GaN akan Gilashin 4-inch: Zaɓuɓɓukan Gilashin da za a iya gyarawa gami da JGS1, JGS2, BF33, da Ma'adini na yau da kullun
Siffofin
●Mai Faɗi:GaN yana da bandgap na 3.4 eV, wanda ke ba da damar yin aiki mafi girma da ƙarfi a ƙarƙashin babban ƙarfin lantarki da yanayin zafi idan aka kwatanta da kayan semiconductor na gargajiya kamar silicon.
● Abubuwan Gilashin da za a iya gyarawa:Akwai tare da JGS1, JGS2, BF33, da Talakawa Zaɓuɓɓukan gilashin Quartz don biyan buƙatun aikin thermal, inji, da na gani daban-daban.
●Maɗaukakin Ƙarfafa Ƙarfafawa:Babban haɓakar zafin jiki na GaN yana tabbatar da haɓakar zafi mai inganci, yana sa waɗannan wafers suka dace don aikace-aikacen wutar lantarki da na'urori waɗanda ke haifar da zafi mai zafi.
●Babban Rushewar Wutar Lantarki:Ƙarfin GaN don ɗora manyan wutar lantarki ya sa waɗannan wafers suka dace da transistor wuta da aikace-aikacen mitoci masu girma.
●Kyakkyawan Ƙarfin Injini:Gilashin gilashin, haɗe tare da kayan GaN, suna ba da ƙarfin injina mai ƙarfi, yana haɓaka dorewar wafer a cikin wuraren da ake buƙata.
●Rage farashin masana'anta:Idan aka kwatanta da na gargajiya na GaN-on-Silicon ko GaN-on-Sapphire wafers, GaN-on-glass shine mafita mai inganci mai tsada don samar da manyan na'urori masu inganci.
● Abubuwan da aka Keɓance na gani:Zaɓuɓɓukan gilashi daban-daban suna ba da izini don gyare-gyaren halayen gani na wafer, yana sa ya dace da aikace-aikace a cikin optoelectronics da photonics.
Ƙididdiga na Fasaha
| Siga | Daraja |
| Girman Wafer | 4 inci |
| Zaɓuɓɓukan Substrate Glass | JGS1, JGS2, BF33, Ma'adini na Al'ada |
| GaN Layer Kauri | 100nm - 5000nm (wanda za'a iya canzawa) |
| GaN Bandgap | 3.4 eV (fadi bandgap) |
| Rushewar Wutar Lantarki | Har zuwa 1200V |
| Thermal Conductivity | 1.3 - 2.1 W/cm·K |
| Motsin Wutar Lantarki | 2000 cm²/V·s |
| Wafer Surface Roughness | RMS ~ 0.25 nm (AFM) |
| GaN Sheet Resistance | 437.9 Ω · cm² |
| Resistivity | Semi-insulating, N-type, P-type (na al'ada) |
| Watsawar gani | > 80% don bayyane da tsayin raƙuman UV |
| Wayar Warp | <25 µm (mafi girma) |
| Ƙarshen Sama | SSP ( goge-goge-gefe ɗaya) |
Aikace-aikace
Optoelectronics:
GaN-on-glass wafers ana amfani da su sosai a cikiLEDskumaLaser diodessaboda babban inganci da aikin gani na GaN. Ikon zaɓar abubuwan gilashin kamarFarashin JGS1kumaFarashin JGS2yana ba da damar gyare-gyare a cikin fayyace na gani, yana sa su dace don babban iko, haske mai haskeLEDs blue/korekumaLaser UV.
Photonics:
GaN-on-glass wafers sun dace damasu daukar hoto, Hanyoyin haɗin kai na photonic (PICs), kumana'urori masu auna firikwensin gani. Kyawawan kaddarorin watsa hasken su da babban kwanciyar hankali a cikin aikace-aikacen mitoci masu yawa sun sa su dace da susadarwakumafasahar firikwensin.
Kayan Wutar Lantarki:
Saboda faffadan bandgap ɗinsu da babban ƙarfin rushewar wutar lantarki, ana amfani da wafers ɗin GaN-on-gilasi atransistor masu ƙarfikumajujjuyawar wutar lantarki mai girma. Ƙarfin GaN don ɗaukar manyan ƙarfin lantarki da ɓarnawar thermal ya sa ya zama cikakke gaikon amplifiers, RF ikon transistor, kumawutar lantarkia cikin masana'antu da aikace-aikacen mabukaci.
Aikace-aikace Mai Girma:
GaN-on-glass wafers suna nuna kyau kwaraimotsi na lantarkikuma yana iya aiki a babban saurin sauyawa, yana sa su dace da suna'urorin wutar lantarki masu ƙarfi, na'urorin microwave, kumaRF amplifiers. Waɗannan abubuwa ne masu mahimmanci a cikiTsarin sadarwa na 5G, tsarin radar, kumasadarwar tauraron dan adam.
Aikace-aikacen Mota:
GaN-on-glass kuma ana amfani da wafers a tsarin wutar lantarki, musamman a cikiCaja na kan jirgi (OBCs)kumaDC-DC masu canzawadon motocin lantarki (EVs). Ikon wafers don ɗaukar yanayin zafi mai girma da ƙarfin lantarki yana ba su damar amfani da su a cikin wutar lantarki don EVs, suna ba da inganci da aminci.
Na'urorin likitanci:
Kaddarorin GaN kuma sun sa ya zama abin ban sha'awa don amfani a cikihoto na likitakumana'urori masu auna yanayin halitta. Ƙarfinsa na aiki a babban ƙarfin lantarki da juriya ga radiation ya sa ya dace don aikace-aikace a cikikayan aikin bincikekumalikita Laser.
Tambaya&A
Q1: Me yasa GaN-on-gilasi shine kyakkyawan zaɓi idan aka kwatanta da GaN-on-Silicon ko GaN-on-Sapphire?
A1:GaN-on-glass yana ba da fa'idodi da yawa, gami datsada-tasirikumamafi kyawun kulawar thermal. Duk da yake GaN-on-Silicon da GaN-on-Sapphire suna ba da kyakkyawan aiki, abubuwan gilashin suna da rahusa, mafi sauƙin samuwa, kuma ana iya daidaita su cikin sharuddan kayan gani da injiniyoyi. Bugu da ƙari, GaN-on-glass wafers suna ba da kyakkyawan aiki a duka biyunna ganikumaaikace-aikacen lantarki masu ƙarfi.
Q2: Menene bambanci tsakanin JGS1, JGS2, BF33, da kuma zabin gilashin ma'adini na al'ada?
A2:
- Farashin JGS1kumaFarashin JGS2babban ingancin gilashin gilashin da aka sani da subabban ingancin ganikumaƙananan haɓakar thermal, yana sa su dace da na'urorin photonic da optoelectronic.
- BF33gilashin tayimafi girma refractive indexkuma ya dace don aikace-aikacen da ke buƙatar ingantaccen aikin gani, kamarLaser diodes.
- Quartz na yau da kullunyana bada highthermal kwanciyar hankalikumajuriya ga radiation, yana sa ya dace da aikace-aikacen yanayi mai zafi da zafi.
Q3: Zan iya siffanta juriya da nau'in doping don wafers-kan gilashin GaN?
A3:Ee, muna bayarwacustomizable resistivitykumanau'in doping(nau'in N ko nau'in P) don wafers na GaN-kan-gilashi. Wannan sassauci yana ba da damar wafers don dacewa da takamaiman aikace-aikace, gami da na'urorin wuta, LEDs, da tsarin hoto.
Q4: Menene aikace-aikace na yau da kullun don GaN-on-gilasi a cikin optoelectronics?
A4:A cikin optoelectronics, GaN-on-glass wafers ana amfani da su akai-akai donLEDs blue da kore, Laser UV, kumamasu daukar hoto. Abubuwan da za a iya daidaita su na gilashin suna ba da damar na'urori masu girmawatsa haske, yin su manufa domin aikace-aikace anuni fasahar, haskakawa, kumatsarin sadarwa na gani.
Q5: Ta yaya GaN-on-gilasi ke yi a aikace-aikace masu girma?
A5:GaN-on-glass wafers tayinm electron motsi, ba su damar yin aiki mai kyau a cikiaikace-aikace masu yawakamarRF amplifiers, na'urorin microwave, kumaTsarin sadarwa na 5G. Babban rushewar wutar lantarki da ƙarancin canji ya sa su dace da suna'urorin RF masu ƙarfi.
Q6: Menene ma'anar rushewar wutar lantarki na GaN-on-glass wafers?
A6:GaN-on-glass wafers yawanci suna goyan bayan rushewar wutar lantarki har zuwa1200V, sanya su dace dababban ikokumababban ƙarfin lantarkiaikace-aikace. Faɗin bandgap ɗin su yana ba su damar ɗaukar manyan ƙarfin lantarki fiye da na yau da kullun na semiconductor kamar silicon.
Q7: Za a iya amfani da wafers na GaN-on-gilashi a aikace-aikacen mota?
A7:Ee, ana amfani da wafers na GaN a cikina'urorin lantarki na mota, ciki har daDC-DC masu canzawakumacaja a kan jirgi(OBCs) don motocin lantarki. Ikon yin aiki a yanayin zafi mai girma da kuma ɗaukar manyan ƙarfin wuta ya sa su dace don waɗannan aikace-aikacen da ake buƙata.
Kammalawa
GaN ɗin mu akan Gilashin 4-inch Wafers yana ba da mafita na musamman kuma wanda za'a iya daidaita shi don aikace-aikace iri-iri a cikin optoelectronics, wutar lantarki, da photonics. Tare da zaɓuɓɓukan gilashin gilashin kamar JGS1, JGS2, BF33, da ma'adini na yau da kullun, waɗannan wafers suna ba da haɓakawa a cikin duka kayan aikin injiniya da na gani, suna ba da damar keɓaɓɓen mafita don babban iko da na'urori masu ƙarfi. Ko don LEDs, diodes Laser, ko aikace-aikacen RF, GaN-on-glass wafers
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