150mm 6 inch 0.7mm 0.5mm Sapphire Wafer Substrate Carrier C-Plane SSP/DSP

Takaitaccen Bayani:

Duk abubuwan da ke sama daidai kwatancin lu'ulu'u na sapphire ne. Kyakkyawan aikin kristal sapphire yana sa shi yadu amfani da shi a cikin manyan fasahohin fasaha. Tare da saurin ci gaban masana'antar LED, buƙatar kayan kristal sapphire kuma yana ƙaruwa.

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Cikakken Bayani

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Aikace-aikace

Aikace-aikace don wafer sapphire mai inci 6 sun haɗa da:

1. LED masana'antu: sapphire wafer za a iya amfani da a matsayin substrate na LED kwakwalwan kwamfuta, da taurin da thermal watsin iya inganta kwanciyar hankali da kuma sabis rayuwa na LED kwakwalwan kwamfuta.

2. Laser masana'antu: Sapphire wafer kuma za a iya amfani da a matsayin substrate na Laser, don taimaka inganta yi na Laser da tsawaita rayuwar sabis.

3. Semiconductor masana'antu: Sapphire wafers ana amfani da ko'ina wajen kera na'urorin lantarki da na optoelectronic, ciki har da kira na gani, hasken rana, high-mita lantarki na'urorin, da dai sauransu.

4. Sauran aikace-aikace: Sapphire wafer kuma za a iya amfani dashi don kera allon taɓawa, na'urorin gani, siraran fim ɗin hasken rana da sauran samfuran fasaha.

Ƙayyadaddun bayanai

Kayan abu	Babban tsarki guda kristal Al2O3, wafer sapphire.
Girma	150 mm +/- 0.05 mm, 6 inci
Kauri	1300 +/- 25 um
Gabatarwa	C jirgin sama (0001) kashe M (1-100) jirgin sama 0.2 +/- 0.05 digiri
Matsakaicin matakin farko	Jirgin sama +/- 1 digiri
Tsawon lebur na farko	47.5 mm +/- 1 mm
Jimlar Bambancin Kauri (TTV)	<20 ku
Ruku'u	<25 ku
Warp	<25 ku
Thermal Expansion Coefficient	6.66 x 10-6 / °C daidai da axis C, 5 x 10-6 /°C daidai da axis C
Ƙarfin Dielectric	4.8 x 105 V/cm
Dielectric Constant	11.5 (1 MHz) tare da axis C, 9.3 (1 MHz) daidai da axis C
Dielectric Loss Tangent (aka dissipation factor)	kasa da 1 x 10-4
Thermal Conductivity	40 W/(mK) a 20 ℃
goge baki	Goge gefe guda (SSP) ko goge gefe biyu (DSP) Ra <0.5 nm (ta AFM). Gefen baya na wafer SSP ya kasance ƙasa mai kyau zuwa Ra = 0.8 - 1.2 um.
watsawa	88% +/-1% @460 nm