Ingots na Lithium Tantalate na LiTaO3 tare da Fe/Mg Doping na musamman na inci 4, inci 6, inci 8 don fahimtar masana'antu

Ingots na Lithium Tantalate na LiTaO3 tare da Fe/Mg Doping na musamman mai inci 4 da inci 6 da inci 8 don fahimtar masana'antu Hoton da aka nuna

Takaitaccen Bayani:

Ingots na LiTaO3 (Lithium Tantalate Ingots), a matsayin kayan aiki na semiconductor na ƙarni na uku da optoelectronics, suna amfani da zafin Curie mai girma (607)°C), kewayon bayyananne mai faɗi (400-5,200 nm), kyakkyawan ma'aunin haɗin lantarki na lantarki (Kt² > 15%), da ƙarancin asarar dielectric (tanδ <2%) don kawo sauyi ga sadarwa ta 5G, ƙididdigar kwantum, da haɗin photonic. Ta hanyar fasahar kera abubuwa masu ci gaba kamar jigilar tururi na jiki (PVT) da adana tururin sinadarai (CVD), muna samar da ingots na X/Y/Z, yanke 42°Y, da kuma lokaci-lokaci na poled (PPLT) a cikin ƙayyadaddun bayanai na inci 3-8, tare da yawan micropipe <0.1 cm⁻² da yawan dislocation <500 cm⁻². Ayyukanmu sun haɗa da doping na Fe/Mg, jagororin musayar proton, da haɗin kai iri-iri na silicon (POI), magance matatun gani masu aiki, tushen hasken kwantum, da na'urorin gano infrared. Wannan kayan yana haifar da ci gaba a cikin ƙaramin aiki, aiki mai yawan mita, da kwanciyar hankali na zafi, yana hanzarta maye gurbin gida da ci gaban fasaha.

Aika mana imel

Siffofi

Sigogi na fasaha

Ƙayyadewa	Na al'ada	Babban Daidaito
Kayan Aiki	Wafers ɗin LiTaO3(LT)/LiNbO3	Wafers ɗin LiTaO3(LT)/LiNbO3
Hanya	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
Layi daya	30"	10''
Perpendicular	10′	5'
Ingancin farfajiya	40/20	20/10
Rushewar Gabar Raƙuman Ruwa	λ/4@632nm	λ/8@632nm
Faɗin farfajiya	λ/4@632nm	λ/8@632nm
Share Buɗewar Hanya	>90%	>90%
Chamfer	<0.2×45°	<0.2×45°
Juriyar Kauri/Diamita	±0.1 mm	±0.1 mm
Matsakaicin girma	dia150×50mm	dia150×50mm

Ayyukan XKH

1. Ƙirƙirar Ingot Mai Girma;

Girma da Yankewa: Ingots masu inci 3-8 tare da yanke X/Y/Z, yanke 42° Y, da yanke kusurwa na musamman (±0.01° haƙuri).

Kula da Magungunan Doping: Fe/Mg tare da allurar Fe ta hanyar hanyar Czochralski (tsakanin maida hankali 10¹⁶–10¹⁹ cm⁻³) don inganta juriyar photorefractive da kwanciyar hankali na zafi.

2. Fasahar Tsarin Ci gaba;

Haɗin kai iri-iri: Wafers ɗin haɗin gwiwa na LiTaO3 da aka yi da silicon (POI) tare da sarrafa kauri (300–600 nm) da kuma ƙarfin lantarki na zafi har zuwa 8.78 W/m·K don matatun SAW masu yawan mita.

Ƙirƙirar Jagorar Wave: Dabaru na musayar proton (PE) da musayar proton (RPE), cimma jagororin wave na submicron (Δn > 0.7) don masu daidaita wutar lantarki mai sauri (bandwidth > 40 GHz).

3. Tsarin Gudanar da Inganci

Gwaji Daga Ƙarshe Zuwa Ƙarshe: Raman spectroscopy (tabbatar da nau'in polytype), XRD (crystallinity), AFM (siffar saman), da gwajin daidaiton gani (Δn <5×10⁻⁵).

4. Tallafin Sarkar Samar da Kayayyaki na Duniya

Ƙarfin Samarwa: Fitar da kayayyaki a kowane wata ya fi ingot 5,000 (inci 8: 70%), wanda ke tallafawa isar da gaggawa na awanni 48.

Cibiyar Sadarwar Jigilar Kaya: Rufewa a Turai, Arewacin Amurka, da Asiya-Pacific ta hanyar jigilar kaya ta iska/teku tare da marufi mai sarrafa zafin jiki.

5. Haɓaka Haɗin gwiwar Fasaha

Dakunan gwaje-gwaje na R&D na haɗin gwiwa: Yi aiki tare akan dandamalin haɗin photonic (misali, haɗin Layer mai ƙarancin asara na SiO2).

Takaitaccen Bayani

LiTaO3 Ingots suna aiki a matsayin kayan dabaru don sake fasalin fasahar optoelectronics da fasahar quantum. Ta hanyar sabbin abubuwa a cikin haɓakar lu'ulu'u (misali, PVT), rage lahani, da haɗakarwa daban-daban (misali, POI), muna samar da mafita masu inganci da aminci don sadarwa ta 5G/6G, ƙididdigar quantum, da IoT na masana'antu. Jajircewar XKH don haɓaka rage lahani na ingot da haɓaka samar da inci 8 yana tabbatar da cewa abokan ciniki suna jagoranci a cikin sarƙoƙin samar da kayayyaki na duniya, wanda ke jagorantar zamani na gaba na yanayin semiconductor mai faɗi.