SiC substrate Dia200mm 4H-N da HPSI Silicon carbide
4H-N da HPSI nau'in nau'in silicon carbide ne (SiC), tare da tsarin lattice na crystal wanda ya ƙunshi raka'a hexagonal waɗanda aka yi da carbon huɗu da ƙwayoyin silicon guda huɗu. Wannan tsarin yana ba da kayan aiki tare da ingantacciyar motsi na lantarki da lalacewar halayen ƙarfin lantarki. Daga cikin dukkan nau'ikan SiC, 4H-N da HPSI ana amfani da su sosai a fagen lantarki saboda daidaiton electron da motsin rami da haɓakar yanayin zafi.
Bayyanar 8inch substrates SiC yana wakiltar ci gaba mai mahimmanci ga masana'antar semiconductor. Kayayyakin semiconductor na tushen silicon na al'ada sun sami raguwar aiki a ƙarƙashin matsanancin yanayi kamar yanayin zafi mai girma da ƙarfin lantarki, yayin da ma'aunin SiC na iya kula da kyakkyawan aikinsu. Idan aka kwatanta da ƙananan ƙananan kayan aiki, 8inch SiC substrates suna ba da wani yanki mai girma na yanki guda ɗaya, wanda ke fassara zuwa mafi girman ingancin samarwa da ƙananan farashi, mahimmanci don tuki tsarin kasuwanci na fasahar SiC.
Fasahar haɓaka don 8inch silicon carbide (SiC) substrates yana buƙatar ainihin madaidaici da tsabta. Ingancin ma'auni yana tasiri kai tsaye aikin na'urori masu zuwa, don haka masana'antun dole ne su yi amfani da na'urori masu tasowa don tabbatar da kamalar lu'ulu'u da ƙarancin lahani na kayan aikin. Wannan yawanci ya ƙunshi matakai masu rikitarwa na tururi (CVD) da ingantattun ci gaban kristal da dabarun yanke. 4H-N da HPSI SiC substrates ana amfani da su musamman a fagen wutar lantarki, kamar a cikin manyan masu canza wutar lantarki, masu jujjuyawa don motocin lantarki, da tsarin makamashi mai sabuntawa.
Za mu iya samar da 4H-N 8inch SiC substrate, daban-daban maki na substrate stock wafers. Hakanan zamu iya shirya gyare-gyare gwargwadon bukatunku. Maraba da tambaya!
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