SiC substrate 3inch 350um kauri HPSI nau'in Firayim Grade dummmy grade

SiC Substrate 3inch 350um kauri HPSI nau'in Firayim Grade dummmy daraja Featured Hoton

Takaitaccen Bayani:

3-inch High Purity Silicon Carbide (SiC) wafers an kera su musamman don buƙatar aikace-aikace a cikin lantarki, optoelectronics, da bincike na ci gaba. Akwai a cikin Production, Bincike, da Dummy Grades, waɗannan wafers suna ba da juriya na musamman, ƙarancin ƙarancin lahani, da ingancin saman ƙasa. Tare da kaddarorin da ba a kwance ba, suna ba da ingantaccen dandamali don ƙirƙirar na'urori masu ƙarfi waɗanda ke aiki a ƙarƙashin matsanancin yanayin zafi da lantarki.

Aika mana imel

Cikakken Bayani

Tags samfurin

Kayayyaki

Siga	Matsayin samarwa	Matsayin Bincike	Dummy Grade	Naúrar
Daraja	Matsayin samarwa	Matsayin Bincike	Dummy Grade
Diamita	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Kauri	500 ± 25	500 ± 25	500 ± 25	µm
Wafer Orientation	Kan-axis: <0001> ± 0.5°	Kan-axis: <0001> ± 2.0°	Kan-axis: <0001> ± 2.0°	digiri
Maƙarƙashiya Maɗaukaki (MPD)	≤ 1	≤ 5	≤ 10	cm-2^-2-2
Juriya na Lantarki	≥ 1E10	≥ 1E5	≥ 1E5	Ω · cm
Dopant	An kwance	An kwance	An kwance
Hannun Filayen Firamare	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	digiri
Tsawon Fitowa na Farko	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Tsawon Lantarki na Sakandare	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Gabatarwar Flat na Sakandare	90° CW daga firamare lebur ± 5.0°	90° CW daga firamare lebur ± 5.0°	90° CW daga firamare lebur ± 5.0°	digiri
Ƙarƙashin Ƙarfi	3	3	3	mm
LTV/TTV/Baka/Warp	3 / 10 / ± 30 / 40	3 / 10 / ± 30 / 40	5 / 15 / ± 40 / 45	µm
Tashin Lafiya	Si-fuska: CMP, C-fuska: goge	Si-fuska: CMP, C-fuska: goge	Si-fuska: CMP, C-fuska: goge
Cracks (Haske mai ƙarfi)	Babu	Babu	Babu
Hex Plates (Haske mai ƙarfi)	Babu	Babu	Tarin yanki 10%	%
Yankunan Polytype (Haske Mai Ƙarfi)	Yankin tarawa 5%	Tarin yanki 20%	Tarin yanki 30%	%
Scratches (Haske mai ƙarfi)	≤ 5 scratches, tara tsayi ≤ 150	≤ 10 scratches, tara tsayi ≤ 200	≤ 10 scratches, tara tsayi ≤ 200	mm
Chipping Edge	Babu ≥ 0.5 mm nisa/zurfin	2 an yarda ≤ 1 mm nisa/zurfin	5 an yarda ≤ 5 mm nisa/zurfin	mm
Gurbatar Sama	Babu	Babu	Babu

Aikace-aikace

1. High-Power Electronics
Maɗaukakin haɓakar zafin jiki da faffadan bandgap na wafers na SiC ya sa su dace don babban iko, na'urori masu tsayi:
●MOSFETs da IGBTs don canza wutar lantarki.
●Ingantattun tsarin wutar lantarki na abin hawa, gami da inverters da caja.
●Smart grid kayayyakin more rayuwa da sabunta makamashi tsarin.
2. RF da Microwave Systems
Abubuwan SiC suna ba da damar RF mai girma da aikace-aikacen microwave tare da ƙarancin sigina:
●Tsarin sadarwa da tauraron dan adam.
●Tsarin radar sararin samaniya.
● Abubuwan haɓaka cibiyar sadarwa na 5G.
3. Optoelectronics da Sensors
Abubuwan musamman na SiC suna tallafawa aikace-aikacen optoelectronic iri-iri:
●Mai gano UV don kula da muhalli da fahimtar masana'antu.
● LED da Laser substrates don m-state lighting da daidaitattun kayan aiki.
●Na'urori masu zafi masu zafi don sararin samaniya da masana'antu na motoci.
4. Bincike da Ci gaba
Bambance-bambancen maki (Samarwa, Bincike, Dummy) yana ba da damar gwaji mai zurfi da ƙirar na'urar a cikin masana'antu da masana'antu.

Amfani

● Amincewa:Kyakkyawan juriya da kwanciyar hankali a cikin maki.
● Keɓancewa:Keɓaɓɓen daidaitawa da kauri don dacewa da buƙatu daban-daban.
●Mafi Girma:Abun da ba a kwance ba yana tabbatar da ƙarancin bambance-bambance masu alaƙa da ƙazanta.
● Ƙimar ƙarfi:Ya dace da buƙatun duka samarwa da yawa da bincike na gwaji.
SiC wafers masu tsafta inch 3 sune ƙofar ku zuwa manyan na'urori masu aiki da sabbin ci gaban fasaha. Don tambayoyi da cikakkun bayanai, tuntuɓe mu a yau.

Takaitawa

3-inch High Purity Silicon Carbide (SiC) Wafers, samuwa a cikin Production, Bincike, da Dummy Grades, ƙira ne masu ƙima waɗanda aka tsara don manyan kayan lantarki, tsarin RF / microwave, optoelectronics, da R&D na ci gaba. Waɗannan wafers sun ƙunshi kaddarorin da ba a rufe su ba, kaddarorin masu rufewa tare da kyakkyawan juriya (≥1E10 Ω · cm don Matsayin Samarwa), ƙarancin ƙarancin micropipe (≤1 cm-2 ^ -2-2), da ingantaccen ingancin saman. An inganta su don manyan ayyuka, gami da canza wutar lantarki, sadarwa, jin UV, da fasahar LED. Tare da daidaitawar da za a iya daidaitawa, ingantaccen yanayin zafi, da ingantattun kaddarorin inji, waɗannan wafers na SiC suna ba da damar ƙirƙira ingantaccen na'ura da ingantaccen ƙirƙira a cikin masana'antu.