3inch Dia76.2mm SiC substrates HPSI Prime Research da Dummy grade

Conductive substrate: yana nufin resistivity na 15 ~ 30mΩ-cm silicon carbide substrate. Za'a iya ƙara yin amfani da wafer na siliki na siliki na epitaxial wanda aka girma daga madaidaicin siliki carbide substrate zuwa na'urorin wuta, waɗanda ake amfani da su sosai a cikin sabbin motocin makamashi, photovoltaics, grids mai wayo, da jigilar jirgin ƙasa.

Semi-insulating substrate yana nufin juriya sama da 100000Ω-cm silicon carbide substrate, galibi ana amfani da shi wajen kera na'urorin mitar rediyo na gallium nitride, shine tushen filin sadarwar mara waya.

Abu ne na asali a fagen sadarwa mara waya.

Silicon carbide conductive and semi-insulating substrates ana amfani da su a cikin kewayon na'urorin lantarki da na'urorin wuta, gami da amma ba'a iyakance ga masu zuwa ba:

Na'urorin semiconductor masu ƙarfi (mai gudanarwa): Silicon carbide substrates suna da ƙarfin fashewar filin ƙarfi da haɓakar thermal, kuma sun dace da samar da transistor masu ƙarfi da diodes da sauran na'urori.

Na'urorin lantarki na RF (rami-insulated): Silicon Carbide substrates suna da babban saurin sauyawa da juriya na ƙarfi, dacewa da aikace-aikace kamar amplifiers na RF, na'urorin microwave da manyan mitar mitoci.

Na'urorin Optoelectronic (Semi-insulated): Silicon carbide substrates suna da tazarar makamashi mai faɗi da kwanciyar hankali mai ƙarfi, dacewa da yin photodiodes, ƙwayoyin hasken rana da diodes laser da sauran na'urori.

Na'urori masu auna zafin jiki (mai aiki): Silicon carbide substrates suna da babban yanayin zafi da kwanciyar hankali, wanda ya dace da samar da na'urori masu auna zafin jiki da na'urorin auna zafin jiki.

Tsarin samarwa da aikace-aikacen silicon carbide conductive da Semi-insulating substrates suna da fa'idodi da yawa da dama, suna ba da sabbin damar haɓaka na'urorin lantarki da na'urorin wuta.