SiC Ingot 4H Dia 4in 6in Kauri 5-10mm Bincike / Daraja Mai Ban Mamaki
Kadarorin
1. Tsarin Crystal da Gabatarwa
Nau'in Siffa: 4H (tsarin hexagon)
Madaidaitan Lattice:
a = 3.073 Å
c = 10.053 Å
Gabatarwa: Yawanci [0001] (C-plane), amma wasu jagorori kamar [11\overline{2}0] (A-plane) suma suna samuwa idan an buƙata.
2. Girman Jiki
Diamita:
Zaɓuɓɓukan yau da kullun: inci 4 (100 mm) da inci 6 (150 mm)
Kauri:
Akwai a cikin kewayon 5-10 mm, ana iya daidaita shi dangane da buƙatun aikace-aikacen.
3. Kayayyakin Wutar Lantarki
Nau'in Magungunan Doping: Akwai shi a cikin intrinsic (semi-insulating), n-type (an haɗa shi da nitrogen), ko p-type (an haɗa shi da aluminum ko boron).
4. Halayen Zafi da Inji
Tsarin watsa zafi: 3.5-4.9 W/cm·K a zafin ɗaki, wanda ke ba da damar watsa zafi mai kyau.
Tauri: Mohs sikelin 9, wanda hakan ya sa SiC ta biyu bayan lu'u-lu'u a tauri.
| Sigogi | Cikakkun bayanai | Naúrar |
| Hanyar Girma | PVT (Jikin Tururi Sufuri) | |
| diamita | 50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5 | mm |
| Nau'in Polytype | 4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm) | |
| Tsarin Fuskar | 0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (wasu) | digiri |
| Nau'i | Nau'in N | |
| Kauri | 5-10 / 10-15 / >15 | mm |
| Babban Tsarin Faɗi | (10-10) ± 5.0˚ | digiri |
| Babban Tsawon Lebur | 15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm) | mm |
| Tsarin Faɗi na Biyu | 90˚ CCW daga daidaitawa ± 5.0˚ | digiri |
| Tsawon Lebur na Biyu | 8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Babu (150 mm) | mm |
| Matsayi | Bincike / Batsa |
Aikace-aikace
1. Bincike da Ci gaba
Ingot ɗin 4H-SiC mai matakin bincike ya dace da dakunan gwaje-gwaje na ilimi da na masana'antu waɗanda suka mai da hankali kan haɓaka na'urorin da ke tushen SiC. Ingancinsa mai kyau yana ba da damar yin gwaji daidai akan kaddarorin SiC, kamar:
Nazarin motsi na jigilar kaya.
Dabaru na tantance lahani da rage girman lahani.
Inganta hanyoyin ci gaban epitaxial.
2. Ƙarƙashin ƙasa
Ana amfani da ingot mai daraja sosai wajen gwaji, daidaitawa, da kuma amfani da samfura. Madadin mai araha ne ga:
Daidaita sigogin tsari a cikin Tsabtace Tururin Sinadarai (CVD) ko Tsabtace Tururin Sinadarai (PVD).
Kimanta hanyoyin gogewa da gogewa a cikin yanayin masana'antu.
3. Lantarki Mai Lantarki
Saboda faɗin bandgip ɗinsa da kuma yawan ƙarfin thermal, 4H-SiC ginshiƙi ne na kayan lantarki masu amfani da wutar lantarki, kamar:
MOSFETs masu ƙarfin lantarki mai yawa.
Na'urorin Hana Shingayen Schottky (SBDs).
Transistors na Tasirin Filin Mannewa (JFETs).
Aikace-aikacen sun haɗa da inverters na motocin lantarki, inverters na hasken rana, da kuma grids masu wayo.
4. Na'urorin Yawan Mita
Babban motsi na electron da ƙarancin asarar capacitance na kayan ya sa ya dace da:
Transistors na Mitar Rediyo (RF).
Tsarin sadarwa mara waya, gami da kayayyakin more rayuwa na 5G.
Aikace-aikacen sararin samaniya da tsaro waɗanda ke buƙatar tsarin radar.
5. Tsarin da ke Juriya da Radiation
Juriyar da 4H-SiC ke da ita ga lalacewar radiation ya sa ya zama dole a cikin mawuyacin yanayi kamar:
Kayan aikin binciken sararin samaniya.
Kayan aikin sa ido kan tashar samar da wutar lantarki ta nukiliya.
Kayan lantarki na soja.
6. Fasaha Mai tasowa
Yayin da fasahar SiC ke ci gaba, aikace-aikacenta suna ci gaba da girma zuwa fannoni kamar:
Binciken Photonics da Kwamfuta na Kwantum.
Ƙirƙirar na'urori masu ƙarfin LED da na'urori masu auna UV.
Haɗawa cikin tsarin semiconductor mai faɗi-bandgap.
Fa'idodin Ingot 4H-SiC
Tsarkakakken Tsafta: An ƙera shi a ƙarƙashin yanayi mai tsauri don rage ƙazanta da yawan lahani.
Ƙarfin Ma'auni: Akwai shi a diamita na inci 4 da inci 6 don tallafawa buƙatun masana'antu da sikelin bincike.
Sauƙin Amfani: Mai dacewa da nau'ikan doping daban-daban da kuma yanayin da za a bi don biyan takamaiman buƙatun aikace-aikacen.
Aiki Mai Karfi: Ingantaccen kwanciyar hankali na zafi da na inji a ƙarƙashin matsanancin yanayin aiki.
Kammalawa
Injin 4H-SiC, tare da kyawawan halaye da aikace-aikacensa masu faɗi, yana kan gaba a cikin ƙirƙirar kayayyaki don na'urorin lantarki da optoelectronics na zamani. Ko dai ana amfani da shi don binciken ilimi, ƙirar masana'antu, ko kera na'urori na zamani, waɗannan injinan suna samar da dandamali mai aminci don tura iyakokin fasaha. Tare da girma dabam dabam, doping, da alkibla, injinan 4H-SiC an tsara su don biyan buƙatun masana'antar semiconductor masu tasowa.
Idan kuna sha'awar ƙarin koyo ko yin oda, da fatan za ku iya tuntuɓar mu don cikakkun bayanai da shawarwari kan fasaha.
Cikakken Zane
