SiC Ingot 4H nau'in Dia 4inch 6inch Kauri 5-10mm Bincike / Dummy Grade

SiC Ingot 4H nau'in Dia 4inch 6inch Kauri 5-10mm Bincike / Hoton da aka Fitar da Grade

Takaitaccen Bayani:

Silicon Carbide (SiC) ya fito a matsayin mabuɗin abu a cikin ingantattun kayan lantarki da aikace-aikacen optoelectronic saboda ingantaccen kayan lantarki, thermal, da injuna. 4H-SiC Ingot, samuwa a cikin diamita na 4-inch da 6-inch tare da kauri na 5-10 mm, samfuri ne na tushe don dalilai na bincike da haɓakawa ko azaman kayan ƙima. An ƙera wannan ingot don samar da masu bincike da masana'anta tare da sinadarai masu inganci na SiC waɗanda suka dace da ƙirƙira na'ura, nazarin gwaji, ko daidaitawa da hanyoyin gwaji. Tare da keɓaɓɓen tsarin lu'ulu'u na hexagonal, 4H-SiC ingot yana ba da fa'ida sosai a cikin kayan lantarki, na'urori masu tsayi, da tsarin juriya.

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Cikakken Bayani

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Kayayyaki

1. Crystal Structure da Orientation
Polytype: 4H (tsarin hexagonal)
Lattice Constant:
a = 3.073 Å
c = 10.053 Å
Gabatarwa: Yawanci [0001] (C-plane), amma ana samun sauran hanyoyin kamar [11\overline{2}0] (A-jirgin sama) akan buƙata.

2. Girman Jiki
Diamita:
Madaidaitan zaɓuɓɓuka: 4 inci (100 mm) da 6 inci (150 mm)
Kauri:
Akwai a cikin kewayon 5-10 mm, wanda za'a iya daidaita shi dangane da buƙatun aikace-aikacen.

3. Abubuwan Lantarki
Nau'in Doping: Akwai shi cikin intrinsic (Semi-insulating), nau'in n-type (doped with nitrogen), ko p-type (doped with aluminum or boron).

4. Thermal da Mechanical Properties
Ƙarfin Ƙarfafawa: 3.5-4.9 W / cm · K a dakin da zafin jiki, yana ba da damar haɓaka zafi mai kyau.
Hardness: Mohs sikelin 9, yin SiC na biyu kawai zuwa lu'u-lu'u a cikin taurin.

Siga	Cikakkun bayanai	Naúrar
Hanyar Girma	PVT (Tsarin Turin Jiki)
Diamita	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Polytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Hannun saman	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (wasu)	digiri
Nau'in	Nau'in N
Kauri	5-10 / 10-15 / >15	mm
Hannun Filayen Firamare	(10-10) ± 5.0˚	digiri
Tsawon Fitowa na Farko	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Gabatarwar Flat na Sakandare	90˚ CCW daga fuskantarwa ± 5.0˚	digiri
Tsawon Lantarki na Sakandare	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Babu (150 mm)	mm
Daraja	Bincike / Dummy

Aikace-aikace

1. Bincike da Ci gaba

Matsayin bincike na 4H-SiC ingot ya dace don dakunan gwaje-gwaje na ilimi da masana'antu da aka mayar da hankali kan haɓaka tushen na'urar ta SiC. Babban ingancinsa na crystalline yana ba da damar gwaji daidai akan kaddarorin SiC, kamar:
Nazarin motsi mai ɗaukar kaya.
Ƙirƙirar ƙima da dabarun rage girman.
Inganta hanyoyin haɓakar epitaxial.

2. Dummy Substrate
Ana amfani da ingot ɗin dummy-grade sosai a cikin gwaji, daidaitawa, da aikace-aikacen samfuri. Madadi ne mai inganci don:
Tsari daidaitaccen ma'auni a cikin Jigilar Turin Sinadarai (CVD) ko Jiki Turin Jiki (PVD).
Ƙimar etching da polishing matakai a masana'antu muhallin.

3. Wutar Lantarki
Saboda faffadan bandejinsa da haɓakar yanayin zafi, 4H-SiC ginshiƙi ne ga kayan lantarki, kamar:
MOSFET masu ƙarfi.
Schottky Barrier Diodes (SBDs).
Junction Field-Effect Transistor (JFETs).
Aikace-aikace sun haɗa da inverters na abin hawa na lantarki, inverter na hasken rana, da grid mai wayo.

4. Na'urori masu Maɗaukaki
Maɗaukakin motsi na kayan lantarki da ƙananan asarar ƙarfin ƙarfin abin ya sa ya dace da:
Mitar rediyo (RF) transistor.
Tsarin sadarwa mara waya, gami da ababen more rayuwa na 5G.
Aerospace da aikace-aikacen tsaro na buƙatar tsarin radar.

5. Radiation-Resistant Systems
Juriya na asali na 4H-SiC ga lalacewar radiation ya sa ya zama dole a cikin yanayi mara kyau kamar:
Kayan aikin binciken sararin samaniya.
Kayan aikin sanya ido kan wutar lantarkin nukiliya.
Na'urorin lantarki masu darajar soja.

6. Fasaha masu tasowa
Kamar yadda fasahar SiC ke ci gaba, aikace-aikacen sa na ci gaba da girma zuwa fannoni kamar:
Binciken Photonics da ƙididdigar ƙididdiga.
Haɓaka manyan LEDs da na'urori masu auna firikwensin UV.
Haɗin kai cikin manyan gyare-gyare na semiconductor mai faɗin bandgap.
Fa'idodin 4H-SiC Ingot
Babban Tsafta: An kera shi a ƙarƙashin tsauraran yanayi don rage ƙazanta da ƙarancin lahani.
Siffar ƙira: Akwai a cikin duka diamita 4-inch da 6-inch don tallafawa daidaitattun masana'antu da buƙatun-bincike.
Ƙarfafawa: Daidaituwa da nau'ikan doping iri-iri da daidaitawa don biyan takamaiman buƙatun aikace-aikacen.
Ƙarfafa Ƙarfafawa: Mafi girman zafi da kwanciyar hankali na inji ƙarƙashin matsanancin yanayin aiki.

Kammalawa

Ingot na 4H-SiC, tare da keɓaɓɓen kaddarorin sa da aikace-aikace masu faɗi, yana tsaye a kan gaba na ƙirƙira kayan don kayan lantarki na gaba da na'urorin lantarki. Ko ana amfani da shi don bincike na ilimi, ƙirar masana'antu, ko kera na'urori masu tasowa, waɗannan ingots suna samar da ingantaccen dandamali don tura iyakokin fasaha. Tare da matakan da za a iya daidaita su, doping, da daidaitawa, 4H-SiC ingot an keɓance shi don biyan buƙatun masana'antar semiconductor.
Idan kuna sha'awar ƙarin koyo ko sanya oda, da fatan za a ji daɗi don samun cikakkun bayanai dalla-dalla da shawarwarin fasaha.