6inch SiC Epitaxyy wafer N/P nau'in karba na musamman

6inch SiC Epitaxiy wafer nau'in N/P karban Hoton da aka Fitar da shi

Takaitaccen Bayani:

wani samar da 4, 6, 8 inch silicon carbide epitaxial wafer da epitaxial foundry sabis, samar (600V ~ 3300V) ikon na'urorin ciki har da SBD, JBS, PiN, MOSFET, JFET, BJT, GTO, IGBT da sauransu.

Za mu iya ba da 4-inch da 6-inch SiC epitaxial wafers don ƙirƙira na na'urorin wuta ciki har da SBD JBS PiN MOSFET JFET BJT GTO & IGBT daga 600V har zuwa 3300V

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Cikakken Bayani

Tags samfurin

Tsarin shirye-shiryen silicon carbide epitaxial wafer hanya ce ta amfani da fasahar Vapor Deposition (CVD). Wadannan su ne ka'idodin fasaha da suka dace da matakan tsari:

Ƙa'idar fasaha:

Tufafin Rufin Chemical: Yin amfani da ɗanyen iskar gas a cikin lokacin iskar, a ƙarƙashin takamaiman yanayin halayen, an lalata shi kuma a ajiye shi a kan madaidaicin don samar da fim ɗin da ake so.

Gas-lokaci dauki: Ta hanyar pyrolysis ko fashe dauki, daban-daban albarkatun kasa iskar gas a cikin lokaci na gas ana canza sunadaran a cikin dauki dakin.

Matakan tsari na shiri:

Jiyya na Substrate: An ƙaddamar da substrate don tsaftacewa da tsaftacewa don tabbatar da inganci da crystallinity na wafer epitaxial.

Gyaran ɗaki na amsawa: daidaita yanayin zafi, matsa lamba da ƙimar kwararar ɗakin amsawa da sauran sigogi don tabbatar da kwanciyar hankali da sarrafa yanayin halayen.

Raw kayan samar: samar da albarkatun gas da ake buƙata a cikin ɗakin amsawa, haɗawa da sarrafa ƙimar kwarara kamar yadda ake buƙata.

Tsarin amsawa: Ta hanyar dumama ɗakin amsawa, gaseous feedstock yana fuskantar wani sinadari a cikin ɗakin don samar da ajiyar da ake so, watau fim ɗin silicon carbide.

Sanyaya da saukewa: A ƙarshen abin da aka yi, ana saukar da zafin jiki a hankali don yin sanyi da ƙarfafa adibas a cikin ɗakin amsawa.

Epitaxial wafer annealing da post-processing: Ajiye wafer na epitaxial an cire shi kuma an sarrafa shi don inganta kayan lantarki da na gani.

Takamaiman matakai da yanayin tsarin shirye-shiryen wafer na silicon carbide epitaxial wafer na iya bambanta dangane da takamaiman kayan aiki da buƙatu. Abin da ke sama kawai tsarin tafiyar da tsari ne kawai da ka'ida, takamaiman aiki yana buƙatar daidaitawa da ingantawa bisa ga ainihin halin da ake ciki.