N-Type SiC akan Si Composite Substrates Dia6inch
| 等级Daraja | ku 级 | P级 | D 级 |
| Babban darajar BPD | Matsayin samarwa | Dummy Grade | |
| 直径Diamita | 150.0 mm 0.25mm | ||
| 厚度Kauri | 500 μm± 25μm | ||
| 晶片方向Wafer Orientation | Kashe axis: 4.0 ° zuwa <11-20> ± 0.5° don 4H-N Kan axis: <0001>±0.5°don 4H-SI | ||
| 主定位边方向Filayen Firamare | {10-10}±5.0° | ||
| 主定位边长度Tsawon Fitowa na Farko | 47.5 mm± 2.5 mm | ||
| 边缘Cire gefen | 3 mm ku | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Baw /Warp | ≤15μm/≤40μm/≤60μm | ||
| 微管密度和基面位错MPD&BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Resistivity | ≥1E5 Ω·cm | ||
| 表面粗糙度Tashin hankali | Yaren mutanen Poland Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Babu | Tsayin tarawa ≤10mm, tsayi ɗaya≤2mm | |
| Fasasshiyar haske mai ƙarfi | |||
| 六方空洞（强光灯观测）* | Tarin yanki ≤1% | Tarin yanki ≤5% | |
| Hex Plates ta babban haske mai ƙarfi | |||
| 多型(强光灯观测)* | Babu | Tarin yanki ≤5% | |
| Wuraren Polytype ta wurin haske mai ƙarfi | |||
| 划痕(强光灯观测)*& | 3 scratches zuwa 1 × wafer diamita | 5 scratches zuwa 1× wafer diamita | |
| Scratches da babban tsananin haske | tsayin tarawa | tsayin tarawa | |
| 崩边# Ciwon daji | Babu | 5 izini, ≤1 mm kowanne | |
| 表面污染物（强光灯观测） | Babu | ||
| Lalacewa ta wurin babban haske mai ƙarfi | |||
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