Nawa kuka sani game da tsarin ci gaban kristal guda ɗaya na SiC?

Hanyar Canja wurin Tururin Jiki (PVT)
Hanyar canja wurin tururin jiki shine ɗayan hanyoyin haɓakar haɓakar silikon carbide da aka fi amfani dashi.Haɓaka silica carbide kristal guda ɗaya ya dogara ne akan sublimation na sic foda da redeposition akan kristal iri a ƙarƙashin yanayin zafin jiki.A cikin rufaffiyar graphite crucible, siliki carbide foda yana mai zafi zuwa babban zafin jiki, ta hanyar sarrafa yanayin zafin jiki, tururi na silicon carbide yana tashe saman kristal iri, kuma a hankali yana girma babban girman kristal guda ɗaya.
Mafi yawan SiC monocrystalline da muke samarwa a halin yanzu ana yin su ta wannan hanyar girma.Hakanan ita ce babbar hanya a cikin masana'antar.

Ruwan lokaci epitaxy (LPE)
Silicon carbide lu'ulu'u ana shirya su ta hanyar ruwa lokaci epitaxy ta hanyar kristal girma tsari a m-ruwa dubawa.A cikin wannan hanya, ana narkar da foda na silicon-carbon a cikin wani bayani na silicon-carbon a babban zafin jiki, sa'an nan kuma an rage yawan zafin jiki ta yadda silicon carbide ya samo asali daga maganin kuma ya girma a kan kristal iri.Babban amfani da hanyar LPE shine ikon samun lu'ulu'u masu inganci a ƙananan zafin jiki mai girma, farashin yana da ƙananan ƙananan, kuma ya dace da samar da manyan sikelin.

Zubar da Turin Sinadari mai zafin jiki (HT-CVD)
Ta hanyar gabatar da iskar da ke ɗauke da siliki da carbon a cikin ɗakin amsawa a babban zafin jiki, ƙirar siliki carbide guda ɗaya na crystal ana ajiye shi kai tsaye a saman kristal iri ta hanyar sinadarai.Amfanin wannan hanyar ita ce cewa za a iya sarrafa magudanar ruwa da yanayin halayen iskar gas daidai, don samun kristal silicon carbide tare da babban tsabta da ƙarancin lahani.Tsarin HT-CVD na iya samar da lu'ulu'u na siliki carbide tare da kyawawan kaddarorin, wanda ke da mahimmanci musamman ga aikace-aikace inda ake buƙatar kayan inganci masu inganci.