Nau'in SiC Iri Mai Girki Dia 205/203/208 4H-N don Sadarwar Ganuwa

SiC Seed Crystal Substrates Dia 205/203/208 Nau'in 4H-N don Sadarwar Ganuwa Hoton da aka Fito

Takaitaccen Bayani:

SiC (silicon carbide) irin kristal, a matsayin manyan masu ɗaukar kayan semiconductor na ƙarni na uku, suna amfani da babban ƙarfin zafin su (4.9 W/cm·K), ƙarfin filin fashewa mai matuƙar girma (2-4 MV/cm), da kuma faɗin bandgap (3.2 eV) don zama kayan tushe don optoelectronics, sabbin motocin makamashi, sadarwa ta 5G, da aikace-aikacen sararin samaniya. Ta hanyar fasahar kera kayayyaki masu ci gaba kamar jigilar tururi na zahiri (PVT) da epitaxy na ruwa (LPE), XKH yana samar da nau'in iri na 4H/6H-N, Semi-insulating, da 3C-SiC polytype substrates a cikin nau'ikan wafer na inci 2-12, tare da yawan micropipe ƙasa da 0.3 cm⁻², juriya tsakanin 20-23 mΩ·cm, da kuma tsauraran saman (Ra) <0.2 nm. Ayyukanmu sun haɗa da haɓakar heteroepitaxial (misali, SiC-on-Si), injin daidaita nanoscale (±0.1 μm haƙuri), da isar da sauri a duniya, wanda ke ƙarfafa abokan ciniki su shawo kan shingayen fasaha da kuma hanzarta tsaka tsaki na carbon da sauye-sauye masu wayo.

Aika mana imel

Siffofi

Sigogi na fasaha

Wafer ɗin irin silicon carbide
Nau'in Polytype	4H
Kuskuren daidaitawar saman	4°zuwa <11-20>±0.5º
Juriya	keɓancewa
diamita	205±0.5mm
Kauri	600±50μm
Taurin kai	CMP,Ra≤0.2nm
Yawan bututun micropipe	≤1 ea/cm2
Ƙira	≤5, Jimlar Tsawon ≤2*Diamita
Ƙwayoyin gefe/ƙasa	Babu
Alamar laser ta gaba	Babu
Ƙira	≤2, Jimlar Tsawon ≤Diamita
Ƙwayoyin gefe/ƙasa	Babu
Yankunan da aka fi amfani da su	Babu
Alamar laser ta baya	1mm (daga gefen sama)
Gefen	Chamfer
Marufi	Kaset ɗin wafer mai yawa

Muhimman Halaye

1. Tsarin Crystal da Aikin Lantarki

· Kwanciyar hankali ta lu'ulu'u: rinjayen nau'in polytype 4H-SiC 100%, babu wani abu da ya haɗa da lu'ulu'u masu yawa (misali, 6H/15R), tare da lanƙwasa mai jujjuyawar XRD mai cikakken faɗi a rabin matsakaicin (FWHM) ≤32.7 arcsec.

· Babban Motsi Mai Jigilar Kaya: Motsi na lantarki na 5,400 cm²/V·s (4H-SiC) da kuma motsi na rami na 380 cm²/V·s, wanda ke ba da damar ƙirar na'urori masu yawan mita.

Taurin Haske: Yana jure wa hasken neutron 1 MeV tare da matsakaicin lalacewar motsi na 1×10¹⁵ n/cm², wanda ya dace da aikace-aikacen sararin samaniya da makaman nukiliya.

2. Halayen Zafi da Inji

· Na'urar auna zafin jiki ta musamman: 4.9 W/cm·K (4H-SiC), sau uku na silicon, wanda ke tallafawa aiki sama da 200°C.

· Ƙarancin Faɗaɗawar Zafi: CTE na 4.0×10⁻⁶/K (25–1000°C), yana tabbatar da dacewa da marufi da aka yi da silicon da kuma rage damuwa ta zafi.

3. Daidaitawar Lalacewa da Sarrafawa

· Yawan bututun micropipe: <0.3 cm⁻² (wafers inci 8), yawan tarkace <1,000 cm⁻² (an tabbatar ta hanyar etching na KOH).

· Ingancin Sama: An goge CMP zuwa Ra <0.2 nm, yana biyan buƙatun daidaitaccen matakin lithography na EUV.

Manhajoji Masu Mahimmanci

Yanki	Yanayin Aikace-aikace	Fa'idodin Fasaha
Sadarwar gani	Na'urorin laser 100G/400G, na'urorin haɗin silicon photonics	Tsarin iri na InP yana ba da damar bandgap kai tsaye (1.34 eV) da heteroepitaxy na tushen Si, yana rage asarar haɗin ido.
Sabbin Motocin Makamashi	Masu canza wutar lantarki masu ƙarfin lantarki 800V, masu caji a cikin jirgin (OBC)	Substrates na 4H-SiC suna jure wa fiye da V 1,200, suna rage asarar watsawa da kashi 50% da kuma girman tsarin da kashi 40%.
Sadarwa ta 5G	Na'urorin RF masu girman milimita (PA/LNA), amplifiers na tashar tushe	Ƙananan SiC substrates (resistvivity >10⁵ Ω·cm) suna ba da damar haɗakarwa mai yawan mita (60 GHz+).
Kayan aikin masana'antu	Na'urori masu auna zafin jiki mai yawa, na'urorin canza wutar lantarki, na'urorin sa ido kan na'urorin nukiliya	Tsarin iri na InSb (bandgap na 0.17 eV) yana ba da ƙarfin maganadisu har zuwa 300% @ 10 T.

Muhimman Fa'idodi

Tsarin kristal iri na SiC (silicon carbide) yana ba da aiki mara misaltuwa tare da ƙarfin watsa zafi na 4.9 W/cm·K, ƙarfin filin fashewa na 2-4 MV/cm, da kuma faɗin bandgap na 3.2 eV, wanda ke ba da damar amfani da manyan iko, mita mai yawa, da zafin jiki mai yawa. Tare da ƙarancin yawan bututun micro da <1,000 cm⁻², waɗannan substrates suna tabbatar da aminci a cikin mawuyacin yanayi. Rashin ƙarfin sinadarai da saman da suka dace da CVD (Ra <0.2 nm) suna tallafawa ci gaban heteroepitaxial mai ci gaba (misali, SiC-on-Si) don tsarin wutar lantarki na optoelectronics da EV.

Ayyukan XKH:

1. Samarwa na Musamman

· Tsarin Wafer Mai Sauƙi: Wafers mai inci 2-12 tare da yanke-yanke masu zagaye, murabba'i, ko siffofi na musamman (±0.01 mm haƙuri).

· Kula da allurar rigakafi: Daidaitaccen allurar nitrogen (N) da aluminum (Al) ta hanyar CVD, samun juriya yana tsakanin 10⁻³ zuwa 10⁶ Ω·cm.

2. Fasahar Tsarin Ci gaba;

· Heteroepitaxy: SiC-on-Si (ya dace da layukan silicon inci 8) da SiC-on-Diamond (ƙarfin wutar lantarki >2,000 W/m·K).

· Rage Lalacewa: Gyaran hydrogen da kuma rage yawan sinadarin hydrogen don rage lahani ga bututun micropipe/yawan yawa, inganta yawan wafer zuwa >95%.

3. Tsarin Gudanar da Inganci;

· Gwaji Daga Ƙarshe Zuwa Ƙarshe: Raman spectroscopy (tabbatar da nau'in polytype), XRD (crystallinity), da SEM (nazarin lahani).

· Takaddun shaida: Ya dace da AEC-Q101 (mota), JEDEC (JEDEC-033), da MIL-PRF-38534 (matakin soja).

4. Tallafin Sarkar Samar da Kayayyaki na Duniya;

· Ƙarfin Samarwa: Fitar da kayayyaki a kowane wata > wafers 10,000 (60% inci 8), tare da isar da gaggawa na awanni 48.

· Cibiyar Sadarwar Jigilar Kaya: Rufewa a Turai, Arewacin Amurka, da Asiya-Pacific ta hanyar jigilar kaya ta iska/teku tare da marufi mai sarrafa zafin jiki.

5. Haɓaka Haɗin gwiwar Fasaha;

· Dakunan gwaje-gwaje na haɗin gwiwa na R&D: Yi aiki tare kan inganta marufi na module na wutar lantarki na SiC (misali, haɗakar substrate na DBC).

· Lasisin IP: Samar da lasisin fasahar ci gaban GaN-on-SiC RF don rage farashin bincike da ci gaban abokin ciniki.

Takaitaccen Bayani

SiC (silicon carbide) iri na kristal, a matsayin wani abu mai mahimmanci, suna sake fasalin sarƙoƙin masana'antu na duniya ta hanyar ci gaba a cikin girma na lu'ulu'u, sarrafa lahani, da haɗin kai daban-daban. Ta hanyar ci gaba da haɓaka rage lahani na wafer, haɓaka samar da inci 8, da faɗaɗa dandamali na heteroepitaxial (misali, SiC-on-Diamond), XKH yana samar da mafita masu inganci da inganci don optoelectronics, sabon makamashi, da masana'antu na zamani. Alƙawarinmu ga ƙirƙira yana tabbatar da cewa abokan ciniki suna jagoranci a cikin tsaka tsaki na carbon da tsarin fasaha, wanda ke jagorantar zamani na gaba na yanayin semiconductor mai faɗi.