Tire na yumbu na SiC na yumbu kofunan tsotsa na yumbu daidai gwargwado na musamman
Sifofin kayan aiki:
1. Babban tauri: Taurin Mohs na silicon carbide shine 9.2-9.5, na biyu bayan lu'u-lu'u, tare da juriyar lalacewa mai ƙarfi.
2. Babban ƙarfin lantarki na zafi: ƙarfin lantarki na silicon carbide yana da girman 120-200 W/m·K, wanda zai iya wargaza zafi da sauri kuma ya dace da yanayin zafi mai yawa.
3. Ƙaramin ma'aunin faɗaɗa zafi: ma'aunin faɗaɗa zafi na silicon carbide yana da ƙasa (4.0-4.5×10⁻⁶/K), har yanzu yana iya kiyaye daidaiton girma a babban zafin jiki.
4. Daidaiton sinadarai: sinadarin silicon carbide acid da juriya ga lalata alkali, wanda ya dace da amfani a muhallin lalata sinadarai.
5. Babban ƙarfin injina: silicon carbide yana da ƙarfin lanƙwasawa mai yawa da ƙarfin matsi, kuma yana iya jure babban matsin lamba na injina.
Siffofi:
1. A cikin masana'antar semiconductor, ana buƙatar sanya wafers masu siriri sosai a kan kofin tsotsar injin, ana amfani da tsotsar injin don gyara wafers ɗin, kuma ana yin aikin shafa man, rage kiba, tsaftacewa, da yankewa akan wafers ɗin.
2. Mai tsotsar silikon carbide yana da kyakkyawan yanayin zafi, yana iya rage lokacin yin kakin zuma da kakin zuma yadda ya kamata, yana inganta ingancin samarwa.
3. Injin tsotsar silikon carbide shima yana da kyakkyawan juriya ga lalata acid da alkali.
4. Idan aka kwatanta da farantin ɗaukar kaya na gargajiya na corundum, yana rage lokacin ɗumamawa da sanyaya kaya, yana inganta aikin da kyau; A lokaci guda, yana iya rage lalacewa tsakanin faranti na sama da na ƙasa, yana kiyaye daidaiton jirgin sama mai kyau, da kuma tsawaita rayuwar sabis da kusan kashi 40%.
5. Kason kayan yana da ƙanƙanta, nauyi mai sauƙi. Yana da sauƙi ga masu aiki su ɗauki fale-falen kaya, wanda ke rage haɗarin haɗarin karo da matsalolin sufuri ke haifarwa da kusan kashi 20%.
6. Girman: matsakaicin diamita 640mm; Faɗi: 3um ko ƙasa da haka
Filin aikace-aikacen:
1. Kera semiconductor
● Sarrafa Wafer:
Don daidaita wafer a cikin photolithography, etching, siraran fim da sauran hanyoyin aiki, tabbatar da daidaito mai girma da daidaiton tsari. Babban zafinsa da juriyarsa ga tsatsa ya dace da yanayin masana'antar semiconductor mai tsauri.
●Ci gaban Epitaxial:
A cikin ci gaban SiC ko GaN, a matsayin mai ɗaukar zafi da gyara wafers, tabbatar da daidaiton zafin jiki da ingancin lu'ulu'u a yanayin zafi mai yawa, inganta aikin na'urar.
2. Kayan aikin daukar hoto
● Masana'antar LED:
Ana amfani da shi don gyara sapphire ko SiC substrate, kuma azaman mai ɗaukar zafi a cikin tsarin MOCVD, don tabbatar da daidaiton ci gaban epitaxial, inganta inganci da inganci mai haske na LED.
●Diode na Laser:
A matsayin babban kayan aiki mai inganci, gyarawa da dumama substrate don tabbatar da kwanciyar hankali na zafin aiki, inganta ƙarfin fitarwa da amincin diode na laser.
3. Injin gyara daidai
● Sarrafa kayan gani:
Ana amfani da shi don gyara daidaiton abubuwan da aka gyara kamar ruwan tabarau na gani da matattara don tabbatar da daidaito mai kyau da ƙarancin gurɓatawa yayin sarrafawa, kuma ya dace da injinan aiki mai ƙarfi.
● Sarrafa yumbu:
A matsayin kayan aiki mai ƙarfi, ya dace da sarrafa kayan yumbu daidai don tabbatar da daidaito da daidaiton injina a ƙarƙashin yanayin zafi mai yawa da gurɓataccen yanayi.
4. Gwaje-gwajen kimiyya
● Gwajin zafin jiki mai yawa:
A matsayin na'urar gyara samfurin a cikin yanayin zafi mai yawa, tana tallafawa gwaje-gwajen zafin jiki mai tsanani sama da 1600°C don tabbatar da daidaiton zafin jiki da kwanciyar hankali na samfurin.
●Gwajin injin tsotsa:
A matsayin samfurin gyarawa da dumama a cikin yanayin injin, don tabbatar da daidaito da maimaita gwajin, wanda ya dace da murfin injin da maganin zafi.
Bayanan fasaha:
| (Kayan aiki) | (Naúrar) | (ssic) | |
| (Abubuwan da ke cikin SiC) |
| (Wt)% | >99 |
| (Matsakaicin girman hatsi) |
| micron | 4-10 |
| (Yawa) |
| kg/dm3 | >3.14 |
| (A bayyane yake cewa akwai ramuka) |
| Vo1% | <0.5 |
| (Taurin Vickers) | HV 0.5 | GPA | 28 |
| *( Ƙarfin lankwasawa) | 20ºC | MPa | 450 |
| (Ƙarfin matsi) | 20ºC | MPa | 3900 |
| (Modulus mai sassauƙa) | 20ºC | GPA | 420 |
| (Turi na karaya) |
| MPa/m'% | 3.5 |
| (Mai jure zafi) | 20°C | W/(m*K) | 160 |
| (Juriya) | 20°C | Ohm.cm | 106-108 |
|
| a(RT**...80ºC) | K-1*10-6 | 4.3 |
|
|
| oºC | 1700 |
Tare da shekaru da yawa na tarin fasaha da ƙwarewar masana'antu, XKH tana iya daidaita mahimman sigogi kamar girman, hanyar dumama da ƙirar shaye-shaye na injin cikawa bisa ga takamaiman buƙatun abokin ciniki, yana tabbatar da cewa samfurin ya dace da tsarin abokin ciniki. SiC silicon carbide yumbu chucks sun zama abubuwan da ba makawa a cikin sarrafa wafer, haɓakar epitaxial da sauran mahimman hanyoyin saboda kyakkyawan tasirin zafi, kwanciyar hankali mai yawa da kwanciyar hankali na sinadarai. Musamman a cikin kera kayan semiconductor na ƙarni na uku kamar SiC da GaN, buƙatar chucks na silicon carbide yumbu yana ci gaba da ƙaruwa. A nan gaba, tare da saurin haɓaka 5G, motocin lantarki, basirar wucin gadi da sauran fasahohi, yuwuwar amfani da chucks na silicon carbide yumbu a masana'antar semiconductor zai zama faɗaɗa.
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