Tiren Ceramic na SiC don Mai ɗaukar Wafer tare da Juriyar Zazzabi Mai Girma
Tiren Ceramic na Silicon Carbide (Tiren SiC)
Wani sinadari mai aiki sosai wanda aka gina shi da silicon carbide (SiC), wanda aka ƙera shi don ci gaba da aikace-aikacen masana'antu kamar kera semiconductor da samar da LED. Babban aikinsa ya haɗa da yin aiki a matsayin mai ɗaukar wafer, dandamalin tsarin etching, ko tallafin tsarin zafi mai yawa, amfani da ingantaccen yanayin zafi, juriya ga zafin jiki mai yawa, da kwanciyar hankali na sinadarai don tabbatar da daidaiton tsari da yawan amfanin samfur.
Muhimman Sifofi
1. Aikin Zafi
- Babban Watsawar Zafi: 140–300 W/m·K, wanda ya zarce graphite na gargajiya (85 W/m·K), wanda ke ba da damar watsar da zafi cikin sauri da kuma rage damuwa ta zafi.
- Ƙarancin Faɗaɗawar Zafi: 4.0×10⁻⁶/℃ (25–1000℃), silicon mai dacewa sosai (2.6×10⁻⁶/℃), yana rage haɗarin lalacewar zafi.
2. Kayan aikin injiniya
- Babban Ƙarfi: Ƙarfin lanƙwasa ≥320 MPa (20℃), mai jure wa matsi da tasiri.
- Babban Tauri: Taurin Mohs 9.5, na biyu bayan lu'u-lu'u, yana ba da juriya mai kyau ga lalacewa.
3. Daidaiton Sinadarai
- Juriyar Tsatsa: Yana jure wa acid mai ƙarfi (misali, HF, H₂SO₄), wanda ya dace da yanayin aikin ƙwanƙwasa.
- Ba Mai Magnetic ba: Mai saurin kamuwa da maganadisu <1×10⁻⁶ emu/g, yana guje wa tsangwama ga kayan aikin da suka dace.
4. Juriyar Muhalli Mai Tsanani
- Dorewa Mai Girma: Zafin aiki na dogon lokaci har zuwa 1600-1900℃; juriya na ɗan gajeren lokaci har zuwa 2200℃ (muhalli mara iskar oxygen).
- Juriyar Girgizar Zafi: Yana jure canje-canjen zafin jiki kwatsam (ΔT > 1000℃) ba tare da fashewa ba.
Aikace-aikace
| Filin Aikace-aikacen | Takamaiman Yanayi | Darajar Fasaha |
| Masana'antar Semiconductor | Wafer etching (ICP), siraran fim (MOCVD), CMP polishing | Babban ƙarfin lantarki na thermal yana tabbatar da yanayin zafi iri ɗaya; ƙarancin faɗaɗa zafi yana rage yaɗuwar wafer. |
| Samar da LED | Girman epitaxial (misali, GaN), yanke wafer, marufi | Yana rage lahani iri-iri, yana haɓaka ingancin hasken LED da tsawon rai. |
| Masana'antar Photovoltaic | Tanderun sintering na silicon wafer, tallafin kayan aikin PECVD | Yawan zafin jiki da juriya ga girgizar zafi suna tsawaita tsawon rayuwar kayan aiki. |
| Laser da Na'urorin gani | Manyan abubuwan sanyaya laser masu ƙarfi, tallafin tsarin gani | Babban ƙarfin zafi yana ba da damar watsa zafi cikin sauri, yana daidaita abubuwan gani. |
| Kayan Aikin Nazari | Masu riƙe samfurin TGA/DSC | Ƙarancin ƙarfin zafi da kuma saurin amsawar zafi suna inganta daidaiton aunawa. |
Fa'idodin Samfura
- Cikakken Aiki: Tsarin watsa zafi, ƙarfi, da juriya ga tsatsa sun fi yumbun alumina da silicon nitride nesa ba kusa ba, suna biyan buƙatun aiki mai tsanani.
- Tsarin Mai Sauƙi: Yawan 3.1–3.2 g/cm³ (40% na ƙarfe), yana rage nauyin inertial da kuma inganta daidaiton motsi.
- Tsawon Lokaci & Aminci: Rayuwar sabis ta wuce shekaru 5 a 1600 ℃, rage lokacin aiki da rage farashin aiki da kashi 30%.
- Keɓancewa: Yana tallafawa siffofi masu rikitarwa (misali, kofunan tsotsa masu ramuka, tiren yadudduka da yawa) tare da kuskuren fid da ƙasa da μm don aikace-aikacen daidaito.
Bayanan Fasaha
| Nau'in Sigogi | Mai nuna alama |
| Kayayyakin Jiki | |
| Yawan yawa | ≥3.10 g/cm³ |
| Ƙarfin Lankwasawa (20℃) | 320–410 MPa |
| Tsarin kwararar zafi (20℃) | 140–300 W/(m·K) |
| Faɗaɗa Ma'aunin Zafi (25–1000℃) | 4.0×10⁻⁶/℃ |
| Sifofin Sinadarai | |
| Juriyar Acid (HF/H₂SO₄) | Babu tsatsa bayan nutsewa awanni 24 |
| Daidaiton Injin | |
| Faɗi | ≤15 μm (300 × 300 mm) |
| Taurin saman (Ra) | ≤0.4 μm |
Ayyukan XKH
XKH tana ba da cikakkun hanyoyin samar da mafita na masana'antu waɗanda suka shafi haɓaka keɓancewar musamman, sarrafa daidai, da kuma kula da inganci mai tsauri. Don haɓaka keɓancewar musamman, tana ba da mafi kyawun tsabta (>99.999%) da mafita mai ramuka (30-50% porosity), tare da ƙirar 3D da kwaikwayon ƙira don inganta geometrics masu rikitarwa don aikace-aikace kamar semiconductors da sararin samaniya. Injin gyara daidai yana bin tsari mai sauƙi: sarrafa foda → isostatic/dried pressing → 2200°C sintering → CNC/lu'u-lu'u niƙa → dubawa, tabbatar da goge matakin nanometer da haƙurin girma ±0.01 mm. Kula da inganci ya haɗa da gwajin cikakken tsari (haɗakar XRD, tsarin SEM, lanƙwasa maki 3) da tallafin fasaha (haɓaka tsari, shawarwari 24/7, isar da samfuri na awanni 48), isar da ingantattun kayan aiki masu inganci don buƙatun masana'antu na ci gaba.
Tambayoyin da Ake Yawan Yi (FAQ)
1. Tambaya: Waɗanne masana'antu ne ke amfani da tiren yumbu na silicon carbide?
A: Ana amfani da shi sosai a masana'antar semiconductor (manna wafer), makamashin rana (tsarin PECVD), kayan aikin likita (kayan MRI), da sararin samaniya (sassan zafin jiki mai yawa) saboda juriyarsu ga zafi mai tsanani da kuma daidaiton sinadarai.
2. T: Ta yaya silicon carbide ya fi kyau fiye da tiren quartz/gilashi?
A: Mafi girman juriya ga girgizar zafi (har zuwa 1800°C idan aka kwatanta da 1 ...
3. T: Shin tiren silicon carbide zai iya jure yanayin acidic?
A: Eh. Yana jure wa HF, H2SO4, da NaOH tare da tsatsa <0.01mm/shekara, wanda hakan ya sa suka dace da goge sinadarai da kuma tsaftace wafer.
4. Tambaya: Shin tiren silicon carbide sun dace da sarrafa kansa?
A: Eh. An ƙera shi don ɗaukar injinan iska da sarrafa injin robot, tare da faɗin saman <0.01mm don hana gurɓatar ƙwayoyin cuta a cikin injinan sarrafa kansa.
5. T: Menene kwatancen farashi idan aka kwatanta da kayan gargajiya?
A: Farashin farko ya fi girma (kusan 3-5x) amma kashi 30-50% na TCO ya ragu saboda tsawaita rayuwa, raguwar lokacin aiki, da kuma tanadin makamashi daga ingantaccen watsa wutar lantarki.
