N-Nau'in SiC Composite Substrates Dia6inch Babban ingancin monocrystaline da ƙarancin inganci.
N-Nau'in SiC Composite Substrates Common siga tebur
| 项目Abubuwa | 指标Ƙayyadaddun bayanai | 项目Abubuwa | 指标Ƙayyadaddun bayanai |
| 直径Diamita | 150± 0.2mm | 正 面 ( 硅 面 ) 粗 糙 度 Gaba (Si-face) rashin ƙarfi | Ra≤0.2nm (5μm*5μm) |
| 晶型Polytype | 4H | Edge Chip, Scratch, Crack (duba gani) | Babu |
| 电阻率Resistivity | 0.015-0.025ohm · cm | 总厚度变化TTV | ≤3 μm |
| Canja wurin kauri | ≥0.4μm | 翘曲度Warp | ≤35μm |
| 空洞Babu | ≤5ea/wafer (2mm>D>0.5mm) | 总厚度Kauri | 350± 25μm |
Sunan "nau'in N" yana nufin nau'in doping da ake amfani da su a cikin kayan SiC. A cikin ilimin kimiyyar semiconductor, doping ya ƙunshi ƙaddamar da ƙazanta da gangan a cikin semiconductor don canza kayan lantarki. N-type doping yana gabatar da abubuwan da ke samar da wuce haddi na electrons kyauta, yana ba kayan abun da ke tattare da caji mara kyau.
Fa'idodin nau'in N-type SiC composite substrates sun haɗa da:
1. Ayyukan zafi mai zafi: SiC yana da haɓakar haɓakar thermal kuma yana iya yin aiki a yanayin zafi mai zafi, yana sa ya dace da aikace-aikacen lantarki mai ƙarfi da haɓakawa.
2. Babban rushewar wutar lantarki: Kayan SiC suna da babban ƙarfin rushewa, yana ba su damar yin tsayayya da manyan filayen lantarki ba tare da lalata wutar lantarki ba.
3. Chemical da juriya na muhalli: SiC yana da tsayayyar sinadarai kuma yana iya jure yanayin yanayi mai tsanani, yana sa ya dace da amfani a aikace-aikace masu kalubale.
4. Rage asarar wutar lantarki: Idan aka kwatanta da kayan da aka yi da silicon na gargajiya, SiC substrates yana ba da damar yin amfani da wutar lantarki mafi dacewa da kuma rage asarar wutar lantarki a cikin na'urorin lantarki.
5. Wide bandgap: SiC yana da babban bandeji, yana ba da damar haɓaka na'urorin lantarki waɗanda zasu iya aiki a yanayin zafi mafi girma da ƙananan ƙarfin wuta.
Gabaɗaya, nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in (N-type) na SiC yana ba da fa'idodi masu mahimmanci don haɓaka na'urorin lantarki masu inganci, musamman a aikace-aikacen da yanayin zafi mai zafi, ƙarfin ƙarfin ƙarfi, da ingantaccen canjin wutar lantarki ke da mahimmanci.
