Nau'in N-Type SiC akan Si Composite Substrates Dia6inch

等级Matsayi

ku 级

P级

D 级

Ƙananan Matsakaici na BPD

Matsayin Samarwa

Daraja ta Karya

直径diamita

150.0 mm±0.25mm

厚度Kauri

500 μm±25μm

晶片方向Tsarin Wafer

Kashe axis: 4.0°zuwa < 11-20 > ±0.5°don 4H-N A axis: <0001>±0.5°don 4H-SI

主定位边方向Babban Gida

{10-10}±5.0°

主定位边长度Babban Tsawon Lebur

47.5 mm±2.5 mm

边缘Warewar gefen

3 mm

总厚度变化/弯曲度/翘曲度 TTV/Baw /Warp

≤15μm /≤40μm /≤60μm

微管密度和基面位错MPD&BPD

MPD≤1 cm-2

MPD≤5 cm-2

MPD≤15 cm-2

BPD≤1000cm-2

电阻率Juriya

≥1E5 Ω·cm

表面粗糙度Taurin kai

Yaren mutanen Poland Ra≤1 nm

CMP Ra≤0.5 nm

裂纹(强光灯观测) #

Babu

Tsawon jimilla ≤10mm, tsawonsa ɗaya ≤2mm

Fashewa ta hanyar haske mai ƙarfi

六方空洞（强光灯观测）*

Yankin da aka tara ≤1%

Yankin da aka tara ≤5%

Faranti na Hex ta hanyar haske mai ƙarfi

多型(强光灯观测)*

Babu

Yankin da aka tara≤5%

Yankunan Polytype ta hanyar haske mai ƙarfi

划痕(强光灯观测)*&

Ƙira 3 zuwa diamita 1 × wafer

Karce 5 zuwa diamita 1 × wafer

Karce ta hanyar haske mai ƙarfi

tsawon tarawa

tsawon tarawa

崩边# Guntuwar Edge

Babu

An yarda da 5, ≤1 mm kowanne

表面污染物（强光灯观测）

Babu

Gurɓatawa ta hanyar haske mai ƙarfi