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Wafer ɗin SiC mai inci 6 na HPSI SiC mai siffar simintin silicon Carbide mai siffar simintin sigina

Wafer ɗin SiC mai inci 6 na HPSI SiC mai siffar silicon Carbide mai siffar semi-insulting SiC Hoton da aka nuna
  • Wafer ɗin SiC mai inci 6 na HPSI SiC mai siffar simintin silicon Carbide mai siffar simintin sigina
  • Wafer ɗin SiC mai inci 6 na HPSI SiC mai siffar simintin silicon Carbide mai siffar simintin sigina

Takaitaccen Bayani:

Wafer SiC mai inganci mai kyau (Silicon Carbide daga SICC) zuwa masana'antar lantarki da optoelectronic. Wafer SiC mai inci 3 kayan semiconductor ne na zamani, wafers ɗin silicon-carbide mai inci 3 diamita. An yi nufin wafers ɗin ne don ƙera na'urorin lantarki, RF da optoelectronic.


Siffofi

Fasahar Ci Gaban Silicon Carbide Crystal SiC ta PVT

Hanyoyin girma na yanzu na lu'ulu'u guda ɗaya na SiC sun haɗa da waɗannan abubuwa guda uku: hanyar lokaci na ruwa, hanyar adana tururin sinadarai mai zafi, da hanyar jigilar tururin jiki (PVT). Daga cikinsu, hanyar PVT ita ce fasaha mafi bincike da girma don haɓakar lu'ulu'u guda ɗaya na SiC, kuma matsalolin fasaha sune:

(1) SiC lu'ulu'u ɗaya a cikin zafin jiki mai zafi na 2300 ° C sama da ɗakin graphite da aka rufe don kammala tsarin sake fasalin "mai ƙarfi - iskar gas - mai ƙarfi", zagayowar girma tana da tsayi, tana da wahalar sarrafawa, kuma tana iya kamuwa da ƙananan tubules, abubuwan haɗawa da sauran lahani.

(2) Lu'ulu'u ɗaya na silicon carbide, wanda ya haɗa da nau'ikan lu'ulu'u sama da 200 daban-daban, amma samar da nau'in lu'ulu'u ɗaya kawai, sauƙin samar da canjin nau'in lu'ulu'u a cikin tsarin girma wanda ke haifar da lahani na nau'ikan da yawa, tsarin shirya wani takamaiman nau'in lu'ulu'u yana da wuya a sarrafa kwanciyar hankali na tsarin, misali, babban abin da ke cikin nau'in 4H na yanzu.

(3) Filin zafi na girmar lu'ulu'u na silicon carbide akwai yanayin zafi, wanda ke haifar da tsarin girmar lu'ulu'u akwai damuwa ta ciki da kuma raguwar da ke faruwa, kurakurai da sauran lahani da ke faruwa.

(4) Tsarin girma na lu'ulu'u guda ɗaya na silicon carbide yana buƙatar sarrafa shigar da ƙazanta na waje sosai, don samun lu'ulu'u mai tsafta sosai ko lu'ulu'u mai jure wa yanayi. Ga abubuwan da aka yi amfani da su a cikin na'urorin RF, ana buƙatar cimma halayen lantarki ta hanyar sarrafa ƙarancin yawan ƙazanta da takamaiman nau'ikan lahani a cikin lu'ulu'u.

Cikakken Zane

Wafer ɗin SiC mai inci 6 na HPSI SiC mai siffar silicon Carbide mai siffar semi-insulting SiC 1
Wafer ɗin SiC mai inci 6 na HPSI SiC mai siffar silicon Carbide mai siffar semi-insulting SiC 2
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    • Kayayyaki Masu Alaƙa

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    Danna Shigar don bincike ko ESC don rufewa