GaN-on-Diamond Wafers 4inch 6inch Total epi kauri (micron) 0.6 ~ 2.5 ko kuma na musamman don Manyan Aikace-aikace

Takaitaccen Bayani:

GaN-on-Diamond wafers wani ci-gaba bayani ne na kayan da aka ƙera don mitoci, babban ƙarfi, da aikace-aikace masu inganci, suna haɗa kyawawan kaddarorin Gallium Nitride (GaN) tare da keɓaɓɓen sarrafa yanayin zafi na Diamond. Ana samun waɗannan wafers a cikin diamita 4-inch da 6-inch, tare da kaurin epi Layer ɗin da za a iya gyarawa daga 0.6 zuwa 2.5 microns. Wannan haɗin yana ba da ɓarkewar zafi mai ƙarfi, ƙarfin ƙarfi mai ƙarfi, da kyakkyawan aiki mai ƙarfi, yana sa su dace don aikace-aikace kamar na'urori masu ƙarfi na RF, radar, tsarin sadarwa na microwave, da sauran na'urorin lantarki masu inganci.


Cikakken Bayani

Tags samfurin

Kayayyaki

Girman Wafer:
Akwai shi a cikin diamita 4-inch da 6-inch don haɗaɗɗen haɗin kai cikin matakai daban-daban na masana'antar semiconductor.
Zaɓuɓɓukan keɓancewa akwai don girman wafer, dangane da buƙatun abokin ciniki.

Kaurin Layer Epitaxial:
Range: 0.6 µm zuwa 2.5 µm, tare da zaɓuɓɓuka don kauri na musamman dangane da takamaiman bukatun aikace-aikacen.
An tsara Layer epitaxial don tabbatar da haɓakar GaN crystal mai inganci, tare da ingantaccen kauri don daidaita ƙarfi, amsa mitar, da sarrafa zafi.

Ƙarfafa Ƙarfafawa:
Layin lu'u-lu'u yana ba da ƙayyadaddun ƙayyadaddun yanayin zafi na kusan 2000-2200 W/m·K, yana tabbatar da ingantaccen zafi daga na'urori masu ƙarfi.

Abubuwan Abubuwan GaN:
Wide Bandgap: GaN Layer yana amfana daga faffadan bandgap (~ 3.4 eV), wanda ke ba da damar yin aiki a cikin yanayi mara kyau, babban ƙarfin lantarki, da yanayin zafi mai zafi.
Motsin Wutar Lantarki: Babban motsi na lantarki (kimanin 2000 cm²/V·s), yana haifar da saurin sauyawa da mafi girman mitocin aiki.
Babban Rushewar Wutar Lantarki: Ƙarƙashin wutar lantarki na GaN ya fi kayan aikin semiconductor na al'ada, yana mai da shi dacewa da aikace-aikace masu ƙarfi.

Ayyukan Wutar Lantarki:
Ƙarfin Ƙarfin Ƙarfi: GaN-on-Diamond wafers yana ba da damar samar da wutar lantarki mai girma yayin da yake riƙe da ƙananan nau'i, cikakke ga masu haɓaka wutar lantarki da tsarin RF.
Ƙananan Asarar: Haɗin ingancin GaN da ɗumbin zafi na lu'u-lu'u yana haifar da ƙananan asarar wutar lantarki yayin aiki.

Ingancin saman:
Babban Ingantacciyar Ci gaban Epitaxial: Layer GaN yana girma sosai akan ma'aunin lu'u-lu'u, yana tabbatar da ƙarancin rarrabuwar kawuna, babban ingancin crystalline, da ingantaccen aikin na'ura.

Daidaituwa:
Kauri da Haɗin Haɗin Kai: Duka Layer GaN da madaidaicin lu'u-lu'u suna kiyaye ingantacciyar daidaituwa, mahimmanci don daidaiton aikin na'urar da aminci.

Tsabar Sinadarai:
Dukansu GaN da lu'u-lu'u suna ba da daidaiton sinadarai na musamman, suna barin waɗannan wafers su yi dogaro da gaske a cikin mahallin sinadarai masu tsauri.

Aikace-aikace

RF Power Amplifiers:
GaN-on-Diamond wafers suna da kyau ga masu haɓaka ƙarfin RF a cikin sadarwa, tsarin radar, da sadarwar tauraron dan adam, suna ba da babban inganci da aminci a manyan mitoci (misali, 2 GHz zuwa 20 GHz da ƙari).

Sadarwar Microwave:
Waɗannan wafers sun yi fice a cikin tsarin sadarwa na microwave, inda babban ƙarfin fitarwa da ƙarancin lalata sigina ke da mahimmanci.

Fasahar Radar da Sensing:
GaN-on-Diamond wafers ana amfani da su sosai a cikin tsarin radar, suna ba da aiki mai ƙarfi a cikin aikace-aikace masu ƙarfi da ƙarfi, musamman a cikin sojoji, motoci, da sassan sararin samaniya.

Tsarin Tauraron Dan Adam:
A cikin tsarin sadarwar tauraron dan adam, waɗannan wafers suna tabbatar da dorewa da babban aiki na amplifiers, masu iya aiki a cikin matsanancin yanayin muhalli.

Lantarki Mai Girma:
Ƙarfin sarrafa zafin jiki na GaN-on-Diamond ya sa su dace da na'urorin lantarki masu ƙarfi, kamar masu canza wutar lantarki, masu juyawa, da relay mai ƙarfi.

Tsare-tsaren Gudanar da Zazzabi:
Saboda babban yanayin zafi na lu'u-lu'u, ana iya amfani da waɗannan wafers a cikin aikace-aikacen da ke buƙatar sarrafa zafin jiki mai ƙarfi, kamar LED mai ƙarfi da tsarin laser.

Tambaya&A don GaN-on-Diamond Wafers

Q1: Menene fa'idar yin amfani da wafers na GaN-on-Diamond a cikin manyan aikace-aikacen mitoci?

A1:GaN-on-Diamond wafers sun haɗu da babban motsi na lantarki da faffadan bandgap na GaN tare da fitaccen zafin zafin lu'u-lu'u. Wannan yana ba da damar na'urori masu mahimmanci don yin aiki a matakan wutar lantarki mafi girma yayin da suke sarrafa zafi sosai, tabbatar da inganci da aminci idan aka kwatanta da kayan gargajiya.

Q2: Shin GaN-on-Diamond wafers za a iya keɓance don takamaiman iko da buƙatun mitar?

A2:Ee, GaN-on-Diamond wafers suna ba da zaɓuɓɓukan da za a iya daidaita su, gami da kauri na epitaxial Layer (0.6 µm zuwa 2.5 µm), girman wafer (4-inch, 6-inch), da sauran sigogi dangane da takamaiman buƙatun aikace-aikacen, samar da sassauci don babban iko da aikace-aikacen mitoci masu girma.

Q3: Menene mabuɗin fa'idodin lu'u-lu'u a matsayin ma'auni na GaN?

A3:Matsakaicin zafin zafin na lu'u-lu'u (har zuwa 2200 W/m·K) yana taimakawa sosai wajen watsar da zafi da na'urorin GaN masu ƙarfi ke samarwa. Wannan ikon sarrafa zafin rana yana ba da damar na'urorin GaN-on-Diamond suyi aiki a mafi girman ƙarfin ƙarfi da mitoci, tabbatar da ingantaccen aikin na'urar da tsawon rai.

Q4: Shin GaN-on-Diamond wafers sun dace da aikace-aikacen sarari ko sararin samaniya?

A4:Ee, GaN-on-Diamond wafers sun dace da sararin samaniya da aikace-aikacen sararin samaniya saboda babban amincin su, ikon sarrafa zafin jiki, da kuma aiki a cikin matsanancin yanayi, irin su babban radiation, bambancin zafin jiki, da kuma aiki mai girma.

Q5: Menene tsawon rayuwar na'urorin da aka yi daga GaN-on-Diamond wafers?

A5:Haɗin ɗorewa na GaN da keɓaɓɓen lu'u-lu'u na keɓaɓɓen kaddarorin ɓarkewar zafi yana haifar da tsawon rayuwa ga na'urori. An ƙera na'urorin GaN-on-Diamond don yin aiki a cikin mahalli masu tsauri da babban ƙarfin ƙarfi tare da ƙarancin lalacewa akan lokaci.

Q6: Ta yaya ma'aunin zafi na lu'u-lu'u ke shafar aikin GaN-on-Diamond wafers?

A6:Babban yanayin zafi na lu'u-lu'u yana taka muhimmiyar rawa wajen haɓaka aikin wafers na GaN-on-Diamond ta hanyar yadda ya dace da kawar da zafin da aka haifar a aikace-aikacen ƙarfi mai ƙarfi. Wannan yana tabbatar da cewa na'urorin GaN suna kula da aiki mafi kyau, rage yawan zafin jiki, da kuma guje wa zafi mai zafi, wanda shine kalubale na yau da kullum a cikin na'urorin semiconductor na al'ada.

Q7: Menene aikace-aikace na yau da kullun inda GaN-on-Diamond wafers suka fi sauran kayan semiconductor?

A7:GaN-on-Diamond wafers sun fi sauran kayan aiki a aikace-aikacen da ke buƙatar babban iko, aiki mai girma, da ingantaccen sarrafa zafi. Wannan ya haɗa da amplifiers na RF, tsarin radar, sadarwa ta microwave, sadarwar tauraron dan adam, da sauran kayan lantarki masu ƙarfi.

Kammalawa

GaN-on-Diamond wafers suna ba da mafita na musamman don aikace-aikace mai ƙarfi da ƙarfi, haɗa babban aikin GaN tare da keɓaɓɓen kayan zafi na lu'u-lu'u. Tare da fasalulluka masu gyare-gyare, an tsara su don saduwa da bukatun masana'antu da ke buƙatar isar da wutar lantarki mai inganci, sarrafa zafin jiki, da aiki mai girma, tabbatar da aminci da tsawon rai a cikin mahalli masu kalubale.

Cikakken zane

GaN on Diamond01
GaN a kan Diamond02
GaN on Diamond03
GaN a kan Diamond04

  • Na baya:
  • Na gaba:

  • Ku rubuta sakonku anan ku aiko mana