6inch SiC Epitaxiy wafer N/P nau'in yarda da musamman

Tsarin shirya wafer ɗin silicon carbide epitaxial shine hanyar amfani da fasahar Chemical Vapor Deposition (CVD). Ga ƙa'idodin fasaha da matakan tsarin shiri masu dacewa:

Ka'idar fasaha:

Rage Tururin Sinadarai: Yin amfani da iskar gas mai amfani a lokacin iskar gas, a ƙarƙashin takamaiman yanayin amsawa, yana ruɓewa kuma yana ajiyewa a kan substrate don samar da siririn fim ɗin da ake so.

Haɗakar iskar gas: Ta hanyar pyrolysis ko fashewar iskar gas, ana canza iskar gas daban-daban a cikin yanayin iskar gas ta hanyar sinadarai a cikin ɗakin amsawa.

Matakan tsarin shiri:

Maganin substrate: Ana tsaftace saman substrate ɗin da kuma yin magani kafin a fara amfani da shi domin tabbatar da inganci da kuma kyawun wafer ɗin epitaxial.

Gyaran ɗakin amsawa: daidaita zafin jiki, matsin lamba da saurin kwararar ɗakin amsawa da sauran sigogi don tabbatar da kwanciyar hankali da kuma kula da yanayin amsawa.

Samar da kayan aiki: samar da kayan aikin iskar gas da ake buƙata a cikin ɗakin amsawa, haɗawa da kuma sarrafa yawan kwararar ruwa kamar yadda ake buƙata.

Tsarin amsawa: Ta hanyar dumama ɗakin amsawa, abincin da ke cikin iskar gas yana fuskantar amsawar sinadarai a cikin ɗakin don samar da wurin da ake so, watau fim ɗin silicon carbide.

Sanyaya da sauke kaya: A ƙarshen amsawar, ana rage zafin jiki a hankali don ya huce ya kuma ƙarfafa ajiyar da ke cikin ɗakin amsawar.

Annealing na Epitaxial wafer da kuma bayan an sarrafa shi: ana cire wafer ɗin epitaxial da aka ajiye sannan a sake sarrafa shi don inganta halayensa na lantarki da na gani.

Matakai da yanayin takamaiman tsarin shirya wafer na silicon carbide na iya bambanta dangane da takamaiman kayan aiki da buƙatun. Abin da ke sama kawai tsarin aiwatarwa ne na gabaɗaya, ana buƙatar gyara takamaiman aikin kuma a inganta shi gwargwadon ainihin yanayin.