Sabuwar samfurin SiC wafer Dia2inch mai nau'in P-type

Ana amfani da nau'in P-type silicon carbide substrates don ƙera na'urorin wutar lantarki, kamar su Insulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, wanda shine maɓallin kunnawa. MOSFET=IGFET (bututun tasirin filin semiconductor na ƙarfe, ko transistor na tasirin filin ƙofa mai rufi). BJT (Transistor na Bipolar Junction, wanda aka fi sani da transistor), bipolar yana nufin cewa akwai nau'ikan lantarki da masu ɗaukar ramuka guda biyu da ke da hannu a cikin aikin isar da sako, gabaɗaya akwai mahadar PN da ke da hannu a isar da sako.

Wafer ɗin silicon carbide mai inci 2 (SiC) yana cikin nau'in polytype 4H ko 6H. Yana da kama da wafers ɗin silicon carbide (SiC) na n-type, kamar juriya ga zafin jiki mai yawa, ƙarfin wutar lantarki mai yawa, da kuma ƙarfin lantarki mai yawa. Ana amfani da substrates na SiC na p-type wajen ƙera na'urorin wutar lantarki, musamman don ƙera transistor masu rufin asiri (IGBTs). Tsarin IGBTs yawanci ya ƙunshi mahaɗar PN, inda SiC na p-type ya fi dacewa don sarrafa halayen na'urar.