Gallium Nitride akan Silicon wafer 4inch 6 inch Tailored Si Substrate Orientation, Resistivity, and N-type/P-type Options
Siffofin
●Mai Faɗi:GaN (3.4 eV) yana ba da gagarumin ci gaba a cikin mita mai girma, ƙarfin ƙarfi, da yanayin zafi idan aka kwatanta da siliki na gargajiya, yana sa ya dace da na'urorin wutar lantarki da RF amplifiers.
●Na'urar da za a iya keɓancewa ta hanyar daidaitawa:Zaɓi daga sigogin Sis daban-daban kamar <111>, <100>, da sauransu don dacewa da takamaiman buƙatun na'urar.
● Juriya na Musamman:Zaɓi tsakanin zaɓuɓɓukan tsayayya daban-daban don Si, daga Semi-insulating zuwa babban juriya da ƙarancin juriya don haɓaka aikin na'urar.
●Nau'in Doping:Akwai a cikin nau'in N-type ko nau'in P-doping don dacewa da buƙatun na'urorin wuta, transistor RF, ko LEDs.
●Babban Rushewar Wutar Lantarki:Wafers na GaN-on-Si suna da babban ƙarfin rushewa (har zuwa 1200V), yana ba su damar sarrafa aikace-aikacen wutar lantarki mai ƙarfi.
●Mafi Saurin Canjawa:GaN yana da mafi girman motsi na lantarki da ƙananan asarar sauyawa fiye da silicon, yana sa wafers GaN-on-Si manufa don da'irori masu sauri.
●Ingantattun Ayyukan Zazzabi:Duk da ƙarancin ƙarancin zafin jiki na silicon, GaN-on-Si har yanzu yana ba da kwanciyar hankali mai ƙarfi, tare da mafi kyawun ɓarkewar zafi fiye da na'urorin silicon na gargajiya.
Ƙididdiga na Fasaha
| Siga | Daraja |
| Girman Wafer | 4-inch, 6-inch |
| Si Substrate Orientation | <111>, <100>, al'ada |
| Si Resistivity | Babban juriya, Semi-insulating, Low-resistivity |
| Nau'in Doping | Nau'in N, nau'in P |
| GaN Layer Kauri | 100nm - 5000nm (wanda za'a iya canzawa) |
| AlGaN Barrier Layer | 24% - 28% Al (na al'ada 10-20 nm) |
| Rushewar Wutar Lantarki | 600V-1200V |
| Motsin Wutar Lantarki | 2000 cm²/V·s |
| Mitar Canjawa | Har zuwa 18 GHz |
| Wafer Surface Roughness | RMS ~ 0.25 nm (AFM) |
| GaN Sheet Resistance | 437.9 Ω · cm² |
| Jimlar Wafer Warp | <25 µm (mafi girma) |
| Thermal Conductivity | 1.3 - 2.1 W/cm·K |
Aikace-aikace
Kayan Wutar Lantarki: GaN-on-Si yana da kyau ga kayan lantarki na lantarki irin su amplifiers, masu canzawa, da masu juyawa da aka yi amfani da su a cikin tsarin makamashi mai sabuntawa, motocin lantarki (EVs), da kayan aikin masana'antu. Babban ƙarfin rushewar sa da ƙarancin juriya yana tabbatar da ingantaccen jujjuyawar wutar lantarki, har ma a aikace-aikacen ƙarfi mai ƙarfi.
RF da Sadarwar Microwave: GaN-on-Si wafers suna ba da damar mitoci masu girma, suna sa su zama cikakke ga masu haɓaka wutar lantarki na RF, sadarwar tauraron dan adam, tsarin radar, da fasahar 5G. Tare da mafi girman saurin sauyawa da kuma ikon yin aiki a mafi girman mitoci (har zuwa18 GHz), Na'urorin GaN suna ba da kyakkyawan aiki a cikin waɗannan aikace-aikacen.
Kayan Wutar Lantarki na MotaAna amfani da GaN-on-Si a tsarin wutar lantarki, gami daCaja na kan jirgi (OBCs)kumaDC-DC masu canzawa. Ƙarfinsa don yin aiki a yanayin zafi mafi girma da kuma tsayayya da matakan ƙarfin lantarki yana sa ya dace da aikace-aikacen abin hawa na lantarki wanda ke buƙatar jujjuya wutar lantarki mai ƙarfi.
LED da Optoelectronics: GaN shine kayan da aka zaba don LEDs blue da fari. Ana amfani da wafers na GaN-on-Si don samar da ingantaccen tsarin hasken wutar lantarki na LED, yana ba da kyakkyawan aiki a cikin haske, fasahar nuni, da hanyoyin sadarwa na gani.
Tambaya&A
Q1: Menene fa'idar GaN akan silicon a cikin na'urorin lantarki?
A1:GaN aBabban bandgap (3.4 eV)fiye da silicon (1.1 eV), wanda ke ba shi damar yin tsayayya da matsanancin ƙarfin lantarki da yanayin zafi. Wannan kadarorin yana ba GaN damar sarrafa aikace-aikacen masu ƙarfi da inganci, rage asarar wutar lantarki da haɓaka aikin tsarin. GaN kuma yana ba da saurin sauyawa cikin sauri, waɗanda ke da mahimmanci ga na'urori masu tsayi kamar su amplifiers RF da masu canza wuta.
Q2: Zan iya siffanta Si substrate fuskantarwa don aikace-aikace na?
A2:Ee, muna bayarwacustomizable Si substrate fuskantarwakamar<111>, <100>, da sauran hanyoyin daidaitawa dangane da buƙatun na'urar ku. Matsakaicin juzu'i na Si yana taka muhimmiyar rawa a aikin na'urar, gami da halayen lantarki, yanayin zafi, da kwanciyar hankali na inji.
Q3: Menene fa'idodin amfani da wafers na GaN-on-Si don aikace-aikacen mitoci masu girma?
A3:Wafers na GaN-on-Si suna ba da fifikosaurin sauyawa, ba da damar aiki da sauri a mafi girma mitoci idan aka kwatanta da silicon. Wannan ya sa su manufa dominRFkumamicrowaveaikace-aikace, kazalika da high-mitana'urorin wutar lantarkikamarHEMTs(High Electron Mobility Transistor) daRF amplifiers. Babban motsin lantarki na GaN shima yana haifar da raguwar asarar sauyawa da ingantaccen aiki.
Q4: Wadanne zaɓuɓɓukan doping ne akwai don wafers GaN-on-Si?
A4:Mun bayar duka biyuNau'in NkumaNau'in PZaɓuɓɓukan doping, waɗanda galibi ana amfani da su don nau'ikan na'urorin semiconductor daban-daban.N-nau'in dopingshi ne manufa dominikon transistorkumaRF amplifiers, yayin daP-nau'in dopingAna amfani dashi sau da yawa don na'urorin optoelectronic kamar LEDs.
Kammalawa
Gallium Nitride ɗinmu na Musamman akan Silicon (GaN-on-Si) Wafers yana ba da mafita mai kyau don aikace-aikace mai ƙarfi, ƙarfi, da zafin jiki. Tare da daidaitawar Si substrate daidaitawa, resistivity, da N-type/P-nau'in doping, waɗannan wafers an keɓance su don saduwa da takamaiman bukatun masana'antu daga na'urorin lantarki da tsarin kera motoci zuwa sadarwar RF da fasahar LED. Yin amfani da ingantattun kaddarorin GaN da haɓakar siliki, waɗannan wafers suna ba da ingantaccen aiki, inganci, da tabbaci na gaba don na'urori masu zuwa.
Cikakken zane
