Silicon Carbide SiC Ingot 6inch N nau'in Dummy/prime grade kauri ba zai iya musamman

Takaitaccen Bayani:

Silicon Carbide (SiC) wani abu ne mai fa'ida mai fa'ida wanda ke samun jan hankali a cikin masana'antu daban-daban saboda ingantaccen kayan lantarki, thermal, da injina. SiC Ingot a cikin nau'in 6-inch N-type Dummy/Prime an tsara shi musamman don samar da na'urori masu mahimmanci na ci gaba, gami da babban iko da aikace-aikace masu ƙarfi. Tare da zaɓuɓɓukan kauri da za'a iya daidaita su da ƙayyadaddun ƙayyadaddun bayanai, wannan SiC ingot yana ba da kyakkyawar mafita don haɓaka na'urorin da ake amfani da su a cikin motocin lantarki, tsarin wutar lantarki, sadarwa, da sauran sassa masu inganci. Ƙarfin SiC a cikin babban ƙarfin lantarki, yanayin zafi mai zafi, da yanayin mita mai yawa yana tabbatar da dogon lokaci, ingantaccen aiki, da ingantaccen aiki a cikin aikace-aikace iri-iri.
SiC Ingot yana samuwa a cikin girman 6-inch, tare da diamita na 150.25mm ± 0.25mm da kauri fiye da 10mm, yana sa ya dace don slicing wafer. Wannan samfurin yana ba da ingantacciyar ma'auni na 4° zuwa <11-20> ± 0.2°, yana tabbatar da daidaitattun ƙirƙira na na'ura. Bugu da ƙari, ingot ɗin yana fasalta matakin farko na lebur na <1-100> ± 5°, yana ba da gudummawa ga ingantacciyar daidaituwar crystal da aikin sarrafawa.
Tare da babban juriya a cikin kewayon 0.015-0.0285 Ω · cm, ƙananan ƙananan micropipe na <0.5, da kyakkyawan ingancin gefen, wannan SiC Ingot ya dace da samar da na'urorin lantarki waɗanda ke buƙatar ƙananan lahani da babban aiki a ƙarƙashin matsanancin yanayi.


Cikakken Bayani

Tags samfurin

Kayayyaki

Daraja: Matsayin Ƙirƙira (Dummy/Prime)
Girman: 6-inch diamita
Diamita: 150.25mm ± 0.25mm
Kauri:> 10mm (kauri na musamman yana samuwa akan buƙata)
Fuskar Fuska: 4° zuwa <11-20> ± 0.2°, wanda ke tabbatar da ingancin kristal mai girma da daidaitaccen jeri don ƙirƙira na'urar.
Hannun Hannu na Farko: <1-100> ± 5°, siffa mai mahimmanci don ingantaccen slicing na ingot cikin wafers kuma don ingantaccen ci gaban crystal.
Tsawon Lantarki na Farko: 47.5mm ± 1.5mm, an tsara shi don sauƙin sarrafawa da yankan daidai.
Resistivity: 0.015-0.0285 Ω · cm, manufa don aikace-aikace a cikin manyan na'urorin wutar lantarki.
Maƙarƙashiyar Ƙarfafa: <0.5, yana tabbatar da ƙarancin lahani waɗanda zasu iya tasiri aikin na'urorin ƙirƙira.
BPD (Boron Pitting Density): <2000, ƙaramin ƙima wanda ke nuna babban tsarkin kristal da ƙarancin ƙarancin lahani.
TSD (Threading Screw Dislocation Density): <500, tabbatar da kyakkyawan ingancin kayan aiki don manyan na'urori.
Yankunan Polytype: Babu - ingot ba shi da lahani daga lahani na nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in_ingot da lahani, yana ba da ingancin kayan inganci don aikace-aikace masu tsayi.
Edge Indents: <3, tare da faɗin 1mm da zurfin, yana tabbatar da ƙarancin lalacewa da kuma kiyaye amincin ingot don ingantaccen yankan wafer.
Ƙarƙashin Ƙarƙashin Ƙaƙwalwa: 3, <1mm kowanne, tare da ƙananan abin da ya faru na lalacewa ta gefe, tabbatar da amintaccen kulawa da ƙarin aiki.
Shiryawa: Casin Wafer - SiC ingot an cika shi amintacce a cikin akwati na wafer don tabbatar da jigilar kaya da kulawa.

Aikace-aikace

Wutar Lantarki:SiC ingot 6-inch ana amfani dashi sosai wajen samar da na'urorin lantarki masu ƙarfi kamar MOSFETs, IGBTs, da diodes, waɗanda sune mahimman abubuwan haɗin gwiwa a cikin tsarin juyawa wutar lantarki. Ana amfani da waɗannan na'urori a ko'ina a cikin injin injin lantarki (EV), injin injin masana'antu, samar da wutar lantarki, da tsarin ajiyar makamashi. Ikon SiC don yin aiki a babban ƙarfin lantarki, mitoci masu girma, da matsanancin yanayin zafi ya sa ya dace don aikace-aikace inda na'urorin silicon (Si) na al'ada zasu yi gwagwarmaya don yin aiki yadda ya kamata.

Motocin Lantarki (EVs):A cikin motocin lantarki, abubuwan da ke tushen SiC suna da mahimmanci don haɓaka nau'ikan wutar lantarki a cikin inverters, masu canza DC-DC, da caja kan kan jirgi. Maɗaukakin haɓakar zafin jiki na SiC yana ba da damar rage haɓakar zafi da ingantaccen aiki a cikin canjin wutar lantarki, wanda ke da mahimmanci don haɓaka aikin aiki da kewayon motocin lantarki. Bugu da ƙari, na'urorin SiC suna ba da ƙarami, haske, da ƙarin abin dogaro, suna ba da gudummawa ga ɗaukacin tsarin EV.

Tsarin Makamashi Mai Sabuntawa:SiC ingots wani abu ne mai mahimmanci a cikin haɓaka na'urorin canza wutar lantarki da aka yi amfani da su a cikin tsarin makamashi mai sabuntawa, ciki har da masu canza hasken rana, injin turbin iska, da hanyoyin ajiyar makamashi. Babban ƙarfin sarrafa wutar lantarki na SiC da ingantaccen sarrafa zafin jiki yana ba da damar ingantaccen canjin makamashi da ingantaccen aminci a cikin waɗannan tsarin. Amfani da shi a cikin makamashi mai sabuntawa yana taimakawa wajen fitar da ƙoƙarin duniya don dorewar makamashi.

Sadarwa:SiC ingot 6-inch shima ya dace don samar da abubuwan da aka yi amfani da su a aikace-aikacen RF mai ƙarfi (mitar rediyo). Waɗannan sun haɗa da amplifiers, oscillators, da filters da ake amfani da su wajen sadarwa da tsarin sadarwar tauraron dan adam. Ƙarfin SiC don ɗaukar manyan mitoci da babban iko ya sa ya zama kyakkyawan abu don na'urorin sadarwa waɗanda ke buƙatar aiki mai ƙarfi da ƙarancin sigina.

Aerospace da Tsaro:Babban ƙarfin rugujewar SiC da juriya ga yanayin zafi sun sa ya dace don aikace-aikacen sararin samaniya da tsaro. Abubuwan da aka yi daga SiC ingots ana amfani da su a cikin tsarin radar, sadarwar tauraron dan adam, da na'urorin lantarki don jiragen sama da na sararin samaniya. Abubuwan da ke tushen SiC suna ba da damar tsarin sararin samaniya don yin aiki a ƙarƙashin matsanancin yanayin da aka fuskanta a sararin samaniya da wurare masu tsayi.

Kayan Automatin Masana'antu:A cikin sarrafa kansa na masana'antu, ana amfani da abubuwan SiC a cikin na'urori masu auna firikwensin, masu kunnawa, da tsarin sarrafawa waɗanda ke buƙatar aiki a cikin yanayi mai tsauri. Ana amfani da na'urori masu tushen SiC a cikin injina waɗanda ke buƙatar ingantattun abubuwa masu ɗorewa, masu ɗorewa masu iya jure yanayin zafi da matsalolin lantarki.

Teburin Ƙimar Samfur

Dukiya

Ƙayyadaddun bayanai

Daraja Production (Dummy/Prime)
Girman 6 inci
Diamita 150.25mm ± 0.25mm
Kauri > 10mm (wanda aka saba da shi)
Hannun saman 4° zuwa <11-20> ± 0.2°
Hannun Filayen Firamare <1-100> ± 5°
Tsawon Fitowa na Farko 47.5mm ± 1.5mm
Resistivity 0.015-0.0285 Ω · cm
Maƙarƙashiya Maɗaukaki <0.5
Boron Pitting Density (BPD) <2000
Matsakaicin Dinsity Screw Screw Dislocation Density (TSD) <500
Yankunan Polytype Babu
Edge Indents <3, 1mm nisa da zurfin
Tsagewar Gefen 3, <1mm/e
Shiryawa Wafer case

 

Kammalawa

SiC Ingot 6-inch - N-type Dummy/Prime grade shine kayan ƙima wanda ya dace da ƙaƙƙarfan buƙatun masana'antar semiconductor. Matsayinsa mai girma na thermal conductivity, keɓaɓɓen juriya, da ƙarancin ƙarancin lahani sun sa ya zama kyakkyawan zaɓi don samar da na'urorin lantarki na ci gaba, kayan haɗin mota, tsarin sadarwa, da tsarin makamashi mai sabuntawa. Ƙaƙƙarfan kauri da ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun bayanai ke tabbatar da cewa ana iya daidaita wannan ingot na SiC zuwa aikace-aikacen da yawa, yana tabbatar da babban aiki da aminci a cikin wuraren da ake buƙata. Don ƙarin bayani ko yin oda, da fatan za a tuntuɓi ƙungiyar tallace-tallace mu.

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