Custom N Nau'in SiC Seed Substrate Dia153/155mm Don Kayan Wutar Lantarki

Custom N Nau'in SiC Seed Substrate Dia153/155mm Don Fitar da Hoton Wutar Lantarki

Takaitaccen Bayani:

Silicon Carbide (SiC) iri substrates suna aiki azaman tushen kayan don semiconductor na ƙarni na uku, waɗanda aka bambanta ta hanyar haɓakar haɓakar yanayin zafi na musamman, ingantaccen ƙarfin filin lantarki, da babban motsi na lantarki. Waɗannan kaddarorin sun sa su zama makawa ga na'urorin lantarki, na'urorin RF, motocin lantarki (EVs), da aikace-aikacen makamashi mai sabuntawa. XKH ya ƙware a cikin R&D da kuma samar da ingantaccen nau'in nau'in iri na SiC, yana amfani da fasahohin haɓaka kristal na ci gaba kamar su Jirgin Ruwa na Jiki (PVT) da Tsarin Haɗaɗɗen Ruwan Ruwa mai Tsayi (HTCVD) don tabbatar da ingancin masana'antu.

Aika mana imel

Siffofin

Gabatarwa

XKH yana ba da 4-inch, 6-inch, da 8-inch SiC iri substrates tare da customizable N-type/P-type doping, cimma resistivity matakan 0.01-0.1 Ω · cm da dislocation yawa kasa 500 cm⁻², sa su manufa domin masana'antu MOSFETs, Schottky Barrier Diodes. Tsarin samar da haɗin gwiwarmu a tsaye yana rufe ci gaban kristal, slicing wafer, gogewa, da dubawa, tare da ƙarfin samarwa na wata-wata wanda ya wuce wafers 5,000 don biyan buƙatun cibiyoyin bincike, masana'antun semiconductor, da kamfanonin makamashi masu sabuntawa.

Bugu da ƙari, muna ba da mafita na al'ada, gami da:

Kirkirar daidaitawa (4H-SiC, 6H-SiC)

Doping na musamman (Aluminum, Nitrogen, Boron, da sauransu)

gyare-gyare mai laushi (Ra <0.5 nm)

XKH yana goyan bayan sarrafa tushen samfurin, shawarwarin fasaha, da ƙaramin tsari don sadar da ingantattun hanyoyin sinadarai na SiC.

Siffofin fasaha

Silicon carbide iri wafer
Polytype	4H
Kuskuren daidaita yanayin saman	4° zuwa <11-20>±0.5º
Resistivity	keɓancewa
Diamita	205 ± 0.5mm
Kauri	600± 50μm
Tashin hankali	CMP, Ra≤0.2nm
Maƙarƙashiya Maɗaukaki	≤1 ea/cm2
Scratches	≤5, Jimlar Tsawon≤2* Diamita
Gefen kwakwalwan kwamfuta / indents	Babu
Alamar Laser ta gaba	Babu
Scratches	≤2, Jimlar Tsawon≤ Diamita
Gefen kwakwalwan kwamfuta / indents	Babu
Yankunan Polytype	Babu
Alamar Laser na baya	1mm (daga saman gefen)
Gefen	Chamfer
Marufi	Multi-wafer cassette

SiC Seed Substrates - Key Halayen

1. Kyawawan Abubuwan Jiki

· High thermal conductivity (~ 490 W / m · K), mahimmanci ya zarce silicon (Si) da gallium arsenide (GaAs), wanda ya sa ya dace don sanyaya na'urar mai ƙarfi mai ƙarfi.

· Ƙarfin filin raguwa (~ 3 MV / cm), yana ba da damar aiki mai ƙarfi a ƙarƙashin babban yanayin ƙarfin lantarki, mai mahimmanci ga EV inverters da masana'antu ikon kayayyaki.

Babban bandgap (3.2 eV), rage kwararar ruwa a yanayin zafi da haɓaka amincin na'urar.

2. Mafi kyawun Crystalline

Fasahar haɓaka matasan PVT + HTCVD tana rage lahani na micropipe, yana riƙe da yawa a ƙasa da 500 cm⁻².

Wafer baka/warp <10 μm da rashin ƙarfi na saman Ra <0.5nm, yana tabbatar da dacewa tare da ingantattun lithography da matakan ƙaddamar da fim na bakin ciki.

3. Zaɓuɓɓukan Doping Daban-daban

Nau'in N (Nitrogen-doped): Ƙananan juriya (0.01-0.02 Ω·cm), ingantacce don na'urorin RF masu girma.

Nau'in P (Aluminum-doped): Madaidaicin ikon MOSFETs da IGBTs, haɓaka motsi mai ɗaukar kaya.

SiC Semi-insulating (Vanadium-doped): Resistivity> 10⁵ Ω·cm, wanda aka keɓance don ƙirar gaba-gaba na 5G RF.

4. Zaman Lafiyar Muhalli

· Juriya mai zafi (> 1600 ° C) da taurin radiation, dace da sararin samaniya, kayan aikin nukiliya, da sauran matsananciyar yanayi.

SiC Seed Substrates - Aikace-aikace na Farko

1. Wutar Lantarki

Motocin Wutar Lantarki (EVs): Ana amfani da su a cikin caja na kan jirgi (OBC) da inverters don inganta inganci da rage buƙatun sarrafa zafi.

· Tsarin wutar lantarki na masana'antu: Yana haɓaka inverters na hotovoltaic da grid mai wayo, cimma> 99% ingantaccen jujjuya wutar lantarki.

2. Na'urorin RF

5G Base Stations: Semi-insulating SiC substrates taimaka GaN-on-SiC RF ikon amplifiers, goyon bayan high-mita, high-ikon siginar watsa.

Sadarwar Tauraron Dan Adam: Halayen ƙarancin hasara sun sa ya dace da na'urori masu raƙuman milimita.

3. Sabunta Makamashi & Ajiye Makamashi

· Ƙarfin Rana: SiC MOSFETs suna haɓaka ingantaccen juzu'i na DC-AC yayin rage farashin tsarin.

Tsare-tsaren Ajiye Makamashi (ESS): Yana haɓaka masu juyawa biyu kuma yana ƙara tsawon rayuwar baturi.

4. Tsaro & Aerospace

· Tsarin Radar: Ana amfani da na'urorin SiC masu ƙarfi a cikin radar AESA (Active Electronically Scanned Array).

· Gudanar da Ƙarfin Jirgin Sama: Abubuwan SiC masu jure radiyo suna da mahimmanci ga ayyukan zurfafa sararin samaniya.

5. Bincike & Fasaha masu tasowa

Ƙididdigar Ƙididdigar Ƙidaya: SiC mai tsafta yana ba da damar bincike na qubit.

· Na'urori masu zafi masu zafi: An tura su a aikin haƙon mai da sa ido kan ma'aunin makamashin nukiliya.

SiC Seed Substrates - Ayyukan XKH

1. Amfanin Sarkar Kawo

· Ƙirƙirar masana'anta ta tsaye: Cikakken iko daga tsaftataccen SiC foda zuwa gama wafers, tabbatar da lokutan gubar na makonni 4-6 don daidaitattun samfuran.

Gasar farashi: Tattalin arzikin ma'auni yana ba da damar 15-20% ƙananan farashi fiye da masu fafatawa, tare da goyan bayan Yarjejeniyar Tsawon Lokaci (LTAs).

2. Sabis na Musamman

· Matsakaicin Crystal: 4H-SiC (misali) ko 6H-SiC (aikace-aikace na musamman).

· Haɓaka abubuwan ƙara kuzari: Nau'in N-nau'i/nau'in P-nau'i na musamman.

Advanced polishing: CMP polishing da epi-shirye surface jiyya (Ra <0.3 nm).

3. Tallafin Fasaha

Gwajin samfurin kyauta: Ya haɗa da XRD, AFM, da rahotannin ma'aunin tasirin Hall.

Taimakon kwaikwaiyo na na'ura: Yana goyan bayan haɓakar epitaxial da haɓaka ƙirar na'urar.

4. Amsa da sauri

Samfurin ƙima mai ƙaranci: Mafi ƙarancin tsari na wafers 10, ana kawowa cikin makonni 3.

· Dabaru na duniya: Haɗin gwiwa tare da DHL da FedEx don isar da gida-gida.

5. Tabbatar da inganci

Duban cikakken tsari: Rufe hoton hoto na X-ray (XRT) da bincike mai yawa.

Takaddun shaida na kasa da kasa: Mai yarda da IATF 16949 (matakin mota) da ka'idojin AEC-Q101.

Kammalawa

Matsalolin iri na SiC na XKH sun yi fice a cikin ingancin crystalline, daidaiton sarkar samar da kayayyaki, da sassauƙan gyare-gyare, hidimar lantarki, sadarwar 5G, makamashi mai sabuntawa, da fasahar tsaro. Muna ci gaba da haɓaka fasahar samar da yawan jama'a ta SiC 8-inch don fitar da masana'antar semiconductor na ƙarni na uku gaba.

Na baya: SiC yumbu farantin / tire don 4inch 6 inch wafer mariƙin na ICP

Na gaba: Musamman SiC Seed Crystal Substrates Dia 205/203/208 4H-N Nau'in don Sadarwar Na gani