Substrate na Electrode Sapphire da Wafer C-plane LED Substrates

Takaitaccen Bayani:

Dangane da ci gaba da haɓaka fasahar sapphire da kuma faɗaɗa kasuwar aikace-aikacen cikin sauri, manyan kamfanonin guntu za su karɓi wafers ɗin substrate masu inci 4 da inci 6 saboda fa'idodin da ke tattare da amfani da su a samarwa.


Siffofi

Ƙayyadewa

JANARIYA

Tsarin Sinadarai

Al2O3

Tsarin Crystal

Tsarin Hexagonal (hk o 1)

Girman Tantanin Naúrar

a = 4.758 Å, Å c=12.991 Å, c: a=2.730

JIKI

 

Ma'auni

Turanci (Daular Masar)

Yawan yawa

3.98 g/cc

0.144 lb/in3

Tauri

1525 - 2000 Knoop, 9 mhos

3700° Fahrenheit

Wurin narkewa

2310 K (2040° C)

 

Tsarin

Ƙarfin Taurin Kai

275 MPa zuwa 400 MPa

40,000 zuwa 58,000 psi

Ƙarfin Tashin Hankali a 20°C

 

58,000 psi (ƙimar ƙira)

Ƙarfin Tashin Hankali a 500° C

 

40,000 psi (ƙimar ƙira)

Ƙarfin Tashin Hankali a 1000° C

355 MPa

52,000 psi (ƙimar ƙira)

Ƙarfin Lankwasawa

480 MPa zuwa 895 MPa

70,000 zuwa 130,000 psi

Ƙarfin Matsi

2.0 GPa (na ƙarshe)

300,000 psi (na ƙarshe)

Sapphire a matsayin substrate na da'irar semiconductor

Wafers ɗin sapphire masu sirara su ne farkon nasarar amfani da wani abu mai rufi wanda aka sanya silicon a kai don ƙera da'irori masu haɗawa da ake kira silicon akan sapphire (SOS). Baya ga kyawawan halayensa na rufi na lantarki, sapphire yana da babban ƙarfin lantarki. Chips ɗin CMOS akan sapphire sun dace musamman don aikace-aikacen mitar rediyo mai ƙarfi (RF) kamar wayoyin hannu, rediyon tsaro na jama'a da tsarin sadarwa na tauraron dan adam.

Ana kuma amfani da wafers ɗin sapphire guda ɗaya a matsayin substrates a masana'antar semiconductor don haɓaka na'urori masu tushen gallium nitride (GaN). Amfani da sapphire yana rage farashi sosai saboda kusan kashi 1/7 na farashin germanium ne. Ana amfani da GaN akan sapphire a cikin diodes masu fitar da haske shuɗi (LEDs).

Yi amfani da shi azaman kayan taga

Ana amfani da saffir mai roba (wani lokacin ana kiransa gilashin saffir) a matsayin kayan taga saboda yana da haske sosai tsakanin 150 nm (ultraviolet) da 5500 nm (infrared) raƙuman haske (bakan da ake gani yana daga kimanin 380 nm zuwa 750 nm) kuma yana da juriya sosai ga karce. Manyan fa'idodin tagogi masu launin shuɗi

A haɗa

Faɗin bandwidth na watsawa na gani mai faɗi sosai, daga UV zuwa hasken kusa-infrared

Ya fi sauran kayan gani ko tagogi gilashi ƙarfi

Yana da matuƙar juriya ga karcewa da gogewa (ƙarfin ma'adinai na 9 a sikelin Mohs, na biyu bayan lu'u-lu'u da moissanite a tsakanin abubuwan halitta)

Matsanancin narkewa sosai (2030°C)

Cikakken Zane

Substrate da Wafer na Electrode (1)
Substrate da Wafer na Electrode (2)

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