SiC substrate P da D Dia50mm 4H-N 2inci

SiC substrate P da D digiri Dia50mm 4H-N 2inch Hoton da aka Fito

Takaitaccen Bayani:

Silicon carbide (SiC) wani abu ne mai kama da silinda wanda aka haɗa shi da rukunin IV-IV, kuma abu ne mai kama da semiconductor.wanda ya ƙunshi tsantsar silicon da tsantsar carbonAna iya haɗa sinadarin nitrogen ko phosphorus cikin SIC don samar da semiconductors na nau'in n, ko kuma beryllium, aluminum, ko kuma gallium za a iya haɗa shi don ƙirƙirar semiconductors na nau'in p. Yana da ƙarfin watsa zafi mai yawa, ƙarfin lantarki mai ƙarfi, ƙarfin lantarki mai ƙarfi, kwanciyar hankali na sinadarai, da kuma dacewa, yana tabbatar da ingantaccen sarrafa zafi, yana haɓaka aminci da aiki na na'ura, yana ba da damar sauya lantarki mai sauri mai dacewa da aikace-aikacen mita mai yawa, da kuma kiyaye aiki a ƙarƙashin yanayi mai tsauri don tsawaita tsawon rayuwar na'urar.

Aika mana imel

Siffofi

Manyan fasalulluka na wafers ɗin SiC mosfet na inci 2 sune kamar haka;

Babban Gudanar da Zafin Jiki: Yana tabbatar da ingantaccen tsarin kula da zafi, yana haɓaka amincin na'ura da aiki

Babban Motsi na Electron: Yana ba da damar sauya wutar lantarki mai sauri, wanda ya dace da aikace-aikacen mita mai yawa

Kwanciyar hankali na sinadarai: Yana kiyaye aiki a ƙarƙashin yanayi mai tsauri tsawon rayuwar na'urar

Daidaituwa: Ya dace da haɗin semiconductor da ke akwai da kuma samar da taro

Ana amfani da wafers na SiC mai inci 2, inci 3, inci 4, inci 6, inci 8 a fannoni masu zuwa: na'urorin wutar lantarki don motocin lantarki, samar da tsarin makamashi mai karko da inganci, tsarin makamashi mai sabuntawa na inverters, inganta tsarin sarrafa makamashi da ingancin juyawa,

Wafer ɗin SiC da wafer ɗin Epi-layer don tauraron ɗan adam da na'urorin lantarki na sararin samaniya, wanda ke tabbatar da ingantaccen sadarwa mai yawan mita.

Aikace-aikacen Optoelectronic don lasers da LEDs masu aiki mai kyau, biyan buƙatun fasahar haske da nuni na zamani.

SiC wafers ɗinmu na SiC su ne mafi kyawun zaɓi ga na'urorin lantarki masu amfani da wutar lantarki da na'urorin RF, musamman inda ake buƙatar babban aminci da aiki mai kyau. Kowace rukunin wafers ana yin gwaji mai tsauri don tabbatar da cewa sun cika mafi girman ƙa'idodi.

Wafers ɗinmu na inci 2, inci 3, inci 4, inci 6, inci 8, inci 4H-N nau'in D-grade da P-grade SiC sune zaɓi mafi kyau don aikace-aikacen semiconductor masu aiki mai girma. Tare da ingancin lu'ulu'u na musamman, sarrafa inganci mai tsauri, ayyukan keɓancewa, da kuma aikace-aikace iri-iri, muna iya shirya keɓancewa bisa ga buƙatunku. Ana maraba da tambayoyi!

Cikakken Zane

Na baya: Gilashin TGV mai girman inci 12 na gilashin bugun gilashi

Na gaba: Samfurin substrate na SiC inci 3 Dia76.2mm 4H-N

Kayayyaki Masu Alaƙa

SiC substrate P da D Dia50mm 4H-N 2inci

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