N-Type SiC akan Si Composite Substrates Dia6inch

N-Type SiC on Si composite substrates kayan semiconductor ne wanda ya ƙunshi Layer na nau'in silicon carbide (SiC) wanda aka ajiye akan siliki (Si).

Aika mana imel

Cikakken Bayani

等级Daraja	ku 级	P级	D 级
	Babban darajar BPD	Matsayin samarwa	Dummy Grade
直径Diamita	150.0 mm 0.25mm
厚度Kauri	500 μm± 25μm
晶片方向Wafer Orientation	Kashe axis: 4.0 ° zuwa <11-20> ± 0.5° don 4H-N Kan axis: <0001>±0.5°don 4H-SI
主定位边方向Firamare Flat	{10-10}±5.0°
主定位边长度Tsawon Lantarki na Farko	47.5 mm± 2.5 mm
边缘Cire gefen	3 mm ku
总厚度变化/弯曲度/翘曲度 TTV/Baw /Warp	≤15μm/≤40μm/≤60μm
微管密度和基面位错MPD&BPD	MPD≤1 cm-2	MPD≤5 cm-2	MPD≤15 cm-2
	BPD≤1000cm-2
电阻率Resistivity	≥1E5 Ω·cm
表面粗糙度Tashin hankali	Yaren mutanen Poland Ra≤1 nm
	CMP Ra≤0.5 nm
裂纹(强光灯观测) #	Babu		Tsayin tarawa ≤10mm, tsayi ɗaya≤2mm
Fasasshiyar haske mai ƙarfi
六方空洞（强光灯观测）*	Tarin yanki ≤1%		Tarin yanki ≤5%
Hex Plates ta babban haske mai ƙarfi
多型(强光灯观测)*	Babu		Tarin yanki ≤5%
Wuraren Polytype ta babban haske mai ƙarfi
划痕(强光灯观测)*&	3 scratches zuwa 1 × wafer diamita		5 scratches zuwa 1× wafer diamita
Scratches da babban tsananin haske	tsayin tarawa		tsayin tarawa
崩边# Ciwon daji	Babu		5 izini, ≤1 mm kowanne
表面污染物（强光灯观测）	Babu
Lalacewa ta wurin babban haske mai ƙarfi