Graphite farantin tire na SiC tare da murfin CVD SiC don kayan aiki
Ba wai kawai ana amfani da yumburan silicon carbide a matakin adana fim ɗin siriri ba, kamar epitaxy ko MOCVD, ko kuma a cikin sarrafa wafer, a tsakiyar inda tiren ɗaukar wafer na MOCVD ke fuskantar yanayin ajiyewa, don haka suna da matuƙar juriya ga zafi da tsatsa. Masu ɗaukar sigina masu rufi da SiC suma suna da babban ƙarfin watsa zafi da kuma kyawawan halayen rarraba zafi.
Masu ɗaukar wafer ɗin Silicon Carbide (CVD SiC) masu tsabta don sarrafa Metal Organic Chemical Turare Deposition (MOCVD) mai zafi mai zafi.
Masu ɗaukar wafer CVD SiC masu tsarki sun fi na gargajiya masu ɗaukar wafer da ake amfani da su a wannan tsari, waɗanda aka yi musu graphite kuma an shafa musu wani Layer na CVD SiC. Waɗannan masu ɗaukar wafer masu rufi da aka yi da graphite ba za su iya jure yanayin zafi mai yawa ba (digiri 1100 zuwa 1200 Celsius) da ake buƙata don adana hasken hasken yau na GaN mai haske da shuɗi. Yanayin zafi mai yawa yana sa murfin ya samar da ƙananan ramuka waɗanda sinadarai na tsari ke lalata graphite da ke ƙasa. Sannan ƙwayoyin graphite za su fashe su gurɓata GaN, wanda hakan ke sa a maye gurbin mai ɗaukar wafer mai rufi da aka yi da wafer.
CVD SiC yana da tsarkin kashi 99.999% ko fiye kuma yana da juriyar zafi mai yawa da kuma juriyar girgizar zafi. Saboda haka, yana iya jure yanayin zafi mai yawa da kuma yanayi mai tsauri na kera LED mai haske. Abu ne mai ƙarfi wanda ke kaiwa ga yawan ka'ida, yana samar da ƙananan ƙwayoyin cuta, kuma yana nuna juriyar tsatsa da zaizayewa sosai. Kayan zai iya canza haske da kuma juriyar watsawa ba tare da gabatar da ƙazanta na ƙarfe ba. Masu ɗaukar wafer yawanci suna da diamita na inci 17 kuma suna iya ɗaukar wafers har zuwa inci 40 2-4.
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