Dia300x1.0mmt Kauri Sapphire Wafer C-Plane SSP/DSP
Gabatar da akwatin wafer
Crystal Materials | 99,999% na Al2O3, High Purity, Monocrystalline, Al2O3 | |||
Crystal inganci | Haɗa, alamomin toshe, tagwaye, Launi, ƙananan kumfa da cibiyoyin watsawa babu su. | |||
Diamita | 2 inci | 3 inci | 4 inci | 6 inch zuwa 12 inch |
50.8± 0.1mm | 76.2 ± 0.2mm | 100± 0.3mm | A daidai da tanadi na daidaitattun samarwa | |
Kauri | 430± 15µm | 550± 15µm | 650± 20µm | Za a iya keɓance ta abokin ciniki |
Gabatarwa | C-jirgin sama (0001) zuwa M-jirgin sama (1-100) ko A-jirgin sama (1 1-2 0) 0.2±0.1° /0.3±0.1°, R-jirgin sama (1-1 0 2), A-jirgin sama (1 1-2 0 ), M-jirgin sama (1-1 0 0), Kowane Gabatarwa , Kowane kusurwa | |||
Tsawon lebur na farko | 16.0 ± 1mm | 22.0 ± 1.0mm | 32.5 ± 1.5 mm | A daidai da tanadi na daidaitattun samarwa |
Gabatarwar Firamare | A-jirgin sama (1 1-2 0) ± 0.2° | |||
TTV | ≤10µm | ≤15µm | ≤20µm | ≤30µm |
LTV | ≤10µm | ≤15µm | ≤20µm | ≤30µm |
TIR | ≤10µm | ≤15µm | ≤20µm | ≤30µm |
BANGO | ≤10µm | ≤15µm | ≤20µm | ≤30µm |
Warp | ≤10µm | ≤15µm | ≤20µm | ≤30µm |
Fuskar Gaba | Epi-Polished (Ra<0.2nm) |
* Baka: Maɓallin tsakiya na tsaka-tsakin tsaka-tsakin tsaka-tsakin kyauta, wanda ba a haɗa shi ba daga jirgin sama, inda aka kwatanta jirgin sama ta kusurwoyi uku na triangle daidai.
*Warp: Bambanci tsakanin matsakaicin matsakaici da mafi ƙarancin nisa na tsaka-tsakin tsaka-tsakin wafer kyauta, mara-ƙulle daga jirgin sama da aka ayyana a sama.
Samfura da sabis masu inganci don na'urorin semiconductor na gaba da haɓaka epitaxial:
Babban matakin flatness (mai sarrafa TTV, baka, warp da sauransu)
Tsaftacewa mai inganci (ƙananan gurɓataccen ƙwayar cuta, ƙarancin ƙarancin ƙarfe)
Shuka hakowa, tsagi, yankan, da gogewar baya
Haɗe-haɗe na bayanai kamar tsabta da siffar substrate (na zaɓi)
Idan kana da buƙatun sapphire, da fatan za a iya tuntuɓar:
mail:eric@xkh-semitech.com+86 158 0194 2596 /doris@xkh-semitech.com+86 187 0175 6522
Za mu dawo gare ku da sauri!