Indium Antimonide (InSb) wafers N nau'in P nau'in Epi shirye unndoped Te doped ko Ge doped 2inch 3inch 4inch kauri Indium Antimonide (InSb) wafers
Siffofin
Zaɓuɓɓukan Doping:
1. Ba a gama ba:Wadannan wafers ba su da 'yanci daga kowane nau'in doping, yana sa su dace don aikace-aikace na musamman kamar ci gaban epitaxial.
2.Te Doped (N-Type):Tellurium (Te) doping ana yawan amfani dashi don ƙirƙirar wafers na nau'in N, waɗanda suka dace don aikace-aikace kamar injin gano infrared da na'urorin lantarki masu sauri.
3.Ge Doped (P-Nau'in):Ana amfani da Germanium (Ge) doping don ƙirƙirar wafers na nau'in P, yana ba da motsi mai zurfi don aikace-aikacen semiconductor na ci gaba.
Zabuka Girma:
1. Akwai a cikin 2-inch, 3-inch, da 4-inch diamita. Waɗannan wafers suna biyan buƙatun fasaha daban-daban, daga bincike da haɓakawa zuwa manyan masana'antu.
2.Precise diamita tolerances tabbatar da daidaito a fadin batches, tare da diamita na 50.8 ± 0.3mm (ga 2-inch wafers) da kuma 76.2 ± 0.3mm (na 3-inch wafers).
Kula da kauri:
1.The wafers suna samuwa tare da kauri na 500 ± 5μm don aiki mafi kyau a cikin aikace-aikace daban-daban.
2.Ƙarin ma'auni irin su TTV (Total Thickness Variation), BOW, da Warp ana sarrafa su a hankali don tabbatar da daidaituwa da inganci.
Ingancin saman:
1.The wafers zo tare da goge / etched surface don inganta na gani da lantarki yi.
2.Wadannan saman suna da kyau don haɓaka epitaxial, suna ba da tushe mai santsi don ƙarin aiki a cikin na'urori masu mahimmanci.
Epi-Shirya:
1.The InSb wafers suna shirye-shirye, ma'ana an riga an riga an yi musu magani don hanyoyin jigilar epitaxial. Wannan ya sa su dace don aikace-aikace a masana'antar semiconductor inda ake buƙatar haɓaka yadudduka na epitaxial a saman wafer.
Aikace-aikace
1. Infrared Detectors:InSb wafers ana yawan amfani da su wajen gano infrared (IR), musamman a cikin kewayon infrared (MWIR). Wadannan wafers suna da mahimmanci don hangen nesa na dare, hoton zafi, da aikace-aikacen spectroscopy na infrared.
2. Lantarki Mai Sauri:Saboda babban motsi na lantarki, InSb wafers ana amfani da su a cikin na'urorin lantarki masu sauri irin su transistor masu saurin mita, na'urorin rijiyar ƙira, da kuma manyan transistor motsi na lantarki (HEMTs).
3. Na'urorin Rijiyar Quantum:kunkuntar bandgap da ingantaccen motsi na lantarki suna sanya wafern InSb dacewa don amfani a cikin na'urorin rijiyar adadi. Waɗannan na'urori sune mahimman abubuwan da aka haɗa a cikin na'urorin laser, ganowa, da sauran tsarin optoelectronic.
4.Spintronic Devices:Hakanan ana bincika InSb a aikace-aikacen spintronic, inda ake amfani da injin lantarki don sarrafa bayanai. Ƙarƙashin haɗaɗɗen juzu'i na kayan yana sa ya dace don waɗannan na'urori masu girma.
5.Terahertz (THz) Aikace-aikacen Radiation:Ana amfani da na'urori masu tushen InSb a aikace-aikacen radiation na THz, gami da binciken kimiyya, hoto, da halayen kayan aiki. Suna ba da damar fasahar ci gaba kamar THz spectroscopy da tsarin hoto na THz.
6. Thermoelectric Na'urorin:Abubuwan musamman na InSb sun sa ya zama abin ban sha'awa don aikace-aikacen thermoelectric, inda za'a iya amfani dashi don canza zafi zuwa wutar lantarki yadda ya kamata, musamman a aikace-aikace masu mahimmanci kamar fasahar sararin samaniya ko samar da wutar lantarki a cikin matsanancin yanayi.
Sigar Samfura
| Siga | 2 inci | 3 inci | 4 inci |
| Diamita | 50.8 ± 0.3mm | 76.2 ± 0.3mm | - |
| Kauri | 500± 5μm | 650± 5μm | - |
| Surface | Goge/Etched | Goge/Etched | Goge/Etched |
| Nau'in Doping | Undoped, Te-doped (N), Ge-doped (P) | Undoped, Te-doped (N), Ge-doped (P) | Undoped, Te-doped (N), Ge-doped (P) |
| Gabatarwa | (100) | (100) | (100) |
| Kunshin | Single | Single | Single |
| Epi-Shirya | Ee | Ee | Ee |
Ma'aunin Lantarki na Te Doped (Nau'in N):
- Motsi: 2000-5000 cm²/V·s
- Resistivity: (1-1000) Ω·cm
- EPD (Defect Density): ≤2000 lahani/cm²
Ma'aunin Lantarki na Ge Doped (Nau'in P):
- Motsi: 4000-8000 cm²/V·s
- Resistivity: (0.5-5) Ω·cm
- EPD (Defect Density): ≤2000 lahani/cm²
Kammalawa
Indium Antimonide (InSb) wafers wani abu ne mai mahimmanci don ɗimbin aikace-aikacen manyan ayyuka a fagen kayan lantarki, optoelectronics, da fasahar infrared. Tare da ingantacciyar motsin su na lantarki, ƙananan haɗin keɓaɓɓen juzu'i, da zaɓuɓɓukan doping iri-iri (Te don nau'in N-nau'in, Ge don nau'in P-type), InSb wafers sun dace don amfani da na'urori irin su na'urorin gano infrared, transistors masu saurin sauri, na'urorin rijiyar quantum, da na'urorin spintronic.
Ana samun wafers a cikin girma dabam dabam (2-inch, 3-inch, da 4-inch), tare da madaidaicin sarrafa kauri da saman shirye-shirye, yana tabbatar da cewa sun cika ƙaƙƙarfan buƙatun ƙirƙira semiconductor na zamani. Wadannan wafers cikakke ne don aikace-aikace a cikin filayen kamar gano IR, lantarki mai sauri, da radiation THz, yana ba da damar fasahar ci gaba a cikin bincike, masana'antu, da tsaro.
Cikakken zane
