SiC yumbu tire graphite tare da CVD SiC shafi don kayan aiki

Silicon carbide tukwane ba kawai amfani a cikin bakin ciki fim mataki mataki, irin su epitaxy ko MOCVD, ko a wafer aiki, a cikin zuciyar wanda wafer m trays for MOCVD aka farko hõre ga jita-jita yanayi, sabili da haka ne sosai resistant zuwa zafi da kuma lalata.SiC-rufi dako kuma suna da high thermal watsin Properties da kyau kwarai thermal watsin Properties.

Tsaftataccen Turin Sinadari na Silicon Carbide (CVD SiC) masu ɗaukar wafer don sarrafa zafin ƙarfe na ƙarfe na sinadari na sinadarai (MOCVD).

Masu ɗaukar wafer na CVD SiC masu tsabta sun fi na yau da kullun da aka yi amfani da su a cikin wannan tsari, waɗanda suke graphite kuma an lulluɓe su da Layer na CVD SiC. waɗannan masu ɗaukar hoto masu rufi ba za su iya jure yanayin zafi mai girma (digiri 1100 zuwa 1200 Celsius) da ake buƙata don shigar da GaN na babban haske mai shuɗi da fari na yau. Babban yanayin zafi yana haifar da ruɓi don samar da ƙananan ramuka masu yawa ta hanyar da sinadarai ke lalata graphite a ƙasa. Ƙaƙƙarfan faifan faifan daga nan sai su ɓalle su gurɓata GaN, suna haifar da maye gurbin mai ɗaukar wafer.

CVD SiC yana da tsaftar 99.999% ko fiye kuma yana da haɓakar zafin jiki mai ƙarfi da juriya na zafin zafi. Sabili da haka, yana iya jure yanayin zafi mai zafi da matsanancin yanayi na masana'antar LED mai haske mai haske. Yana da wani m monolithic abu wanda ya kai ka'idar yawa yawa, samar da kadan barbashi, da kuma nuna sosai high lalata da yashwa juriya. Kayan na iya canza bayyananniyar sarari da aiki ba tare da gabatar da ƙazantattun ƙarfe ba. Masu ɗaukar wafer yawanci inci 17 ne a diamita kuma suna iya riƙe har zuwa 40 2-4 wafers.