LiTaO3 Lithium Tantalate Ingots tare da Fe/Mg Doping Na Musamman 4inch 6inch 8inch don Sensing Masana'antu

LiTaO3 Lithium Tantalate Ingots tare da Fe/Mg Doping Na Musamman 4inch 6inch 8inch don Fitar da Hoton Masana'antu

Takaitaccen Bayani:

LiTaO3 Ingots (Lithium Tantalate Ingots), a matsayin ainihin kayan don na'urori masu fa'ida-bandgap na ƙarni na uku da optoelectronics, suna ba da damar yawan zafin jiki na Curie (607)°C), faffadan bayyananniyar kewayon (400-5,200 nm), ingantacciyar hanyar haɗin haɗin gwiwa ta lantarki (Kt²>15%), da ƙarancin ƙarancin wutar lantarki (tanδ <2%) don kawo sauyi na sadarwar 5G, ƙididdigar ƙira, da haɗin kai. Ta hanyar fasahar ƙirƙira ta ci gaba kamar jigilar tururi ta jiki (PVT) da jigilar sinadarai (CVD), muna samar da X/Y/Z-cut, 42°Y-cut, da lokaci-lokaci poled (PPLT) ingots a cikin ƙayyadaddun 3-8-inch, tare da ƙarancin ƙarancin micropipe <0.1 cm⁻² da rarrabuwar kawuna <50 cm. Ayyukanmu sun haɗa da Fe/Mg doping, proton musanya waveguides, da haɗin kai na tushen silicon (POI), yana magance manyan abubuwan tacewa, maɓuɓɓugar haske mai ƙididdigewa, da masu gano infrared. Wannan kayan yana haifar da ci gaba a cikin ƙarami, aiki mai ƙarfi, da kwanciyar hankali na thermal, haɓaka maye gurbin gida da ci gaban fasaha.

Aika mana imel

Siffofin

Siffofin fasaha

Ƙayyadaddun bayanai	Na al'ada	Babban Madaidaici
Kayayyaki	LiTaO3(LT)/ LiNbO3 wafers	LiTaO3(LT)/LiNbO3 wafers
Gabatarwa	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
Daidaici	30"	10''
Perpendicular	10'	5'
ingancin saman	40/20	20/10
Karyawar Wavefront	λ/4@632nm	λ/8@632nm
Lalacewar saman	λ/4@632nm	λ/8@632nm
Share Budewa	>90%	>90%
Chamfer	<0.2×45°	<0.2×45°
Haƙuri da Kauri/Diamita	± 0.1 mm	± 0.1 mm
Matsakaicin girma	diamita 150 × 50mm	diamita 150 × 50mm

Ayyukan XKH

1. Babban-Sikelin Ingot Fabrication;

Girma da Yanke: 3-8-inch ingots tare da yanke X/Y/Z, 42°Y-yanke, da yanke angular al'ada (± 0.01° haƙuri).

Ikon Doping: Fe/Mg co-doping ta hanyar Czochralski (kewayon tattarawa 10¹⁶-10¹⁹ cm⁻³) don haɓaka juriya na hoto da kwanciyar hankali.

2. Advanced Process Technologies;

Haɗe-haɗe-haɗe-haɗe: Silicon na tushen LiTaO3 wafers (POI) tare da sarrafa kauri (300-600 nm) da haɓakar thermal har zuwa 8.78 W / m · K don matattarar SAW mai girma.

Waveguide Fabrication: Proton musayar (PE) da kuma juyar da proton musayar (RPE) dabaru, cimma submicron waveguides (Δn> 0.7) don high-gudun electro-optic modulators (bandwidth> 40 GHz).

3. Tsarin Gudanar da Ingancin

Gwajin Ƙarshe zuwa Ƙarshen: Raman spectroscopy (tabbacin polytype), XRD (crystallinity), AFM (surface morphology), da gwajin daidaituwa na gani (Δn <5 × 10⁻).

4. Tallafin Sarkar Kayayyakin Duniya

Ƙarfin samarwa: Fitarwa na wata-wata> 5,000 ingots (8-inch: 70%), yana goyan bayan isar da gaggawa na sa'o'i 48.

Cibiyar Sadarwar Hannu: Rufewa a cikin Turai, Arewacin Amurka, da Asiya-Pacific ta hanyar jigilar iska / teku tare da marufi mai sarrafa zafin jiki.

5. Fasaha Co-Ci gaba

Haɗin gwiwar R&D Labs: Haɗin kai akan dandamalin haɗin kai na hoto (misali, SiO2 ƙaramar asara Layer bonding).

Takaitawa

LiTaO3 Ingots suna aiki azaman kayan dabarun sake fasalin optoelectronics da fasahar ƙididdigewa. Ta hanyar sabbin abubuwa a cikin haɓakar kristal (misali, PVT), raguwar lahani, da haɗin kai daban-daban (misali, POI), muna isar da babban abin dogaro, mafita mai tsada don sadarwar 5G/6G, ƙididdige ƙididdigewa, da masana'antu IoT. Ƙaddamar da XKH don haɓaka raguwar lahani da haɓaka samar da inch 8 yana tabbatar da abokan ciniki suna jagoranci a cikin sarkar samar da kayayyaki na duniya, suna haifar da zamani na gaba na tsarin muhalli mai faɗi-bandgap.