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SICOI (Silicon Carbide akan Insulator) Wafers SiC Film ON Silicon

Sicoi (Silicon Carbide akan Insulator) Wafers SiC Film ON Silicon Hotunan da aka Fito
  • SICOI (Silicon Carbide akan Insulator) Wafers SiC Film ON Silicon
  • SICOI (Silicon Carbide akan Insulator) Wafers SiC Film ON Silicon
  • SICOI (Silicon Carbide akan Insulator) Wafers SiC Film ON Silicon

Takaitaccen Bayani:

Wafers ɗin Silicon Carbide on Insulator (SICOI) su ne sinadaran semiconductor na zamani waɗanda ke haɗa manyan halayen zahiri da na lantarki na silicon carbide (SiC) tare da halayen keɓewa na lantarki na Layer buffer mai hana ruwa shiga, kamar silicon dioxide (SiO₂) ko silicon nitride (Si₃N₄). Wafer ɗin SICOI na yau da kullun ya ƙunshi siririn Layer SiC na epitaxial, fim ɗin hana ruwa shiga tsakani, da kuma substrate mai tallafi, wanda zai iya zama ko dai silicon ko SiC.


Siffofi

Cikakken Zane

SICOI 11_副本
SICOI 14_副本2

Gabatar da Silicon Carbide akan wafers na Insulator (SICOI)

Wafers ɗin Silicon Carbide on Insulator (SICOI) su ne sinadaran semiconductor na zamani waɗanda ke haɗa manyan halayen zahiri da na lantarki na silicon carbide (SiC) tare da halayen keɓewa na lantarki na Layer buffer mai hana ruwa shiga, kamar silicon dioxide (SiO₂) ko silicon nitride (Si₃N₄). Wafer ɗin SICOI na yau da kullun ya ƙunshi siririn Layer SiC na epitaxial, fim ɗin hana ruwa shiga tsakani, da kuma substrate mai tallafi, wanda zai iya zama ko dai silicon ko SiC.

An ƙera wannan tsarin haɗin gwiwa don biyan buƙatun na'urorin lantarki masu ƙarfi, masu yawan mita, da kuma masu yawan zafin jiki. Ta hanyar haɗa wani Layer mai rufi, wafers na SICOI suna rage ƙarfin parasitic da kuma rage kwararar ruwa, ta haka ne ke tabbatar da yawan aiki, ingantaccen aiki, da kuma ingantaccen sarrafa zafi. Waɗannan fa'idodin suna sa su zama masu matuƙar muhimmanci a fannoni kamar motocin lantarki, kayayyakin more rayuwa na sadarwa na 5G, tsarin sararin samaniya, fasahar lantarki ta RF mai ci gaba, da fasahar firikwensin MEMS.

Ka'idar Samarwa ta Wafers na SICOI

Ana ƙera wafers na SICOI (Silicon Carbide on Insulator) ta hanyar wani tsari na zamani.tsarin haɗa wafer da rage kiba:

  1. Girman SiC Substrate– Ana shirya wafer SiC mai inganci guda ɗaya (4H/6H) a matsayin kayan bayarwa.

  2. Tsarin Layer Mai Rufewa– Ana samar da wani fim mai rufewa (SiO₂ ko Si₃N₄) a kan wafer mai ɗaukar kaya (Si ko SiC).

  3. Haɗin Wafer– Wafer ɗin SiC da wafer ɗin da ke ɗauke da shi suna haɗuwa a ƙarƙashin babban zafin jiki ko taimakon plasma.

  4. Rage nauyi da gogewa– Ana rage girman wafer ɗin mai ba da gudummawa na SiC zuwa ƙananan micrometers sannan a goge shi don ya sami santsi a saman.

  5. Binciken Ƙarshe– An gwada wafer ɗin SICOI da aka kammala don ganin daidaiton kauri, ƙaiƙayin saman, da kuma aikin rufin.

Ta hanyar wannan tsari,siririn SiC mai aikitare da kyawawan halayen lantarki da na zafi, an haɗa shi da fim ɗin rufi da wani abu mai tallafi, yana ƙirƙirar dandamali mai ƙarfi don na'urorin wutar lantarki na zamani da na'urorin RF.

SiCOI

Manyan Fa'idodin Wafers na SICOI

Nau'in Siffa Halayen Fasaha Babban Fa'idodi
Tsarin Kayan Aiki Layer mai aiki na 4H/6H-SiC + fim mai rufi (SiO₂/Si₃N₄) + Si ko SiC mai ɗaukar kaya Yana cimma ƙarfin keɓewa ta lantarki, yana rage tsangwama ga ƙwayoyin cuta
Ƙarfin Wutar Lantarki Ƙarfin karyewa mai yawa (>3 MV/cm), ƙarancin asarar dielectric An inganta shi don babban ƙarfin lantarki da aiki mai yawa
Halayen Zafi Matsakaicin zafin jiki har zuwa 4.9 W/cm·K, tsayayye sama da 500°C Tasirin watsa zafi, kyakkyawan aiki a ƙarƙashin nauyin zafi mai tsanani
Kayayyakin Inji Taurin kai mai tsanani (Mohs 9.5), ƙarancin ma'aunin faɗaɗa zafi Ƙarfi daga damuwa, yana ƙara tsawon rai na na'urar
Ingancin Fuskar Sama mai santsi sosai (Ra <0.2 nm) Yana haɓaka ƙirƙirar na'urori marasa lahani kuma abin dogaro
Rufewa Juriyar juriya >10¹⁴ Ω·cm, ƙarancin kwararar wutar lantarki Aiki mai aminci a cikin aikace-aikacen keɓewa na RF da manyan ƙarfin lantarki
Girman & Keɓancewa Akwai shi a cikin tsarin inci 4, 6, da 8; Kauri na SiC 1-100 μm; rufin rufi 0.1-10 μm Tsarin sassauƙa don buƙatun aikace-aikace daban-daban

 

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Yankunan Aikace-aikacen Muhimmi

Sashen Aikace-aikace Lambobin Amfani na yau da kullun Fa'idodin Aiki
Lantarki Mai Lantarki Injin lantarki na EV, tashoshin caji, na'urorin wutar lantarki na masana'antu Babban ƙarfin lantarki mai lalacewa, raguwar asarar sauyawa
RF & 5G Amplifiers na wutar lantarki na tashar tushe, abubuwan da ke cikin raƙuman milimita Ƙananan ƙwayoyin cuta, suna tallafawa ayyukan kewayon GHz
Na'urori Masu auna MEMS Na'urori masu auna matsin lamba na muhalli masu tsauri, MEMS na matakin kewayawa Babban kwanciyar hankali na zafi, juriya ga radiation
Tashar Jiragen Sama da Tsaro Sadarwar tauraron dan adam, kayan aikin wutar lantarki na avionics Aminci a cikin yanayin zafi mai tsanani da kuma fallasawar radiation
Grid Mai Wayo Masu canza HVDC, masu katsewar da'ira mai ƙarfi Babban rufin yana rage asarar wutar lantarki
Optoelectronics UV LEDs, Laser substrates Ingancin kristal mai kyau yana tallafawa ingantaccen fitar da haske

Ƙirƙirar 4H-SiCOI

Ana samun nasarar samar da wafers 4H-SiCOI ta hanyarhanyoyin haɗa wafer da rage sirara, yana ba da damar haɗa hanyoyin kariya masu inganci da kuma layukan aiki na SiC marasa lahani.

  • a: Tsarin ƙera kayan dandamalin 4H-SiCOI.

  • bHoton wafer mai inci 4 mai siffar 4H-SiCOI ta amfani da haɗin kai da rage sirara; an yiwa alama a wuraren lahani.

  • c: Daidaiton kauri na substrate 4H-SiCOI.

  • d: Hoton gani na 4H-SiCOI.

  • eTsarin aiki don ƙera siginar microdisk na SiC.

  • f: SEM na na'urar sake kunna microdisk da aka kammala.

  • g: An ƙara girman SEM wanda ke nuna bangon gefe na resonator; saitin AFM yana nuna santsi na saman nanoscale.

  • h: SEM mai sassaka-sassa wanda ke nuna saman sama mai siffar parabolic.

Tambayoyin da ake yawan yi kan Wafers na SICOI

T1: Waɗanne fa'idodi ne wafers na SICOI ke da su fiye da wafers na SiC na gargajiya?
A1: Ba kamar daidaitattun abubuwan SiC ba, wafers na SICOI sun haɗa da wani Layer mai hana ruwa shiga wanda ke rage ƙarfin parasitic da kwararar ruwa, wanda ke haifar da ingantaccen aiki, mafi kyawun amsawar mita, da kuma ingantaccen aikin zafi.

Q2: Waɗanne girman wafer ne ake samu yawanci?
A2: Ana samar da wafers na SICOI a cikin tsarin inci 4, inci 6, da inci 8, tare da SiC na musamman da kauri mai rufi wanda ke samuwa dangane da buƙatun na'urar.

T3: Wadanne masana'antu ne suka fi amfana daga wafers na SICOI?
A3: Manyan masana'antu sun haɗa da na'urorin lantarki masu amfani da wutar lantarki don motocin lantarki, na'urorin lantarki na RF don hanyoyin sadarwa na 5G, MEMS don na'urori masu auna sararin samaniya, da kuma na'urorin lantarki kamar UV LEDs.

Q4: Ta yaya Layer ɗin rufewa ke inganta aikin na'urar?
A4: Fim ɗin rufewa (SiO₂ ko Si₃N₄) yana hana zubar da ruwa daga iska kuma yana rage magana ta lantarki, yana ba da damar juriyar ƙarfin lantarki mafi girma, sauyawa mai inganci, da rage asarar zafi.

Q5: Shin wafers ɗin SICOI sun dace da amfani da su a yanayin zafi mai yawa?
A5: Eh, tare da yawan amfani da zafi da juriya fiye da 500°C, an tsara wafers na SICOI don yin aiki yadda ya kamata a ƙarƙashin zafi mai tsanani da kuma a cikin mawuyacin yanayi.

Q6: Za a iya keɓance wafers na SICOI?
A6: Hakika. Masana'antun suna ba da ƙira na musamman don takamaiman kauri, matakan doping, da haɗin substrate don biyan buƙatun bincike daban-daban da masana'antu.

  • Na baya:
  • Na gaba:

    • Kayayyaki Masu Alaƙa

    Rubuta saƙonka a nan ka aika mana da shi
    Danna Shigar don bincike ko ESC don rufewa