Substrate Mai Inci 6 Mai Raɗaɗin SiC Mai Haɗaka 4H Diamita 150mm Ra≤0.2nm Warp≤35μm

Takaitaccen Bayani:

Sakamakon ƙoƙarin masana'antar semiconductor na samar da mafi girman aiki da ƙarancin farashi, an sami babban sinadari mai sarrafa SiC mai inci 6. Ta hanyar fasahar haɗa kayan aiki mai ƙirƙira, wannan sinadari mai inci 6 ya cimma kashi 85% na aikin sinadari mai inci 8 na gargajiya yayin da yake kashe kashi 60% kawai. Na'urorin wutar lantarki a aikace-aikacen yau da kullun kamar sabbin tashoshin caji na abin hawa, na'urorin wutar lantarki na tashar tushe ta 5G, har ma da na'urorin mita masu canzawa a cikin kayan aikin gida masu tsada na iya amfani da sinadari irin wannan. Fasahar haɓaka epitaxial ɗinmu mai lasisi da yawa tana ba da damar haɗa sinadari mai faɗi a matakin atomic akan sansanonin SiC, tare da yawan yanayin haɗawa ƙasa da 1×10¹¹¹/cm²·eV - ƙayyadaddun bayanai wanda ya kai matsayi mafi girma a duniya.

Aika mana imel

Siffofi

Sigogi na fasaha

Abubuwa	Samarwamaki	Wawamaki
diamita	Inci 6-8	Inci 6-8
Kauri	350/500±25.0 μm	350/500±25.0 μm
Nau'in Polytype	4H	4H
Juriya	0.015-0.025 ohm·cm	0.015-0.025 ohm·cm
TTV	≤5 μm	≤20 μm
Warp	≤35 μm	≤55 μm
Tsananin gaba (Si-fuska)	Ra≤0.2 nm (5μm×5μm)	Ra≤0.2 nm (5μm×5μm)

Mahimman Sifofi

1. Fa'idar Farashi: Tsarin haɗin SiC mai inci 6 mai amfani da wutar lantarki yana amfani da fasahar "layin buffer mai daraja" ta mallakar kayan aiki wanda ke inganta tsarin kayan don rage farashin kayan aiki da kashi 38% yayin da yake kula da ingantaccen aikin lantarki. Ma'aunin gaske ya nuna cewa na'urorin MOSFET 650V waɗanda ke amfani da wannan substrate sun sami raguwar kashi 42% a cikin farashi a kowane yanki idan aka kwatanta da mafita na gargajiya, wanda yake da mahimmanci don haɓaka karɓar na'urar SiC a cikin kayan lantarki na masu amfani.
2. Kyawawan Halayen Mai Gudarwa: Ta hanyar ingantattun hanyoyin sarrafa sinadarin nitrogen, sinadarin mu mai inci 6 mai dauke da sinadarin SiC yana samun ƙarancin juriya na 0.012-0.022Ω·cm, tare da sarrafa bambancin a cikin ±5%. Abin lura shi ne, muna kiyaye daidaiton juriya ko da a cikin yankin gefen 5mm na wafer, wanda ke magance matsalar tasirin gefen da ta daɗe tana wanzuwa a masana'antar.
3. Aikin Zafi: Wani na'urar 1200V/50A da aka ƙirƙira ta amfani da substrate ɗinmu tana nuna ƙaruwar zafin mahaɗin 45℃ kawai sama da yanayi a lokacin cikakken aiki - ƙasa da na'urorin da aka yi amfani da silicon iri ɗaya - 65℃ ƙasa da na'urorin da aka yi amfani da su ta hanyar silicon. Wannan ya samo asali ne ta hanyar tsarin haɗin gwiwarmu na "tashar zafi ta 3D" wanda ke inganta watsawar zafi ta gefe zuwa 380W/m·K da watsawar zafi ta tsaye zuwa 290W/m·K.
4. Daidaita Tsarin Aiki: Don tsarin musamman na substrates masu sarrafa SiC mai inci 6, mun ƙirƙiri tsarin yanke laser mai daidaitawa wanda ya kai saurin yankewa 200mm/s yayin da muke sarrafa guntun gefen ƙasa da 0.3μm. Bugu da ƙari, muna ba da zaɓuɓɓukan substrate da aka riga aka yi da nickel waɗanda ke ba da damar haɗin kai tsaye, wanda ke adana abokan ciniki matakai biyu na aiki.

Babban Aikace-aikace

Kayan Aikin Grid Mai Wayo Mai Muhimmanci:

A cikin tsarin watsa wutar lantarki mai ƙarfin lantarki mai ƙarfi (UHVDC) wanda ke aiki a ±800kV, na'urorin IGCT da ke amfani da substrates ɗinmu na SiC masu inci 6 suna nuna haɓaka aiki mai ban mamaki. Waɗannan na'urori suna samun raguwar asarar sauyawa da kashi 55% yayin ayyukan sauyawa, yayin da suke ƙara ingancin tsarin gabaɗaya zuwa sama da kashi 99.2%. Mafi kyawun watsa wutar lantarki mai zafi (380W/m·K) na substrates yana ba da damar ƙirar masu canza ƙananan abubuwa waɗanda ke rage sawun tashar substation da kashi 25% idan aka kwatanta da mafita na yau da kullun da aka yi da silicon.

Sabbin Motocin Ƙarfin Wutar Lantarki:

Tsarin tuƙi wanda ya haɗa da substrates ɗinmu na SiC mai inci 6 ya cimma ƙarfin inverter da ba a taɓa gani ba na 45kW/L - wani ci gaba na 60% idan aka kwatanta da ƙirar su ta baya ta 400V mai tushen silicon. Abin mamaki, tsarin yana riƙe da inganci na 98% a duk faɗin yanayin zafin aiki daga -40℃ zuwa +175℃, yana magance ƙalubalen aikin sanyi da suka shafi ɗaukar EV a yanayin arewa. Gwaje-gwaje na gaske sun nuna ƙaruwar 7.5% a yanayin hunturu ga motocin da ke da wannan fasaha.

Motocin Mita Masu Canzawa na Masana'antu:

Amfani da na'urorinmu a cikin na'urorin wutar lantarki masu hankali (IPMs) don tsarin servo na masana'antu yana canza tsarin sarrafa kansa na masana'antu. A cikin cibiyoyin injinan CNC, waɗannan na'urorin suna ba da amsa mai sauri da kashi 40% (yana rage lokacin hanzartawa daga 50ms zuwa 30ms) yayin da suke rage hayaniyar lantarki da 15dB zuwa 65dB(A).

Kayan Lantarki na Masu Amfani:

Juyin juya halin kayan lantarki na masu amfani ya ci gaba tare da abubuwan da muke amfani da su don ba da damar caji mai sauri na GaN mai sauri na ƙarni na gaba 65W. Waɗannan ƙananan adaftar wutar lantarki sun sami raguwar girma da kashi 30% (ƙasa zuwa 45cm³) yayin da suke ci gaba da fitar da cikakken wutar lantarki, godiya ga mafi kyawun halayen sauyawa na ƙira masu tushen SiC. Hoton zafi yana nuna matsakaicin yanayin zafi na 68°C kawai yayin aiki mai ci gaba - 22°C ya fi sanyi fiye da ƙira na al'ada - yana inganta tsawon rayuwar samfur da aminci sosai.

Ayyukan Keɓancewa na XKH

XKH yana ba da cikakken tallafin keɓancewa don abubuwan haɗin SiC masu inci 6 masu sarrafawa:

Keɓancewa da Kauri: Zaɓuɓɓuka waɗanda suka haɗa da ƙayyadaddun bayanai na 200μm, 300μm, da 350μm
2. Kula da Juriya: Daidaita yawan amfani da maganin n-type daga 1×10¹⁸ zuwa 5×10¹⁸ cm⁻³

3. Tsarin Lu'ulu'u: Taimako ga fannoni da yawa ciki har da (0001) a gefen kusurwa 4° ko 8°

4. Ayyukan Gwaji: Cikakken rahotannin gwajin siga na matakin wafer

Lokacin da muke ɗauka a yanzu daga yin samfuri zuwa yawan samarwa na iya zama ɗan gajeren lokaci har zuwa makonni 8. Ga abokan ciniki masu dabarun, muna ba da ayyukan haɓaka tsari na musamman don tabbatar da daidaito da buƙatun na'ura.