Sapphire lu'ulu'u ne guda ɗaya na alumina, yana cikin tsarin lu'ulu'u mai siffar tripartite, tsarin hexagonal, tsarin lu'ulu'unsa ya ƙunshi atoms uku na oxygen da atoms guda biyu na aluminum a cikin nau'in haɗin covalent, an shirya su sosai, tare da sarkar haɗin gwiwa mai ƙarfi da kuzarin lattice, yayin da cikin lu'ulu'unsa kusan babu ƙazanta ko lahani, don haka yana da kyakkyawan rufin lantarki, bayyananne, kyakkyawan watsa wutar lantarki da halayen tauri mai yawa. Ana amfani da shi sosai azaman taga na gani da kayan substrate masu aiki. Duk da haka, tsarin kwayoyin halitta na sapphire yana da rikitarwa kuma akwai anisotropy, kuma tasirin akan halayen jiki masu dacewa shima ya bambanta sosai don sarrafawa da amfani da hanyoyi daban-daban na lu'ulu'u, don haka amfani shima ya bambanta. Gabaɗaya, substrates na sapphire suna samuwa a cikin jagororin jirgin sama na C, R, A da M.
Aikace-aikacenWafer ɗin sapphire na C-plane
Gallium nitride (GaN) a matsayin wani sinadari mai faɗi na ƙarni na uku na semiconductor, yana da faɗin tazara mai faɗi ta kai tsaye, haɗin atomic mai ƙarfi, ƙarfin watsa wutar lantarki mai yawa, kyakkyawan kwanciyar hankali na sinadarai (kusan ba ya lalacewa da wani acid) da ƙarfin hana hasken rana, kuma yana da fa'ida mai faɗi a cikin amfani da optoelectronics, na'urorin zafi mai yawa da wutar lantarki da na'urorin microwave masu yawan mita. Duk da haka, saboda yawan narkewar GaN, yana da wuya a sami manyan kayan lu'ulu'u guda ɗaya, don haka hanyar gama gari ita ce aiwatar da haɓakar heteroepitaxy akan wasu substrates, wanda ke da buƙatu mafi girma don kayan substrate.
Idan aka kwatanta dadutsen shuɗi mai launin shuɗitare da wasu fuskokin lu'ulu'u, ƙimar rashin daidaito tsakanin layin C-plane (<0001> yanayin) sapphire wafer da fina-finan da aka ajiye a cikin ƙungiyoyi Ⅲ-Ⅴ da Ⅱ-Ⅵ (kamar GaN) ƙarami ne, kuma ƙimar rashin daidaito tsakanin layin biyu daFina-finan AlNwanda za a iya amfani da shi azaman layin buffer ya fi ƙanƙanta, kuma yana cika buƙatun juriyar zafin jiki mai yawa a cikin tsarin lu'ulu'u na GaN. Saboda haka, abu ne da aka saba amfani da shi don haɓakar GaN, wanda za a iya amfani da shi don yin fitilun fari/shuɗi/kore, diodes na laser, na'urorin gano infrared da sauransu.
Ya kamata a ambata cewa fim ɗin GaN da aka girma a kan tushen sapphire na C-plane yana girma tare da axis ɗinsa na polar, wato, alkiblar axis ɗin C, wanda ba wai kawai tsarin girma ne mai girma da tsarin epitaxy ba, mai rahusa, halayen jiki da sinadarai masu ɗorewa, amma kuma ingantaccen aikin sarrafawa. Ana haɗa ƙwayoyin halittar sapphire na C-oriented a cikin tsarin O-al-al-o-al-O, yayin da lu'ulu'u na sapphire masu ɗorewa da A-oriented an haɗa su a cikin al-O-al-O. Saboda Al-Al yana da ƙarancin kuzarin haɗin gwiwa da kuma rauni na haɗin gwiwa fiye da Al-O, idan aka kwatanta da lu'ulu'u na sapphire masu ɗorewa da A-oriented, sarrafa C-sapphire shine galibi don buɗe maɓallin Al-Al, wanda ya fi sauƙin sarrafawa, kuma yana iya samun mafi girman ingancin saman, sannan ya sami ingantaccen ingancin gallium nitride epitaxial, wanda zai iya inganta ingancin farin/shuɗi LED mai haske sosai. A gefe guda kuma, fina-finan da aka girma a kan axis na C suna da tasirin polarization na bazata da piezoelectric, wanda ke haifar da ƙarfin filin lantarki na ciki a cikin fina-finan (aiki mai aiki na quantum Wells), wanda ke rage ƙarfin hasken fina-finan GaN sosai.
Wafer mai siffar A-plane sapphireaikace-aikace
Saboda kyakkyawan aikinta, musamman ingantaccen watsawa, lu'ulu'u ɗaya na sapphire zai iya haɓaka tasirin shigar infrared, kuma ya zama kayan taga mai kyau na tsakiyar infrared, wanda aka yi amfani da shi sosai a cikin kayan aikin soja na photoelectric. Inda A sapphire jirgin sama ne na polar (C jirgin sama) a al'adar fuska, saman da ba na polar ba ne. Gabaɗaya, ingancin lu'ulu'u na sapphire mai kusurwa A ya fi na crystal mai kusurwa C kyau, tare da ƙarancin katsewa, ƙarancin tsarin Mosaic da cikakken tsarin lu'ulu'u, don haka yana da ingantaccen aikin watsa haske. A lokaci guda, saboda yanayin haɗin atomic na Al-O-Al-O akan plane a, tauri da juriyar lalacewa na sapphire mai kusurwa A sun fi na sapphire mai kusurwa C girma sosai. Saboda haka, galibi ana amfani da guntu na A a matsayin kayan taga; Bugu da ƙari, A sapphire yana da daidaiton dielectric constant da kuma babban kariya daga iska, don haka ana iya amfani da shi ga fasahar microelectronics masu haɗaka, amma kuma don haɓaka manyan masu jagoranci, kamar amfani da TlBaCaCuO (TbBaCaCuO), Tl-2212, haɓakar fina-finan epitaxial superconducting iri-iri akan cerium oxide (CeO2) sapphire composite substrate. Duk da haka, kuma saboda babban ƙarfin haɗin Al-O, yana da wahalar sarrafawa.
Amfani daWafer mai launin shuɗi mai launin R/M
R-plane shine saman sapphire mara polar, don haka canjin matsayin R-plane a cikin na'urar sapphire yana ba shi halaye daban-daban na injiniya, zafi, lantarki, da na gani. Gabaɗaya, an fi son substrate na R-surface sapphire don adana silicon mai heteroepitaxial, galibi don aikace-aikacen da'ira na semiconductor, microwave da microelectronics, wajen samar da gubar, sauran abubuwan da ke da ƙarfin iko, masu juriya masu ƙarfi, ana iya amfani da gallium arsenide don haɓakar substrate na nau'in R. A halin yanzu, tare da shaharar wayoyin komai da ruwanka da tsarin kwamfutar kwamfutar hannu, substrate na R-face sapphire ya maye gurbin na'urorin SAW da ake amfani da su don wayoyin komai da ruwanka da kwamfutocin kwamfutar hannu, yana samar da substrate ga na'urorin da za su iya inganta aiki.
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Lokacin Saƙo: Yuli-16-2024