Substrates na N-Type SiC Dia6inch Babban monocrystalline mai inganci da ƙarancin substrate

Takaitaccen Bayani:

Substrates na N-Type SiC wani abu ne na semiconductor da ake amfani da shi wajen samar da na'urorin lantarki. An yi waɗannan substrates ne daga silicon carbide (SiC), wani abu da aka sani da kyakkyawan yanayin zafi, ƙarfin lantarki mai ƙarfi, da kuma juriya ga mawuyacin yanayi na muhalli.


Siffofi

N-Type SiC Composite Substrates Teburin sigogi na gama gari

项目Abubuwa 指标Ƙayyadewa 项目Abubuwa 指标Ƙayyadewa
直径diamita 150±0.2mm ( 硅 面 ) 粗 糙 度
Tsananin gaba (Si-fuska)
Ra≤0.2nm (5μm*5μm)
晶型Nau'in Polytype 4H Guntuwar gefen, gogewa, fashewa (duba gani) Babu
电阻率Juriya 0.015-0.025ohm ·cm 总厚度变化TTV ≤3μm
Kauri na canja wurin Layer ≥0.4μm 翘曲度Warp ≤35μm
空洞Babu komai ≤5ea/wafer (2mm>D>0.5mm) 总厚度Kauri 350±25μm

Sunan "N-type" yana nufin nau'in doping da ake amfani da shi a cikin kayan SiC. A fannin kimiyyar semiconductor, doping ya ƙunshi shigar da ƙazanta da gangan cikin semiconductor don canza halayen wutar lantarki. Doping na nau'in N yana gabatar da abubuwan da ke samar da ƙarin electrons kyauta, yana ba kayan wani taro mai kama da na mai caji mara kyau.

Fa'idodin abubuwan haɗin gwiwa na N-type SiC sun haɗa da:

1. Ayyukan zafin jiki mai yawa: SiC yana da ƙarfin lantarki mai yawa kuma yana iya aiki a yanayin zafi mai yawa, wanda hakan ya sa ya dace da aikace-aikacen lantarki mai ƙarfi da mita mai yawa.

2. Babban ƙarfin lantarki mai lalacewa: Kayan SiC suna da babban ƙarfin lantarki mai lalacewa, wanda ke ba su damar jure manyan filayen lantarki ba tare da lalacewar lantarki ba.

3. Juriyar sinadarai da muhalli: SiC yana da juriya ga sinadarai kuma yana iya jurewa mawuyacin yanayi na muhalli, wanda hakan ya sa ya dace da amfani da shi a aikace-aikace masu wahala.

4. Rage asarar wutar lantarki: Idan aka kwatanta da kayan gargajiya na silicon, SiC substrates yana ba da damar canza wutar lantarki mai inganci da rage asarar wutar lantarki a cikin na'urorin lantarki.

5. Faɗin bandeji: SiC yana da faɗi da bandeji, wanda ke ba da damar haɓaka na'urorin lantarki waɗanda za su iya aiki a yanayin zafi mafi girma da kuma yawan ƙarfin lantarki mafi girma.

Gabaɗaya, nau'in N-type SiC composite substrates suna ba da fa'idodi masu mahimmanci don haɓaka na'urorin lantarki masu aiki mai girma, musamman a aikace-aikace inda aikin zafi mai yawa, yawan wutar lantarki mai yawa, da ingantaccen canjin wutar lantarki suna da mahimmanci.


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