8inch SiC Production sa wafer 4H-N SiC substrate

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8-inch SiC substrates Ana amfani da a high-ikon lantarki na'urorin, kamar ikon MOSFETs (Metal Oxide Semiconductor Field Effect Transistor), Schottky diodes da sauran ikon semiconductor na'urorin.

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Tebur mai zuwa yana nuna ƙayyadaddun ƙayyadaddun wafers ɗin mu na 8inch SiC:

8inch N-type SiC DSP Specs
Lamba	Abu	Naúrar	Production	Bincike	Dummy
1: ma'auni
1.1	nau'in poly	--	4H	4H	4H
1.2	fuskar fuska	°	<11-20>4±0.5	<11-20>4±0.5	<11-20>4±0.5
2:Ma'aunin wutar lantarki
2.1	dopant	--	n-nau'in Nitrogen	n-nau'in Nitrogen	n-nau'in Nitrogen
2.2	resistivity	ku · cm	0.015 ~ 0.025	0.01 ~ 0.03	NA
3:Mechanical siga
3.1	diamita	mm	200± 0.2	200± 0.2	200± 0.2
3.2	kauri	μm	500± 25	500± 25	500± 25
3.3	Matsayin daraja	°	[1-100] ± 5	[1-100] ± 5	[1-100] ± 5
3.4	Zurfin Daraja	mm	1 ~ 1.5	1 ~ 1.5	1 ~ 1.5
3.5	LTV	μm	≤5(10mm*10mm)	≤5(10mm*10mm)	≤10 (10mm*10mm)
3.6	TTV	μm	≤10	≤10	≤15
3.7	Ruku'u	μm	-25-25	-45-45	-65-65
3.8	Warp	μm	≤30	≤50	≤70
3.9	AFM	nm	≤0.2	≤0.2	≤0.2
4:tsari
4.1	micropipe yawa	ku/cm2	≤2	≤10	≤50
4.2	abun ciki na karfe	atom/cm2	≤1E11	≤1E11	NA
4.3	TSD	ku/cm2	≤500	≤1000	NA
4.4	BPD	ku/cm2	≤2000	≤5000	NA
4.5	TED	ku/cm2	≤7000	≤10000	NA
5.Front quality
5.1	gaba	--	Si	Si	Si
5.2	saman gamawa	--	Farashin CMP	Farashin CMP	Farashin CMP
5.3	barbashi	e/wafar	≤100(size≥0.3μm)	NA	NA
5.4	karce	e/wafar	≤5, Jimlar Tsawon≤200mm	NA	NA
5.5	Gefen kwakwalwan kwamfuta / indents / fasa / tabo / gurɓatawa	--	Babu	Babu	NA
5.6	Yankunan Polytype	--	Babu	Yanki ≤10%	Yanki ≤30%
5.7	alamar gaba	--	Babu	Babu	Babu
6:Baya ingancin
6.1	dawo gama	--	C-face MP	C-face MP	C-face MP
6.2	karce	mm	NA	NA	NA
6.3	Gefen lahani na baya kwakwalwan kwamfuta / indents	--	Babu	Babu	NA
6.4	Baƙar fata	nm	Ra ≤5	Ra ≤5	Ra ≤5
6.5	Alamar baya	--	Daraja	Daraja	Daraja
7: zuw
7.1	baki	--	Chamfer	Chamfer	Chamfer
8: kunci
8.1	marufi	--	Epi-shirye tare da injin marufi	Epi-shirye tare da injin marufi	Epi-shirye tare da injin marufi
8.2	marufi	--	Multi-wafer kaset marufi	Multi-wafer kaset marufi	Multi-wafer kaset marufi