6inch HPSI SiC substrate wafer Silicon Carbide Semi-cin mutuncin SiC wafers

Hanyoyin haɓaka na yanzu don SiC kristal guda ɗaya sun haɗa da abubuwa uku masu zuwa: Hanyar lokaci na ruwa, hanyar saka tururi mai zafi mai zafi, da hanyar jigilar lokaci ta tururi (PVT). Daga cikin su, hanyar PVT ita ce mafi yawan bincike da fasaha na fasaha don ci gaban SiC guda ɗaya, kuma matsalolin fasaha shine:

(1) SiC guda crystal a cikin babban zazzabi na 2300 ° C sama da rufaffiyar graphite ɗakin don kammala "m - gas - m" hira recrystallisation tsari, da girma sake zagayowar ne dogon, wuya a sarrafa, da kuma yiwuwa ga microtubules, inclusions da sauran lahani.

(2) Silicon carbide guda crystal, ciki har da fiye da 200 daban-daban crystal iri, amma samar da general kawai daya crystal irin, sauki don samar da crystal irin canji a cikin ci gaban tsari sakamakon Multi-type inclusions lahani, da shirye-shiryen tsari na guda takamaiman crystal irin da wuya a sarrafa da kwanciyar hankali na tsari, misali, na halin yanzu mainstream na 4H-type.

(3) Silicon carbide guda crystal girma thermal filin akwai zafin jiki gradient, sakamakon da crystal girma tsari akwai ƴan asalin ciki danniya da sakamakon dislocations, kurakurai da sauran lahani jawo.

(4) Silicon carbide guda crystal girma tsari bukatar tsananin sarrafa gabatarwar waje datti, don samun wani sosai high tsarki Semi-insulating crystal ko directionally doped conductive crystal. Don ɓangarorin siliki-carbide da aka yi amfani da su a cikin na'urorin RF, ana buƙatar samun kayan lantarki ta hanyar sarrafa ƙarancin ƙarancin ƙazanta da takamaiman nau'ikan lahani a cikin kristal.