SiC substrate 3in 350um kauri nau'in HPSI Prime Grade Dummy grade
Kadarorin
| Sigogi | Matsayin Samarwa | Matsayin Bincike | Daraja ta Karya | Naúrar |
| Matsayi | Matsayin Samarwa | Matsayin Bincike | Daraja ta Karya | |
| diamita | 76.2 ± 0.5 | 76.2 ± 0.5 | 76.2 ± 0.5 | mm |
| Kauri | 500 ± 25 | 500 ± 25 | 500 ± 25 | µm |
| Tsarin Wafer | A kan axis: <0001> ± 0.5° | A kan axis: <0001> ± 2.0° | A kan axis: <0001> ± 2.0° | digiri |
| Yawan Bututun Micro (MPD) | ≤ 1 | ≤ 5 | ≤ 10 | cm−2^-2−2 |
| Juriyar Lantarki | ≥ 1E10 | ≥ 1E5 | ≥ 1E5 | Ω·cm |
| Dopant | Ba a taɓa shan ƙwayoyi ba | Ba a taɓa shan ƙwayoyi ba | Ba a taɓa shan ƙwayoyi ba | |
| Babban Tsarin Faɗi | {1-100} ± 5.0° | {1-100} ± 5.0° | {1-100} ± 5.0° | digiri |
| Babban Tsawon Lebur | 32.5 ± 3.0 | 32.5 ± 3.0 | 32.5 ± 3.0 | mm |
| Tsawon Lebur na Biyu | 18.0 ± 2.0 | 18.0 ± 2.0 | 18.0 ± 2.0 | mm |
| Tsarin Faɗi na Biyu | 90° CW daga babban ɗakin kwana ± 5.0° | 90° CW daga babban ɗakin kwana ± 5.0° | 90° CW daga babban ɗakin kwana ± 5.0° | digiri |
| Keɓewa a Gefen | 3 | 3 | 3 | mm |
| LTV/TTV/Bow/Warp | 3 / 10 / ± 30 / 40 | 3 / 10 / ± 30 / 40 | 5 / 15 / ±40 / 45 | µm |
| Taushin saman | Si-fuskar: CMP, C-fuskar: An goge | Si-fuskar: CMP, C-fuskar: An goge | Si-fuskar: CMP, C-fuskar: An goge | |
| Fashewa (Haske Mai Tsanani) | Babu | Babu | Babu | |
| Faranti na Hex (Haske Mai Tsanani) | Babu | Babu | Yankin da aka tara 10% | % |
| Yankunan da aka fi amfani da su (Haske Mai Tsanani) | Yankin da aka tara 5% | Yankin da aka tara 20% | Yankin da aka tara 30% | % |
| Ƙira (Haske Mai Tsanani) | ≤ 5 karce, tsawon da aka tara ≤ 150 | ≤ 10 karce, tsawon da aka tara ≤ 200 | ≤ 10 karce, tsawon da aka tara ≤ 200 | mm |
| Ƙunƙwasawa na Edge | Babu ≥ 0.5 mm faɗi/zurfi | An yarda da 2 ≤ Faɗin/zurfin 1 mm | An yarda da 5 ≤ Faɗi/zurfi 5 mm | mm |
| Gurɓatar Fuskar | Babu | Babu | Babu |
Aikace-aikace
1. Babban Lantarki Mai Ƙarfi
Babban ƙarfin wutar lantarki mai ƙarfi da kuma faɗin bandgip na wafers na SiC sun sa su dace da na'urori masu ƙarfi da mita mai yawa:
●MOSFETs da IGBTs don canza wutar lantarki.
●Tsarin samar da wutar lantarki na zamani ga motocin lantarki, gami da inverters da caja.
●Kayayyakin samar da wutar lantarki masu wayo da tsarin makamashi mai sabuntawa.
2. Tsarin RF da Microwave
SiC substrates yana ba da damar amfani da RF mai yawan mita da microwave tare da ƙarancin asarar sigina:
● Tsarin sadarwa da tauraron dan adam.
●Tsarin radar na sararin samaniya.
●Kayan haɗin yanar gizo na 5G masu ci gaba.
3. Na'urorin lantarki da na'urori masu auna sigina
Abubuwan da ke da alaƙa da SiC suna tallafawa nau'ikan aikace-aikacen optoelectronic iri-iri:
●Na'urorin gano UV don sa ido kan muhalli da kuma fahimtar masana'antu.
●Kayan LED da Laser don hasken da aka yi da ƙarfi da kuma kayan aiki masu inganci.
● Na'urori masu auna zafin jiki mai yawa don masana'antar sararin samaniya da motoci.
4. Bincike da Ci gaba
Bambancin maki (Samarwa, Bincike, da kuma Ƙira) yana ba da damar yin gwaji da kuma yin amfani da na'urori a fannin ilimi da masana'antu.
Fa'idodi
● Aminci:Kyakkyawan juriya da kwanciyar hankali a duk matakai.
●Kyautatawa:An tsara yanayin da kauri don dacewa da buƙatu daban-daban.
●Tsarkaka Mai Girma:Abun da ba a yi amfani da shi ba yana tabbatar da ƙarancin bambance-bambancen da suka shafi ƙazanta.
●Sauƙaƙewa:Ya cika buƙatun samar da kayayyaki da yawa da kuma binciken gwaji.
Wafers ɗin SiC mai inci 3 masu tsarki su ne hanyoyinku na zuwa ga na'urori masu inganci da ci gaban fasaha na zamani. Don tambayoyi da cikakkun bayanai, tuntuɓe mu a yau.
Takaitaccen Bayani
Wafers ɗin High Purity Silicon Carbide (SiC) mai inci 3, waɗanda ake samu a cikin Samarwa, Bincike, da Dummy Grades, manyan abubuwan da aka ƙera su ne don na'urorin lantarki masu ƙarfi, tsarin RF/microwave, optoelectronics, da kuma ci gaban R&D. Waɗannan wafers ɗin suna da kaddarorin da ba su da rufi, masu rufi mai ƙarfi tare da kyakkyawan juriya (≥1E10 Ω·cm don Matsayin Samarwa), ƙarancin yawan bututun micro (≤1 cm−2^-2−2), da kuma ingancin saman da ba a saba gani ba. An inganta su don aikace-aikacen aiki mai girma, gami da canza wutar lantarki, sadarwa, hasken UV, da fasahar LED. Tare da yanayin da za a iya gyarawa, ingantaccen yanayin zafi, da kuma kyawawan halayen injiniya, waɗannan wafers ɗin SiC suna ba da damar ƙera na'urori masu inganci, abin dogaro da sabbin abubuwa a cikin masana'antu.
Cikakken Zane
