Wafers na Indium Antimonide (InSb) nau'in N nau'in P Epi wanda aka shirya ba tare da an cire shi ba Te wanda aka yi wa allura ko Ge wanda aka yi wa allura mai inci 2, inci 3, kauri inci 4 Indium Antimonide (InSb)

Wafers na Indium Antimonide (InSb) nau'in N nau'in P Epi wanda aka shirya ba tare da an cire shi ba Te doped ko Ge doped 2in 3in 4 kauri Indium Antimonide (InSb) Hoton da aka nuna

Takaitaccen Bayani:

Wafers ɗin Indium Antimonide (InSb) muhimmin sashi ne a cikin aikace-aikacen lantarki da optoelectronic masu aiki sosai. Waɗannan wafers ɗin suna samuwa a nau'ikan iri-iri, gami da nau'in N-type, nau'in P-type, da waɗanda ba a cire su ba, kuma ana iya haɗa su da abubuwa kamar Tellurium (Te) ko Germanium (Ge). Ana amfani da wafers ɗin InSb sosai a cikin gano infrared, transistors masu sauri, na'urorin rijiyar quantum, da sauran aikace-aikace na musamman saboda kyawun motsi na electron da kunkuntar bandgap ɗinsu. Wafers ɗin suna samuwa a cikin diamita daban-daban kamar inci 2, inci 3, da inci 4, tare da daidaitaccen sarrafa kauri da saman da aka goge/lakabi mai inganci.

Aika mana imel

Siffofi

Zaɓuɓɓukan amfani da maganin hana amfani da kwayoyi:
1. Ba a taɓa shan sa ba:Waɗannan wafers ɗin ba su da wani maganin hana shan ƙwayoyi, wanda hakan ya sa suka dace da amfani na musamman kamar ci gaban epitaxial.
2. Te Doped (Nau'in N):Ana amfani da allurar Tellurium (Te) don ƙirƙirar wafers na nau'in N, waɗanda suka dace da aikace-aikace kamar na'urorin gano infrared da na'urorin lantarki masu sauri.
3. Ge Doped (Nau'in P):Ana amfani da maganin Germanium (Ge) don ƙirƙirar wafers na nau'in P, yana ba da damar yin amfani da ramuka masu yawa don aikace-aikacen semiconductor na ci gaba.

Zaɓuɓɓukan Girma:
1. Akwai shi a diamita inci 2, inci 3, da inci 4. Waɗannan wafers ɗin suna biyan buƙatun fasaha daban-daban, tun daga bincike da haɓakawa zuwa manyan masana'antu.
2. Daidaiton juriyar diamita yana tabbatar da daidaito a cikin rukuni-rukuni, tare da diamita na 50.8±0.3mm (ga wafers mai inci 2) da 76.2±0.3mm (ga wafers mai inci 3).

Sarrafa Kauri:
1. Ana samun wafers ɗin da kauri na 500±5μm don ingantaccen aiki a aikace-aikace daban-daban.
2. Ana kula da ƙarin ma'auni kamar TTV (Bambancin Kauri Gabaɗaya), BOW, da Warp a hankali don tabbatar da daidaito da inganci mai kyau.

Ingancin Fuskar:
1. Wafers ɗin suna zuwa da farfajiya mai laushi/ƙarfe don inganta aikin gani da lantarki.
2. Waɗannan saman sun dace da ci gaban epitaxial, suna ba da tushe mai santsi don ƙarin sarrafawa a cikin na'urori masu aiki mai girma.

Epi-Ready:
1. Wafers ɗin InSb suna da cikakken shiri, ma'ana an riga an yi musu magani don tsarin adana epitaxial. Wannan ya sa suka dace da amfani a masana'antar semiconductor inda ake buƙatar a shuka yadudduka na epitaxial a saman wafer ɗin.

Aikace-aikace

1. Masu Gano Infrared:Ana amfani da wafers na InSb a fannin gano infrared (IR), musamman a cikin kewayon infrared na tsakiyar wavelength (MWIR). Waɗannan wafers suna da mahimmanci don ganin dare, ɗaukar hoton zafi, da aikace-aikacen infrared spectroscopy.

2. Na'urorin Lantarki Masu Sauri:Saboda yawan motsin lantarki, ana amfani da wafers na InSb a cikin na'urorin lantarki masu saurin gudu kamar transistors masu saurin gudu, na'urorin rijiyar quantum, da transistors masu saurin gudu na electron (HEMTs).

3. Na'urorin Rijiyar Quantum:Ƙananan gibin da ke tsakanin na'urorin lantarki da kuma ingantaccen motsi na lantarki sun sa wafers ɗin InSb su dace da amfani da su a cikin na'urorin rijiyar kwantum. Waɗannan na'urori sune manyan abubuwan da ke cikin na'urorin laser, na'urorin ganowa, da sauran tsarin optoelectronic.

4. Na'urorin Spintronic:Ana kuma binciken InSb a cikin aikace-aikacen spintronic, inda ake amfani da juyawar lantarki don sarrafa bayanai. Haɗin da ke tsakanin kayan da ke juyawa da juyawa ya sa ya dace da waɗannan na'urori masu aiki mai kyau.

5. Aikace-aikacen Haskoki na Terahertz (THz):Ana amfani da na'urori masu tushen InSb a aikace-aikacen radiation na THZ, gami da binciken kimiyya, hotuna, da kuma bayanin kayan aiki. Suna ba da damar fasahar zamani kamar tsarin THZ spectroscopy da tsarin daukar hoto na THZ.

6. Na'urorin Thermoelectric:Abubuwan da InSb ya keɓanta sun sa ya zama abu mai kyau ga aikace-aikacen thermoelectric, inda za a iya amfani da shi don canza zafi zuwa wutar lantarki yadda ya kamata, musamman a cikin aikace-aikacen musamman kamar fasahar sararin samaniya ko samar da wutar lantarki a cikin mawuyacin yanayi.

Sigogin Samfura

Sigogi	Inci 2	inci 3	inci 4
diamita	50.8±0.3mm	76.2±0.3mm	-
Kauri	500±5μm	650±5μm	-
saman	An goge/An sassaka	An goge/An sassaka	An goge/An sassaka
Nau'in Magungunan Doping	Ba a sha ba, Ba a sha ba (N), Ba a sha ba (P)	Ba a sha ba, Ba a sha ba (N), Ba a sha ba (P)	Ba a sha ba, Ba a sha ba (N), Ba a sha ba (P)
Hanya	(100)	(100)	(100)
Kunshin	Guda ɗaya	Guda ɗaya	Guda ɗaya
Epi-Ready	Ee	Ee	Ee

Sigogi na Wutar Lantarki don Te Doped (Nau'in N):

Motsi: 2000-5000 cm²/V·s
Juriya: (1-1000) Ω·cm
EPD (Yawan Lalacewa): ≤2000 lahani/cm²

Sigogi na Wutar Lantarki don Ge Doped (Nau'in P):

Motsi: 4000-8000 cm²/V·s
Juriya: (0.5-5) Ω·cm
EPD (Yawan Lalacewa): ≤2000 lahani/cm²

Kammalawa

Wafers ɗin Indium Antimonide (InSb) suna da matuƙar muhimmanci ga nau'ikan aikace-aikacen da suka yi fice a fannoni daban-daban na lantarki, optoelectronics, da fasahar infrared. Tare da kyakkyawan motsi na electron, haɗin kai mai sauƙi, da kuma zaɓuɓɓukan doping iri-iri (Te don nau'in N, Ge don nau'in P), wafers ɗin InSb sun dace da amfani a cikin na'urori kamar na'urorin gano infrared, transistors masu sauri, na'urorin rijiyar quantum, da na'urorin spintronic.

Ana samun wafers ɗin a girma dabam-dabam (inci 2, inci 3, da inci 4), tare da daidaitaccen tsarin sarrafa kauri da saman da aka riga aka shirya, wanda ke tabbatar da cewa sun cika buƙatun ƙera semiconductor na zamani. Waɗannan wafers ɗin sun dace da amfani a fannoni kamar gano IR, na'urorin lantarki masu sauri, da kuma hasken THZ, wanda ke ba da damar ci gaba da fasahohin bincike, masana'antu, da tsaro.