InSb wafer 2inch 3inch wanda ba a rufe shi ba Ntype P nau'in daidaitawa 111 100 don Gano Infrared

InSb wafer 2inch 3inch mara kwancewa Ntype P nau'in daidaitawa 111 100 don Fahimtar Hoton Infrared

Takaitaccen Bayani:

Indium Antimonide (InSb) wafers sune mahimman kayan da aka yi amfani da su a cikin fasahar gano infrared saboda kunkuntar bandgap ɗin su da babban motsi na lantarki. Akwai su a cikin diamita 2-inch da 3-inch, ana ba da waɗannan wafers a cikin nau'in nau'in N, da bambancin nau'in P. An ƙirƙira wafers tare da daidaitawa na 100 da 111, suna ba da sassauci don gano infrared iri-iri da aikace-aikacen semiconductor. Babban hankali da ƙananan amo na InSb wafers ya sa su dace don amfani da su a cikin masu gano infrared na tsakiya (MWIR), tsarin hoto na infrared, da sauran aikace-aikacen optoelectronic waɗanda ke buƙatar daidaito da babban aiki.

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Zaɓuɓɓukan Doping:
1. Ba a gama ba:Wadannan wafers ba su da 'yanci daga kowane nau'in doping kuma ana amfani da su da farko don aikace-aikace na musamman irin su ci gaban epitaxial, inda wafer ke aiki a matsayin mai tsabta mai tsabta.
2.N-Nau'i (Te Doped):Tellurium (Te) doping ana amfani da shi don ƙirƙirar wafers nau'in N, yana ba da babban motsi na lantarki da sanya su dacewa da masu gano infrared, na'urorin lantarki masu sauri, da sauran aikace-aikacen da ke buƙatar ingantaccen wutar lantarki.
3.P-Nau'in (Ge Doped):Ana amfani da Germanium (Ge) doping don ƙirƙirar wafers na nau'in P, yana ba da motsi mai zurfi da kuma ba da kyakkyawan aiki ga na'urori masu auna siginar infrared da masu gano hoto.

Zabuka Girma:
1.The wafers suna samuwa a cikin 2-inch da 3-inch diamita. Wannan yana tabbatar da dacewa tare da matakai daban-daban na ƙirƙira semiconductor da na'urori.
2.The 2-inch wafer yana da 50.8 ± 0.3mm diamita, yayin da 3-inch wafer yana da 76.2 ± 0.3mm diamita.

Gabatarwa:
1.The wafers suna samuwa tare da daidaitawa na 100 da 111. Hanya na 100 yana da kyau ga kayan aiki masu sauri da kuma infrared detectors, yayin da 111 ana amfani da shi akai-akai don na'urorin da ke buƙatar takamaiman kayan lantarki ko kayan gani.

Ingancin saman:
1.Wadannan wafers sun zo tare da goge / etched saman don kyakkyawan inganci, yana ba da damar aiki mafi kyau a cikin aikace-aikacen da ke buƙatar daidaitattun halayen gani ko na lantarki.
2.Tsarin shirye-shiryen yana tabbatar da ƙarancin ƙarancin lahani, yin waɗannan wafers manufa don aikace-aikacen gano infrared inda daidaiton aiki yana da mahimmanci.

Epi-Shirya:
1.Wadannan wafers suna shirye-shirye na epi, suna sa su dace da aikace-aikacen da ke tattare da ci gaban epitaxial inda za a ajiye ƙarin matakan kayan aiki a kan wafer don ci gaba na semiconductor ko kayan aikin optoelectronic.

Aikace-aikace

1. Infrared Detectors:InSb wafers ana amfani da su sosai wajen ƙirƙira na'urorin gano infrared, musamman a cikin jeri na infrared (MWIR). Suna da mahimmanci don tsarin hangen nesa na dare, hoton zafi, da aikace-aikacen soja.
2.Infrared Imaging Systems:Babban hazaka na wafers na InSb yana ba da izini ga madaidaicin hoton infrared a sassa daban-daban, gami da tsaro, sa ido, da binciken kimiyya.
3. Lantarki Mai Sauri:Saboda yawan motsin lantarki, waɗannan wafers ana amfani da su a cikin na'urorin lantarki na ci gaba kamar transistor masu sauri da na'urorin optoelectronic.
4. Na'urorin Rijiyar Quantum:InSb wafers suna da kyau don aikace-aikacen rijiyar ƙididdiga a cikin lasers, ganowa, da sauran tsarin optoelectronic.

Sigar Samfura

Siga	2 inci	3 inci
Diamita	50.8 ± 0.3mm	76.2 ± 0.3mm
Kauri	500± 5μm	650± 5μm
Surface	Goge/Etched	Goge/Etched
Nau'in Doping	Undoped, Te-doped (N), Ge-doped (P)	Undoped, Te-doped (N), Ge-doped (P)
Gabatarwa	100, 111	100, 111
Kunshin	Single	Single
Epi-Shirya	Ee	Ee

Ma'aunin Wutar Lantarki don Te Doped (N-Nau'in):

Motsi: 2000-5000 cm²/V·s
Resistivity: (1-1000) Ω·cm
EPD (Defect Density): ≤2000 lahani/cm²

Ma'aunin Lantarki na Ge Doped (Nau'in P):

Motsi: 4000-8000 cm²/V·s
Resistivity: (0.5-5) Ω·cm

EPD (Defect Density): ≤2000 lahani/cm²

Tambaya&A (Tambayoyin da ake yawan yi)

Q1: Menene madaidaicin nau'in doping don aikace-aikacen gano infrared?

A1:Te-doped (nau'in N)wafers yawanci zaɓi ne mai kyau don aikace-aikacen gano infrared, yayin da suke ba da babban motsi na lantarki da kyakkyawan aiki a cikin injin infrared na tsakiya (MWIR) da tsarin hoto.

Q2: Zan iya amfani da waɗannan wafers don aikace-aikacen lantarki mai sauri?

A2: Ee, InSb wafers, musamman waɗanda suke daN-nau'in dopingda kuma100 daidaitawa, sun dace da na'urorin lantarki masu sauri irin su transistor, na'urorin rijiyar quantum, da kayan aikin optoelectronic saboda yawan motsin lantarki.

Q3: Menene bambance-bambancen tsakanin hanyoyin 100 da 111 don wafers na InSb?

A3: ku100Ana amfani da daidaitawa da yawa don na'urorin da ke buƙatar aikin lantarki mai sauri, yayin da111Ana amfani da daidaitawa sau da yawa don takamaiman aikace-aikace waɗanda ke buƙatar halayen lantarki daban-daban ko na gani, gami da wasu na'urorin optoelectronic da firikwensin.

Q4: Menene mahimmancin fasalin Epi-Ready don wafers na InSb?

A4: kuEpi-ShiryaSiffar tana nufin cewa an riga an riga an yi maganin wafer don hanyoyin jigilar epitaxial. Wannan yana da mahimmanci ga aikace-aikacen da ke buƙatar haɓakar ƙarin yadudduka na abu a saman wafer, kamar a cikin samar da na'urorin semiconductor na ci gaba ko na'urorin optoelectronic.

Q5: Menene aikace-aikace na yau da kullun na InSb wafers a cikin filin fasahar infrared?

A5: InSb wafers ana amfani da su da farko a cikin gano infrared, hoto na thermal, tsarin hangen nesa na dare, da sauran fasahar ji na infrared. Babban hankalinsu da ƙaramar amo ya sa su dace da suInfrared na tsakiya mai tsayi (MWIR)ganowa.

Q6: Ta yaya kauri na wafer ke shafar aikinsa?

A6: Kauri na wafer yana taka muhimmiyar rawa a cikin kwanciyar hankali na injiniya da halayen lantarki. Ana amfani da wafers na bakin ciki sau da yawa a cikin aikace-aikace masu mahimmanci inda ake buƙatar madaidaicin iko akan kaddarorin kayan aiki, yayin da wafers masu kauri suna ba da ingantacciyar dorewa ga wasu aikace-aikacen masana'antu.

Q7: Ta yaya zan zaɓi girman wafer ɗin da ya dace don aikace-aikacena?

A7: Girman wafer da ya dace ya dogara da takamaiman na'ura ko tsarin da aka tsara. Ana amfani da ƙananan wafers (2-inch) don bincike da ƙananan aikace-aikace, yayin da mafi girma wafers (3-inch) yawanci ana amfani da su don samar da taro da manyan na'urori masu buƙatar ƙarin abu.

Kammalawa

InSb yana shiga2 incikuma3 incimasu girma dabam, tare dakwance, Nau'in N, kumaNau'in PBambance-bambance, suna da kima sosai a cikin semiconductor da aikace-aikacen optoelectronic, musamman a cikin tsarin gano infrared. The100kuma111daidaitawa suna ba da sassauci don buƙatun fasaha daban-daban, daga na'urorin lantarki masu sauri zuwa tsarin hoto na infrared. Tare da keɓaɓɓen motsi na lantarki, ƙaramar amo, da ingantaccen ingancin saman, waɗannan wafers sun dace datsakiyar zangon infrared ganowada sauran aikace-aikace masu inganci.