Kayayyaki
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Samfurin AlN akan FSS 2in 4in NPSS/FSS na yankin semiconductor
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Gallium Nitride (GaN) Epitaxial Girma akan Sapphire Wafers 4 inci 6 don MEMS
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Gallium Nitride akan Silicon Wafer 4 inci 6 Mai Tsarin Si Substrate, Juriya, da Zaɓuɓɓukan N-type/P
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Wafers na Epitaxial na GaN-on-SiC na Musamman (100mm, 150mm) – Zaɓuɓɓukan Substrate na SiC da yawa (4H-N, HPSI, 4H/6H-P)
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Wafers ɗin GaN-on-Diamond mai inci 4 da inci 6 Jimlar kauri na epi (micron) 0.6 ~ 2.5 ko an keɓance shi don aikace-aikacen Mita Mai Yawa
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Akwatin ɗaukar wafer na FOSB ramuka 25 don wafer mai inci 12 Tazara madaidaiciya don ayyukan atomatik Kayan aiki masu tsafta sosai
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Inci 12 (300mm) Jigilar kaya ta gaba Akwatin jigilar kaya na FOSB Akwatin ɗaukar kaya na wafer mai girman inci 25 don sarrafa wafer da jigilar kaya Ayyukan atomatik
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Gilashin Silicon (Si) na Monocrystalline - Girman da aka keɓance don Optoelectronics da Hoton Infrared
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Gilashin Silikon Silikon Silikon Silikon Silikon Silikon Silikon Silikon Silikon Tsarkakakke – Girman da aka ƙera da Rufi don Aikace-aikacen Infrared da THZ (1.2-7µm, 8-12µm)
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Tagar gani ta musamman ta Sapphire, Al2O3 Guda ɗaya, Tsabta, Diamita 45mm, Kauri 10mm, Yanke Laser da Gogewa
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Tagar Mataki Mai Kyau Ta Sapphire, Al2O3 Guda ɗaya, Mai Rufi Mai Faɗi, Siffofi da Girman da Aka Keɓance don Aikace-aikacen Haske Mai Daidaito
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Babban Filin Ɗaga Sapphire, Tsarkakken Al2O3 Crystal guda ɗaya don Tsarin Canja Wafer - Girman Musamman, Babban Dorewa don Aikace-aikacen Daidaitacce