GaAs high-power epitaxial wafer substrate gallium arsenide wafer ikon Laser tsayin tsayin 905nm don maganin likitancin Laser
Babban fasali na takardar GaAs Laser epitaxial sun haɗa da:
1.High electron motsi: Gallium arsenide yana da babban motsi na lantarki, wanda ya sa GaAs laser epitaxial wafers suna da aikace-aikace masu kyau a cikin na'urori masu mahimmanci da na'urorin lantarki masu sauri.
2.Direct bandgap miƙa mulki luminescence: A matsayin kai tsaye bandgap abu, gallium arsenide iya nagarta sosai maida wutar lantarki makamashi cikin haske makamashi a optoelectronic na'urorin, sa shi manufa domin yi na Laser.
3.Wavelength: GaAs 905 lasers yawanci suna aiki a 905 nm, yana sa su dace da aikace-aikacen da yawa, ciki har da biomedicine.
4.High yadda ya dace: tare da high photoelectric hira yadda ya dace, shi zai iya yadda ya kamata maida lantarki makamashi a cikin Laser fitarwa.
5.High ikon fitarwa: Zai iya cimma babban fitarwa kuma ya dace da yanayin aikace-aikacen da ke buƙatar tushen haske mai ƙarfi.
6.Good thermal aiki: GaAs abu yana da kyakkyawan halayen thermal, yana taimakawa wajen rage yawan zafin jiki na Laser da inganta kwanciyar hankali.
7.Wide tunability: Za a iya daidaita ikon fitarwa ta hanyar canza halin yanzu don daidaitawa da bukatun aikace-aikacen daban-daban.
Babban aikace-aikace na GaAs Laser Allunan epitaxial sun haɗa da:
1. Sadarwar fiber na gani: GaAs laser epitaxial sheet za a iya amfani dashi don kera lasers a cikin sadarwar fiber na gani don cimma saurin watsa siginar gani mai nisa.
2. Masana'antu aikace-aikace: A cikin masana'antu filin, GaAs Laser epitaxial zanen gado za a iya amfani da Laser jeri, Laser alama da sauran aikace-aikace.
3. VCSEL: A tsaye cavity surface emitting Laser (VCSEL) wani muhimmin filin aikace-aikace na GaAs Laser epitaxial sheet, wanda aka yi amfani da ko'ina a cikin Tantancewar sadarwa, Tantancewar ajiya da na gani ji.
4. Infrared da tabo filin: GaAs Laser epitaxial takardar kuma za a iya amfani da su ƙera infrared Laser, spot janareta da sauran na'urorin, taka muhimmiyar rawa a cikin infrared ganowa, haske nuni da sauran filayen.
Shirye-shiryen GaAs Laser takardar epitaxial ya dogara ne akan fasahar haɓaka epitaxial, gami da ƙarfe-kwayoyin tururi na sinadarai (MOCVD), ƙwararrun ƙwayoyin ƙwayoyin cuta (MBE) da sauran hanyoyin. Waɗannan fasahohin na iya daidaita kauri, abun da ke ciki da tsarin crystal na Layer epitaxial don samun ingantattun zanen gadon Laser na GaAs.
XKH yana ba da gyare-gyare na GaAs epitaxial zanen gado a cikin sassa daban-daban da kauri, yana rufe nau'ikan aikace-aikace a cikin hanyoyin sadarwa na gani, VCSEL, infrared da filayen tabo mai haske. Ana ƙera samfuran XKH tare da kayan aikin MOCVD na ci gaba don tabbatar da babban aiki da aminci. Dangane da kayan aiki, XKH yana da nau'ikan tashoshi masu yawa na kasa da kasa, waɗanda za su iya daidaita adadin umarni, da kuma samar da ƙarin ayyuka masu ƙima kamar haɓakawa da rarrabawa. Ingantattun hanyoyin isarwa suna tabbatar da isarwa akan lokaci da biyan buƙatun abokin ciniki don inganci da lokutan bayarwa. Abokan ciniki za su iya samun cikakken goyon bayan fasaha da sabis na tallace-tallace bayan isowa don tabbatar da cewa an yi amfani da samfurin cikin sauƙi.