SiC
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SiC Ingot 4H nau'in Dia 4inch 6inch Kauri 5-10mm Bincike / Dummy Grade
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Sic Substrate Silicon Carbide Wafer 4H-N Nau'in Babban Taurin Lalacewa Juriya na Firayim Matsayi
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2inch Silicon Carbide Wafer 6H-N Nau'in Babban Matsayin Bincike Grade Dummy Grade 330μm 430μm Kauri
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2inch silicon carbide substrate 6H-N diamita mai gefe biyu mai gogewa 50.8mm matakin bincike na samarwa
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N-Nau'in SiC Composite Substrates Dia6inch Babban ingancin monocrystaline da ƙarancin inganci.
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Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
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N-Type SiC akan Si Composite Substrates Dia6inch
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SiC substrate Dia200mm 4H-N da HPSI Silicon carbide
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3inch SiC Substrate Production Dia76.2mm 4H-N
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SiC substrate P da D darajar Dia50mm 4H-N 2inch
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SiC Ingot 4H-N nau'in Dummy 2inch 3inch 4inch 6inch kauri:＞10mm
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200mm SiC substrate dummy sa 4H-N 8inch SiC wafer