Musamman SiC Seed Crystal Substrates Dia 205/203/208 4H-N Nau'in don Sadarwar Na gani

Musamman SiC Seed Crystal Substrates Dia 205/203/208 Nau'in 4H-N don Fitar da Hoton Sadarwar Na gani

Takaitaccen Bayani:

SiC (silicon carbide) iri kristal substrates, a matsayin core dillalai na uku-ƙarni semiconductor kayan, yin amfani da high thermal watsin (4.9 W / cm · K), matsananci-high rushewa filin ƙarfi (2-4 MV / cm), da fadi da bandgap (3.2 eV) don zama a matsayin tushe kayan for optoelectronics, a5G aikace-aikace na makamashi. Ta hanyar fasahar ƙirƙira ci gaba kamar jigilar tururi ta jiki (PVT) da ruwa lokaci epitaxy (LPE), XKH suna ba da nau'in 4H / 6H-N-nau'in, Semi-insulating, da 3C-SiC nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'i nau'in nau'in nau'in nau'in nau'in nau'i nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in jigilar kaya (PVT) da epitaxy na ruwa (LPE). kaushi (Ra) <0.2 nm. Ayyukanmu sun haɗa da haɓaka heteroepitaxial (misali, SiC-on-Si), nanoscale machining machining (± 0.1 μm haƙuri), da saurin isarwa na duniya, ƙarfafa abokan ciniki don shawo kan shingen fasaha da haɓaka tsaka-tsakin carbon da canji mai hankali.

Aika mana imel

Siffofin

Siffofin fasaha

Silicon carbide iri wafer
Polytype	4H
Kuskuren daidaita yanayin saman	4° zuwa <11-20>±0.5º
Resistivity	keɓancewa
Diamita	205 ± 0.5mm
Kauri	600± 50μm
Tashin hankali	CMP, Ra≤0.2nm
Maƙarƙashiya Maɗaukaki	≤1 ea/cm2
Scratches	≤5, Jimlar Tsawon≤2* Diamita
Gefen kwakwalwan kwamfuta / indents	Babu
Alamar Laser ta gaba	Babu
Scratches	≤2, Jimlar Tsawon≤ Diamita
Gefen kwakwalwan kwamfuta / indents	Babu
Yankunan polytype	Babu
Alamar Laser na baya	1mm (daga saman gefen)
Gefen	Chamfer
Marufi	Multi-wafer cassette

Mabuɗin Halaye

1. Crystal Structure da Electrical Performance

· Ƙarfafawar Crystallographic: 100% 4H-SiC polytype rinjaye, sifili multicrystalline inclusions (misali, 6H/15R), tare da XRD rocking kwana cika-nisa a rabin-mafi girma (FWHM) ≤32.7 arcsec.

Motsi mai ɗaukar nauyi: Motsawar lantarki na 5,400 cm²/V·s (4H-SiC) da motsin rami na 380 cm²/V·s, yana ba da damar ƙirar na'ura mai tsayi.

Taurin Radiation: Yana jurewa 1 MeV neutron iska mai guba tare da madaidaicin lalacewa na 1 × 10¹⁵ n/cm², manufa don aikace-aikacen sararin samaniya da makaman nukiliya.

2. Thermal da Mechanical Properties

Na Musamman Thermal Conductivity: 4.9 W/cm · K (4H-SiC), sau uku na silicon, goyon bayan aiki sama da 200°C.

Ƙwararren Ƙwararren Ƙwararrun Ƙwararru: CTE na 4.0 × 10⁻⁶ / K (25-1000 ° C), yana tabbatar da dacewa tare da marufi na tushen silicon da rage yawan damuwa na thermal.

3. Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwaƙwalwa

Yawan bututu: <0.3 cm⁻² (wafers 8-inch), ƙarancin rarrabuwa <1,000 cm⁻² (an tabbatar ta hanyar KOH etching).

Ingancin saman: CMP-gyara zuwa Ra <0.2 nm, saduwa da buƙatun flatness na darajar EUV.

Maɓallin Aikace-aikace

Domain	Yanayin aikace-aikace	Amfanin Fasaha
Hanyoyin sadarwa na gani	100G/400G Laser, silicon photonics matasan kayayyaki	InP iri substrates suna ba da damar bandgap kai tsaye (1.34 eV) da heteroepitax na tushen Si, yana rage asarar haɗaɗɗun gani.
Sabbin Motocin Makamashi	800V high-voltage inverters, onboard caja (OBC)	4H-SiC substrates jure> 1,200 V, rage conduction asarar da 50% da tsarin girma da 40%.
5G Sadarwa	Millimeter-wave RF na'urorin (PA/LNA), ma'aunin wutar lantarki na tushe	Semi-insulating SiC substrates (resistivity> 10⁵ Ω·cm) yana ba da damar haɗin kai mai tsayi (60 GHz+).
Kayayyakin Masana'antu	Na'urori masu auna zafin jiki, masu canza wuta na yanzu, na'urori masu sarrafa makamashin nukiliya	InSb iri substrates (0.17 eV bandgap) suna isar da hankalin maganadisu har zuwa 300%@10 T.

Mabuɗin Amfani

SiC (silicon carbide) nau'in kristal iri-iri yana ba da aikin da ba a iya kwatanta shi da 4.9 W / cm · K thermal conductivity, 2-4 MV / cm rushewar filin, da 3.2 eV wide bandgap, yana ba da damar babban iko, mita mai girma, da aikace-aikace masu zafi. Yana nuna girman sifili na micropipe da <1,000 cm⁻² yawan rarrabuwar kawuna, waɗannan sifofin suna tabbatar da dogaro a cikin matsanancin yanayi. Inertness na sinadaran su da saman CVD-jituwa (Ra <0.2 nm) suna tallafawa ci gaban heteroepitaxial girma (misali, SiC-on-Si) don optoelectronics da tsarin wutar lantarki na EV.

Ayyukan XKH:

1. Musamman Production

Tsarukan Wafer Mai Sauƙi: 2-12-inch wafers tare da madauwari, rectangular, ko yankan sifofi na al'ada (± 0.01 mm haƙuri).

Ikon Doping: Madaidaicin nitrogen (N) da aluminum (Al) doping ta hanyar CVD, samun juriya daga 10⁻³ zuwa 10⁶ Ω·cm.

2. Advanced Process Technologies;

· Heteroepitaxy: SiC-on-Si (wanda ya dace da layin silicon 8-inch) da SiC-on-Diamond (ɗaukar zafi> 2,000 W / m · K).

Rage lahani: Hydrogen etching da annealing don rage micropipe / yawa lahani, inganta wafer yawan amfanin ƙasa zuwa>95%.

3. Tsarin Gudanar da Inganci;

Gwajin Ƙarshe zuwa Ƙarshe: Raman spectroscopy (tabbacin polytype), XRD (crystallinity), da SEM (binciken lahani).

Takaddun shaida: Mai yarda da AEC-Q101 (motoci), JEDEC (JEDEC-033), da MIL-PRF-38534 (jin soja).

4. Tallafin Sarkar Kayayyakin Duniya;

Ƙarfin Ƙarfafawa: Fitowa na wata-wata> wafers 10,000 (60% 8-inch), tare da isar da gaggawa na sa'o'i 48.

· Sadarwar Sadarwa: Rufewa a Turai, Arewacin Amurka, da Asiya-Pacific ta hanyar jigilar iska / teku tare da marufi mai sarrafa zafin jiki.

5. Fasaha Co-Ci gaba;

Haɗin gwiwa R&D Labs: Haɗin kai akan haɓaka marufi na wutar lantarki na SiC (misali, haɗin kai na DBC).

· Lasisin IP: Samar da GaN-on-SiC RF lasisin haɓaka fasahar haɓakar epitaxial don rage farashin R&D abokin ciniki.

Takaitawa

SiC (silicon carbide) iri kristal substrates, a matsayin dabarun abu, suna sake fasalin sarƙoƙi na masana'antu na duniya ta hanyar ci gaba a cikin ci gaban crystal, sarrafa lahani, da haɗin kai iri-iri. Ta ci gaba da haɓaka raguwar lahani na wafer, haɓaka samar da 8-inch, da haɓaka dandamali na heteroepitaxial (misali, SiC-on-Diamond), XKH yana ba da ingantaccen dogaro, mafita mai tsada don optoelectronics, sabon kuzari, da masana'antu na ci gaba. Ƙaddamar da ƙaddamarwarmu ga ƙididdigewa yana tabbatar da abokan ciniki suna jagoranci a cikin tsaka-tsakin carbon da tsarin fasaha, suna haifar da zamani na gaba na tsarin yanayin mahalli mai fadi-bandgap.