HPSI SiC wafer dia: 3inch kauri: 350um ± 25 µm don Lantarki na Wutar Lantarki
Aikace-aikace
Ana amfani da wafers na HPSI SiC a cikin kewayon aikace-aikacen lantarki da yawa, gami da:
Semiconductors na Wuta:Ana amfani da wafers na SiC a cikin samar da diodes mai ƙarfi, transistor (MOSFETs, IGBTs), da thyristors. Wadannan semiconductor ana amfani da su sosai a aikace-aikacen canza wutar lantarki waɗanda ke buƙatar ingantaccen aiki da aminci, kamar a cikin injinan masana'antu, samar da wutar lantarki, da inverters don tsarin makamashi mai sabuntawa.
Motocin Lantarki (EVs):A cikin motocin lantarki na lantarki, na'urorin wutar lantarki na tushen SiC suna ba da saurin sauyawa da sauri, ingantaccen ƙarfin kuzari, da rage asarar zafi. Abubuwan SiC suna da kyau don aikace-aikace a cikin tsarin sarrafa baturi (BMS), kayan aikin caji, da caja kan jirgi (OBCs), inda rage girman nauyi da haɓaka ƙarfin jujjuyawar kuzari yana da mahimmanci.
Tsarin Makamashi Mai Sabuntawa:Ana ƙara amfani da wafers na SiC a cikin inverters na hasken rana, injin injin injin iska, da tsarin ajiyar makamashi, inda babban inganci da ƙarfi ke da mahimmanci. Abubuwan da ke tushen SiC suna ba da damar ƙarfin ƙarfin ƙarfi da haɓaka aiki a cikin waɗannan aikace-aikacen, haɓaka ingantaccen jujjuya makamashi gabaɗaya.
Kayan Wutar Lantarki na Masana'antu:A cikin manyan aikace-aikacen masana'antu, irin su tuƙi, injiniyoyi, da manyan kayan wutar lantarki, amfani da wafers na SiC yana ba da damar ingantaccen aiki dangane da inganci, aminci, da kula da thermal. Na'urorin SiC na iya ɗaukar manyan mitoci masu sauyawa da yanayin zafi mai girma, yana sa su dace da mahalli masu buƙata.
Cibiyoyin Sadarwa da Cibiyoyin Bayanai:Ana amfani da SiC a cikin samar da wutar lantarki don kayan aikin sadarwa da cibiyoyin bayanai, inda babban abin dogaro da ingantaccen canjin wutar lantarki ke da mahimmanci. Na'urorin wutar lantarki na tushen SiC suna ba da damar yin aiki mafi girma a ƙananan masu girma dabam, wanda ke fassara zuwa rage yawan amfani da wutar lantarki da ingantacciyar yanayin sanyaya a cikin manyan abubuwan more rayuwa.
Babban ƙarfin rugujewar wutar lantarki, ƙarancin juriya, da ingantaccen ƙarfin wutar lantarki na SiC wafers ya sa su zama madaidaicin madaidaicin ga waɗannan aikace-aikacen ci gaba, yana ba da damar haɓaka na'urorin lantarki masu inganci na gaba na gaba.
Kayayyaki
| Dukiya | Daraja |
| Wafer Diamita | 3 inci (76.2 mm) |
| Kauri Wafer | 350 µm ± 25 µm |
| Wafer Orientation | <0001> kan-axis ± 0.5° |
| Maƙarƙashiya Maɗaukaki (MPD) | ≤ 1 cm² |
| Juriya na Lantarki | ≥ 1E7 Ω·cm |
| Dopant | An kwance |
| Hannun Filayen Firamare | {11-20} ± 5.0° |
| Tsawon Fitowa na Farko | 32.5 mm ± 3.0 mm |
| Tsawon Lantarki na Sakandare | 18.0 mm ± 2.0 mm |
| Gabatarwar Flat na Sakandare | Si Fuska: 90° CW daga firamare lebur ± 5.0° |
| Ƙarƙashin Ƙarfi | 3 mm ku |
| LTV/TTV/Baka/Warp | 3 µm / 10 µm / ± 30 µm / 40 µm |
| Tashin Lafiya | C-fuska: goge, Si-fuska: CMP |
| Cracks (ana duba shi ta hanyar babban tsananin haske) | Babu |
| Hex Plates (wanda aka bincika ta babban haske mai ƙarfi) | Babu |
| Wuraren Polytype (ana duba ta wurin babban haske mai ƙarfi) | Yankin tarawa 5% |
| Scratches (ana duba ta wurin babban tsananin haske) | ≤ 5 scratches, tara tsawon ≤ 150 mm |
| Chipping Edge | Babu wanda aka halatta ≥ 0.5 mm faɗi da zurfin |
| Lalacewar saman (ana duba ta wurin babban haske mai ƙarfi) | Babu |
Mabuɗin Amfani
Babban Haɓaka Zazzabi:SiC wafers an san su da keɓaɓɓen ikon su na watsar da zafi, wanda ke ba da damar na'urorin wutar lantarki suyi aiki a mafi girman inganci kuma suna ɗaukar igiyoyi masu girma ba tare da yin zafi ba. Wannan fasalin yana da mahimmanci a cikin wutar lantarki inda sarrafa zafi ya kasance babban kalubale.
Babban Rushewar Wutar Lantarki:Faɗin bandgap na SiC yana ba na'urori damar jure wa matakan ƙarfin lantarki mafi girma, yana mai da su manufa don aikace-aikacen babban ƙarfin lantarki kamar grid ɗin wuta, motocin lantarki, da injunan masana'antu.
Babban inganci:Haɗuwa da mitoci masu yawa da ƙananan juriya a cikin na'urori tare da ƙarancin asarar makamashi, inganta ingantaccen juzu'i na jujjuya wutar lantarki da rage buƙatar tsarin sanyaya mai rikitarwa.
Dogaro a cikin Muhalli masu Harsh:SiC yana da ikon yin aiki a yanayin zafi mai girma (har zuwa 600 ° C), wanda ya sa ya dace don amfani a cikin mahallin da zai lalata na'urorin tushen silicon na gargajiya.
Ajiye Makamashi:Na'urorin wutar lantarki na SiC suna haɓaka haɓakar canjin makamashi, wanda ke da mahimmanci wajen rage yawan amfani da wutar lantarki, musamman a cikin manyan tsare-tsare kamar masu sauya wutar lantarki, motocin lantarki, da abubuwan sabunta makamashi.
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