Wafer ɗin HPSI SiC mai siffar 4H-N 6H-P 3C-N SiC mai siffar 4H-N don MOS ko SBD
Takaitaccen Bayani na SiC Substrate SiC Epi-wafer
Muna bayar da cikakken fayil na manyan abubuwan SiC da wafers masu inganci a cikin nau'ikan polytypes da bayanin doping da yawa—gami da 4H-N (n-type conductive), 4H-P (p-type conductive), 4H-HPSI (high-purity semi-insulating semi), da 6H-P (p-type conductive)—a diamita daga 4″, 6″, da 8″ har zuwa 12″. Bayan ƙananan substrates, ayyukanmu na haɓaka epi wafer masu ƙima suna isar da wafers na epitaxial (epi) tare da kauri mai ƙarfi (1-20 µm), yawan doping, da yawan lahani.
Kowace sic wafer da epi wafer ana yin bincike mai zurfi a cikin layi (yawan bututu <0.1 cm⁻², ƙaiƙayin saman Ra <0.2 nm) da cikakken fasalin lantarki (CV, taswirar juriya) don tabbatar da daidaito da aiki na musamman na lu'ulu'u. Ko ana amfani da shi don na'urorin lantarki masu ƙarfi, amplifiers na RF masu yawan mita, ko na'urorin optoelectronic (LEDs, masu gano hoto), layin samfurin SiC da epi wafer ɗinmu suna ba da aminci, kwanciyar hankali na zafi, da ƙarfin rushewa da ake buƙata ta aikace-aikacen yau da kullun.
Halaye da aikace-aikacen nau'in SiC Substrate 4H-N
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Tsarin SiC mai siffar 4H-N (Hexagonal)
Faɗin faɗin ~3.26 eV yana tabbatar da ingantaccen aikin lantarki da kuma ƙarfin zafi a ƙarƙashin yanayin zafi mai yawa da kuma yanayin wutar lantarki mai yawa.
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SiC substrateNau'in N-Type Doping
Daidaitaccen sarrafa sinadarin nitrogen yana samar da yawan sinadarin da ke ɗauke da sinadarin daga 1×10¹⁶ zuwa 1×10¹⁹ cm⁻³ da kuma motsin electron a zafin ɗaki har zuwa ~900 cm²/V·s, wanda hakan ke rage asarar da ke tattare da shi.
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SiC substrateFaɗin Juriya da Daidaito
Akwai kewayon juriya tsakanin 0.01–10 Ω·cm da kauri tsakanin wafer na 350–650 µm tare da juriyar ±5% a duka doping da kauri—wanda ya dace da ƙera na'urori masu ƙarfi.
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SiC substrateYawan Lalacewa Mai Rauni Mai Ƙanƙanta
Yawan bututun micro < 0.1 cm⁻² da yawan nakasassu na basal-plane < 500 cm⁻², wanda ke samar da sama da kashi 99% na yawan na'urori da kuma ingancin lu'ulu'u mai kyau.
- SiC substrateƘarfin wutar lantarki na musamman
Rarraba zafin jiki har zuwa ~370 W/m·K yana sauƙaƙa cire zafi yadda ya kamata, yana ƙara aminci ga na'urori da yawan ƙarfi.
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SiC substrateManufa Aikace-aikace
SiC MOSFETs, Schottky diodes, na'urorin wutar lantarki da na'urorin RF don tuƙi na abin hawa na lantarki, inverters na hasken rana, tuƙi na masana'antu, tsarin jan hankali, da sauran kasuwannin wutar lantarki masu wahala.
Bayanin SiC wafer mai inci 6 mai girman inci 4H-N | ||
| Kadara | Sifili Matsayin Samarwa na MPD (Matsayin Z) | Daraja ta D (D) |
| Matsayi | Sifili Matsayin Samarwa na MPD (Matsayin Z) | Daraja ta D (D) |
| diamita | 149.5 mm - 150.0 mm | 149.5 mm - 150.0 mm |
| Nau'in Poly-type | 4H | 4H |
| Kauri | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Tsarin Wafer | A gefen axis: 4.0° zuwa <1120> ± 0.5° | A gefen axis: 4.0° zuwa <1120> ± 0.5° |
| Yawan bututun micropipe | ≤ 0.2 cm² | ≤ 15 cm² |
| Juriya | 0.015 - 0.024 Ω·cm | 0.015 - 0.028 Ω·cm |
| Babban Tsarin Faɗi | [10-10] ± 50° | [10-10] ± 50° |
| Babban Tsawon Lebur | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Keɓewa a Gefen | 3 mm | 3 mm |
| LTV/TIV / Bow / Warp | 2.5µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Taurin kai | Ra na Poland ≤ 1 nm | Ra na Poland ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Fashewar Gefen Ta Hanyar Haske Mai Tsanani | Tsawon da aka tara ≤ 20 mm tsayi ɗaya ≤ 2 mm | Tsawon da aka tara ≤ 20 mm tsayi ɗaya ≤ 2 mm |
| Faranti na Hex ta Haske Mai Tsanani | Yankin da aka tara ≤ 0.05% | Yankin da aka tara ≤ 0.1% |
| Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi | Yankin da aka tara ≤ 0.05% | Yankin da aka tara ≤ 3% |
| Abubuwan da ke tattare da Carbon na gani | Yankin da aka tara ≤ 0.05% | Yankin da aka tara ≤ 5% |
| Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani | Tsawon jimilla ≤ diamita na wafer 1 | |
| Ƙwayoyin Gefen Ta Haske Mai Tsanani | Babu wanda aka yarda da shi ≥ 0.2 mm faɗi da zurfi | An yarda da 7, ≤ 1 mm kowanne |
| Rushewar Sukurin Zaren | < 500 cm³ | < 500 cm³ |
| Gurɓatar Fuskar Silicon Ta Hanyar Haske Mai Tsanani | ||
| Marufi | Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya | Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya |
Bayanin SiC wafer mai inci 8 mai girman inci 4H-N | ||
| Kadara | Sifili Matsayin Samarwa na MPD (Matsayin Z) | Daraja ta D (D) |
| Matsayi | Sifili Matsayin Samarwa na MPD (Matsayin Z) | Daraja ta D (D) |
| diamita | 199.5 mm - 200.0 mm | 199.5 mm - 200.0 mm |
| Nau'in Poly-type | 4H | 4H |
| Kauri | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Tsarin Wafer | 4.0° zuwa <110> ± 0.5° | 4.0° zuwa <110> ± 0.5° |
| Yawan bututun micropipe | ≤ 0.2 cm² | ≤ 5 cm² |
| Juriya | 0.015 - 0.025 Ω·cm | 0.015 - 0.028 Ω·cm |
| Jagorancin Mai Daraja | ||
| Keɓewa a Gefen | 3 mm | 3 mm |
| LTV/TIV / Bow / Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Taurin kai | Ra na Poland ≤ 1 nm | Ra na Poland ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Fashewar Gefen Ta Hanyar Haske Mai Tsanani | Tsawon da aka tara ≤ 20 mm tsayi ɗaya ≤ 2 mm | Tsawon da aka tara ≤ 20 mm tsayi ɗaya ≤ 2 mm |
| Faranti na Hex ta Haske Mai Tsanani | Yankin da aka tara ≤ 0.05% | Yankin da aka tara ≤ 0.1% |
| Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi | Yankin da aka tara ≤ 0.05% | Yankin da aka tara ≤ 3% |
| Abubuwan da ke tattare da Carbon na gani | Yankin da aka tara ≤ 0.05% | Yankin da aka tara ≤ 5% |
| Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani | Tsawon jimilla ≤ diamita na wafer 1 | |
| Ƙwayoyin Gefen Ta Haske Mai Tsanani | Babu wanda aka yarda da shi ≥ 0.2 mm faɗi da zurfi | An yarda da 7, ≤ 1 mm kowanne |
| Rushewar Sukurin Zaren | < 500 cm³ | < 500 cm³ |
| Gurɓatar Fuskar Silicon Ta Hanyar Haske Mai Tsanani | ||
| Marufi | Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya | Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya |
4H-SiC wani abu ne mai matuƙar aiki da ake amfani da shi don na'urorin lantarki masu ƙarfi, na'urorin RF, da aikace-aikacen zafin jiki mai yawa. "4H" yana nufin tsarin lu'ulu'u, wanda yake da hexagonal, kuma "N" yana nuna nau'in doping da ake amfani da shi don inganta aikin kayan.
The4H-SiCAna amfani da nau'in don:
Lantarki Mai Lantarki:Ana amfani da shi a cikin na'urori kamar diodes, MOSFETs, da IGBTs don motocin lantarki, injunan masana'antu, da tsarin makamashi mai sabuntawa.
Fasaha ta 5G:Tare da buƙatar 5G don sassan da ke da yawan mitoci da inganci, ikon SiC na ɗaukar manyan ƙarfin lantarki da aiki a yanayin zafi mai yawa ya sa ya dace da na'urorin ƙara ƙarfin wutar lantarki na tushe da na'urorin RF.
Tsarin Makamashin Rana:Kyakkyawan kaddarorin sarrafa wutar lantarki na SiC sun dace da inverters da masu canza wutar lantarki na photovoltaic (ƙarfin hasken rana).
Motocin Wutar Lantarki (EVs):Ana amfani da SiC sosai a cikin motocin EV don ingantaccen juyar da makamashi, rage samar da zafi, da kuma yawan ƙarfin lantarki.
SiC Substrate 4H Semi-insulating Properties da aikace-aikacensa
Kadarorin:
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Dabaru na sarrafa yawan ƙwayoyin cuta marasa amfani da micropipes: Yana tabbatar da rashin ƙananan bututu, yana inganta ingancin substrate.
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Dabaru na sarrafa monocrystalline: Yana bada garantin tsarin lu'ulu'u guda ɗaya don haɓaka halayen kayan.
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Dabaru na sarrafa haɗaka: Yana rage kasancewar ƙazanta ko abubuwan da aka haɗa, yana tabbatar da tsabtataccen abu.
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Dabaru na sarrafa juriya: Yana ba da damar sarrafa daidaiton juriyar lantarki, wanda yake da mahimmanci ga aikin na'urar.
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Tsarin ƙazanta da dabarun sarrafawa: Yana tsarawa da kuma iyakance shigar da ƙazanta don kiyaye amincin substrate.
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Dabaru na sarrafa faɗin matakin ƙasa: Yana ba da cikakken iko akan faɗin matakai, yana tabbatar da daidaito a cikin substrate
Bayanin substrate mai inci 6 mai tsawon inci 4H-Semi-SiC | ||
| Kadara | Sifili Matsayin Samarwa na MPD (Matsayin Z) | Daraja ta D (D) |
| Diamita (mm) | 145 mm - 150 mm | 145 mm - 150 mm |
| Nau'in Poly-type | 4H | 4H |
| Kauri (um) | 500 ± 15 | 500 ± 25 |
| Tsarin Wafer | A kan axis: ±0.0001° | A kan axis: ±0.05° |
| Yawan bututun micropipe | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Juriyar juriya (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Babban Tsarin Faɗi | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Babban Tsawon Lebur | Notch | Notch |
| Keɓancewar Gefen (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Kwano / Warp | ≤ 3 µm | ≤ 3 µm |
| Taurin kai | Yaren mutanen Poland Ra ≤ 1.5 µm | Yaren mutanen Poland Ra ≤ 1.5 µm |
| Ƙwayoyin Gefen Ta Haske Mai Tsanani | ≤ 20 µm | ≤ 60 µm |
| Faranti Mai Zafi Ta Haske Mai Tsanani | Tarawa ≤ 0.05% | Tarawa ≤ 3% |
| Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi | Abubuwan da ke cikin Carbon na gani ≤ 0.05% | Tarawa ≤ 3% |
| Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani | ≤ 0.05% | Tarawa ≤ 4% |
| Ƙwayoyin Gefen Ta Haske Mai Ƙarfi (Girman) | Ba a yarda da shi ba > Faɗi da Zurfi 02 mm | Ba a yarda da shi ba > Faɗi da Zurfi 02 mm |
| Faɗaɗa Sukurori Mai Taimako | ≤ 500 µm | ≤ 500 µm |
| Gurɓatar Fuskar Silicon Ta Hanyar Haske Mai Tsanani | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Marufi | Akwatin Wafer Mai Yawa ko Akwatin Wafer Guda ɗaya | Akwatin Wafer Mai Yawa ko Akwatin Wafer Guda ɗaya |
Bayanin SiC Substrate mai inci 4 mai kauri 4H-Semi-Insulator
| Sigogi | Sifili Matsayin Samarwa na MPD (Matsayin Z) | Daraja ta D (D) |
|---|---|---|
| Sifofin Jiki | ||
| diamita | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Nau'in Poly-type | 4H | 4H |
| Kauri | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Tsarin Wafer | A kan axis: <600h > 0.5° | A kan axis: <000h > 0.5° |
| Ƙarfin Wutar Lantarki | ||
| Yawan Bututun Micropipe (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Juriya | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Juriyar Geometric | ||
| Babban Tsarin Faɗi | (0x10) ± 5.0° | (0x10) ± 5.0° |
| Babban Tsawon Lebur | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Tsawon Lebur na Biyu | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Tsarin Faɗi na Biyu | 90° CW daga Prime flat ± 5.0° (Si fuska sama) | 90° CW daga Prime flat ± 5.0° (Si fuska sama) |
| Keɓewa a Gefen | 3 mm | 3 mm |
| LTV / TTV / Bow / Warp | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Ingancin Fuskar | ||
| Taushin saman (Polish Ra) | ≤1 nm | ≤1 nm |
| Taushin saman (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Fashewar Gefen (Haske Mai Tsanani) | Ba a yarda da shi ba | Tsawon jimilla ≥10 mm, tsagewa ɗaya ≤2 mm |
| Lalacewar Farantin Hexagon | ≤0.05% tarin yanki | ≤0.1% tarin yanki |
| Yankunan Haɗaka Nau'in Polytype | Ba a yarda da shi ba | ≤1% tarin yanki |
| Abubuwan da ke tattare da Carbon na gani | ≤0.05% tarin yanki | ≤1% tarin yanki |
| Ƙirga-ƙarshen saman Silicon | Ba a yarda da shi ba | Tsawon tarin wafer ≤1 diamita |
| Ƙwayoyin Gefen | Babu wanda aka yarda (≥0.2 mm faɗi/zurfi) | ≤5 kwakwalwan kwamfuta (kowannensu ≤1 mm) |
| Gurɓatar Fuskar Silicon | Ba a kayyade ba | Ba a kayyade ba |
| Marufi | ||
| Marufi | Kaset ɗin wafer mai yawa ko akwati mai wafer mai guda ɗaya | Kaset ɗin Multi-wafer ko |
Aikace-aikace:
TheSiC 4H Semi-insulating substratesana amfani da su ne musamman a cikin na'urorin lantarki masu ƙarfi da kuma masu yawan mita, musamman a cikinFilin RFWaɗannan substrates suna da mahimmanci ga aikace-aikace daban-daban, ciki har daTsarin sadarwa na microwave, radar jerin gwano mai tsari, kumana'urorin gano wutar lantarki mara wayaBabban ƙarfin wutar lantarki da kuma kyawun halayensu na lantarki sun sa suka dace da amfani mai wahala a cikin tsarin lantarki da sadarwa.
SiC epi wafer 4H-N nau'in da aikace-aikacensa
SiC 4H-N Nau'in Epi Wafer da Aikace-aikace
Halayen SiC 4H-N Nau'in Epi Wafer:
Kayan Aiki:
SiC (Silicon Carbide): An san shi da taurinsa mai ban mamaki, ƙarfin watsa zafi mai yawa, da kuma kyawawan halayen lantarki, SiC ya dace da na'urorin lantarki masu aiki sosai.
Nau'in Polytype na 4H-SiC: An san nau'in polytype na 4H-SiC saboda inganci da kwanciyar hankali a aikace-aikacen lantarki.
Doping na nau'in N-type: Yin amfani da sinadarin N-type doping (wanda aka yi da nitrogen) yana ba da kyakkyawan motsi na lantarki, wanda hakan ya sa SiC ya dace da aikace-aikacen mita mai yawa da ƙarfi.
Babban Tsarin Zafin Jiki:
Wafers ɗin SiC suna da ingantaccen watsawar zafi, yawanci daga120–200 W/m·K, yana ba su damar sarrafa zafi yadda ya kamata a cikin na'urori masu ƙarfi kamar transistor da diode.
Faɗin Bandgift:
Tare da bandeji na3.26 eV, 4H-SiC na iya aiki a mafi girman ƙarfin lantarki, mita, da yanayin zafi idan aka kwatanta da na'urorin gargajiya na silicon, wanda hakan ya sa ya dace da aikace-aikacen inganci da aiki mai girma.
Kayayyakin Wutar Lantarki:
Babban motsi na lantarki da kuma ƙarfin lantarki na SiC ya sa ya dace dana'urorin lantarki masu ƙarfi, yana ba da saurin sauyawa da ƙarfin sarrafa wutar lantarki mai yawa da ƙarfin lantarki, wanda ke haifar da ingantaccen tsarin sarrafa wutar lantarki.
Juriyar Inji da Sinadarai:
SiC yana ɗaya daga cikin kayan da suka fi wahala, wanda ya fi lu'u-lu'u, kuma yana da juriya sosai ga iskar shaka da tsatsa, wanda hakan ke sa ya daɗe a cikin mawuyacin yanayi.
Aikace-aikacen SiC 4H-N Type Epi Wafer:
Lantarki Mai Lantarki:
Ana amfani da nau'in wafers na SiC 4H-N na epi sosai a cikinMOSFETs masu ƙarfi, IGBTs, kumadiodesdoncanza wutar lantarkia cikin tsarin kamarmasu canza hasken rana, motocin lantarki, kumatsarin adana makamashi, yana ba da ingantaccen aiki da ingantaccen amfani da makamashi.
Motocin Wutar Lantarki (EVs):
In motocin lantarki masu amfani da wutar lantarki, masu kula da motoci, kumatashoshin caji, SiC wafers suna taimakawa wajen samun ingantaccen ingancin batir, da sauri caji, da kuma inganta aikin makamashi gaba ɗaya saboda ikonsu na jure babban ƙarfi da yanayin zafi.
Tsarin Makamashi Mai Sabuntawa:
Masu Juya Hasken RanaAna amfani da wafers na SiC a cikintsarin makamashin ranadon canza wutar lantarki ta DC daga bangarorin hasken rana zuwa AC, ƙara yawan ingancin tsarin da aiki.
Injin turbin iskaAna amfani da fasahar SiC a cikintsarin sarrafa injin turbin iska, inganta samar da wutar lantarki da kuma inganta juyi.
Tashar Jiragen Sama da Tsaro:
Wafers ɗin SiC sun dace don amfani a cikinna'urorin lantarki na sararin samaniyakumaaikace-aikacen soja, ciki har datsarin radarkumana'urorin lantarki na tauraron dan adam, inda juriya mai ƙarfi ga radiation da kwanciyar hankali na zafi suke da mahimmanci.
Yawan Zafin Jiki da Yawan Aiki:
Wafers ɗin SiC sun fi kyau a cikina'urorin lantarki masu zafin jiki, ana amfani da shi a cikininjunan jiragen sama, kumbon sama jannati, kumatsarin dumama masana'antu, domin suna kiyaye aiki a yanayin zafi mai tsanani. Bugu da ƙari, faɗin bandgift ɗinsu yana ba da damar amfani da shi a cikinaikace-aikacen mita mai yawasoNa'urorin RFkumasadarwa ta microwave.
| Bayani mai inci 6 na nau'in N-type epit axial | |||
| Sigogi | naúrar | Z-MOS | |
| Nau'i | Halin ɗabi'a / Dopant | - | Nau'in N / Nitrogen |
| Layer na Buffer | Kauri na Layer na Buffer | um | 1 |
| Haƙuri a kan kauri Layer na Buffer | % | ±20% | |
| Mayar da hankali kan Layer na Buffer | cm-3 | 1.00E+18 | |
| Juriyar Tsarin Buffer Layer | % | ±20% | |
| Layer na 1 na Epi | Kauri na Epi Layer | um | 11.5 |
| Daidaiton kauri na Epi Layer | % | ±4% | |
| Juriyar Kauri ta Epi Layers((Spec- Matsakaici, Matsakaici)/Taƙaitaccen bayani) | % | ±5% | |
| Tsarin Epi Layer | cm-3 | 1E 15~ 1E 18 | |
| Juriyar Tsarin Taro na Epi Layer | % | 6% | |
| Daidaiton Tattara Tsarin Epi Layer (σ) /matsakaicin) | % | ≤5% | |
| Daidaiton Tattara Layer na Epi <(mafi-min)/(mafi+min> | % | ≤ 10% | |
| Siffar Wafer ta Epitaixal | Rukayya | um | ≤±20 |
| WARP | um | ≤30 | |
| TTV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Halaye na Gabaɗaya | Tsawon gogewa | mm | ≤30mm |
| Ƙwayoyin Gefen | - | BABU ABINDA | |
| Ma'anar lahani | ≥97% (An auna da 2 * 2, Lalacewar masu kisa ta haɗa da: Lalacewar ta haɗa da Ƙananan bututu / Manyan ramuka, Karas, Mai kusurwa uku | ||
| Gurɓatar ƙarfe | atom/cm² | d f f ll i ≤5E10 atoms/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca&Mn) | |
| Kunshin | Bayanan shiryawa | kwamfutoci/akwati | cassette mai wafer mai yawa ko akwati mai wafer guda ɗaya |
| Bayani mai inci 8 na nau'in N-type epitaxial | |||
| Sigogi | naúrar | Z-MOS | |
| Nau'i | Halin ɗabi'a / Dopant | - | Nau'in N / Nitrogen |
| Layer na buffer | Kauri na Layer na Buffer | um | 1 |
| Haƙuri a kan kauri Layer na Buffer | % | ±20% | |
| Mayar da hankali kan Layer na Buffer | cm-3 | 1.00E+18 | |
| Juriyar Tsarin Buffer Layer | % | ±20% | |
| Layer na 1 na Epi | Matsakaicin kauri na Epi Layers | um | 8~ 12 |
| Daidaito tsakanin kauri da Layers na Epi (σ/matsakaicin) | % | ≤2.0 | |
| Juriyar Kauri ta Epi Layers((Takamaiman -Max, Min)/Takamaiman Bayani) | % | ±6 | |
| Matsakaicin Doping na Epi Layers | cm-3 | 8E+15 ~2E+16 | |
| Daidaiton Doping na Epi Layers (σ/matsakaicin) | % | ≤5 | |
| Juriyar Doping ta Epi Layers((Spec -Max，) | % | ± 10.0 | |
| Siffar Wafer ta Epitaixal | Mi )/S ) Warp | um | ≤50.0 |
| Rukayya | um | ± 30.0 | |
| TTV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm × 10mm) | |
| Janar Halaye | Ƙira | - | Tsawon jimilla ≤ 1/2 diamita na Wafer |
| Ƙwayoyin Gefen | - | ≤2 kwakwalwan kwamfuta, Kowane radius ≤1.5mm | |
| Gurɓatar Karfe a Sama | atom/cm2 | ≤5E10 atoms/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca&Mn) | |
| Duba Lalacewa | % | ≥ 96.0 (Lalacewar 2X2 ta haɗa da Micropipe/Manyan ramuka, Karas, Lalacewar Alwatika, Faɗuwa, Linear/IGSF-s, BPD) | |
| Gurɓatar Karfe a Sama | atom/cm2 | ≤5E10 atoms/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca&Mn) | |
| Kunshin | Bayanan shiryawa | - | cassette mai wafer mai yawa ko akwati mai wafer guda ɗaya |
Tambaya da Amsa na SiC wafer
T1: Menene manyan fa'idodin amfani da wafers na SiC fiye da wafers na silicon na gargajiya a cikin na'urorin lantarki na wutar lantarki?
A1:
Wafers ɗin SiC suna ba da fa'idodi da yawa masu mahimmanci fiye da wafers ɗin silicon (Si) na gargajiya a cikin kayan lantarki, gami da:
Ingantaccen Inganci: SiC yana da faɗin bandgap (3.26 eV) idan aka kwatanta da silicon (1.1 eV), wanda ke ba na'urori damar aiki a mafi girman ƙarfin lantarki, mita, da yanayin zafi. Wannan yana haifar da ƙarancin asarar wutar lantarki da ingantaccen aiki a cikin tsarin canza wutar lantarki.
Babban Tsarin Zafin Jiki: Tsarin watsa zafi na SiC ya fi na silicon yawa, wanda ke ba da damar watsa zafi mafi kyau a cikin aikace-aikacen wutar lantarki mai ƙarfi, wanda ke inganta aminci da tsawon rayuwar na'urorin wutar lantarki.
Babban Wutar Lantarki da Gudanar da Yanzu: Na'urorin SiC na iya ɗaukar matakan ƙarfin lantarki mafi girma da na yanzu, wanda hakan ya sa suka dace da aikace-aikacen wutar lantarki mai ƙarfi kamar motocin lantarki, tsarin makamashi mai sabuntawa, da tuƙin injinan masana'antu.
Saurin Sauyawa Mai Sauri: Na'urorin SiC suna da saurin canzawa, wanda ke taimakawa wajen rage asarar makamashi da girman tsarin, wanda hakan ya sa suka dace da aikace-aikacen mita mai yawa.
T2: Menene manyan aikace-aikacen wafers na SiC a masana'antar kera motoci?
A2:
A cikin masana'antar kera motoci, ana amfani da wafers na SiC galibi a cikin:
Motocin Wutar Lantarki (EV): Abubuwan da aka gina bisa SiC kamarinverterskumaMOSFETs masu ƙarfiinganta inganci da aikin injinan samar da wutar lantarki na motocin lantarki ta hanyar ba da damar saurin sauyawa da kuma yawan kuzari mai yawa. Wannan yana haifar da tsawon rayuwar batir da kuma ingantaccen aikin mota gaba ɗaya.
Caja a Cikin AjiNa'urorin SiC suna taimakawa wajen inganta ingancin tsarin caji na cikin jirgi ta hanyar ba da damar saurin lokacin caji da kuma ingantaccen sarrafa zafi, wanda yake da mahimmanci ga EVs don tallafawa tashoshin caji masu ƙarfi.
Tsarin Gudanar da Baturi (BMS)Fasahar SiC tana inganta ingancin aikiTsarin sarrafa batir, yana ba da damar ingantaccen tsarin wutar lantarki, ingantaccen sarrafa wutar lantarki, da tsawon rayuwar baturi.
Masu Canza DC-DCAna amfani da wafers na SiC a cikinMasu sauya DC-DCdon canza wutar lantarki mai ƙarfin lantarki mai girma DC zuwa wutar lantarki mai ƙarancin wutar lantarki DC cikin inganci, wanda yake da mahimmanci a cikin motocin lantarki don sarrafa wutar lantarki daga baturi zuwa sassa daban-daban a cikin abin hawa.
Ingantaccen aikin SiC a cikin manyan ƙarfin lantarki, zafin jiki mai yawa, da kuma aikace-aikacen inganci mai yawa ya sa ya zama mahimmanci ga sauyawar masana'antar kera motoci zuwa motsi na lantarki.
Bayanin SiC wafer mai inci 6 mai girman inci 4H-N | ||
| Kadara | Sifili Matsayin Samarwa na MPD (Matsayin Z) | Daraja ta D (D) |
| Matsayi | Sifili Matsayin Samarwa na MPD (Matsayin Z) | Daraja ta D (D) |
| diamita | 149.5 mm – 150.0 mm | 149.5 mm – 150.0 mm |
| Nau'in Poly-type | 4H | 4H |
| Kauri | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Tsarin Wafer | A gefen axis: 4.0° zuwa <1120> ± 0.5° | A gefen axis: 4.0° zuwa <1120> ± 0.5° |
| Yawan bututun micropipe | ≤ 0.2 cm² | ≤ 15 cm² |
| Juriya | 0.015 – 0.024 Ω·cm | 0.015 – 0.028 Ω·cm |
| Babban Tsarin Faɗi | [10-10] ± 50° | [10-10] ± 50° |
| Babban Tsawon Lebur | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Keɓewa a Gefen | 3 mm | 3 mm |
| LTV/TIV / Bow / Warp | 2.5µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Taurin kai | Ra na Poland ≤ 1 nm | Ra na Poland ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Fashewar Gefen Ta Hanyar Haske Mai Tsanani | Tsawon da aka tara ≤ 20 mm tsayi ɗaya ≤ 2 mm | Tsawon da aka tara ≤ 20 mm tsayi ɗaya ≤ 2 mm |
| Faranti na Hex ta Haske Mai Tsanani | Yankin da aka tara ≤ 0.05% | Yankin da aka tara ≤ 0.1% |
| Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi | Yankin da aka tara ≤ 0.05% | Yankin da aka tara ≤ 3% |
| Abubuwan da ke tattare da Carbon na gani | Yankin da aka tara ≤ 0.05% | Yankin da aka tara ≤ 5% |
| Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani | Tsawon jimilla ≤ diamita na wafer 1 | |
| Ƙwayoyin Gefen Ta Haske Mai Tsanani | Babu wanda aka yarda da shi ≥ 0.2 mm faɗi da zurfi | An yarda da 7, ≤ 1 mm kowanne |
| Rushewar Sukurin Zaren | < 500 cm³ | < 500 cm³ |
| Gurɓatar Fuskar Silicon Ta Hanyar Haske Mai Tsanani | ||
| Marufi | Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya | Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya |
Bayanin SiC wafer mai inci 8 mai girman inci 4H-N | ||
| Kadara | Sifili Matsayin Samarwa na MPD (Matsayin Z) | Daraja ta D (D) |
| Matsayi | Sifili Matsayin Samarwa na MPD (Matsayin Z) | Daraja ta D (D) |
| diamita | 199.5 mm – 200.0 mm | 199.5 mm – 200.0 mm |
| Nau'in Poly-type | 4H | 4H |
| Kauri | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Tsarin Wafer | 4.0° zuwa <110> ± 0.5° | 4.0° zuwa <110> ± 0.5° |
| Yawan bututun micropipe | ≤ 0.2 cm² | ≤ 5 cm² |
| Juriya | 0.015 – 0.025 Ω·cm | 0.015 – 0.028 Ω·cm |
| Jagorancin Mai Daraja | ||
| Keɓewa a Gefen | 3 mm | 3 mm |
| LTV/TIV / Bow / Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Taurin kai | Ra na Poland ≤ 1 nm | Ra na Poland ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Fashewar Gefen Ta Hanyar Haske Mai Tsanani | Tsawon da aka tara ≤ 20 mm tsayi ɗaya ≤ 2 mm | Tsawon da aka tara ≤ 20 mm tsayi ɗaya ≤ 2 mm |
| Faranti na Hex ta Haske Mai Tsanani | Yankin da aka tara ≤ 0.05% | Yankin da aka tara ≤ 0.1% |
| Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi | Yankin da aka tara ≤ 0.05% | Yankin da aka tara ≤ 3% |
| Abubuwan da ke tattare da Carbon na gani | Yankin da aka tara ≤ 0.05% | Yankin da aka tara ≤ 5% |
| Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani | Tsawon jimilla ≤ diamita na wafer 1 | |
| Ƙwayoyin Gefen Ta Haske Mai Tsanani | Babu wanda aka yarda da shi ≥ 0.2 mm faɗi da zurfi | An yarda da 7, ≤ 1 mm kowanne |
| Rushewar Sukurin Zaren | < 500 cm³ | < 500 cm³ |
| Gurɓatar Fuskar Silicon Ta Hanyar Haske Mai Tsanani | ||
| Marufi | Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya | Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya |
Bayanin substrate mai inci 6 mai tsawon inci 4H-Semi-SiC | ||
| Kadara | Sifili Matsayin Samarwa na MPD (Matsayin Z) | Daraja ta D (D) |
| Diamita (mm) | 145 mm – 150 mm | 145 mm – 150 mm |
| Nau'in Poly-type | 4H | 4H |
| Kauri (um) | 500 ± 15 | 500 ± 25 |
| Tsarin Wafer | A kan axis: ±0.0001° | A kan axis: ±0.05° |
| Yawan bututun micropipe | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Juriyar juriya (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Babban Tsarin Faɗi | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Babban Tsawon Lebur | Notch | Notch |
| Keɓancewar Gefen (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Kwano / Warp | ≤ 3 µm | ≤ 3 µm |
| Taurin kai | Yaren mutanen Poland Ra ≤ 1.5 µm | Yaren mutanen Poland Ra ≤ 1.5 µm |
| Ƙwayoyin Gefen Ta Haske Mai Tsanani | ≤ 20 µm | ≤ 60 µm |
| Faranti Mai Zafi Ta Haske Mai Tsanani | Tarawa ≤ 0.05% | Tarawa ≤ 3% |
| Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi | Abubuwan da ke cikin Carbon na gani ≤ 0.05% | Tarawa ≤ 3% |
| Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani | ≤ 0.05% | Tarawa ≤ 4% |
| Ƙwayoyin Gefen Ta Haske Mai Ƙarfi (Girman) | Ba a yarda da shi ba > Faɗi da Zurfi 02 mm | Ba a yarda da shi ba > Faɗi da Zurfi 02 mm |
| Faɗaɗa Sukurori Mai Taimako | ≤ 500 µm | ≤ 500 µm |
| Gurɓatar Fuskar Silicon Ta Hanyar Haske Mai Tsanani | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Marufi | Akwatin Wafer Mai Yawa ko Akwatin Wafer Guda ɗaya | Akwatin Wafer Mai Yawa ko Akwatin Wafer Guda ɗaya |
Bayanin SiC Substrate mai inci 4 mai kauri 4H-Semi-Insulator
| Sigogi | Sifili Matsayin Samarwa na MPD (Matsayin Z) | Daraja ta D (D) |
|---|---|---|
| Sifofin Jiki | ||
| diamita | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Nau'in Poly-type | 4H | 4H |
| Kauri | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Tsarin Wafer | A kan axis: <600h > 0.5° | A kan axis: <000h > 0.5° |
| Ƙarfin Wutar Lantarki | ||
| Yawan Bututun Micropipe (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Juriya | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Juriyar Geometric | ||
| Babban Tsarin Faɗi | (0×10) ± 5.0° | (0×10) ± 5.0° |
| Babban Tsawon Lebur | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Tsawon Lebur na Biyu | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Tsarin Faɗi na Biyu | 90° CW daga Prime flat ± 5.0° (Si fuska sama) | 90° CW daga Prime flat ± 5.0° (Si fuska sama) |
| Keɓewa a Gefen | 3 mm | 3 mm |
| LTV / TTV / Bow / Warp | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Ingancin Fuskar | ||
| Taushin saman (Polish Ra) | ≤1 nm | ≤1 nm |
| Taushin saman (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Fashewar Gefen (Haske Mai Tsanani) | Ba a yarda da shi ba | Tsawon jimilla ≥10 mm, tsagewa ɗaya ≤2 mm |
| Lalacewar Farantin Hexagon | ≤0.05% tarin yanki | ≤0.1% tarin yanki |
| Yankunan Haɗaka Nau'in Polytype | Ba a yarda da shi ba | ≤1% tarin yanki |
| Abubuwan da ke tattare da Carbon na gani | ≤0.05% tarin yanki | ≤1% tarin yanki |
| Ƙirga-ƙarshen saman Silicon | Ba a yarda da shi ba | Tsawon tarin wafer ≤1 diamita |
| Ƙwayoyin Gefen | Babu wanda aka yarda (≥0.2 mm faɗi/zurfi) | ≤5 kwakwalwan kwamfuta (kowannensu ≤1 mm) |
| Gurɓatar Fuskar Silicon | Ba a kayyade ba | Ba a kayyade ba |
| Marufi | ||
| Marufi | Kaset ɗin wafer mai yawa ko akwati mai wafer mai guda ɗaya | Kaset ɗin Multi-wafer ko |
| Bayani mai inci 6 na nau'in N-type epit axial | |||
| Sigogi | naúrar | Z-MOS | |
| Nau'i | Halin ɗabi'a / Dopant | - | Nau'in N / Nitrogen |
| Layer na Buffer | Kauri na Layer na Buffer | um | 1 |
| Haƙuri a kan kauri Layer na Buffer | % | ±20% | |
| Mayar da hankali kan Layer na Buffer | cm-3 | 1.00E+18 | |
| Juriyar Tsarin Buffer Layer | % | ±20% | |
| Layer na 1 na Epi | Kauri na Epi Layer | um | 11.5 |
| Daidaiton kauri na Epi Layer | % | ±4% | |
| Juriyar Kauri ta Epi Layers((Spec- Matsakaici, Matsakaici)/Taƙaitaccen bayani) | % | ±5% | |
| Tsarin Epi Layer | cm-3 | 1E 15~ 1E 18 | |
| Juriyar Tsarin Taro na Epi Layer | % | 6% | |
| Daidaiton Tattara Tsarin Epi Layer (σ) /matsakaicin) | % | ≤5% | |
| Daidaiton Tattara Layer na Epi <(mafi-min)/(mafi+min> | % | ≤ 10% | |
| Siffar Wafer ta Epitaixal | Rukayya | um | ≤±20 |
| WARP | um | ≤30 | |
| TTV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Halaye na Gabaɗaya | Tsawon gogewa | mm | ≤30mm |
| Ƙwayoyin Gefen | - | BABU ABINDA | |
| Ma'anar lahani | ≥97% (An auna da 2 * 2, Lalacewar masu kisa ta haɗa da: Lalacewar ta haɗa da Ƙananan bututu / Manyan ramuka, Karas, Mai kusurwa uku | ||
| Gurɓatar ƙarfe | atom/cm² | d f f ll i ≤5E10 atoms/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca&Mn) | |
| Kunshin | Bayanan shiryawa | kwamfutoci/akwati | cassette mai wafer mai yawa ko akwati mai wafer guda ɗaya |
| Bayani mai inci 8 na nau'in N-type epitaxial | |||
| Sigogi | naúrar | Z-MOS | |
| Nau'i | Halin ɗabi'a / Dopant | - | Nau'in N / Nitrogen |
| Layer na buffer | Kauri na Layer na Buffer | um | 1 |
| Haƙuri a kan kauri Layer na Buffer | % | ±20% | |
| Mayar da hankali kan Layer na Buffer | cm-3 | 1.00E+18 | |
| Juriyar Tsarin Buffer Layer | % | ±20% | |
| Layer na 1 na Epi | Matsakaicin kauri na Epi Layers | um | 8~ 12 |
| Daidaito tsakanin kauri da Layers na Epi (σ/matsakaicin) | % | ≤2.0 | |
| Juriyar Kauri ta Epi Layers((Takamaiman -Max, Min)/Takamaiman Bayani) | % | ±6 | |
| Matsakaicin Doping na Epi Layers | cm-3 | 8E+15 ~2E+16 | |
| Daidaiton Doping na Epi Layers (σ/matsakaicin) | % | ≤5 | |
| Juriyar Doping ta Epi Layers((Spec -Max，) | % | ± 10.0 | |
| Siffar Wafer ta Epitaixal | Mi )/S ) Warp | um | ≤50.0 |
| Rukayya | um | ± 30.0 | |
| TTV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm × 10mm) | |
| Janar Halaye | Ƙira | - | Tsawon jimilla ≤ 1/2 diamita na Wafer |
| Ƙwayoyin Gefen | - | ≤2 kwakwalwan kwamfuta, Kowane radius ≤1.5mm | |
| Gurɓatar Karfe a Sama | atom/cm2 | ≤5E10 atoms/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca&Mn) | |
| Duba Lalacewa | % | ≥ 96.0 (Lalacewar 2X2 ta haɗa da Micropipe/Manyan ramuka, Karas, Lalacewar Alwatika, Faɗuwa, Linear/IGSF-s, BPD) | |
| Gurɓatar Karfe a Sama | atom/cm2 | ≤5E10 atoms/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca&Mn) | |
| Kunshin | Bayanan shiryawa | - | cassette mai wafer mai yawa ko akwati mai wafer guda ɗaya |
T1: Menene manyan fa'idodin amfani da wafers na SiC fiye da wafers na silicon na gargajiya a cikin na'urorin lantarki na wutar lantarki?
A1:
Wafers ɗin SiC suna ba da fa'idodi da yawa masu mahimmanci fiye da wafers ɗin silicon (Si) na gargajiya a cikin kayan lantarki, gami da:
Ingantaccen Inganci: SiC yana da faɗin bandgap (3.26 eV) idan aka kwatanta da silicon (1.1 eV), wanda ke ba na'urori damar aiki a mafi girman ƙarfin lantarki, mita, da yanayin zafi. Wannan yana haifar da ƙarancin asarar wutar lantarki da ingantaccen aiki a cikin tsarin canza wutar lantarki.
Babban Tsarin Zafin Jiki: Tsarin watsa zafi na SiC ya fi na silicon yawa, wanda ke ba da damar watsa zafi mafi kyau a cikin aikace-aikacen wutar lantarki mai ƙarfi, wanda ke inganta aminci da tsawon rayuwar na'urorin wutar lantarki.
Babban Wutar Lantarki da Gudanar da Yanzu: Na'urorin SiC na iya ɗaukar matakan ƙarfin lantarki mafi girma da na yanzu, wanda hakan ya sa suka dace da aikace-aikacen wutar lantarki mai ƙarfi kamar motocin lantarki, tsarin makamashi mai sabuntawa, da tuƙin injinan masana'antu.
Saurin Sauyawa Mai Sauri: Na'urorin SiC suna da saurin canzawa, wanda ke taimakawa wajen rage asarar makamashi da girman tsarin, wanda hakan ya sa suka dace da aikace-aikacen mita mai yawa.
T2: Menene manyan aikace-aikacen wafers na SiC a masana'antar kera motoci?
A2:
A cikin masana'antar kera motoci, ana amfani da wafers na SiC galibi a cikin:
Motocin Wutar Lantarki (EV): Abubuwan da aka gina bisa SiC kamarinverterskumaMOSFETs masu ƙarfiinganta inganci da aikin injinan samar da wutar lantarki na motocin lantarki ta hanyar ba da damar saurin sauyawa da kuma yawan kuzari mai yawa. Wannan yana haifar da tsawon rayuwar batir da kuma ingantaccen aikin mota gaba ɗaya.
Caja a Cikin AjiNa'urorin SiC suna taimakawa wajen inganta ingancin tsarin caji na cikin jirgi ta hanyar ba da damar saurin lokacin caji da kuma ingantaccen sarrafa zafi, wanda yake da mahimmanci ga EVs don tallafawa tashoshin caji masu ƙarfi.
Tsarin Gudanar da Baturi (BMS)Fasahar SiC tana inganta ingancin aikiTsarin sarrafa batir, yana ba da damar ingantaccen tsarin wutar lantarki, ingantaccen sarrafa wutar lantarki, da tsawon rayuwar baturi.
Masu Canza DC-DCAna amfani da wafers na SiC a cikinMasu sauya DC-DCdon canza wutar lantarki mai ƙarfin lantarki mai girma DC zuwa wutar lantarki mai ƙarancin wutar lantarki DC cikin inganci, wanda yake da mahimmanci a cikin motocin lantarki don sarrafa wutar lantarki daga baturi zuwa sassa daban-daban a cikin abin hawa.
Ingantaccen aikin SiC a cikin manyan ƙarfin lantarki, zafin jiki mai yawa, da kuma aikace-aikacen inganci mai yawa ya sa ya zama mahimmanci ga sauyawar masana'antar kera motoci zuwa motsi na lantarki.
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