconductor ne da aka yi da silicon carbide mai tsafta. Ana amfani da shi don riƙewa da jigilar wafers a lokacin ayyukan zafi mai yawa kamar epitaxy, oxidation, yaɗuwa, da annealing. Idan aka kwatanta da jiragen ruwan quartz na gargajiya, jiragen ruwan wafer na SiC suna ba da kwanciyar hankali mai kyau na zafi, ƙarancin gurɓatawa, da tsawon rai na sabis.


2. Me yasa za a zaɓi jiragen ruwa na SiC wafer maimakon jiragen ruwa na quartz?

  • Juriyar zafin jiki mafi girma: Yana da ƙarfi har zuwa 1800°C idan aka kwatanta da quartz (≤1200°C).

  • Mafi kyawun daidaiton CTE: Kusa da SiC substrates, rage damuwa da fashewa.

  • Ƙara yawan ƙwayoyin cuta: Santsi da kauri saman yana rage gurɓatawa.

  • Tsawon rai: Ya fi jiragen ruwa na quartz sau 3-5 fiye da na kwale-kwalen quartz, wanda hakan ke rage farashin mallakar.


3. Waɗanne girman wafer jiragen ruwan wafer na SiC za su iya tallafawa?

Muna samar da tsare-tsare na yau da kullun donInci 4, inci 6, da inci 8wafers, tare da cikakken keɓancewa don biyan buƙatun abokin ciniki.


4. A cikin waɗanne hanyoyi ake amfani da jiragen ruwa na SiC wafer?

  • Girman epitaxial na SiC

  • Kera na'urorin semiconductor masu amfani da wutar lantarki (SiC MOSFETs, SBDs, IGBTs)

  • Ƙara yawan zafin jiki, nitride da carbonization

  • Tsarin hada iskar oxygen da yaɗuwa

game da Mu

XKH ta ƙware a fannin haɓaka fasaha, samarwa, da kuma sayar da gilashin gani na musamman da sabbin kayan lu'ulu'u. Kayayyakinmu suna ba da kayan lantarki na gani, na'urorin lantarki na masu amfani, da kuma sojoji. Muna ba da kayan gani na Sapphire, murfin ruwan tabarau na wayar hannu, yumbu, LT, Silicon Carbide SIC, Quartz, da wafers na lu'ulu'u na semiconductor. Tare da ƙwarewa mai ƙwarewa da kayan aiki na zamani, mun yi fice a fannin sarrafa samfura marasa tsari, da nufin zama babban kamfanin fasahar zamani na kayan lantarki na optoelectronic.

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