Kayayyaki
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Hanyar sarrafa saman na sandunan Laser-doped sapphire crystal
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8inch 200mm Silicon Carbide SiC Wafers 4H-N nau'in Samar da darajar 500um kauri
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2 inch 6H-N Silicon Carbide Substrate Sic Wafer Biyu Goyan bayan Babban Matsayin Matsayi
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200mm 8inch GaN akan sapphire Epi-Layer wafer substrate
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Hanyar Sapphire tube KY duk abin da za'a iya gyarawa
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6 inch Conductive SiC Composite Substrate 4H Diamita 150mm Ra≤0.2nm Warp≤35μm
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Infrared Nanosecond Laser Drilling kayan aikin don Gilashin hakowa kauri≤20mm
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Microjet Laser fasahar kayan aiki wafer yankan SiC kayan aiki
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Silicon carbide lu'u-lu'u yankan na'ura 4/6/8/12 inch SiC ingot aiki
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Hanyar CVD don samar da manyan kayan albarkatun SiC masu tsabta a cikin tanderun carbon carbide a 1600 ℃
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Silicon carbide juriya dogon kristal makera girma 6/8/12 inch SiC ingot crystal PVT Hanyar
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Biyu tashar square inji monocrystalline silicon sanda sarrafa 6/8/12 inch surface flatness Ra≤0.5μm