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Wafer ɗin Sapphire mai inci 12 C-Plane SSP/DSP

Hoton da aka nuna mai siffar Sapphire Wafer C-Plane SSP/DSP mai inci 12
  • Wafer ɗin Sapphire mai inci 12 C-Plane SSP/DSP
  • Wafer ɗin Sapphire mai inci 12 C-Plane SSP/DSP

Takaitaccen Bayani:

Abu Ƙayyadewa
diamita Inci 2 inci 4 Inci 6 inci 8 Inci 12
Kayan Aiki Saffir na wucin gadi (Al2O3 ≥ 99.99%)
Kauri 430±15μm 650±15μm 1300±20μm 1300±20μm 3000±20μm
saman
alkiblar		 jirgin sama na c(0001)
NA tsawon 16±1mm 30±1mm 47.5±2.5mm 47.5±2.5mm *mai iya yin shawarwari
OF alkiblar jirgin sama na a-jirgin sama 0±0.3°
TV * ≦10μm ≦10μm ≦15μm ≦15μm *mai iya yin shawarwari
BOKA * -10 ~ 0μm -15 ~ 0μm -20 ~ 0μm -25 ~ 0μm *mai iya yin shawarwari
Warp * ≦15μm ≦20μm ≦25μm ≦30μm *mai iya yin shawarwari
Gefen gaba
kammalawa		 Epi-ready (Ra＜0.3nm)
Gefen baya
kammalawa		 Lapping (Ra 0.6 – 1.2μm)
Marufi Marufi na injin tsotsa a cikin ɗaki mai tsabta
Babban matsayi Tsaftacewa mai inganci: girman barbashi ≧ 0.3um), ≦ 0.18pcs/cm2, gurɓataccen ƙarfe ≦ 2E10/cm2
Bayani Bayani dalla-dalla: a/r/m-plane consultation, ba tare da kusurwa ba, siffar, goge gefe biyu

Siffofi

Cikakken Zane

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Gabatarwar Saffir

Wafer ɗin Sapphire wani abu ne mai siffar lu'ulu'u ɗaya da aka yi da sinadarin aluminum oxide mai ƙarfi (Al₂O₃). Ana noma manyan lu'ulu'u na sapphire ta amfani da hanyoyi na zamani kamar Kyropoulos (KY) ko Hanyar Musayar Zafi (HEM), sannan a sarrafa su ta hanyar yankewa, daidaitawa, niƙawa, da gogewa daidai. Saboda kyawun halayensa na zahiri, na gani, da sinadarai, wafer ɗin sapphire yana taka rawa sosai a fannin semiconductors, optoelectronics, da kuma kayan lantarki masu amfani da kayayyaki masu inganci.

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Hanyoyin Haɗa Sapphire Mainstream

Hanyar Ƙa'ida Fa'idodi Babban Aikace-aikace
Hanyar Verneuil(Haɗakar Wuta) Ana narkar da foda mai tsarki na Al₂O₃ a cikin harshen oxygen, digo-digo suna ƙarfafa Layer bayan Layer akan iri Ƙarancin farashi, inganci mai yawa, tsari mai sauƙi Sapphires masu ingancin duwatsu masu daraja, kayan gani na farko
Hanyar Czochralski (CZ) Ana narkar da Al₂O₃ a cikin wani bututun ƙarfe, kuma a hankali ana jan wani nau'in sinadari zuwa sama don ya girma lu'ulu'u. Yana samar da manyan lu'ulu'u tare da kyakkyawan inganci Gilashin Laser, tagogi masu gani
Hanyar Kyropoulos (KY) Sanyi mai sauƙi da aka sarrafa yana ba da damar lu'ulu'u ya girma a hankali a cikin bututun. Yana iya girma manyan lu'ulu'u masu girman gaske (kilogiram goma ko fiye) Abubuwan LED, allon wayar salula, abubuwan gani
Hanyar HEM(Musayar Zafi) Sanyaya yana farawa daga saman tukunya, lu'ulu'u suna girma ƙasa daga iri Yana samar da manyan lu'ulu'u (har zuwa ɗaruruwan kilogiram) tare da inganci iri ɗaya Manyan tagogi na gani, sararin samaniya, na'urorin gani na soja
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Tsarin Crystal

Hanya / Jirgin Sama Ma'aunin Miller Halaye Babban Aikace-aikace
Jirgin sama na C (0001) Daidai da axis na c, saman polar, atoms ɗin da aka shirya daidai gwargwado LED, diodes na laser, abubuwan da aka yi amfani da su a cikin GaN (wanda aka fi amfani da shi sosai)
Jirgin sama na A (11-20) Daidai da c-axis, saman da ba na polar ba, yana guje wa tasirin polarization Na'urorin lantarki na GaN marasa polar, na'urorin lantarki na optoelectronic
Jirgin sama na M (10-10) Daidai da axis na c, wanda ba shi da iyaka, kuma mai daidaituwa mai girma Na'urorin lantarki masu ƙarfi na GaN epitaxy
Jirgin sama na R (1-102) Yana karkata zuwa ga axis na c, kyawawan kaddarorin gani Tagogi masu gani, na'urorin gano infrared, kayan aikin laser

 

daidaitawar lu'ulu'u

Bayanin Wafer na Sapphire (Ana iya gyaggyara shi)

Abu Wafers ɗin Sapphire mai inci 1 (0001) 430μm
Kayan Lu'ulu'u 99,999%, Tsarkakakken Tsabta, Monocrystalline Al2O3
Matsayi Firayim, Epi-Ready
Tsarin Fuskar Jirgin sama na C(0001)
Kusurwar C-jirgin sama daga kusurwa zuwa ga axis na M 0.2 +/- 0.1°
diamita 25.4 mm +/- 0.1 mm
Kauri 430 μm +/- 25 μm
An goge Gefe Guda ɗaya Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(SSP) Bayan Fuskar Ƙasa mai kyau, Ra = 0.8 μm zuwa 1.2 μm
An goge Gefen Biyu Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(DSP) Bayan Fuskar An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
TTV < 5 μm
RUWAN BAKI < 5 μm
WARP < 5 μm
Tsaftacewa / Marufi Tsaftace ɗaki mai tsafta na aji 100 da kuma marufi na injin tsotsa,
Guda 25 a cikin fakitin kaset ɗaya ko fakitin guda ɗaya.

 

Abu Wafers ɗin Sapphire mai inci 2 (0001) 430μm
Kayan Lu'ulu'u 99,999%, Tsarkakakken Tsabta, Monocrystalline Al2O3
Matsayi Firayim, Epi-Ready
Tsarin Fuskar Jirgin sama na C(0001)
Kusurwar C-jirgin sama daga kusurwa zuwa ga axis na M 0.2 +/- 0.1°
diamita 50.8 mm +/- 0.1 mm
Kauri 430 μm +/- 25 μm
Babban Tsarin Faɗi Jirgin sama na A(11-20) +/- 0.2°
Babban Tsawon Lebur 16.0 mm +/- 1.0 mm
An goge Gefe Guda ɗaya Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(SSP) Bayan Fuskar Ƙasa mai kyau, Ra = 0.8 μm zuwa 1.2 μm
An goge Gefen Biyu Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(DSP) Bayan Fuskar An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
TTV < 10 μm
RUWAN BAKI < 10 μm
WARP < 10 μm
Tsaftacewa / Marufi Tsaftace ɗaki mai tsafta na aji 100 da kuma marufi na injin tsotsa,
Guda 25 a cikin fakitin kaset ɗaya ko fakitin guda ɗaya.
Abu Wafers ɗin Sapphire mai inci 3 (0001) 500μm
Kayan Lu'ulu'u 99,999%, Tsarkakakken Tsabta, Monocrystalline Al2O3
Matsayi Firayim, Epi-Ready
Tsarin Fuskar Jirgin sama na C(0001)
Kusurwar C-jirgin sama daga kusurwa zuwa ga axis na M 0.2 +/- 0.1°
diamita 76.2 mm +/- 0.1 mm
Kauri 500 μm +/- 25 μm
Babban Tsarin Faɗi Jirgin sama na A(11-20) +/- 0.2°
Babban Tsawon Lebur 22.0 mm +/- 1.0 mm
An goge Gefe Guda ɗaya Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(SSP) Bayan Fuskar Ƙasa mai kyau, Ra = 0.8 μm zuwa 1.2 μm
An goge Gefen Biyu Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(DSP) Bayan Fuskar An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
TTV < 15 μm
RUWAN BAKI < 15 μm
WARP < 15 μm
Tsaftacewa / Marufi Tsaftace ɗaki mai tsafta na aji 100 da kuma marufi na injin tsotsa,
Guda 25 a cikin fakitin kaset ɗaya ko fakitin guda ɗaya.
Abu Wafers ɗin Sapphire mai inci 4 (0001) 650μm
Kayan Lu'ulu'u 99,999%, Tsarkakakken Tsabta, Monocrystalline Al2O3
Matsayi Firayim, Epi-Ready
Tsarin Fuskar Jirgin sama na C(0001)
Kusurwar C-jirgin sama daga kusurwa zuwa ga axis na M 0.2 +/- 0.1°
diamita 100.0 mm +/- 0.1 mm
Kauri 650 μm +/- 25 μm
Babban Tsarin Faɗi Jirgin sama na A(11-20) +/- 0.2°
Babban Tsawon Lebur 30.0 mm +/- 1.0 mm
An goge Gefe Guda ɗaya Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(SSP) Bayan Fuskar Ƙasa mai kyau, Ra = 0.8 μm zuwa 1.2 μm
An goge Gefen Biyu Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(DSP) Bayan Fuskar An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
TTV < 20 μm
RUWAN BAKI < 20 μm
WARP < 20 μm
Tsaftacewa / Marufi Tsaftace ɗaki mai tsafta na aji 100 da kuma marufi na injin tsotsa,
Guda 25 a cikin fakitin kaset ɗaya ko fakitin guda ɗaya.
Abu Wafers ɗin Sapphire mai inci 6 (0001) 1300μm
Kayan Lu'ulu'u 99,999%, Tsarkakakken Tsabta, Monocrystalline Al2O3
Matsayi Firayim, Epi-Ready
Tsarin Fuskar Jirgin sama na C(0001)
Kusurwar C-jirgin sama daga kusurwa zuwa ga axis na M 0.2 +/- 0.1°
diamita 150.0 mm +/- 0.2 mm
Kauri 1300 μm +/- 25 μm
Babban Tsarin Faɗi Jirgin sama na A(11-20) +/- 0.2°
Babban Tsawon Lebur 47.0 mm +/- 1.0 mm
An goge Gefe Guda ɗaya Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(SSP) Bayan Fuskar Ƙasa mai kyau, Ra = 0.8 μm zuwa 1.2 μm
An goge Gefen Biyu Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(DSP) Bayan Fuskar An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
TTV < 25 μm
RUWAN BAKI < 25 μm
WARP < 25 μm
Tsaftacewa / Marufi Tsaftace ɗaki mai tsafta na aji 100 da kuma marufi na injin tsotsa,
Guda 25 a cikin fakitin kaset ɗaya ko fakitin guda ɗaya.
Abu Wafers ɗin Sapphire mai inci 8 (0001) 1300μm
Kayan Lu'ulu'u 99,999%, Tsarkakakken Tsabta, Monocrystalline Al2O3
Matsayi Firayim, Epi-Ready
Tsarin Fuskar Jirgin sama na C(0001)
Kusurwar C-jirgin sama daga kusurwa zuwa ga axis na M 0.2 +/- 0.1°
diamita 200.0 mm +/- 0.2 mm
Kauri 1300 μm +/- 25 μm
An goge Gefe Guda ɗaya Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(SSP) Bayan Fuskar Ƙasa mai kyau, Ra = 0.8 μm zuwa 1.2 μm
An goge Gefen Biyu Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(DSP) Bayan Fuskar An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
TTV < 30 μm
RUWAN BAKI < 30 μm
WARP < 30 μm
Tsaftacewa / Marufi Tsaftace ɗaki mai tsafta na aji 100 da kuma marufi na injin tsotsa,
Marufi guda ɗaya.

 

Abu Wafers ɗin Sapphire mai inci 12 (0001) 1300μm
Kayan Lu'ulu'u 99,999%, Tsarkakakken Tsabta, Monocrystalline Al2O3
Matsayi Firayim, Epi-Ready
Tsarin Fuskar Jirgin sama na C(0001)
Kusurwar C-jirgin sama daga kusurwa zuwa ga axis na M 0.2 +/- 0.1°
diamita 300.0 mm +/- 0.2 mm
Kauri 3000 μm +/- 25 μm
An goge Gefe Guda ɗaya Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(SSP) Bayan Fuskar Ƙasa mai kyau, Ra = 0.8 μm zuwa 1.2 μm
An goge Gefen Biyu Fuskar Gaba An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
(DSP) Bayan Fuskar An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM)
TTV < 30 μm
RUWAN BAKI < 30 μm
WARP < 30 μm

 

Tsarin Samar da Wafer na Sapphire

  1. Girman Crystal

    • Shuka sapphire boules (kilogiram 100–400) ta amfani da hanyar Kyropoulos (KY) a cikin tanderun girma na lu'ulu'u na musamman.

  2. Hakowa da Siffanta Ingot

    • Yi amfani da ganga mai haƙa ramin don sarrafa boule ɗin zuwa ingots masu silinda tare da diamita na inci 2-6 da tsayin mm 50-200.

  3. Farkon Rufewa

    • Duba ingots ɗin don ganin lahani kuma yi aikin farko na rage zafin jiki don rage damuwa ta ciki.

  4. Tsarin Crystal

    • Tantance ainihin yanayin da aka yi amfani da shi wajen haɗa sapphire ingot (misali, C-plane, A-plane, R-plane) ta amfani da kayan aikin daidaitawa.

  5. Yankan Gasa Mai Wayoyi Da Yawa

    • Yanka ingot ɗin zuwa siririn wafers bisa ga kauri da ake buƙata ta amfani da kayan aikin yanke waya da yawa.

  6. Dubawa na Farko & Ƙararrawa ta Biyu

    • Duba wafers ɗin da aka yanke (kauri, siffa, da lahani a saman).

    • A sake yin annealing idan ya cancanta don ƙara inganta ingancin lu'ulu'u.

  7. Yin Chamfering, Nika & CMP Polishing

    • Yi chamfering, surface niƙa, da kuma polishing na injiniyanci (CMP) tare da kayan aiki na musamman don cimma saman madubi.

  8. Tsaftacewa

    • A tsaftace wafers sosai ta amfani da ruwa mai tsarki da sinadarai a cikin ɗaki mai tsafta don cire barbashi da gurɓatattun abubuwa.

  9. Dubawar gani da ta jiki

    • Gudanar da gano bayanai ta hanyar sadarwa da kuma yin rikodin bayanai ta hanyar gani.

    • Auna sigogin wafer waɗanda suka haɗa da TTV (Bambancin Kauri Gabaɗaya), Baka, Warp, daidaiton yanayin daidaitawa, da kuma rashin kyawun saman.

  10. Shafawa (Zaɓi ne)

  • A shafa shafa (misali, shafa AR, yadudduka masu kariya) bisa ga ƙa'idodin abokin ciniki.

  1. Dubawa na Ƙarshe & Marufi

  • Yi duba inganci 100% a cikin ɗaki mai tsafta.

  • A sanya wafers a cikin akwatunan kaset a ƙarƙashin yanayin tsafta na Class-100 sannan a rufe su da injin tsotsar ruwa kafin a kawo su.

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Amfani da Wafers ɗin Sapphire

Ana amfani da wafers ɗin Sapphire, tare da taurinsu na musamman, ingantaccen watsa haske, kyakkyawan aikin zafi, da kuma rufin lantarki, a fannoni daban-daban. Aikace-aikacensu ba wai kawai ya shafi masana'antar LED da optoelectronic na gargajiya ba, har ma yana faɗaɗa zuwa semiconductors, na'urorin lantarki na mabukaci, da kuma fannoni na tsaro na sararin samaniya da na tsaro.

1. Semiconductor da Optoelectronics

Abubuwan LED
Wafers ɗin Sapphire sune manyan abubuwan da ke haifar da haɓakar gallium nitride (GaN), waɗanda ake amfani da su sosai a cikin fitilun shuɗi, fitilun fari, da fasahar Mini/Micro LED.

Diodes na Laser (LDs)
A matsayin abubuwan da ke cikin diodes na laser da ke tushen GaN, wafers na sapphire suna tallafawa haɓaka na'urorin laser masu ƙarfi da tsawon rai.

Masu daukar hoto
A cikin na'urorin gano hasken ultraviolet da infrared, ana amfani da wafers ɗin sapphire a matsayin tagogi masu haske da kuma abubuwan da ke rufewa.

2. Na'urorin Semiconductor

RFICs (Da'irori Masu Haɗaka na Mitar Rediyo)
Godiya ga kyakkyawan rufin wutar lantarki, wafers ɗin sapphire sun dace da na'urorin microwave masu yawan mita da ƙarfi.

Fasahar Silicon-on-Sapphire (SoS)
Ta hanyar amfani da fasahar SoS, ƙarfin parasitic capacitance zai iya raguwa sosai, yana ƙara aikin da'ira. Ana amfani da wannan sosai a cikin sadarwa ta RF da na'urorin lantarki na sararin samaniya.

3. Aikace-aikacen gani

Tagogin Tantancewa Masu Infrared
Tare da yawan watsawa a cikin kewayon tsawon tsayin 200 nm zuwa 5000 nm, ana amfani da sapphire sosai a cikin na'urorin gano infrared da tsarin jagorar infrared.

Tagogi Masu Ƙarfin Lasisa Masu Kyau
Taurin da juriyar zafi na saffir sun sanya shi kyakkyawan kayan kariya ga tagogi da ruwan tabarau a cikin tsarin laser mai ƙarfi.

4. Kayan Lantarki na Masu Amfani

Murfin Ruwan tabarau na Kamara
Babban taurin sapphire yana tabbatar da juriya ga karce ga wayoyin komai da ruwan tabarau na kyamara.

Firikwensin Zane-zanen Yatsa
Wafers ɗin Sapphire na iya zama murfin da ke da ɗorewa, mai haske wanda ke inganta daidaito da aminci wajen gane sawun yatsa.

Agogon Smart da Nunin Premium
Allon Sapphire yana haɗa juriyar karce da haske mai kyau, wanda hakan ke sa su shahara a cikin samfuran lantarki masu inganci.

5. Tashar Jiragen Sama da Tsaro

Kumbon Infrared mai linzami
Tagogin Sapphire suna kasancewa masu haske da kwanciyar hankali a ƙarƙashin yanayi mai zafi da sauri.

Tsarin Tantancewar Samaniya
Ana amfani da su a cikin tagogi masu ƙarfi da kayan aikin lura waɗanda aka tsara don yanayi mai tsauri.

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Sauran Kayayyakin Sapphire Na Yau Da Kullum

Kayayyakin gani

  • Tagogi Masu Haske na Sapphire

    • Ana amfani da shi a cikin na'urorin laser, spectrometers, tsarin daukar hoto na infrared, da tagogi masu firikwensin.

    • Kewayon watsawa:UV 150 nm zuwa tsakiyar IR 5.5 μm.

  • Ruwan tabarau na Sapphire

    • Ana amfani da shi a cikin tsarin laser mai ƙarfi da na'urorin gani na sararin samaniya.

    • Ana iya yin ruwan tabarau a cikin nau'in convex, concave, ko cylindrical.

  • Prims ɗin Sapphire

    • Ana amfani da shi a cikin kayan aikin aunawa na gani da tsarin ɗaukar hoto daidai.

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Tashar Jiragen Sama da Tsaro

  • Domes na Sapphire

    • Kare masu neman infrared a cikin makamai masu linzami, jiragen sama marasa matuƙa, da jiragen sama.

  • Murfin Kariyar Sapphire

    • Jure wa tasirin iska mai sauri da kuma yanayi mai tsauri.

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Marufin Samfura

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Game da XINKEHUI

Kamfanin Shanghai Xinkehui New Material Co., Ltd yana ɗaya daga cikin kamfanonin da ke samar da kayayyaki a ƙasar.mafi girman mai samar da na'urar gani da semiconductor a ChinaAn kafa XKH a shekarar 2002. An ƙirƙiro XKH ne don samar wa masu bincike na ilimi wafers da sauran kayan kimiyya da ayyuka masu alaƙa da semiconductor. Kayan Semiconductor babban kasuwancinmu ne, ƙungiyarmu ta dogara ne akan fasaha, tun lokacin da aka kafa ta, XKH tana da hannu sosai a cikin bincike da haɓaka kayan lantarki na zamani, musamman a fannin wafer/substrate daban-daban.

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Abokan hulɗa

Tare da kyakkyawar fasahar kayan semiconductor, Shanghai Zhimingxin ta zama amintaccen abokin tarayya na manyan kamfanoni da cibiyoyin ilimi na duniya. Tare da dagewa a cikin kirkire-kirkire da ƙwarewa, Zhimingxin ta kafa kyakkyawar alaƙar haɗin gwiwa da shugabannin masana'antu kamar Schott Glass, Corning, da Seoul Semiconductor. Waɗannan haɗin gwiwar ba wai kawai sun inganta matakin fasaha na samfuranmu ba, har ma sun haɓaka ci gaban fasaha a fannoni na lantarki mai amfani da wutar lantarki, na'urorin optoelectronic, da na'urorin semiconductor.

Baya ga haɗin gwiwa da kamfanoni masu shahara, Zhimingxin ya kuma kafa dangantakar haɗin gwiwa ta dogon lokaci tsakanin bincike da manyan jami'o'i a duniya kamar Jami'ar Harvard, Kwalejin Jami'ar London (UCL), da Jami'ar Houston. Ta hanyar waɗannan haɗin gwiwar, Zhimingxin ba wai kawai yana ba da tallafin fasaha ga ayyukan binciken kimiyya a fannin ilimi ba, har ma yana shiga cikin haɓaka sabbin kayayyaki da sabbin fasahohi, yana tabbatar da cewa koyaushe muna kan gaba a masana'antar semiconductor.

Ta hanyar haɗin gwiwa da waɗannan kamfanoni da cibiyoyin ilimi masu shahara a duniya, Shanghai Zhimingxin ta ci gaba da haɓaka kirkire-kirkire da haɓaka fasaha, tana samar da kayayyaki da mafita na duniya don biyan buƙatun kasuwar duniya da ke ƙaruwa.

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    • Kayayyaki Masu Alaƙa

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