SiC substrate P da D aji Dia50mm 4H-N 2inch
Babban fasali na 2inch SiC mosfet wafers sune kamar haka;.
High thermal Conductivity: Yana tabbatar da ingantaccen kula da thermal, haɓaka amincin na'urar da aiki
Babban Motsi na Electron: Yana ba da damar sauya wutar lantarki mai sauri, dacewa da aikace-aikacen mitoci masu girma
Tsawon Sinadarai: Yana kiyaye aiki a ƙarƙashin matsanancin yanayi tsawon rayuwar na'urar
Daidaitawa: Mai jituwa tare da haɗin gwiwar semiconductor na yanzu da samar da taro
2inch, 3inch, 4inch, 6inch, 8inch SiC mosfet wafers ana amfani da ko'ina a cikin wadannan yankuna: ikon kayayyaki don lantarki motocin, samar da barga da ingantaccen makamashi tsarin, inverters abokan gaba sabunta makamashi tsarin, inganta makamashi management da kuma hira yadda ya dace,
SiC wafer da Epi-Layer wafer don tauraron dan adam da na'urorin lantarki na sararin samaniya, tabbatar da ingantaccen ingantaccen sadarwa mai ƙarfi.
Aikace-aikacen Optoelectronic don manyan ayyuka na lasers da LEDs, biyan buƙatun ci-gaba na haske da fasahar nuni.
Mu SiC wafers SiC substrates sune mafi kyawun zaɓi don kayan lantarki da na'urorin RF, musamman inda ake buƙatar babban aminci da aiki na musamman. Kowane rukuni na wafers ana fuskantar gwaji mai tsauri don tabbatar da sun cika ingantattun ma'auni.
Mu 2inch, 3inch, 4inch, 6inch, 8inch 4H-N type D-grade da P-grade SiC wafers sune mafi kyawun zaɓi don aikace-aikacen semiconductor masu girma. Tare da ingantaccen ingancin kristal, tsananin kulawar inganci, sabis na keɓancewa, da aikace-aikace iri-iri, muna kuma iya shirya keɓancewa gwargwadon bukatunku. Tambayoyi suna maraba!