Nau'in SiC na Musamman na N Nau'in Dia153/155mm Don Lantarki Mai Wutar Lantarki

Nau'in SiC na Musamman Dia153/155mm Don Lantarki Mai Wutar Lantarki Mai Fitowa Hoton da aka Nuna

Takaitaccen Bayani:

Tsarin iri na Silicon Carbide (SiC) suna aiki a matsayin kayan aiki na asali ga semiconductor na ƙarni na uku, waɗanda aka bambanta su da ƙarfin zafinsu mai yawa, ƙarfin filin lantarki mai ƙarfi, da kuma ƙarfin motsi na lantarki mai yawa. Waɗannan halaye sun sa su zama dole ga na'urorin lantarki masu ƙarfi, na'urorin RF, motocin lantarki (EVs), da aikace-aikacen makamashi mai sabuntawa. XKH ta ƙware a fannin bincike da haɓaka da samar da nau'ikan SiC masu inganci, tana amfani da dabarun ci gaban lu'ulu'u na zamani kamar Sufurin Turare na Jiki (PVT) da kuma Tsabtace Turare Mai Zafi Mai Tsayi (HTCVD) don tabbatar da ingancin lu'ulu'u mafi girma a masana'antu.

Aika mana imel

Siffofi

Gabatar da

XKH tana bayar da nau'ikan iri na SiC masu inci 4, inci 6, da inci 8 tare da maganin N-type/P wanda za'a iya gyarawa, wanda ke cimma matakan juriya na 0.01-0.1 Ω·cm da kuma yawan katsewa ƙasa da 500 cm⁻², wanda hakan ya sa suka dace da ƙera MOSFETs, Schottky Barrier Diodes (SBDs), da IGBTs. Tsarin samar da kayayyaki namu wanda aka haɗa a tsaye ya ƙunshi haɓakar lu'ulu'u, yanke wafer, gogewa, da dubawa, tare da ƙarfin samarwa na wata-wata wanda ya wuce wafers 5,000 don biyan buƙatun cibiyoyin bincike daban-daban, masana'antun semiconductor, da kamfanonin makamashi masu sabuntawa.

Bugu da ƙari, muna samar da mafita na musamman, gami da:

Daidaita yanayin lu'ulu'u (4H-SiC, 6H-SiC)

Magunguna na musamman (aluminum, nitrogen, boron, da sauransu)

Gogewa mai santsi sosai (Ra < 0.5 nm)

XKH tana tallafawa sarrafawa bisa samfura, shawarwari na fasaha, da kuma ƙirar ƙananan rukuni don samar da ingantattun hanyoyin magance matsalar SiC.

Sigogi na fasaha

Wafer ɗin irin silicon carbide
Nau'in Polytype	4H
Kuskuren daidaitawar saman	4°zuwa <11-20>±0.5º
Juriya	keɓancewa
diamita	205±0.5mm
Kauri	600±50μm
Taurin kai	CMP,Ra≤0.2nm
Yawan bututun micropipe	≤1 ea/cm2
Ƙira	≤5, Jimlar Tsawon ≤2*Diamita
Ƙwayoyin gefe/ƙasa	Babu
Alamar laser ta gaba	Babu
Ƙira	≤2, Jimlar Tsawon ≤Diamita
Ƙwayoyin gefe/ƙasa	Babu
Yankunan da aka fi amfani da su	Babu
Alamar laser ta baya	1mm (daga gefen sama)
Gefen	Chamfer
Marufi	Kaset ɗin wafer mai yawa

SiC Iri Substrates - Muhimman Halaye

1. Halayen Jiki Na Musamman

· Babban ƙarfin lantarki mai zafi (~490 W/m·K), wanda ya zarce silicon (Si) da gallium arsenide (GaAs), wanda hakan ya sa ya dace da sanyaya na'urori masu ƙarfin gaske.

· Ƙarfin filin da aka rushe (~3 MV/cm), yana ba da damar aiki mai ɗorewa a ƙarƙashin yanayin ƙarfin lantarki mai girma, yana da mahimmanci ga inverters na EV da na'urorin wutar lantarki na masana'antu.

· Faɗin bandeji mai faɗi (3.2 eV), rage kwararar ruwa a yanayin zafi mai yawa da kuma inganta amincin na'ura.

2. Ingancin Kwalliya Mafi Kyau

· Fasahar haɓaka haɗakar PVT + HTCVD tana rage lahani ga ƙananan bututu, tana kiyaye yawan tarkace a ƙasa da 500 cm⁻².

· Baka/warp mai wafer < 10 μm da kuma kauri a saman Ra < 0.5 nm, yana tabbatar da dacewa da tsarin lithography mai inganci da kuma tsarin adana sirara.

3. Zaɓuɓɓukan Doping Iri-iri

·Nau'in N (wanda aka yi amfani da Nitrogen): Ƙarfin juriya (0.01-0.02 Ω·cm), wanda aka inganta don na'urorin RF masu yawan mita.

· Nau'in P (wanda aka yi da aluminum): Ya dace da MOSFETs masu ƙarfi da IGBTs, yana inganta motsi na jigilar kaya.

· SiC mai rufi da rabi (wanda aka yi da Vanadium): Juriya > 10⁵ Ω·cm, an tsara shi don na'urorin gaba na 5G RF.

4. Kwanciyar Hankali a Muhalli

· Juriyar zafin jiki mai yawa (>1600°C) da kuma taurin radiation, wanda ya dace da sararin samaniya, kayan aikin nukiliya, da sauran yanayi masu tsauri.

Substrates na SiC - Babban Aikace-aikacen

1. Lantarki Mai Lantarki

· Motocin Wutar Lantarki (EVs): Ana amfani da su a cikin na'urorin caji na cikin jirgi (OBC) da inverters don inganta inganci da rage buƙatun sarrafa zafi.

· Tsarin Wutar Lantarki na Masana'antu: Yana haɓaka inverters na photovoltaic da grids masu wayo, yana cimma ingancin canza wutar lantarki sama da kashi 99%.

2. Na'urorin RF

· Tashoshin Tushe na 5G: Substrates na SiC masu rufewa da rabi suna ba da damar amplifiers na wutar lantarki na GaN-on-SiC RF, suna tallafawa watsa siginar mai yawan mita da ƙarfi.

Sadarwar Tauraron Dan Adam: Halayen ƙarancin asara sun sa ya dace da na'urorin da ke da raƙuman milimita.

3. Ma'ajiyar Makamashi da Ajiya Mai Sabuntawa

· Wutar Lantarki ta Rana: SiC MOSFETs yana haɓaka ingancin juyawar DC-AC yayin da yake rage farashin tsarin.

· Tsarin Ajiyar Makamashi (ESS): Yana inganta masu sauya wutar lantarki ta hanyoyi biyu kuma yana tsawaita tsawon rayuwar batirin.

4. Tsaro & Tashar Jiragen Sama

· Tsarin Radar: Ana amfani da na'urorin SiC masu ƙarfi a cikin radar AESA (Active Electronic Scanned Array).

· Gudanar da Wutar Lantarki ta Jiragen Sama: Abubuwan SiC masu jure wa radiation suna da mahimmanci ga ayyukan zurfafan sararin samaniya.

5. Bincike & Fasaha Mai Tasowa

· Kwamfutar Kwamfuta: SiC mai tsarki yana ba da damar yin bincike kan qubit.

· Na'urori Masu auna zafin jiki mai yawa: An yi amfani da su wajen binciken mai da kuma sa ido kan na'urorin sarrafa makamashin nukiliya.

SiC Iri Substrates - Ayyukan XKH

1. Fa'idodin Sarkar Samarwa

· Masana'antu masu haɗaka a tsaye: Cikakken iko daga foda mai tsafta na SiC zuwa wafers ɗin da aka gama, yana tabbatar da lokacin jagora na makonni 4-6 ga samfuran da aka saba.

· Gasar farashi: Tattalin arzikin da aka yi amfani da shi a fannin tattalin arziki yana ba da damar rage farashi da kashi 15-20% idan aka kwatanta da na masu fafatawa, tare da goyon bayan Yarjejeniyoyi na Dogon Lokaci (LTAs).

2. Ayyukan Keɓancewa

· Tsarin lu'ulu'u: 4H-SiC (daidaitacce) ko 6H-SiC (aikace-aikace na musamman).

· Inganta amfani da maganin hana shan kwayoyi: Sifofin N-type/P-type/semi-insulating da aka keɓance.

· Ingantaccen gogewa: gogewar CMP da kuma maganin saman epi-ready (Ra < 0.3 nm).

3. Tallafin Fasaha

· Gwajin samfuri kyauta: Ya haɗa da rahotannin auna tasirin XRD, AFM, da Hall.

· Taimakon kwaikwayon na'ura: Yana tallafawa ci gaban epitaxial da inganta ƙirar na'ura.

4. Amsawa Mai Sauri

· Tsarin samfuri mai ƙarancin girma: Mafi ƙarancin oda na wafers 10, ana isar da su cikin makonni 3.

· Kayayyakin jigilar kaya na duniya: Haɗin gwiwa da DHL da FedEx don isar da kaya daga gida zuwa gida.

5. Tabbatar da Inganci

· Cikakken bincike: Yana rufe yanayin X-ray (XRT) da kuma nazarin yawan lahani.

· Takaddun shaida na ƙasashen duniya: Ya dace da ƙa'idodin IATF 16949 (matakin mota) da AEC-Q101.

Kammalawa

Tsarin iri na XKH na SiC ya yi fice a ingancin lu'ulu'u, kwanciyar hankali a sarkar samar da kayayyaki, da kuma sassaucin keɓancewa, yana ba da wutar lantarki mai ƙarfi, sadarwa ta 5G, makamashi mai sabuntawa, da fasahar tsaro. Muna ci gaba da haɓaka fasahar samar da kayayyaki ta SiC mai inci 8 don ciyar da masana'antar semiconductor ta ƙarni na uku gaba.

Na baya: Farantin yumbu/tire na SiC don mai riƙe wafer mai inci 4 mai inci 6 don ICP

Na gaba: Nau'in SiC Iri Mai Girki Dia 205/203/208 4H-N don Sadarwar Ganuwa