6 inch Conductive SiC Composite Substrate 4H Diamita 150mm Ra≤0.2nm Warp≤35μm

Takaitaccen Bayani:

Ƙunƙarar ƙoƙarin masana'antar semiconductor na neman mafi girma aiki da ƙarancin farashi, 6-inch composite substrate SiC ya fito. Ta hanyar sabbin fasahohin hada kayan abu, wannan wafer mai inci 6 yana samun kashi 85% na aikin wafers 8-inch na gargajiya yayin da yake kashe kashi 60% kawai. Na'urorin wutar lantarki a aikace-aikacen yau da kullun kamar sabbin tashoshin cajin abin hawa makamashi, na'urorin wutar lantarki ta 5G, har ma da ma'aunin mitoci masu canzawa a cikin na'urori masu ƙima na iya riga suna amfani da nau'ikan nau'ikan. Ƙwararrun haɓakar haɓakar haɓakar Layer ɗin mu da yawa yana ba da damar mu'amalar haɗin gwal na matakin atomic akan sansanonin SiC, tare da ƙimar yanayin ƙasa ƙasa 1 × 10¹¹/cm²·eV - ƙayyadaddun ƙayyadaddun da suka kai ga manyan matakan duniya.

Aika mana imel

Cikakken Bayani

Tags samfurin

Siffofin fasaha

Abubuwa	Productiondaraja	Dummydaraja
Diamita	6-8 inci	6-8 inci
Kauri	350/500± 25.0 μm	350/500± 25.0 μm
Polytype	4H	4H
Resistivity	0.015-0.025 ohm · cm	0.015-0.025 ohm · cm
TTV	≤5m ku	≤20 μm
Warp	≤35 μm	≤55 μm
Gaba (Si-face) rashin ƙarfi	Ra≤0.2 nm (5μm×5μm)	Ra≤0.2 nm (5μm×5μm)

Mabuɗin Siffofin

1.Cost Advantage: Mu 6-inch conductive SiC composite substrate yana amfani da fasaha na "sakamakon buffer Layer" na mallakar mallaka wanda ke inganta abun da ke ciki don rage farashin albarkatun ƙasa ta 38% yayin da yake riƙe kyakkyawan aikin lantarki. Ma'auni na gaske sun nuna cewa na'urorin MOSFET 650V da ke amfani da wannan kayan aikin sun sami raguwar 42% cikin farashi a kowane yanki idan aka kwatanta da mafita na al'ada, wanda ke da mahimmanci don haɓaka karɓar na'urar SiC a cikin kayan lantarki na mabukaci.
2.Excellent Conductive Properties: Ta hanyar daidai nitrogen doping kula matakai, mu 6-inch conductive SiC composite substrate cimma matsananci-low resistivity na 0.012-0.022Ω · cm, tare da bambancin sarrafawa a cikin ± 5%. Musamman ma, muna kula da daidaiton tsayayya ko da a cikin yanki na gefen 5mm na wafer, yana magance matsalar tasirin sakamako mai tsayi a cikin masana'antar.
3.Thermal Performance: A 1200V / 50A module ci gaba ta yin amfani da mu substrate nuna kawai 45 ℃ junction zafin jiki Yunƙurin sama na yanayi a full load aiki - 65 ℃ m fiye da m silicon-tushen na'urorin. An kunna wannan ta hanyar "tashar thermal tashar mu ta 3D" tsarin hadadden tsari wanda ke inganta haɓakar zafin jiki na gefe zuwa 380W/m·K da kuma daidaitawar thermal na tsaye zuwa 290W/m·K.
4.Process Compatibility: Domin tsarin na musamman na 6-inch conductive SiC composite substrates, mun ɓullo da wani matching stealth Laser dicing tsari cimma 200mm / s sabon gudun yayin da iko gefen chipping kasa 0.3μm. Bugu da ƙari, muna ba da zaɓuɓɓukan da aka riga aka yi nickel-plated waɗanda ke ba da damar haɗin kai kai tsaye, ceton abokan ciniki matakan tsari biyu.

Babban Aikace-aikace

Kayan Aikin Gishiri Mai Mahimmanci:

A cikin tsarin watsa wutar lantarki mai ƙarfi kai tsaye (UHVDC) da ke aiki a ± 800kV, na'urorin IGCT waɗanda ke amfani da 6-inch masu haɗa abubuwan haɗin gwiwar SiC ɗinmu suna nuna ingantaccen haɓaka aikin. Waɗannan na'urori sun sami raguwar 55% a cikin asarar canzawa yayin tafiyar matakai, yayin da haɓaka ingantaccen tsarin gabaɗaya ya wuce 99.2%. Maɗaukakin haɓakar zafin jiki na substrates (380W/m·K) yana ba da ƙarancin ƙirar ƙira waɗanda ke rage sawun tashar da kashi 25% idan aka kwatanta da na al'ada na tushen silicon.

Sabbin Motar Wutar Wutar Lantarki:

Tsarin tuƙi wanda ke haɗa abubuwan haɗin SiC ɗinmu na 6-inch yana samun ƙarfin ƙarfin inverter wanda ba a taɓa ganin irinsa ba na 45kW/L - haɓaka 60% akan ƙirar tushen silicon 400V na baya. Mafi ban sha'awa, tsarin yana kula da ingancin 98% a duk faɗin yanayin zafin aiki daga -40 ℃ zuwa + 175 ℃, yana magance ƙalubalen ayyukan sanyi-yanayin da suka addabi EV a cikin yanayin arewa. Gwajin gwaji na zahiri ya nuna karuwar kashi 7.5% a cikin kewayon hunturu don motocin da ke da wannan fasaha.

Matsakaicin Matsalolin Masana'antu:

Ɗaukar kayan aikin mu a cikin na'urori masu ƙarfi na fasaha (IPMs) don tsarin servo na masana'antu yana canza sarrafa kansa. A cikin cibiyoyin injina na CNC, waɗannan samfuran suna ba da 40% saurin amsawar mota (rage lokacin haɓakawa daga 50ms zuwa 30ms) yayin yanke amo na lantarki ta 15dB zuwa 65dB(A).

Lantarki na Mabukaci:

Juyin juya halin na'urorin lantarki na mabukaci yana ci gaba tare da kayan aikin mu yana ba da damar caja mai sauri na 65W GaN na gaba. Waɗannan ƙananan adaftan wutar lantarki suna samun raguwar ƙarar 30% (har zuwa 45cm³) yayin da suke ci gaba da fitar da wutar lantarki, godiya ga ingantattun halaye masu sauyawa na ƙirar tushen SiC. Hoto na thermal yana nuna matsakaicin yanayin yanayin yanayin 68 ° C yayin ci gaba da aiki - 22°C mai sanyaya fiye da ƙirar al'ada - yana haɓaka rayuwar samfuri da aminci sosai.

XKH Sabis na Musamman

XKH yana ba da cikakken goyon baya na keɓancewa don 6-inch masu sarrafa abubuwan haɗin SiC:

Daidaita kauri: Zaɓuɓɓuka gami da 200μm, 300μm, da ƙayyadaddun μm 350μm
2. Resistivity Control: Daidaitacce n-type maida hankali na doping daga 1×10¹⁸ zuwa 5×10¹⁸ cm⁻³

3. Crystal Orientation: Taimako ga mahara fuskantarwa ciki har da (0001) kashe-axis 4 ° ko 8 °

4. Sabis na Gwaji: Cikakken rahotannin gwajin matakin wafer

Lokacin jagoranmu na yanzu daga samfuri zuwa samarwa da yawa zai iya zama gajere kamar makonni 8. Don abokan ciniki masu mahimmanci, muna ba da sabis na haɓaka tsari na sadaukarwa don tabbatar da cikakkiyar dacewa tare da buƙatun na'urar.