GaAs babban ƙarfin epitaxial wafer substrate gallium arsenide wafer wafer ikon laser tsawon rai 905nm don maganin laser
Babban fasalulluka na takardar epitaxial laser na GaAs sun haɗa da:
1. Babban motsi na electron: Gallium arsenide yana da babban motsi na electron, wanda ke sa wafers na laser na GaAs suna da amfani mai kyau a cikin na'urori masu yawan mita da na'urorin lantarki masu saurin gudu.
2. Hasken canjin bandgap kai tsaye: A matsayin kayan bandgap kai tsaye, gallium arsenide na iya canza makamashin lantarki cikin inganci zuwa makamashin haske a cikin na'urorin optoelectronic, wanda hakan ya sa ya dace da ƙera lasers.
3. Tsawon Wavelength: Lasers na GaAs 905 galibi suna aiki a 905 nm, wanda hakan ya sa suka dace da amfani da su da yawa, gami da maganin biomedicine.
4. Babban inganci: tare da ingantaccen canjin hoto, yana iya canza makamashin lantarki yadda ya kamata zuwa fitarwa ta laser.
5. Babban fitarwar wutar lantarki: Yana iya cimma babban fitarwar wutar lantarki kuma ya dace da yanayin aikace-aikace waɗanda ke buƙatar tushen haske mai ƙarfi.
6. Kyakkyawan aikin zafi: Kayan GaAs yana da kyakkyawan yanayin zafi, yana taimakawa rage zafin aiki na laser da inganta kwanciyar hankali.
7. Faɗin iya canzawa: Ana iya daidaita ƙarfin fitarwa ta hanyar canza wutar lantarki don daidaitawa da buƙatun aikace-aikace daban-daban.
Babban amfani da allunan epitaxial na laser GaAs sun haɗa da:
1. Sadarwar fiber na gani: Ana iya amfani da takardar epitaxial ta laser ta GaAs don ƙera lasers a cikin sadarwa ta fiber na gani don cimma watsa siginar gani mai sauri da nisa.
2. Aikace-aikacen Masana'antu: A fannin masana'antu, ana iya amfani da zanen gado na laser na GaAs don amfani da laser ranging, laser marking da sauran aikace-aikace.
3. VCSEL: Laser mai fitar da saman ramin tsaye (VCSEL) muhimmin filin aikace-aikace ne na takardar epitaxial na laser na GaAs, wanda ake amfani da shi sosai a fannin sadarwa ta gani, ajiyar gani da kuma fahimtar gani.
4. Filin Infrared da Tabo: Haka kuma ana iya amfani da takardar epitaxial ta laser GaAs don ƙera lasers na infrared, janareto masu haske da sauran na'urori, suna taka muhimmiyar rawa a gano infrared, nunin haske da sauran filayen.
Shirya takardar epitaxial ta laser GaAs ya dogara ne akan fasahar girma ta epitaxial, gami da adana tururin sinadarai na ƙarfe (MOCVD), epitaxial na ƙwayoyin halitta (MBE) da sauran hanyoyi. Waɗannan dabarun za su iya sarrafa kauri, tsari da tsarin lu'ulu'u na Layer na epitaxial don samun takaddun epitaxial na laser GaAs masu inganci.
XKH tana ba da gyare-gyare na zanen gado na GaAs a cikin tsari da kauri daban-daban, wanda ya ƙunshi nau'ikan aikace-aikace iri-iri a cikin sadarwa ta gani, VCSEL, filayen infrared da haske. Ana ƙera samfuran XKH tare da kayan aikin MOCVD na zamani don tabbatar da babban aiki da aminci. Dangane da dabaru, XKH tana da nau'ikan hanyoyin tushe na ƙasashen duniya iri-iri, waɗanda za su iya sarrafa adadin oda cikin sauƙi, da kuma samar da ayyuka masu ƙima kamar tsaftacewa da rarrabawa. Ingancin hanyoyin isarwa yana tabbatar da isarwa akan lokaci da kuma biyan buƙatun abokin ciniki don inganci da lokutan isarwa. Abokan ciniki za su iya samun cikakken tallafin fasaha da sabis bayan siyarwa bayan isowa don tabbatar da cewa an yi amfani da samfurin cikin sauƙi.
Cikakken Zane



