Silicon carbide juriya dogon kristal makera girma 6/8/12 inch SiC ingot crystal PVT Hanyar

Silicon carbide juriya doguwar tanderu crystal girma 6/8/12 inch SiC ingot crystal PVT Hanyar Featured Image

Takaitaccen Bayani:

Silicon carbide juriya girma makera (PVT Hanyar, jiki tururi Hanyar canja wurin) ne key kayan aiki don girma na silicon carbide (SiC) guda crystal ta high zafin jiki sublimation-recrystallization manufa. The fasaha yana amfani da juriya dumama (graphite dumama jiki) to sublimate da SiC albarkatun kasa a wani babban zafin jiki na 2000 ~ 2500 ℃, da kuma recrystallize a cikin ƙananan zafin jiki yankin (iri crystal) samar da wani high quality-SiC guda crystal (4H / 6H-SiC). Hanyar PVT ita ce babban tsari don samar da yawan adadin SiC na inci 6 da ƙasa, wanda aka yi amfani da shi sosai a cikin shirye-shiryen shirye-shiryen na'ura na wutar lantarki (irin su MOSFETs, SBD) da na'urorin mitar rediyo (GaN-on-SiC).

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Ƙa'idar aiki:

1. Raw kayan loading: high tsarki SiC foda (ko block) sanya a kasa na graphite crucible (high zafin jiki yankin).

2. Vacuum/iner yanayi: vacuum dakin tanderun (<10⁻³ mbar) ko wuce inert gas (Ar).

3. High zafin jiki sublimation: juriya dumama zuwa 2000 ~ 2500 ℃, SiC bazuwar cikin Si, Si₂C, SiC₂ da sauran gas lokaci aka gyara.

4. Gas zamani watsa: da zafin jiki gradient tafiyar da yaduwar gas lokaci abu zuwa low zafin jiki yankin (iri karshen iri).

5. Girman Crystal: Tsarin gas yana sake sake sakewa a saman Seed Crystal kuma yana girma a cikin jagorar jagora tare da C-axis ko A-axis.

Mahimmin sigogi:

1. Zazzabi gradient: 20 ~ 50 ℃ / cm (sarrafa girman girma da ƙarancin lahani).

2. Matsa lamba: 1 ~ 100mbar (ƙananan matsa lamba don rage ƙazanta haɗawa).

3.Growth rate: 0.1 ~ 1mm / h (ya shafi ingancin crystal da samar da inganci).

Babban fasali:

(1) Crystal ingancin
Ƙarƙashin ƙarancin lahani: ƙananan ƙarancin microtubule <1 cm⁻², ƙarancin lalacewa 10³ ~ 10⁴ cm⁻² (ta hanyar inganta iri da sarrafa tsari).

Nau'in sarrafa nau'in polycrystalline: na iya girma 4H-SiC (na al'ada), 6H-SiC, 4H-SiC rabo> 90% (buƙatar sarrafa daidaitaccen yanayin zafin jiki da yanayin iskar gas na stoichiometric).

(2) Ayyukan kayan aiki
Babban kwanciyar hankali na zafin jiki: graphite dumama zafin jiki> 2500 ℃, jikin tanderun yana ɗaukar ƙirar rufi mai yawa (kamar graphite ji + jaket mai sanyaya ruwa).

Ikon Uniformity: Canjin zafin jiki na axial / radial na ± 5 ° C yana tabbatar da daidaiton diamita crystal (6-inch substrate kauri sabani <5%).

Digiri na aiki da kai: Haɗe-haɗen tsarin sarrafa PLC, saka idanu na ainihin lokacin zafin jiki, matsa lamba da ƙimar girma.

(3) Fa'idodin fasaha
Babban amfani da kayan aiki: ƙimar canjin albarkatun ƙasa> 70% (mafi kyau fiye da hanyar CVD).

Matsakaicin girman girman girman: 6-inch taro an cimma, 8-inch yana cikin matakin ci gaba.

(4) Amfanin makamashi da farashi
Amfanin makamashi na tanda guda ɗaya shine 300 ~ 800kW · h, yana lissafin 40% ~ 60% na farashin samar da kayan aikin SiC.

Zuba jarin kayan aiki yana da girma (1.5M 3M a kowace naúrar), amma farashin naúrar ya fi ƙasa da hanyar CVD.

Babban aikace-aikace:

1. Kayan lantarki na wutar lantarki: SiC MOSFET substrate for lantarki abin hawa inverter da photovoltaic inverter.

2. Rf na'urorin: 5G tushe tashar GaN-on-SiC epitaxial substrate (yafi 4H-SiC).

3. Matsanancin na'urorin muhalli: babban zafin jiki da na'urori masu auna matsa lamba don sararin samaniya da kayan aikin makamashin nukiliya.

Sigar fasaha:

Ƙayyadaddun bayanai	Cikakkun bayanai
Girma (L × W × H)	2500 × 2400 × 3456 mm ko keɓancewa
Crucible Diamita	900 mm
Matsananciyar Matsi	6 × 10⁻ Pa (bayan 1.5h na injin)
Yawan Leaka	≤5 Pa/12h (bake-out)
Juyawa Shaft Diamita	50 mm
Gudun Juyawa	0.5-5 rpm
Hanyar dumama	Juriya dumama
Matsakaicin zafin wuta	2500°C
Ƙarfin zafi	40 kW × 2 × 20 kW
Ma'aunin Zazzabi	pyrometer infrared mai launi biyu
Yanayin Zazzabi	900-3000 ° C
Daidaiton Zazzabi	±1°C
Rage Matsi	1-700 mbar
Daidaiton Kula da Matsi	1-10 mbar: ± 0.5% FS; 10-100 mbar: ± 0.5% FS; 100-700 mbar: ± 0.5% FS
Nau'in Aiki	Load ɗin ƙasa, zaɓuɓɓukan aminci na hannu/atomatik
Siffofin Zaɓuɓɓuka	Ma'aunin zafin jiki biyu, wuraren dumama da yawa

Ayyukan XKH:

XKH yana ba da sabis na tsarin gabaɗaya na tanderun SiC PVT, gami da gyare-gyaren kayan aiki (ƙirar filin thermal, sarrafawa ta atomatik), haɓaka tsari (tsarin sigar crystal, haɓaka lahani), horo na fasaha (aiki da kiyayewa) da goyon bayan tallace-tallace (madaidaicin sassa na graphite, daidaita yanayin filin thermal) don taimakawa abokan ciniki cimma babban ingancin sic crystal taro samarwa. Hakanan muna ba da sabis na haɓaka tsari don ci gaba da haɓaka yawan amfanin ƙasa da ƙimar girma, tare da daidaitaccen lokacin jagora na watanni 3-6.