Inci 6 GaN-On-Sapphire
Wafer ɗin Epi-Layer mai tsawon inci 150 na GaN akan Silicon/Sapphire/SiC Wafer ɗin Epi-Layer na Gallium nitride mai tsawon inci 6
Wafer ɗin sapphire mai inci 6 kayan semiconductor ne mai inganci wanda ya ƙunshi yadudduka na gallium nitride (GaN) da aka noma a kan sapphire substrate. Kayan yana da kyawawan halayen jigilar lantarki kuma ya dace da ƙera na'urori masu ƙarfin lantarki da mita mai yawa.
Hanyar ƙera: Tsarin ƙera ya ƙunshi haɓaka yadudduka na GaN akan wani abu mai kama da sapphire ta amfani da dabarun zamani kamar ƙarfe-organic chemical tururi deposition (MOCVD) ko molecular beam epitaxy (MBE). Ana gudanar da tsarin ɗebewa a ƙarƙashin yanayi mai kyau don tabbatar da ingancin lu'ulu'u mai kyau da kuma fim ɗin iri ɗaya.
Aikace-aikacen GaN-On-Sapphire mai inci 6: Ana amfani da guntun sapphire mai inci 6 sosai a cikin sadarwa ta microwave, tsarin radar, fasahar mara waya da optoelectronics.
Wasu aikace-aikacen gama gari sun haɗa da
1. Amplifier mai ƙarfin Rf
2. Masana'antar hasken LED
3. Kayan aikin sadarwa mara waya na cibiyar sadarwa
4. Na'urorin lantarki a cikin yanayin zafi mai yawa
5. Na'urorin lantarki na optoelectronic
Bayanin Samfuri
- Girman: Diamita na substrate shine inci 6 (kimanin mm 150).
- Ingancin saman: An goge saman sosai don samar da kyakkyawan ingancin madubi.
- Kauri: Ana iya keɓance kauri na layin GaN bisa ga takamaiman buƙatu.
- Marufi: An cika substrate ɗin da kayan hana lalacewa don hana lalacewa yayin jigilar kaya.
- Gefen da aka sanya: Substrate ɗin yana da takamaiman gefunan matsayi waɗanda ke sauƙaƙa daidaitawa da aiki yayin shirya na'urar.
- Sauran sigogi: Za a iya daidaita takamaiman sigogi kamar siriri, juriya da yawan shan ƙwayoyi bisa ga buƙatun abokin ciniki.
Tare da kyawawan kayansu da aikace-aikace iri-iri, wafers ɗin sapphire mai inci 6 zaɓi ne mai aminci don haɓaka na'urorin semiconductor masu aiki mai kyau a masana'antu daban-daban.
| Substrate | 6" 1mm <111> nau'in p Si | 6" 1mm <111> nau'in p Si |
| Epi Mai Kauri Matsakaicin | ~5um | ~7um |
| Epi ThickUnif | <2% | <2% |
| Rukayya | +/- 45um | +/- 45um |
| Fashewa | <5mm | <5mm |
| Tsarin BV na tsaye | >1000V | >1400V |
| HEMT Al% | 25-35% | 25-35% |
| Kauri na HEMT Matsakaicin matsakaici | 20-30nm | 20-30nm |
| Murfin Insitu SiN | 5-60nm | 5-60nm |
| 2DEG conc. | ~1013cm-2 | ~1013cm-2 |
| Motsi | ~2000cm2/Vs (<2%) | ~2000cm2/Vs (<2%) |
| Rsh | <330ohm/sq (<2%) | <330ohm/sq (<2%) |
Cikakken Zane
