P-type SiC substrate SiC wafer Dia2inch sabon samfur

P-nau'in SiC substrate SiC wafer Dia2inch sabon samfur Featured Hoton

Takaitaccen Bayani:

2 inch P-Type Silicon Carbide (SiC) Wafer a ko dai 4H ko 6H polytype. Yana da irin wannan kaddarorin kamar N-type Silicon Carbide (SiC) wafer, kamar babban juriya na zafin jiki, high thermal conductivity, high electric conductivity, da dai sauransu. P-type SiC substrate ana amfani dashi gabaɗaya don kera na'urorin wutar lantarki, musamman masana'antar Insulated. Ƙofar Bipolar Transistor (IGBT). Ƙirar IGBT sau da yawa ya ƙunshi haɗin PN, inda nau'in P-type SiC zai iya zama mai fa'ida don sarrafa halayen na'urorin.

Aika mana imel

Cikakken Bayani

Tags samfurin

P-type silicon carbide substrates ana amfani da su don kera na'urorin wuta, kamar Insulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, wanda ke kashewa. MOSFET = IGFET (karfe oxide semiconductor filin sakamako bututu, ko mai rufi nau'in filin tasirin tasirin transistor). BJT (Bipolar Junction Transistor, wanda kuma aka sani da transistor), bipolar yana nufin cewa akwai nau'ikan lantarki guda biyu da masu ɗaukar rami da ke cikin tsarin gudanarwa a wurin aiki, gabaɗaya akwai haɗin PN da ke cikin gudanarwa.

2-inch p-type silicon carbide (SiC) wafer yana cikin nau'in 4H ko 6H. Yana da irin wannan kaddarorin zuwa wafers na silicon carbide (SiC), irin su babban juriya na zafin jiki, haɓakar yanayin zafi, da ƙarfin wutar lantarki. P-type SiC substrates ana yawan amfani da su wajen ƙirƙira na'urorin wuta, musamman don ƙirƙira na insulated-gate bipolar transistors (IGBTs). ƙirar IGBT yawanci ta ƙunshi haɗin PN, inda nau'in p-type SiC ke da fa'ida don sarrafa halayen na'urar.