HPSI SiCOI wafer 4 6 inch Hydropholic Bonding

Takaitaccen Bayani:

Babban-tsarki Semi-insulating (HPSI) 4H-SiCOI wafers ana haɓaka ta amfani da ci-gaba na haɗin gwiwa da fasaha na bakin ciki. An ƙirƙira wafers ta hanyar haɗa 4H HPSI silicon carbide substrates akan yadudduka na thermal oxide ta hanyoyi guda biyu: haɗin hydrophilic (kai tsaye) da haɗin haɗin kai. Ƙarshen yana gabatar da matsakaicin gyare-gyaren Layer (kamar amorphous silicon, aluminum oxide, ko titanium oxide) don inganta haɗin haɗin gwiwa da rage kumfa, musamman dacewa da aikace-aikacen gani. Ana samun ikon sarrafa kauri na siliki carbide Layer ta hanyar ion na tushen SmartCut ko niƙa da tsarin gogewar CMP. SmartCut yana ba da daidaituwar kauri mai tsayi (50nm-900nm tare da ± 20nm daidaito) amma yana iya haifar da ɗan lalacewar crystal saboda shigar da ion, yana shafar aikin na'urar gani. Nika da gogewar CMP suna guje wa lalacewar kayan abu kuma an fi so don fina-finai masu kauri (350nm-500µm) da adadi ko aikace-aikacen PIC, kodayake tare da ƙarancin kauri (± 100nm). Matsakaicin 6-inch wafers suna da 1µm ± 0.1µm SiC Layer akan 3µm SiO2 Layer a saman 675µm Si substrates tare da santsi na musamman (Rq <0.2nm). Waɗannan wafers na HPSI SiCOI suna ba da sabis ga MEMS, PIC, ƙididdiga, da masana'anta na gani tare da ingantattun kayan inganci da sassauƙar tsari.

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SiCOI Wafer (Silicon Carbide-on-Insulator) Bayanin Kaddarorin

SiCOI wafers sabon ƙarni ne na semiconductor substrate wanda ke haɗa Silicon Carbide (SiC) tare da rufin insulating, sau da yawa SiO₂ ko sapphire, don haɓaka aiki a cikin wutar lantarki, RF, da photonics. A ƙasa akwai cikakken bayyani game da kaddarorinsu da aka karkasa zuwa mahimman sassan:

Dukiya	Bayani
Abun Haɗin Kai	Silicon Carbide (SiC) Layer da aka haɗe a kan abin rufe fuska (yawanci SiO₂ ko sapphire)
Tsarin Crystal	Yawanci nau'ikan nau'ikan nau'ikan 4H ko 6H na SiC, waɗanda aka sani don ingancin kristal da daidaito
Abubuwan Lantarki	Babban filin lantarki na rushewa (~ 3 MV / cm), babban bandgap (~ 3.26 eV don 4H-SiC), ƙarancin yabo na yanzu
Thermal Conductivity	Babban haɓakar thermal (~ 300 W / m · K), yana ba da damar watsawar zafi mai inganci
Dielectric Layer	Insulating Layer (SiO₂ ko sapphire) yana ba da keɓewar wutar lantarki kuma yana rage ƙarfin parasitic.
Kayayyakin Injini	Babban taurin (~ 9 Mohs sikelin), kyakkyawan ƙarfin injiniya, da kwanciyar hankali na thermal
Ƙarshen Sama	Yawanci mai laushi mai laushi tare da ƙarancin ƙarancin lahani, dace da ƙirƙira na'urar
Aikace-aikace	Wutar lantarki, na'urorin MEMS, na'urorin RF, na'urori masu auna firikwensin da ke buƙatar babban zafin jiki da haƙurin ƙarfin lantarki

SiCOI wafers (Silicon Carbide-on-Insulator) wakiltar wani ci-gaba na semiconductor substrate tsarin, wanda ya kunshi wani high quality-ingacin Layer na silicon carbide (SiC) bonded uwa insulating Layer, yawanci silicon dioxide (SiO₂) ko sapphire. Silicon carbide ne mai fadi-bandgap semiconductor sananne ga iya jure high voltages da kuma high zafin jiki, tare da kyakkyawan thermal conductivity da kuma m inji, sa shi manufa domin high-ikon, high-mita, da kuma high-zafi aikace-aikace lantarki.

Layer na insulating a cikin wafers na SiCOI yana ba da ingantaccen keɓewar lantarki, yana rage ƙarfin ƙarfin parasitic da kwararar ruwa tsakanin na'urori, ta haka yana haɓaka aikin na'urar gabaɗaya da aminci. An goge saman wafer daidai don cimma daidaito mai kyau tare da ƙarancin lahani, biyan buƙatun ƙirƙira ƙananan na'urori masu ƙirƙira da nano-nano.

Wannan tsarin kayan aiki ba kawai yana inganta halayen lantarki na na'urorin SiC ba amma har ma yana haɓaka sarrafa zafi da kwanciyar hankali na inji. A sakamakon haka, ana amfani da wafers na SiCOI sosai a cikin na'urorin lantarki, abubuwan mitar rediyo (RF), na'urori masu auna firikwensin microelectromechanical (MEMS), da na'urorin lantarki masu zafi. Gabaɗaya, wafers na SiCOI sun haɗu da keɓaɓɓen kaddarorin jiki na silicon carbide tare da fa'idodin keɓewar lantarki na Layer insulator, yana ba da ingantaccen tushe don ƙarni na gaba na na'urorin semiconductor na gaba.

Aikace-aikacen wafer na SiCOI

Na'urorin Wutar Lantarki

Maɗaukaki masu ƙarfi da ƙarfin ƙarfi, MOSFETs, da diodes

Fa'ida daga faffadan bandgap na SiC, babban ƙarfin wutar lantarki, da kwanciyar hankali na zafi

Rage asarar wutar lantarki da ingantaccen aiki a tsarin jujjuya wutar lantarki

Abubuwan Mitar Rediyo (RF).

Babban mitar transistor da amplifiers

Ƙananan ƙarfin ƙarfin parasitic saboda rufin rufi yana haɓaka aikin RF

Ya dace da tsarin sadarwar 5G da tsarin radar

Tsarin Microelectromechanical Systems (MEMS)

Na'urori masu auna firikwensin da masu kunna wuta da ke aiki a cikin yanayi mara kyau

Ƙarfin injina da rashin kuzarin sinadarai yana ƙara tsawon rayuwar na'urar

Ya haɗa da firikwensin matsa lamba, accelerometers, da gyroscopes

Babban Zazzabi Electronics

Kayan lantarki don motoci, sararin samaniya, da aikace-aikacen masana'antu

Yi aiki da dogaro a yanayin zafi mai tsayi inda silicon ya gaza

Na'urorin Photonic

Haɗin kai tare da abubuwan haɗin optoelectronic akan abubuwan insulator

Yana ba da damar ɗaukar hoto akan-chip tare da ingantacciyar sarrafa zafi

Q&A na SiCOI wafer

Tambaya:menene SiCOI wafer

A:SiCOI wafer yana nufin Silicon Carbide-on-Insulator wafer. Wani nau'i ne na substrate na semiconductor inda wani bakin ciki Layer na silicon carbide (SiC) ke haɗe a kan wani rufi mai rufewa, yawanci silicon dioxide (SiO₂) ko wani lokacin sapphire. Wannan tsarin yana kama da ra'ayi zuwa sanannun Silicon-on-Insulator (SOI) wafers amma yana amfani da SiC maimakon silicon.