Musamman GaN-on-SiC Epitaxial Wafers (100mm, 150mm) - Zaɓuɓɓukan SiC da yawa (4H-N, HPSI, 4H/6H-P)

Takaitaccen Bayani:

GaN-on-SiC Epitaxial Wafers ɗinmu na Musamman yana ba da ingantaccen aiki don babban iko, aikace-aikacen mitoci masu girma ta hanyar haɗa keɓaɓɓen kaddarorin Gallium Nitride (GaN) tare da ingantaccen ƙarfin zafi da ƙarfin injinSilicon Carbide (SiC). Akwai a cikin 100mm da 150mm wafer masu girma dabam, waɗannan wafers an gina su akan nau'ikan zaɓuɓɓukan SiC, gami da nau'ikan 4H-N, HPSI, da nau'ikan 4H / 6H-P, waɗanda aka keɓe don biyan takamaiman buƙatu don kayan lantarki, RF amplifiers, da sauran na'urori masu haɓaka semiconductor. Tare da yadudduka na epitaxial da za a iya gyarawa da na musamman na SiC, an tsara wafers ɗinmu don tabbatar da ingantaccen aiki, sarrafa zafi, da amincin buƙatun aikace-aikacen masana'antu.

Aika mana imel

Siffofin

●Kauri na Epitaxial: Customizable daga1.0 µmku3.5m ku, ingantacce don babban iko da aikin mita.

●SiC Substrate Zaɓuɓɓuka: Akwai tare da daban-daban na SiC, ciki har da:

4 H-N: Babban ingancin Nitrogen-doped 4H-SiC don aikace-aikace masu ƙarfi da ƙarfi.
HPSISiC Semi-Insulating High-Tsarki don aikace-aikacen da ke buƙatar keɓewar lantarki.
4H/6H-P: Mixed 4H da 6H-SiC don ma'auni na babban inganci da aminci.

● Girman Wafer: Akwai a ciki100mmkuma150mmdiamita don versatility a cikin sikelin na'urar da haɗin kai.

●High Breakdown Voltage: GaN akan fasahar SiC yana ba da babban ƙarfin rushewa, yana ba da damar aiki mai ƙarfi a cikin aikace-aikacen ƙarfi mai ƙarfi.

●High Thermal ConductivitySiC's inhermal conductivity thermal conductivity (kimanin 490 W/m·K) yana tabbatar da kyakkyawan yanayin zafi don aikace-aikace masu ƙarfi.

Ƙididdiga na Fasaha

Siga	Daraja
Wafer Diamita	100mm, 150mm
Epitaxial Layer Kauri	1.0 µm - 3.5 µm (wanda aka saba da shi)
SiC Substrate Nau'in	4H-N, HPSI, 4H/6H-P
SiC Thermal Conductivity	490 W/m·K
SiC Resistivity	4 H-N: 10^6 Ω·cm,HPSI: Semi-insulating,4H/6H-PSaukewa: 4H/6H
GaN Layer Kauri	1.0µm - 2.0 µm
GaN Carrier Concentration	10^18 cm^-3 zuwa 10^19 cm^-3 (na iya canzawa)
Wafer Surface Quality	Farashin RMS: <1 nm
Yawan Ragewa	<1 x 10^6 cm^-2
Wafar Bow	<50 µm
Wafer Flatness	<5 µm
Matsakaicin Yanayin Aiki	400°C (na al'ada ga na'urorin GaN-on-SiC)

Aikace-aikace

●Lantarki na Wuta:GaN-on-SiC wafers suna ba da ingantaccen inganci da ɓarkewar zafi, yana sa su dace don masu haɓaka wutar lantarki, na'urorin canza wutar lantarki, da da'irar wutar lantarki da ake amfani da su a cikin motocin lantarki, tsarin makamashi mai sabuntawa, da injin masana'antu.
● RF Power Amplifiers:Haɗin GaN da SiC cikakke ne don ƙaƙƙarfan aikace-aikacen RF mai ƙarfi kamar sadarwa, sadarwar tauraron dan adam, da tsarin radar.
● sararin samaniya da tsaro:Waɗannan wafers sun dace da sararin samaniya da fasahar tsaro waɗanda ke buƙatar babban aiki na lantarki da tsarin sadarwa waɗanda zasu iya aiki a ƙarƙashin yanayi mai tsauri.
● Aikace-aikacen mota:Mafi dacewa don tsarin wutar lantarki mai girma a cikin motocin lantarki (EVs), motocin matasan (HEVs), da tashoshi na caji, yana ba da damar canza wutar lantarki mai inganci da sarrafawa.
● Tsarin Soja da Radar:Ana amfani da wafers na GaN-on-SiC a cikin tsarin radar don ingantaccen ingancin su, iyawar sarrafa wutar lantarki, da aikin zafi a cikin mahalli masu buƙata.
●Microwave da Millimeter-Wave Application:Don tsarin sadarwa na zamani na gaba, gami da 5G, GaN-on-SiC yana ba da kyakkyawan aiki a cikin babban ƙarfin microwave da jeri na millimita.

Tambaya&A

Q1: Menene fa'idodin amfani da SiC a matsayin ma'auni na GaN?

A1:Silicon Carbide (SiC) yana ba da ingantaccen ƙarfin wutar lantarki, babban ƙarfin wutar lantarki, da ƙarfin injin idan aka kwatanta da na'urorin gargajiya kamar silicon. Wannan ya sa wafers na GaN-on-SiC ya dace don aikace-aikace masu ƙarfi, mai ƙarfi, da zafin jiki. SiC Substrate yana taimakawa wajen watsar da zafin da na'urorin GaN ke samarwa, inganta aminci da aiki.

Q2: Za a iya daidaita kauri na epitaxial don takamaiman aikace-aikace?

A2:Ee, ana iya daidaita kauri na epitaxial a cikin kewayon1.0 µm zuwa 3.5 µm, dangane da iko da buƙatun aikace-aikacen ku. Za mu iya keɓance kauri na GaN don haɓaka aiki don takamaiman na'urori kamar amplifiers, tsarin RF, ko da'irori masu tsayi.

Q3: Menene bambanci tsakanin 4H-N, HPSI, da 4H/6H-P SiC substrates?

A3:

4 H-N: Nitrogen-doped 4H-SiC ana amfani dashi don aikace-aikacen mitoci masu yawa waɗanda ke buƙatar babban aikin lantarki.
HPSI: High-Purity Semi-Insulating SiC yana samar da keɓancewar lantarki, manufa don aikace-aikacen da ke buƙatar ƙarancin wutar lantarki.
4H/6H-P: Haɗin 4H da 6H-SiC wanda ke daidaita aikin aiki, yana ba da haɗin haɓaka mai ƙarfi da ƙarfi, dacewa da aikace-aikacen lantarki daban-daban.

Q4: Shin waɗannan wafers ɗin GaN-on-SiC sun dace da aikace-aikacen manyan ƙarfi kamar motocin lantarki da makamashin sabuntawa?

A4:Ee, GaN-on-SiC wafers sun dace sosai don aikace-aikace masu ƙarfi kamar motocin lantarki, makamashi mai sabuntawa, da tsarin masana'antu. Babban ƙarfin rugujewar wutar lantarki, babban ƙarfin wutar lantarki, da ikon sarrafa wutar lantarki na na'urorin GaN-on-SiC suna ba su damar yin aiki yadda ya kamata a cikin buƙatar jujjuyawar wutar lantarki da sarrafawa.

Q5: Menene yawan rarrabuwar kawuna ga waɗannan wafers?

A5:Yawan ɓarkewar waɗannan wafers na GaN-on-SiC yawanci<1 x 10^6 cm^-2, wanda ke tabbatar da haɓakar haɓakar haɓakar epitaxial, rage girman lahani da inganta aikin na'urar da aminci.

Q6: Zan iya buƙatar takamaiman girman wafer ko nau'in substrate na SiC?

A6:Ee, muna ba da girman wafer na musamman (100mm da 150mm) da nau'ikan nau'ikan nau'ikan nau'ikan SiC (4H-N, HPSI, 4H/6H-P) don saduwa da takamaiman bukatun aikace-aikacen ku. Da fatan za a tuntuɓe mu don ƙarin zaɓuɓɓukan gyare-gyare da kuma tattauna abubuwan da kuke buƙata.

Q7: Yaya GaN-on-SiC wafers ke yi a cikin matsanancin yanayi?

A7:GaN-on-SiC wafers suna da kyau don matsananciyar mahalli saboda babban kwanciyar hankali na zafin jiki, babban ikon sarrafa ƙarfi, da kuma kyakkyawan damar watsar da zafi. Waɗannan wafers suna aiki da kyau a cikin yanayin zafi mai ƙarfi, ƙarfin ƙarfi, da yanayin mitoci da aka saba fuskanta a sararin samaniya, tsaro, da aikace-aikacen masana'antu.

Kammalawa

GaN-on-SiC Epitaxial Wafers ɗinmu na Musamman yana haɗa manyan kaddarorin GaN da SiC don samar da ingantaccen aiki a cikin babban iko da aikace-aikacen mitoci masu girma. Tare da zaɓuɓɓukan maɓalli na SiC da yawa da yadudduka na epitaxial da za a iya daidaita su, waɗannan wafers sun dace don masana'antu waɗanda ke buƙatar ingantaccen aiki, sarrafa zafi, da aminci. Ko don wutar lantarki, tsarin RF, ko aikace-aikacen tsaro, wafers ɗin mu na GaN-on-SiC yana ba da aiki da sassaucin da kuke buƙata.