Ruwan tabarau na silicon mai rufi monocrystalline silicon mai rufi na musamman mai rufi na AR mai hana tunani
Halayen ruwan tabarau na silicon mai rufi:
1. Aikin gani:
Kewayon watsawa: 1.2-7μm (kusa da infrared zuwa tsakiyar infrared), watsawa >90% a cikin tagar yanayi mai girman 3-5μm (bayan an shafa).
Saboda yawan hasken da ke fitowa (n≈ 3.4@4μm), ya kamata a yi wa fim ɗin hana haske (kamar MgF₂/Y₂O₃) fenti domin rage asarar hasken da ke fitowa daga saman.
2. Daidaiton zafi:
Ƙaramin ma'aunin faɗaɗa zafi (2.6×10⁻⁶/K), juriya ga zafin jiki mai yawa (zafin aiki har zuwa 500℃), ya dace da aikace-aikacen laser mai ƙarfi.
3. Kayayyakin injiniya:
Taurin Mohs 7, juriya ga karce, amma yana da ƙarfi sosai, yana buƙatar kariya daga gefen chamfering.
4. Halayen Rufi:
Customized anti-reflection film (AR@3-5μm), high reflection film (HR@10.6μm for CO₂ laser), bandpass filter film, etc.
Gilashin silicon mai rufi aikace-aikace:
(1) Tsarin ɗaukar hoton zafi na infrared
A matsayin babban ɓangaren ruwan tabarau na infrared (band 3-5μm ko 8-12μm) don sa ido kan tsaro, duba masana'antu da kayan aikin gani na dare na soja.
(2) Tsarin gani na Laser
Laser CO₂ (10.6μm): Gilashin haske mai ƙarfi don masu kunna laser ko sitiyarin haske.
Laser mai zare (1.5-2μm): Ruwan tabarau na fim mai hana haske yana inganta ingancin haɗin gwiwa.
(3) Kayan aikin gwajin Semiconductor
Manufar infrared microscopic don gano lahani na wafer, mai juriya ga lalatawar plasma (ana buƙatar kariya ta musamman ta shafi).
(4) kayan aikin nazarin spectral
A matsayin wani ɓangare na na'urar auna infrared Fourier (FTIR), ana buƙatar babban watsawa da ƙarancin karkacewar gaban raƙuman ruwa.
Sigogi na fasaha:
Ruwan tabarau na silicon mai rufi mai kama da monocrystalline ya zama muhimmin abu da ba za a iya maye gurbinsa ba a tsarin gani na infrared saboda kyawun watsa hasken infrared, kwanciyar hankali mai zafi da kuma halayen rufin da za a iya gyarawa. Ayyukanmu na musamman na musamman suna tabbatar da mafi kyawun aikin ruwan tabarau a aikace-aikacen laser, dubawa da daukar hoto.
| Daidaitacce | Babban Farashi | |
| Kayan Aiki | Silicon | |
| Girman | 5mm-300mm | 5mm-300mm |
| Juriyar Girma | ±0.1mm | ±0.02mm |
| Share Buɗewar Hanya | ≥90% | kashi 95% |
| Ingancin Fuskar | 60/40 | 20/10 |
| Tsakiyar | 3' | 1' |
| Juriyar Tsawon Hankali | ±2% | ±0.5% |
| Shafi | Ba a rufe shi ba, AR, BBAR, Mai nuna haske | |
Sabis na Musamman na XKH
XKH tana ba da cikakken keɓancewa na ruwan tabarau na silicon mai rufi na monocrystalline: Daga zaɓin substrate na silicon monocrystalline (resistivity >1000Ω·cm), daidaitaccen sarrafa gani (siffa/aspheric, daidaiton saman λ/4@633nm), shafi na musamman (anti-reflection/babban fim mai haske/tace, tallafawa ƙira mai yawa), zuwa gwaji mai tsauri (ƙimar watsawa, matakin lalacewar laser, gwajin aminci ga muhalli), tallafawa ƙananan rukuni (guda 10) zuwa samarwa mai girma. Hakanan yana ba da takaddun fasaha (lanƙwasa mai rufi, sigogin gani) da tallafin bayan siyarwa don biyan buƙatun buƙatun tsarin gani na infrared.





