Silicon Carbide (SiC) Substrate Guda Ɗaya – Wafer 10×10mm

Takaitaccen Bayani:

Wafer ɗin single-crystal mai nauyin 10×10mm Silicon Carbide (SiC) wani abu ne mai ƙarfin aiki wanda aka tsara don amfani da na'urorin lantarki na zamani da kuma aikace-aikacen optoelectronic. Tare da ingantaccen yanayin zafi, faɗaɗɗen bandgip, da kuma kyakkyawan kwanciyar hankali na sinadarai, SiC substrates suna ba da tushe ga na'urorin da ke aiki yadda ya kamata a ƙarƙashin yanayin zafi mai yawa, mita mai yawa, da kuma yanayin ƙarfin lantarki mai yawa. Waɗannan substrates an yanke su daidai zuwa guntu murabba'i 10×10mm, waɗanda suka dace da bincike, ƙirƙirar samfura, da ƙera na'urori.


Siffofi

Cikakken Zane na Wafer ɗin Silicon Carbide (SiC)

Bayani game da wafer ɗin silicon carbide (SiC)

TheWafer ɗin single-crystal mai siffar silicon 10×10mm (SiC)wani abu ne mai ƙarfin aiki na semiconductor wanda aka tsara don amfani da na'urorin lantarki na zamani da aikace-aikacen optoelectronic. Tare da ingantaccen yanayin zafi, faɗaɗɗen bandgip, da ingantaccen kwanciyar hankali na sinadarai, wafer ɗin substrate na Silicon Carbide (SiC) yana ba da tushe ga na'urori waɗanda ke aiki yadda ya kamata a ƙarƙashin yanayin zafi mai yawa, mita mai yawa, da yanayin ƙarfin lantarki mai yawa. Waɗannan substrates an tsara su daidai gwargwado.10 × 10mm murabba'in kwakwalwan kwamfuta, ya dace da bincike, yin samfuri, da kuma ƙera na'urori.

Ka'idar Samarwa na wafer ɗin silicon carbide (SiC)

Ana ƙera wafer ɗin silicon Carbide (SiC) ta hanyar amfani da hanyoyin haɓaka tururin jiki (PVT) ko hanyoyin haɓaka sublimation. Tsarin yana farawa da foda SiC mai tsarki mai yawa da aka ɗora a cikin graphite crucible. A ƙarƙashin yanayin zafi mai tsanani wanda ya wuce 2,000°C da muhallin da aka sarrafa, foda ɗin yana shiga cikin tururi kuma yana sake zubawa a kan kristal iri mai hankali, yana samar da babban ingot na kristal guda ɗaya wanda aka rage lahani.

Da zarar an girma SiC boule, ana yin sa:

    • Yankan Ingot: Yankan waya na lu'u-lu'u masu kyau suna yanke ingot ɗin SiC zuwa wafers ko guntu.

 

    • Latsawa da niƙawa: An shimfida saman don cire alamun yankewa da kuma samun kauri iri ɗaya.

 

    • Gogewar Injin Kemikal (CMP): Yana cimma kammala madubi mai cikakken tsari tare da ƙarancin kauri sosai.

 

    • Yin amfani da maganin hana ƙwayoyin cuta na zaɓi: Ana iya gabatar da sinadarin nitrogen, aluminum, ko boron don daidaita halayen lantarki (nau'in n ko nau'in p).

 

    • Duba inganci: Tsarin gwaji mai zurfi yana tabbatar da cewa wafer ɗin ya yi daidai, daidaiton kauri, da kuma yawan lahani sun cika ƙa'idodin matakin semiconductor mai tsauri.

Wannan tsari mai matakai da yawa yana haifar da ƙwayoyin wafer masu ƙarfi na 10×10mm Silicon Carbide (SiC) waɗanda suka shirya don haɓakar epitaxial ko ƙera na'urori kai tsaye.

Halayen Kayan Aiki na Wafer ɗin Silicon Carbide (SiC)

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Wafer ɗin silicon carbide (SiC) an yi shi ne da farko daga4H-SiC or 6H-SiCnau'ikan da ba a saba gani ba:

  • 4H-SiC:Yana da ƙarfin motsi na lantarki, wanda hakan ya sa ya dace da na'urorin wutar lantarki kamar MOSFETs da Schottky diodes.

  • 6H-SiC:Yana bayar da kayyayaki na musamman ga abubuwan RF da optoelectronic.

Muhimman halaye na zahiri na wafer ɗin silicon carbide (SiC):

  • Faɗin bandeji:~3.26 eV (4H-SiC) – yana ba da damar ƙarfin lantarki mai ƙarfi da ƙarancin asarar sauyawa.

  • Maido da yanayin zafi:3–4.9 W/cm·K – yana wargaza zafi yadda ya kamata, yana tabbatar da kwanciyar hankali a cikin tsarin da ke da ƙarfin lantarki mai yawa.

  • Tauri:~9.2 akan sikelin Mohs - yana tabbatar da dorewar injina yayin sarrafawa da aikin na'ura.

Amfani da wafer ɗin silicon carbide (SiC)

Amfanin wafer ɗin silicon Carbide (SiC) mai yawa yana sa su zama masu amfani a fannoni daban-daban:

Lantarki Mai Lantarki: Tushen MOSFETs, IGBTs, da Schottky diodes da ake amfani da su a cikin motocin lantarki (EVs), samar da wutar lantarki a masana'antu, da kuma inverters masu sabuntawa.

Na'urorin RF & Microwave: Yana tallafawa transistor, amplifiers, da sassan radar don aikace-aikacen 5G, tauraron dan adam, da tsaro.

Optoelectronics: Ana amfani da shi a cikin hasken UV, na'urorin gano haske, da kuma na'urorin laser inda hasken UV mai haske da kwanciyar hankali suke da mahimmanci.

Aerospace & Defense: Ingantaccen abu don na'urorin lantarki masu zafi mai yawa da hasken rana.

Cibiyoyin Bincike da Jami'o'i: Ya dace da nazarin kimiyyar kayan aiki, ƙirƙirar na'urori na gwaji, da kuma gwada sabbin hanyoyin epitaxial.

Bayani dalla-dalla game da Kwakwalwar wafer ta Silicon Carbide (SiC)

Kadara darajar
Girman 10mm × 10mm murabba'i
Kauri 330–500 μm (wanda za a iya keɓancewa)
Nau'in Polytype 4H-SiC ko 6H-SiC
Hanya C-plane, ba tare da axis ba (0°/4°)
Ƙarshen Fuskar An goge gefe ɗaya ko gefe biyu; akwai shirye-shirye a shirye
Zaɓuɓɓukan Doping Nau'in N ko nau'in P
Matsayi Matsayin bincike ko matakin na'ura

Tambayoyin da ake yawan yi game da wafer ɗin silicon carbide (SiC)

T1: Me ya sa wafer ɗin silicon Carbide (SiC) ya fi wafer ɗin silicon na gargajiya kyau?
SiC yana ba da ƙarfin filin fashewa mai ƙarfi na 10×, juriya mai kyau ga zafi, da kuma ƙarancin asarar sauyawa, wanda hakan ya sa ya dace da na'urori masu ƙarfi da inganci waɗanda silicon ba zai iya tallafawa ba.

T2: Za a iya samar da wafer ɗin substrate mai nauyin 10×10mm Silicon Carbide (SiC) tare da yadudduka na epitaxial?
Eh. Muna samar da substrates masu shirye-shirye kuma muna iya isar da wafers tare da yadudduka na musamman na epitaxial don biyan takamaiman buƙatun masana'antar wutar lantarki ko LED.

Q3: Shin ana samun girma dabam dabam da matakan doping na musamman?
Hakika. Duk da cewa kwakwalwan 10×10mm daidaitacce ne don bincike da ɗaukar samfurin na'urori, ana samun girma na musamman, kauri, da bayanan doping akan buƙata.

T4: Yaya waɗannan wafers ɗin suke da ƙarfi a cikin mawuyacin yanayi?
SiC tana kiyaye ingancin tsarin aiki da aikin lantarki sama da 600°C da kuma ƙarƙashin hasken rana mai ƙarfi, wanda hakan ya sa ya dace da na'urorin lantarki na sararin samaniya da na soja.

game da Mu

XKH ta ƙware a fannin haɓaka fasaha, samarwa, da kuma sayar da gilashin gani na musamman da sabbin kayan lu'ulu'u. Kayayyakinmu suna ba da kayan lantarki na gani, na'urorin lantarki na masu amfani, da kuma sojoji. Muna ba da kayan gani na Sapphire, murfin ruwan tabarau na wayar hannu, yumbu, LT, Silicon Carbide SIC, Quartz, da wafers na lu'ulu'u na semiconductor. Tare da ƙwarewa mai ƙwarewa da kayan aiki na zamani, mun yi fice a fannin sarrafa samfura marasa tsari, da nufin zama babban kamfanin fasahar zamani na kayan lantarki na optoelectronic.

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