Silicon Carbide (SiC) Single-Crystal Substrate - 10 × 10mm Wafer
Cikakken zane na Silicon Carbide (SiC) wafer substrate
Bayanin Silicon Carbide (SiC) wafer substrate
The10×10mm Silicon Carbide (SiC) guda-crystal substrate waferbabban aiki ne na semiconductor abu wanda aka tsara don na'urorin lantarki na gaba na gaba da aikace-aikacen optoelectronic. Yana nuna ƙayyadaddun ƙayyadaddun yanayin zafi, babban bandeji, da ingantaccen kwanciyar hankali na sinadarai, Silicon Carbide (SiC) wafer wafer yana ba da tushe don na'urorin da ke aiki da kyau a ƙarƙashin babban zafin jiki, mitar mita, da yanayin ƙarfin lantarki. Wadannan substrates an yi daidai-yanke cikin10 × 10mm square kwakwalwan kwamfuta, manufa don bincike, samfuri, da ƙirƙira na'ura.
Ƙa'idar Samar da Silicon Carbide (SiC) wafer substrate
Silicon Carbide (SiC) wafer ɗin da aka kera ana kera shi ta hanyar jigilar Jiki (PVT) ko hanyoyin haɓaka haɓaka. Tsarin yana farawa tare da tsaftataccen SiC foda wanda aka ɗora a cikin ƙwanƙwasa graphite. Ƙarƙashin matsanancin yanayin zafi da ya wuce 2,000°C da muhallin sarrafawa, foda ya koma cikin tururi kuma ya sake ajiyar ajiya akan kristal iri mai kyau, yana samar da babban, ƙarancin lahani guda kristal ingot.
Da zarar SiC boule ya girma, yana jurewa:
- Yankan Ingot: Madaidaicin sawduwar wayar lu'u-lu'u ta yanke ingot na SiC cikin wafers ko guntu.
- Lapping da nika: Ana baje kolin filaye don cire alamun gani da kuma cimma kauri iri ɗaya.
- Kemikal Mechanical Polishing (CMP): Ya cimma kammala shirye-shiryen madubi tare da ƙarancin ƙarancin ƙasa.
- Doping na zaɓi: Nitrogen, aluminum, ko boron doping za a iya gabatar da su don daidaita kayan lantarki (n-type ko p-type).
- Ingancin dubawa: Advanced metrology yana tabbatar da shimfidar wafer, daidaiton kauri, da ƙarancin lahani sun haɗu da ƙaƙƙarfan bukatu na semiconductor.
Wannan tsari na matakai da yawa yana haifar da ƙwanƙwasa 10 × 10mm Silicon Carbide (SiC) ƙananan kwakwalwan wafer waɗanda ke shirye don haɓaka epitaxial ko ƙirƙira na'urar kai tsaye.
Halayen Material na Silicon Carbide (SiC) wafer substrate
Silicon Carbide (SiC) wafer ɗin da aka yi da farko an yi shi da shi4H-SiC or 6H-SiCpolytypes:
-
4H-SiC:Yana da babban motsi na lantarki, yana mai da shi manufa don na'urorin wuta kamar MOSFETs da Schottky diodes.
-
6H-SIC:Yana ba da kaddarori na musamman don RF da abubuwan haɗin optoelectronic.
Maɓalli na zahiri na Silicon Carbide (SiC) wafer substrate:
-
Fadin bandeji:~ 3.26 eV (4H-SiC) - yana ba da damar haɓaka ƙarfin lantarki mai ƙarfi da ƙarancin canzawa.
-
Thermal conductivity:3-4.9 W / cm · K - yana watsar da zafi yadda ya kamata, yana tabbatar da kwanciyar hankali a cikin tsarin wutar lantarki.
-
Tauri:~ 9.2 akan sikelin Mohs - yana tabbatar da dorewa na injiniya yayin aiki da na'urar aiki.
Aikace-aikace na Silicon Carbide (SiC) wafer substrate
Haɓakar Silicon Carbide (SiC) wafern wafer yana ba su daraja a cikin masana'antu da yawa:
Kayan Wutar Lantarki: Tushen don MOSFETs, IGBTs, da Schottky diodes da ake amfani da su a cikin motocin lantarki (EVs), samar da wutar lantarki na masana'antu, da inverter masu sabunta makamashi.
RF & Na'urorin Microwave: Yana goyan bayan transistor, amplifiers, da abubuwan radar don 5G, tauraron dan adam, da aikace-aikacen tsaro.
Optoelectronics: Ana amfani da su a cikin LEDs UV, masu gano hoto, da diodes na laser inda babban bayyananniyar UV da kwanciyar hankali ke da mahimmanci.
Aerospace & Defence: Dogara mai ƙarfi don yanayin zafi mai zafi, na'urorin lantarki masu taurin radiyo.
Cibiyoyin Bincike & Jami'o'i: Mafi dacewa don nazarin kimiyyar kayan aiki, haɓaka na'urar samfuri, da gwada sabbin hanyoyin epitaxial.
Ƙididdiga don Silicon Carbide (SiC) Substrate wafer Chips
| Dukiya | Daraja |
|---|---|
| Girman | 10mm × 10mm murabba'i |
| Kauri | 330-500 μm (mai iya canzawa) |
| Polytype | 4H-SiC ko 6H-SiC |
| Gabatarwa | C-jirgin sama, kashe-axis (0°/4°) |
| Ƙarshen Sama | Gefe guda ɗaya ko mai goge gefe biyu; Epi-shirye akwai |
| Zaɓuɓɓukan Doping | N-type ko P-type |
| Daraja | Matsayin bincike ko darajar na'ura |
FAQ na Silicon Carbide (SiC) wafer substrate
Q1: Me yasa Silicon Carbide (SiC) substrate wafer ya fi wafern siliki na gargajiya?
SiC yana ba da ƙarfin 10 × mafi girman rushewar filin, tsayayyar zafi mafi girma, da ƙananan asarar canzawa, yana sa ya zama manufa don ingantaccen aiki, na'urori masu ƙarfi waɗanda silicon ba zai iya tallafawa ba.
Q2: Za a iya ba da 10 × 10mm Silicon Carbide (SiC) wafer substrate tare da yadudduka na epitaxial?
Ee. Muna ba da shirye-shiryen da aka shirya kuma muna iya isar da wafers tare da yadudduka na epitaxial na al'ada don saduwa da takamaiman na'urar wuta ko buƙatun masana'antar LED.
Q3: Akwai masu girma dabam na al'ada da matakan doping?
Lallai. Yayin da kwakwalwan kwamfuta 10 × 10mm daidai suke don bincike da samfurin na'urar, girman al'ada, kauri, da bayanan bayanan doping suna samuwa akan buƙata.
Q4: Yaya waɗannan wafers suke dawwama a cikin matsanancin yanayi?
SiC tana kiyaye mutuncin tsari da aikin lantarki sama da 600°C kuma a ƙarƙashin babban radiation, yana mai da shi manufa don sararin samaniya da na'urorin lantarki na matakin soja.
Game da Mu
XKH ya ƙware a cikin haɓaka fasahar fasaha, samarwa, da tallace-tallace na gilashin gani na musamman da sabbin kayan kristal. Kayayyakinmu suna hidimar kayan lantarki na gani, na'urorin lantarki na mabukaci, da sojoji. Muna ba da abubuwan haɗin gani na Sapphire, murfin ruwan tabarau na wayar hannu, Ceramics, LT, Silicon Carbide SIC, Quartz, da wafers kristal semiconductor. Tare da ƙwararrun ƙwararrun ƙwararrun ƙwararrun ƙwararrun kayan aiki, mun yi fice a cikin sarrafa samfuran da ba daidai ba, da nufin zama babban kamfani na kayan fasaha na optoelectronic.
