Gallium Nitride (GaN) Epitaxial Girma akan Sapphire Wafers 4inch 6inch don MEMS
Abubuwan GaN akan Sapphire Wafers
● Babban Haɓaka:Na'urorin tushen GaN suna ba da iko sau biyar fiye da na'urorin tushen silicon, haɓaka aiki a cikin aikace-aikacen lantarki daban-daban, gami da haɓaka RF da optoelectronics.
●Mai Faɗi:Faɗin bandgap na GaN yana ba da damar yin aiki mai girma a yanayin zafi mai tsayi, yana mai da shi manufa don aikace-aikacen ƙarfi da ƙarfi.
● Dorewa:Ƙarfin GaN don ɗaukar matsanancin yanayi (ƙananan yanayin zafi da radiation) yana tabbatar da aiki mai ɗorewa a cikin yanayi mara kyau.
●Ƙananan Girma:GaN yana ba da damar samar da ƙarin ƙananan na'urori masu nauyi da nauyi idan aka kwatanta da kayan aikin semiconductor na gargajiya, yana sauƙaƙe ƙarami da ƙarin ƙarfin lantarki.
Abstract
Gallium Nitride (GaN) yana fitowa a matsayin mai ba da izini na zaɓi don aikace-aikacen ci-gaba da ke buƙatar babban iko da inganci, irin su na'urorin gaba-gaba na RF, tsarin sadarwa mai sauri, da hasken LED. GaN epitaxial wafers, lokacin da aka girma akan sapphire substrates, suna ba da haɗe-haɗe na haɓakar zafin jiki mai ƙarfi, babban ƙarfin wutar lantarki, da faɗaɗa mitar amsawa, waɗanda ke da mahimmanci don ingantaccen aiki a cikin na'urorin sadarwar mara waya, radars, da jammers. Ana samun waɗannan wafers a cikin diamita 4-inch da 6-inch, tare da bambancin kauri na GaN don saduwa da buƙatun fasaha daban-daban. Abubuwan musamman na GaN sun sa ya zama babban ɗan takara don makomar wutar lantarki.
Sigar Samfura
| Siffar Samfurin | Ƙayyadaddun bayanai |
| Wafer Diamita | 50mm, 100mm, 50.8mm |
| Substrate | Sapphire |
| GaN Layer Kauri | 0.5 μm - 10 μm |
| GaN Type/Doping | Nau'in N-nau'in (nau'in P-yana samuwa akan buƙata) |
| GaN Crystal Orientation | <0001> |
| Nau'in gogewa | Goge Gefe Guda Daya (SSP), Goge Gefe Biyu (DSP) |
| Al2O3 Kauri | 430 μm - 650 μm |
| TTV (Jimlar Bambancin Kauri) | ≤ 10 μm |
| Ruku'u | ≤ 10 μm |
| Warp | ≤ 10 μm |
| Wurin Sama | Wurin Sama Mai Amfani > 90% |
Tambaya&A
Q1: Menene mabuɗin fa'idodin amfani da GaN akan na'urorin siliki na gargajiya na gargajiya?
A1: GaN yana ba da fa'idodi da yawa masu mahimmanci akan silicon, gami da faffadan bandgap, wanda ke ba shi damar ɗaukar manyan ƙarfin rushewa da aiki da kyau a yanayin zafi mafi girma. Wannan ya sa GaN ya dace don babban iko, aikace-aikace masu girma kamar na'urorin RF, amplifiers, da LEDs. Ƙarfin GaN don ɗaukar mafi girman ƙarfin ƙarfi kuma yana ba da damar ƙananan na'urori masu inganci idan aka kwatanta da madadin tushen silicon.
Q2: Za a iya amfani da GaN akan wafers na Sapphire a aikace-aikacen MEMS (Micro-Electro-Mechanical Systems)?
A2: Ee, GaN a kan Sapphire wafers ya dace da aikace-aikacen MEMS, musamman ma inda ake buƙatar babban iko, kwanciyar hankali na zafin jiki, da ƙananan amo. Dorewar kayan aiki da inganci a cikin mahalli masu yawa sun sa ya dace don na'urorin MEMS da ake amfani da su a cikin sadarwa mara waya, ji, da tsarin radar.
Q3: Menene yuwuwar aikace-aikacen GaN a cikin sadarwar mara waya?
A3: Ana amfani da GaN sosai a cikin samfuran gaba-gaba na RF don sadarwa mara waya, gami da abubuwan more rayuwa na 5G, tsarin radar, da jamers. Ƙarfin ƙarfinsa da ƙarfin wutar lantarki ya sa ya zama cikakke don babban iko, na'urori masu yawa, yana ba da damar mafi kyawun aiki da ƙananan nau'i na nau'i idan aka kwatanta da mafita na tushen silicon.
Q4: Menene lokutan jagora da mafi ƙarancin oda na GaN akan wafers na Sapphire?
A4: Lokacin jagora da mafi ƙarancin oda sun bambanta dangane da girman wafer, kauri na GaN, da takamaiman buƙatun abokin ciniki. Da fatan za a tuntuɓe mu kai tsaye don cikakken farashi da samuwa dangane da ƙayyadaddun ku.
Q5: Zan iya samun kauri na GaN na al'ada ko matakan doping?
A5: Ee, muna ba da gyare-gyare na kauri na GaN da matakan doping don saduwa da takamaiman bukatun aikace-aikacen. Da fatan za a sanar da mu takamaiman abubuwan da kuke so, kuma za mu samar da ingantaccen bayani.
Cikakken zane
