Gabatarwa ga silicon carbide
Silicon carbide (SiC) wani abu ne na semiconductor wanda ya ƙunshi carbon da silicon, wanda shine ɗayan ingantattun kayan don yin babban zafin jiki, mitar mita, babban iko da na'urori masu ƙarfin lantarki.Idan aka kwatanta da kayan siliki na gargajiya (Si), tazarar bandeji na silicon carbide ya ninka na silicon sau 3.Matsakaicin zafin jiki shine sau 4-5 na silicon;Rashin wutar lantarki shine sau 8-10 na silicon;Matsakaicin drift na lantarki shine sau 2-3 na silicon, wanda ke biyan bukatun masana'antar zamani don babban iko, babban ƙarfin lantarki da mitar mita.Ana amfani da shi ne musamman don samar da na'urorin lantarki masu sauri, mai ƙarfi, ƙarfi da haske.Filin aikace-aikacen da ke ƙasa sun haɗa da grid mai kaifin baki, sabbin motocin makamashi, ƙarfin iska na hotovoltaic, sadarwar 5G, da sauransu. Silicon carbide diodes da MOSFETs an yi amfani da su ta kasuwanci.
High zafin jiki juriya.The band rata nisa na silicon carbide ne 2-3 sau na silicon, da electrons ba sauki don canzawa a high yanayin zafi, da kuma iya jure mafi girma aiki yanayin zafi, da thermal conductivity na silicon carbide ne 4-5 sau na silicon. yin zafi da zafi na na'urar cikin sauƙi da iyakar zafin aiki mafi girma.Babban juriya na zafin jiki na iya ƙara ƙarfin ƙarfin ƙarfi yayin da rage buƙatun akan tsarin sanyaya, yana sa tashar ta zama mai sauƙi da ƙarami.
Jurewa babban matsin lamba.Ƙarfin filin lantarki na silicon carbide ya ninka sau 10 na silicon, wanda zai iya jure wa mafi girman ƙarfin lantarki kuma ya fi dacewa da na'urori masu ƙarfin lantarki.
Babban juriya.Silicon carbide yana da madaidaicin drift na lantarki sau biyu na silicon, wanda ke haifar da rashin wutsiya na yanzu yayin aikin rufewa, wanda zai iya inganta saurin sauyawa na na'urar yadda ya kamata kuma ya gane ƙarancin na'urar.
Ƙananan asarar makamashi.Idan aka kwatanta da kayan silicon, silicon carbide yana da ƙarancin juriya da ƙarancin hasara.A lokaci guda, babban band-gizon nisa na silicon carbide yana rage yawan zubewar yanzu da asarar wutar lantarki.Bugu da kari, na'urar siliki carbide ba ta da abin da zai biyo baya a halin yanzu yayin aikin rufewa, kuma asarar canzawa ta yi ƙasa.
Silicon carbide sarkar masana'antu
Ya fi haɗa da substrate, epitaxy, ƙirar na'urar, masana'anta, rufewa da sauransu.Silicon carbide daga kayan zuwa na'urar wutar lantarki na semiconductor zai sami ci gaban kristal guda ɗaya, yankan ingot, haɓaka epitaxial, ƙirar wafer, masana'anta, marufi da sauran matakai.Bayan haɗin siliki carbide foda, an fara yin ingot silicon carbide, sa'an nan kuma ana samun silin carbide substrate ta hanyar slicing, niƙa da gogewa, kuma ana samun takardar epitaxial ta haɓakar epitaxial.Wafer epitaxial an yi shi da siliki carbide ta hanyar lithography, etching, ion implantation, passivation karfe da sauran matakai, an yanke wafer a cikin mutu, an tattara na'urar, an haɗa na'urar zuwa harsashi na musamman kuma an haɗa shi cikin tsari.
Sama na sarkar masana'antu 1: substrate - ci gaban kristal shine babban hanyar haɗin yanar gizo
Silicon carbide Substrate yana lissafin kusan kashi 47% na farashin na'urorin siliki carbide, mafi girman shingen fasaha na masana'antu, mafi girman ƙima, shine tushen ci gaban manyan masana'antu na SiC na gaba.
Daga hangen nesa na electrochemical bambance-bambancen dukiya, silicon carbide substrate kayan za a iya raba zuwa conductive substrates (resistivity yankin 15 ~ 30mΩ · cm) da Semi-insulated substrates (resistivity sama da 105Ω · cm).Ana amfani da waɗannan nau'ikan nau'ikan nau'ikan abubuwa guda biyu don kera na'urori masu hankali kamar na'urorin wuta da na'urorin mitar rediyo bi da bi bayan haɓakar epitaxial.Daga cikin su, siliki carbide substrate Semi-insulated an fi amfani dashi a cikin kera na'urorin gallium nitride RF, na'urorin lantarki da sauransu.Ta hanyar girma gan epitaxial Layer a kan rabin-insulated SIC substrate, sic epitaxial farantin an shirya, wanda za a iya kara shirya cikin HEMT gan iso-nitride RF na'urorin.Abubuwan da ake amfani da su na silicon carbide ana amfani da su musamman wajen kera na'urorin wuta.Daban-daban da tsarin kera na'urar wutar lantarki ta gargajiya ta gargajiya, na'urar wutar lantarki ta silicon carbide ba za a iya yin ta kai tsaye a kan siliki carbide substrate, da silicon carbide epitaxial Layer yana buƙatar girma a kan madaidaicin madaidaicin don samun takardar siliki carbide epitaxial, da epitaxial. Layer ana kera shi akan diode Schottky, MOSFET, IGBT da sauran na'urorin wuta.
Silicon carbide foda aka hada daga high tsarki carbon foda da high tsarki silicon foda, da kuma daban-daban masu girma dabam na silicon carbide ingot aka girma a karkashin musamman zazzabi filin, sa'an nan silicon carbide substrate aka samar ta da yawa aiki matakai.Babban tsari ya haɗa da:
Raw material kira: The high-tsarki silicon foda + toner ne gauraye bisa ga dabara, da kuma dauki da za'ayi a cikin dauki dakin karkashin yanayin zafi sama da 2000 ° C don hada da silicon carbide barbashi tare da takamaiman crystal irin da barbashi. girman.Sa'an nan kuma ta hanyar murkushewa, nunawa, tsaftacewa da sauran matakai, don saduwa da buƙatun kayan albarkatun foda mai tsabta na silicon carbide.
Girman kristal shine ainihin tsari na masana'anta na silicon carbide, wanda ke ƙayyade kaddarorin lantarki na silin carbide substrate.A halin yanzu, manyan hanyoyin haɓakar kristal sune canja wurin tururi ta jiki (PVT), ƙimar tururin sinadarai mai zafin jiki (HT-CVD) da epitaxy na ruwa (LPE).Daga cikin su, hanyar PVT ita ce hanyar da ta fi dacewa don haɓaka kasuwanci na SiC substrate a halin yanzu, tare da mafi girma na fasaha da kuma mafi yawan amfani da aikin injiniya.
Shirye-shiryen SiC substrate yana da wahala, yana haifar da farashinsa mai girma
Zazzabi filin kula da yana da wahala: Si crystal sanda girma kawai bukatar 1500 ℃, yayin da SiC crystal sanda bukatar da za a girma a wani babban zafin jiki sama da 2000 ℃, kuma akwai fiye da 250 SiC isomers, amma babban 4H-SiC guda crystal tsarin ga samar da na'urorin wuta, idan ba daidaitaccen iko ba, zai sami wasu sifofi na crystal.Bugu da kari, da zafin jiki gradient a cikin crucible kayyade kudi na SiC sublimation canja wurin da tsari da kuma girma yanayin gaseous atom a kan crystal dubawa, wanda rinjayar da crystal girma kudi da kuma crystal quality, don haka shi wajibi ne don samar da tsarin zafin jiki filin. fasahar sarrafawa.Idan aka kwatanta da kayan Si, bambanci a cikin samar da SiC kuma yana cikin matakan zafin jiki mai girma kamar haɓakar ion zafin jiki mai zafi, yawan zafin jiki mai zafi, kunna zafin jiki mai zafi, da tsarin mashin wuyar da ake buƙata ta waɗannan matakan zafin jiki.
Slow crystal girma: girma kudi na Si crystal sanda iya isa 30 ~ 150mm / h, da kuma samar da 1-3m silicon crystal sanda kawai daukan game da 1 rana;SiC crystal sanda tare da hanyar PVT a matsayin misali, girman girma shine game da 0.2-0.4mm / h, kwanaki 7 don girma ƙasa da 3-6cm, ƙimar girma ya kasance ƙasa da 1% na kayan silicon, ƙarfin samarwa yana da yawa. iyakance.
High samfurin sigogi da low yawan amfanin ƙasa: core sigogi na SiC substrate sun hada da microtubule yawa, dislocation yawa, resistivity, warpage, surface roughness, da dai sauransu Yana da wani hadadden tsarin injiniya don shirya atom a cikin rufaffiyar high-zazzabi jam'iyya da kuma cikakken crystal girma. yayin sarrafa ma'auni.
Kayan yana da tsayin daka, tsayin daka, dogon lokacin yankewa da lalacewa: SiC Mohs hardness na 9.25 shine na biyu kawai zuwa lu'u-lu'u, wanda ke haifar da haɓakar haɓakar wahalar yankan, niƙa da gogewa, kuma yana ɗaukar kusan awanni 120 zuwa yanke 35-40 guda na ingot mai kauri 3cm.Bugu da kari, saboda babban brittleness na SiC, wafer sarrafa lalacewa zai zama mafi, da fitarwa rabo ne kawai game da 60%.
Yanayin haɓakawa: Girman haɓaka + raguwar farashin
Kasuwar SiC ta duniya layin samar da ƙarar inci 6 yana girma, kuma manyan kamfanoni sun shiga kasuwar inch 8.Ayyukan ci gaban cikin gida sun fi inci 6 ne.A halin yanzu, kodayake yawancin kamfanonin cikin gida har yanzu suna dogara ne akan layukan samar da inci 4, amma a hankali masana'antar tana haɓaka zuwa inci 6, tare da balagaggen fasahar tallafi na inci 6, fasahar substrate na gida ta SiC ita ma sannu a hankali tana haɓaka tattalin arziƙin. Za a nuna sikelin manyan layukan samarwa, kuma gibin lokacin samar da yawan inci 6 na cikin gida na yanzu ya ragu zuwa shekaru 7.Girman wafer mafi girma zai iya haifar da karuwa a cikin adadin kwakwalwan kwamfuta guda ɗaya, inganta yawan amfanin ƙasa, da rage yawan adadin kwakwalwan kwamfuta, kuma za a kiyaye farashin bincike da haɓakawa da asarar amfanin gona a kusan 7%, don haka inganta wafer. amfani.
Har yanzu akwai matsaloli da yawa a ƙirar na'urar
Kasuwancin SiC diode yana haɓaka sannu a hankali, a halin yanzu, yawancin masana'antun cikin gida sun tsara samfuran SiC SBD, matsakaici da matsakaicin ƙarfin lantarki samfuran SiC SBD suna da kwanciyar hankali mai kyau, a cikin motar OBC, amfani da SiC SBD + SI IGBT don cimma kwanciyar hankali. halin yanzu yawa.A halin yanzu, babu wani shinge a cikin ƙirar ƙira ta haƙƙin mallaka na samfuran SiC SBD a cikin Sin, kuma gibin da ke tsakanin kasashen waje ya yi kadan.
SiC MOS har yanzu yana da matsaloli da yawa, har yanzu akwai rata tsakanin SiC MOS da masana'antun ketare, kuma ana kan gina dandamalin masana'anta masu dacewa.A halin yanzu, ST, Infineon, Rohm da sauran 600-1700V SiC MOS sun sami yawan samarwa da sanya hannu da jigilar kayayyaki tare da masana'antun masana'antu da yawa, yayin da ƙirar SiC MOS ta gida ta yanzu ta ƙare, yawancin masana'antun ƙira suna aiki tare da fabs a matakin wafer kwarara, kuma daga baya tabbacin abokin ciniki har yanzu yana buƙatar ɗan lokaci, don haka har yanzu akwai dogon lokaci daga manyan sikelin kasuwanci.
A halin yanzu, tsarin tsari shine zaɓi na al'ada, kuma ana amfani da nau'in mahara sosai a cikin filin matsa lamba a nan gaba.Tsarin Planar SiC MOS masana'antun suna da yawa, tsarin tsarin ba shi da sauƙi don samar da matsalolin rushewar gida idan aka kwatanta da tsagi, yana shafar kwanciyar hankali na aikin, a cikin kasuwa da ke ƙasa 1200V yana da ƙimar aikace-aikacen da yawa, kuma tsarin tsarin yana da ɗanɗano. mai sauƙi a cikin ƙarshen masana'anta, don saduwa da ƙima da sarrafa farashi abubuwa biyu.The tsagi na'urar yana da abũbuwan amfãni na musamman low parasitic inductance, sauri sauyawa gudun, low asara da in mun gwada da high yi.
2--Labarin wafer SiC
Kasuwar Silicon carbide da haɓaka tallace-tallace, kula da rashin daidaituwar tsarin tsakanin wadata da buƙata
Tare da saurin haɓakar buƙatun kasuwa don mitoci mai ƙarfi da ƙarfin lantarki mai ƙarfi, ƙarancin ƙarancin jiki na na'urorin semiconductor na tushen silicon a hankali ya zama sananne, kuma samfuran semiconductor na ƙarni na uku waɗanda silicon carbide (SiC) ke wakilta a hankali sun kasance a hankali. zama masana'antu.Daga ra'ayi na kayan aiki, silicon carbide yana da nisa nisa 3 na band na kayan silicon, sau 10 mai mahimmanci ƙarfin filin lantarki, sau 3 da ƙarfin wutar lantarki, don haka na'urorin wutar lantarki na silicon carbide sun dace da babban mita, babban matsin lamba, high zafin jiki da sauran aikace-aikace, taimaka wajen inganta yadda ya dace da kuma ikon yawa na ikon lantarki tsarin.
A halin yanzu, SiC diodes da SiC MOSFETs sun koma kasuwa sannu a hankali, kuma akwai samfuran balagagge, daga cikinsu ana amfani da diodes na SiC da yawa maimakon diodes masu amfani da silicon a wasu wuraren saboda ba su da fa'ida ta dawo da cajin;Hakanan ana amfani da SiC MOSFET a hankali a cikin motoci, ajiyar makamashi, tari mai caji, hotovoltaic da sauran filayen;A fagen aikace-aikacen kera motoci, yanayin haɓakawa yana ƙara zama sananne, mafi girman aikin SiC yana buƙatar dogaro da ingantattun hanyoyin shirya marufi don cimmawa, a zahiri tare da ƙaramin balagagge harsashi azaman babban al'ada, gaba ko zuwa ci gaban rufewar filastik. , halayen haɓakawa na musamman sun fi dacewa da samfuran SiC.
Farashin Silicon carbide raguwar saurin gudu ko fiye da tunani
Aikace-aikacen na'urorin silicon carbide an iyakance su ne ta hanyar tsada mai yawa, farashin SiC MOSFET a ƙarƙashin wannan matakin shine sau 4 sama da na IGBT na Si, wannan shine saboda tsarin siliki carbide yana da rikitarwa, wanda haɓakar haɓakar siliki. kristal guda ɗaya da epitaxial ba kawai matsananciyar yanayi ba ne, amma kuma haɓakar haɓaka yana jinkirin, kuma aikin kristal guda ɗaya a cikin substrate dole ne ya bi ta hanyar yankewa da gogewa.Dangane da halayen kayan sa da kuma fasahar sarrafa balagagge, yawan amfanin ƙasa na cikin gida bai wuce 50% ba, kuma abubuwan daban-daban suna haifar da babban substrate da farashin epitaxial.
Duk da haka, farashin abun da ke ciki na na'urorin carbide na silicon da na'urorin tushen silicon ya bambanta da yawa, farashin substrate da epitaxial na tashar gaba yana lissafin 47% da 23% na duk na'urar bi da bi, jimlar kusan 70%, ƙirar na'urar, masana'anta. da likeing links na baya tashar lissafin kawai 30%, samar da kudin na silicon-tushen na'urorin ne yafi mayar da hankali a cikin wafer masana'antu na baya tashar game da 50%, da substrate kudin lissafin kawai 7%.Lamarin da darajar sarkar masana'antar siliki ta juye juye yana nufin cewa masana'antun epitaxy na sama suna da ainihin haƙƙin yin magana, wanda shine mabuɗin tsarin kasuwancin gida da na waje.
Daga ra'ayi mai ƙarfi akan kasuwa, rage farashin silicon carbide, ban da haɓaka siliki carbide dogon kristal da slicing tsari, shine faɗaɗa girman wafer, wanda kuma shine babban hanyar ci gaban semiconductor a baya. Bayanai na Wolfspeed sun nuna cewa haɓaka silin carbide substrate daga inci 6 zuwa 8 inci, ƙirar guntu na musamman na iya ƙaruwa da 80% -90%, kuma yana taimakawa haɓaka yawan amfanin ƙasa.Zai iya rage haɗin haɗin haɗin haɗin gwiwa da kashi 50%.
2023 da aka sani da "8-inch SiC farkon shekarar", a wannan shekara, gida da kuma waje silicon carbide masana'antun suna hanzarta shimfidar 8-inch silicon carbide, kamar Wolfspeed hauka zuba jari na 14.55 dalar Amurka biliyan don silicon carbide samar da fadada samar, Wani muhimmin sashi na wanda shine gina masana'antar masana'anta na SiC mai girman inci 8, Don tabbatar da samar da ƙarancin ƙarfe na SiC na 200 mm na gaba ga kamfanoni da yawa;Tianyue Advanced na cikin gida da Tianke Heda suma sun rattaba hannu kan yarjejeniyoyin dogon lokaci tare da Infineon don samar da siliki carbide substrates mai inci 8 a nan gaba.
Tun daga wannan shekara, silicon carbide zai haɓaka daga inci 6 zuwa inci 8, Wolfspeed yana tsammanin nan da 2024, farashin guntu na inci 8 inci idan aka kwatanta da naúrar guntu farashin inci 6 inci a cikin 2022 za a rage da fiye da 60% , kuma raguwar farashin zai kara buɗe kasuwar aikace-aikacen, Ji Bond Consulting bayanan bincike ya nuna.Kasuwar kasuwa na yanzu na samfuran inci 8 bai kai kashi 2% ba, kuma ana sa ran kasuwar kasuwar za ta yi girma zuwa kusan 15% nan da 2026.
A gaskiya ma, yawan raguwar farashin siliki carbide substrate na iya wuce tunanin mutane da yawa, tayin kasuwa na yanzu na 6-inch substrate shine 4000-5000 yuan / yanki, idan aka kwatanta da farkon shekara ya fadi da yawa, shine. Ana sa ran faɗuwa ƙasa da yuan 4000 a shekara mai zuwa, yana da kyau a lura cewa wasu masana'antun don samun kasuwa ta farko, sun rage farashin tallace-tallace zuwa layin farashin da ke ƙasa, Buɗe samfurin yaƙin farashin, galibi ya fi mayar da hankali a cikin siliki carbide substrate. wadata ya isa sosai a cikin ƙananan ƙarancin wutar lantarki, masana'antun gida da na waje suna faɗaɗa ƙarfin samarwa sosai, ko barin siliki carbide substrate oversupply mataki kafin zato.
Lokacin aikawa: Janairu-19-2024