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SICOI (Silicon Carbide akan Insulator) Wafers SiC Film ON Silicon

SICOI (Silicon Carbide akan Insulator) Wafers SiC Film ON Silicon Featuring Hoton
  • SICOI (Silicon Carbide akan Insulator) Wafers SiC Film ON Silicon
  • SICOI (Silicon Carbide akan Insulator) Wafers SiC Film ON Silicon
  • SICOI (Silicon Carbide akan Insulator) Wafers SiC Film ON Silicon

Takaitaccen Bayani:

Silicon Carbide akan Insulator (SICOI) wafers sune na gaba-gaba na semiconductor substrates waɗanda ke haɗa mafi girman kaddarorin jiki da na lantarki na silicon carbide (SiC) tare da fitattun halayen keɓancewar lantarki na Layer buffer, kamar silicon dioxide (SiO₂) ko silicon nitride (Si₃N₄). Wani wafer SICOI na yau da kullun ya ƙunshi ƙaramin SiC na epitaxial na bakin ciki, fim ɗin insulating na tsaka-tsaki, da madaidaicin tushe mai goyan baya, wanda zai iya zama ko dai silicon ko SiC.


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SICOI 11_副本
SICOI 14_副本2

Gabatar da Silicon Carbide akan Wafers (SICOI).

Silicon Carbide akan Insulator (SICOI) wafers sune na gaba-gaba na semiconductor substrates waɗanda ke haɗa mafi girman kaddarorin jiki da na lantarki na silicon carbide (SiC) tare da fitattun halayen keɓancewar lantarki na Layer buffer, kamar silicon dioxide (SiO₂) ko silicon nitride (Si₃N₄). Wani wafer SICOI na yau da kullun ya ƙunshi ƙaramin SiC na epitaxial na bakin ciki, fim ɗin insulating na tsaka-tsaki, da madaidaicin tushe mai goyan baya, wanda zai iya zama ko dai silicon ko SiC.

An ƙirƙira wannan tsarin haɗin gwiwar don biyan buƙatu masu ƙarfi na na'urorin lantarki masu ƙarfi, mai ƙarfi da zafin jiki. Ta hanyar haɗa Layer mai rufewa, wafers na SICOI suna rage ƙarfin parasitic da kuma kashe kwararar ruwa, ta haka ne ke tabbatar da mafi girman mitocin aiki, ingantacciyar inganci, da ingantaccen sarrafa zafi. Waɗannan fa'idodin sun sa su zama masu daraja sosai a sassa kamar motocin lantarki, kayan aikin sadarwar 5G, tsarin sararin samaniya, na'urorin lantarki na RF na ci gaba, da fasahar firikwensin MEMS.

Ƙa'idar Samar da Wafers na SICOI

SICOI (Silicon Carbide akan Insulator) wafers ana kera su ta hanyar ci gabawafer bonding da thinning tsari:

  1. Ci gaban Substrate SiC- An shirya babban ingancin SiC wafer (4H / 6H) a matsayin kayan mai ba da gudummawa.

  2. Zubar da Lantarki– An samar da fim mai rufe fuska (SiO₂ ko Si₃N₄) akan wafer mai ɗaukar hoto (Si ko SiC).

  3. Wafer Bonding- Wafern SiC da wafer mai ɗaukar kaya an haɗa su tare ƙarƙashin babban zafin jiki ko taimakon plasma.

  4. Bakin ciki & goge baki- Wafer ɗin mai ba da gudummawar SiC yana raguwa zuwa ƴan mitoci kaɗan kuma an goge shi don cimma yanayin santsi.

  5. Binciken Karshe- An gwada wafern SICOI da aka kammala don daidaituwar kauri, rashin ƙarfi, da aikin rufewa.

Ta wannan tsari, abakin ciki SiC Layer mai aikitare da kyawawan kayan lantarki da kayan zafi an haɗa su tare da fim mai ɓoyewa da maɓallin tallafi, ƙirƙirar dandamali mai mahimmanci don ƙarfin zamani na gaba da na'urorin RF.

SiCOI

Muhimman Fa'idodi na SICOI Wafers

Nau'in fasali Halayen Fasaha Babban Amfani
Tsarin Material 4H/6H-SiC mai aiki Layer + fim mai rufewa (SiO₂/Si₃N₄) + Si ko SiC mai ɗaukar hoto Yana samun keɓancewar lantarki mai ƙarfi, yana rage tsangwama
Abubuwan Lantarki Ƙarfin lalacewa mai ƙarfi (> 3 MV / cm), ƙarancin ƙarancin dielectric An inganta shi don babban ƙarfin lantarki da aiki mai girma
Thermal Properties Ƙarfafawar thermal har zuwa 4.9 W/cm·K, barga sama da 500°C Ƙunƙarar zafi mai tasiri, kyakkyawan aiki a ƙarƙashin nauyin zafi mai zafi
Kayayyakin Injini Matsanancin taurin (Mohs 9.5), ƙarancin haɓakar haɓakar thermal Mai ƙarfi da damuwa, yana haɓaka tsawon na'urar
ingancin saman Filaye mai laushi (Ra <0.2 nm) Yana haɓaka epitaxy mara lahani da ƙirƙira na'urar abin dogaro
Insulation Resistivity> 10¹⁴ Ω·cm, ƙaramar yabo a halin yanzu Amintaccen aiki a cikin RF da aikace-aikacen keɓe masu ƙarfin lantarki
Girman & Daidaitawa Akwai a cikin 4, 6, da 8-inch Formats; SiC kauri 1-100 μm; rufi 0.1-10 μm Zane mai sassauƙa don buƙatun aikace-aikacen daban-daban

 

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Yankunan Aikace-aikacen Core

Bangaren aikace-aikace Abubuwan Amfani Na Musamman Amfanin Ayyuka
Kayan Wutar Lantarki EV inverters, caji tashoshi, masana'antu ikon na'urorin Babban rushewar wutar lantarki, rage asarar canzawa
RF & 5G Tushen wutar lantarki amplifiers, millimeter-kalaman abubuwan Ƙananan parasitics, yana goyan bayan ayyukan GHz
Sensors na MEMS Na'urori masu auna matsa lamba na mahalli, MEMS mai darajar kewayawa High thermal kwanciyar hankali, resistant zuwa radiation
Aerospace & Tsaro Sadarwar tauraron dan adam, na'urorin wutar lantarki na avionics Dogaro a cikin matsanancin yanayin zafi da fallasa radiation
Smart Grid HVDC masu juyawa, masu jujjuyawar ƙasa mai ƙarfi Babban rufi yana rage asarar wutar lantarki
Optoelectronics UV LEDs, Laser substrates Babban ingancin crystalline yana goyan bayan ingantaccen fitarwar haske

Abubuwan da aka bayar na 4H-SiCOI

Ana samun samar da wafers na 4H-SiCOI ta hanyarwafer bonding da thinning matakai, yana ba da damar musaya mai inganci masu inganci da yadudduka masu aiki na SiC mara lahani.

  • a: Tsarin tsari na 4H-SiCOI kayan aikin dandamali.

  • b: Hoton 4-inch 4H-SiCOI wafer ta amfani da haɗin gwiwa da thinning; wuraren lahani masu alama.

  • c: Ƙaunar daidaituwar kauri na 4H-SiCOI substrate.

  • dHoton gani na 4H-SiCOI mutu.

  • e: Tsari kwarara don ƙirƙira siC microdisk resonator.

  • f: SEM na ingantaccen microdisk resonator.

  • g: Ƙara girman SEM yana nuna bangon bangon resonator; Saitin AFM yana nuna santsi na nanoscale.

  • h: Sashe na SEM na giciye yana kwatanta saman sama mai siffar parabolic.

FAQ akan SICOI Wafers

Q1: Wadanne fa'idodi ne wafers na SICOI ke da shi akan wafern SiC na gargajiya?
A1: Ba kamar daidaitattun sinadarai na SiC ba, wafers na SICOI sun haɗa da rufin rufi wanda ke rage ƙarfin parasitic da ɗigon ruwa, yana haifar da inganci mafi girma, mafi kyawun amsa mitar, da ingantaccen aikin thermal.

Q2: Wadanne nau'ikan wafer ne yawanci samuwa?
A2: Ana samar da wafers na SICOI a cikin tsarin 4-inch, 6-inch, da 8-inch, tare da keɓantaccen SiC da kauri mai insulating yana samuwa dangane da buƙatun na'urar.

Q3: Wadanne masana'antu ne suka fi amfana da wafers na SICOI?
A3: Maɓallin masana'antu sun haɗa da lantarki na lantarki don motocin lantarki, RF lantarki don cibiyoyin sadarwar 5G, MEMS don na'urori masu auna sararin samaniya, da optoelectronics kamar UV LEDs.

Q4: Ta yaya Layer Layer inganta aikin na'urar?
A4: Fim ɗin insulating (SiO₂ ko Si₃N₄) yana hana zubar da ruwa na yanzu kuma yana rage maganganun giciye na lantarki, yana ba da damar ƙarfin ƙarfin lantarki mafi girma, sauyawa mai inganci, da rage asarar zafi.

Q5: Shin wafers na SICOI sun dace da aikace-aikacen zafi mai zafi?
A5: Ee, tare da haɓakar haɓakar thermal mai girma da juriya fiye da 500 ° C, an tsara wafers na SICOI don yin aiki da dogaro a ƙarƙashin matsanancin zafi kuma a cikin matsanancin yanayi.

Q6: Za a iya daidaita wafers na SICOI?
A6: Lallai. Masu masana'anta suna ba da ƙira da aka keɓance don takamaiman kauri, matakan doping, da haɗin ƙasa don saduwa da bincike iri-iri da buƙatun masana'antu.

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