Sapphire kristal guda ɗaya ce ta alumina, tana cikin tsarin kristal ɗin tripartite, tsarin hexagonal, tsarin crystal ɗin sa ya ƙunshi nau'in atom ɗin oxygen guda uku da atom ɗin aluminum guda biyu a cikin nau'in haɗin gwiwa, an tsara su sosai, tare da sarkar haɗin gwiwa mai ƙarfi da makamashi mai ƙarfi, yayin da ta ke. crystal ciki kusan babu ƙazanta ko lahani, don haka yana da kyau kwarai rufin lantarki, nuna gaskiya, mai kyau thermal watsin da high rigidity halaye. An yi amfani da shi sosai azaman taga mai gani da manyan kayan aikin substrate. Duk da haka, tsarin kwayoyin sapphire yana da wuyar gaske kuma akwai anisotropy, kuma tasiri a kan abubuwan da suka dace na jiki kuma sun bambanta sosai don sarrafawa da amfani da hanyoyi daban-daban na crystal, don haka amfani ya bambanta. Gabaɗaya, ana samun sapphire substrates a cikin kwatancen jirgin C, R, A da M.
Aikace-aikace naC-jirgin sapphire wafer
Gallium nitride (GaN) a matsayin babban bandgap na ƙarni na uku na semiconductor, yana da rata mai faɗi kai tsaye, haɗin kai mai ƙarfi mai ƙarfi, haɓakar haɓakar thermal, ingantaccen kwanciyar hankali na sinadarai (kusan ba ya lalata ta kowane acid) da ƙarfin anti-iradiation mai ƙarfi, kuma yana da fa'ida sosai a cikin aikace-aikace na optoelectronics, babban zafin jiki da na'urorin wuta da na'urorin microwave masu girma. Duk da haka, saboda babban narkewar GaN, yana da wuya a sami manyan kayan kristal guda ɗaya, don haka hanyar gama gari ita ce aiwatar da haɓakar heteroepitaxy a kan sauran kayan ƙasa, wanda ke da buƙatu mafi girma don kayan aikin ƙasa.
Idan aka kwatanta dasapphire substratetare da wasu fuskokin lu'ulu'u, ƙimar rashin daidaituwa akai-akai tsakanin jirgin saman C-plane (<0001> daidaitawa) wafer sapphire da kuma fina-finan da aka ajiye a rukuni Ⅲ-Ⅴ da Ⅱ-Ⅵ (irin su GaN) yana da ɗan ƙarami, kuma rashin daidaituwa akai-akai. kimar tsakanin su biyu da naFina-finan AlNwanda za'a iya amfani da shi azaman buffer Layer ma ya fi karami, kuma ya dace da buƙatun juriya mai zafi a cikin tsarin GaN crystallization. Sabili da haka, abu ne na yau da kullum don ci gaban GaN, wanda za'a iya amfani dashi don yin farin / blue / kore leds, laser diodes, infrared detectors da sauransu.
Yana da daraja ambaton cewa GaN fim girma a kan C-jirgin sama sapphire substrate girma tare da iyakacin duniya axis, wato, shugabanci na C-axis, wanda ba kawai balagagge girma tsari da epitaxy tsari, in mun gwada da low cost, barga jiki. da sinadarai Properties, amma kuma mafi aiki aiki. Atom ɗin wafer sapphire mai daidaitawa C an haɗa su a cikin tsarin O-al-al-o-al-O, yayin da lu'ulu'u na sapphire masu daidaitawa da M-daidaitacce suna haɗe cikin al-O-al-O. Saboda Al-Al yana da ƙananan kuzarin haɗin gwiwa kuma yana da rauni fiye da Al-O, idan aka kwatanta da lu'ulu'u na sapphire da M-daidaitacce da A-daidaitacce, sarrafa C-sapphire shine galibi don buɗe maɓallin Al-Al, wanda shine sauƙin aiwatarwa. , kuma zai iya samun inganci mafi girma, sannan samun mafi kyawun gallium nitride epitaxial quality, wanda zai iya inganta ingancin ultra-high haske fari / blue LED. A gefe guda, fina-finan da aka girma tare da C-axis suna da tasirin polarization na lokaci-lokaci da kuma piezoelectric, wanda ya haifar da ƙarfin wutar lantarki na ciki a cikin fina-finai (aiki Layer quantum Wells), wanda ya rage girman ingancin fina-finai na GaN.
A-jirgin sapphire waferaikace-aikace
Saboda kyakkyawan aiki mai mahimmanci, musamman maɗaukakiyar watsawa, kristal sapphire guda ɗaya na iya haɓaka tasirin shigar da infrared, kuma ya zama ingantaccen kayan taga mai infrared, wanda aka yi amfani da shi sosai a cikin kayan aikin hoto na soja. Inda sapphire jirgin sama ne na polar (Cjirgin sama) a al'adar fuskar fuska, wani fili ne mara iyaka. Gabaɗaya, ingancin kristal sapphire na A-daidaitacce ya fi na C-daidaitacce crystal, tare da ƙarancin tarwatsewa, ƙarancin tsarin Mosaic da cikakken tsarin crystal, don haka yana da ingantaccen aikin watsa haske. A lokaci guda kuma, saboda yanayin haɗin gwiwar atomatik na Al-O-Al-O akan jirgin sama a, taurin da sawa juriya na sapphire mai ma'ana ya fi girma fiye da na sapphire-daidaitacce. Saboda haka, kwakwalwan kwamfuta na A-direction yawanci ana amfani da su azaman kayan taga; Bugu da kari, A saffir kuma yana da uniform dielectric akai-akai da kuma high rufi Properties, don haka shi za a iya amfani da matasan microelectronics fasahar, amma kuma ga girma na kwarai conductors, kamar amfani da TlBaCaCuO (TbBaCaCuO), Tl-2212, da girma. na fina-finai iri-iri na epitaxial superconducting akan cerium oxide (CeO2) sapphire composite substrate. Koyaya, kuma saboda babban ƙarfin haɗin gwiwa na Al-O, yana da wahalar aiwatarwa.
Aikace-aikace naR/M jirgin sapphire wafer
Jirgin R-jirgin saman sapphire ba shi da iyaka, don haka canjin matsayin R-jirgin a cikin na'urar sapphire yana ba shi nau'ikan inji, thermal, lantarki, da kayan gani. Gabaɗaya, R-surface sapphire substrate an fi son don jigilar heteroepitaxial na silicon, galibi don semiconductor, microwave da microelectronics hadedde aikace-aikacen da'ira, a cikin samar da gubar, sauran abubuwan haɓakawa, babban juriya, gallium arsenide kuma ana iya amfani dashi don R- rubuta substrate girma. A halin yanzu, tare da shaharar wayoyin hannu da tsarin kwamfuta na kwamfutar hannu, R-face sapphire substrate ya maye gurbin na'urorin SAW na yanzu da ake amfani da su don wayoyin hannu da kwamfutocin kwamfutar hannu, suna samar da na'urorin da za su iya inganta aikin.
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Lokacin aikawa: Yuli-16-2024