Kauri na LN-on-Si mai inci 6-8 inci 0.3-50 μm Si/SiC/Sapphire na Kayan Aiki

Kauri na LN-on-Si mai inci 6-8 0.3-50 μm Si/SiC/Sapphire na Kayan Aiki Hoton da aka Fito

Takaitaccen Bayani:

Tsarin LN-on-Si mai inci 6 zuwa 8 mai haɗin gwiwa abu ne mai inganci wanda ke haɗa siraran lithium niobate (LN) guda ɗaya tare da siraran silicon (Si), tare da kauri daga 0.3 μm zuwa 50 μm. An tsara shi don ƙera na'urorin semiconductor na zamani da optoelectronic. Ta amfani da dabarun haɓaka haɗin gwiwa ko epitaxial, wannan siraran yana tabbatar da ingancin siraran LN mai inganci yayin da yake amfani da babban girman wafer (inci 6 zuwa 8) na siraran silicon don haɓaka ingancin samarwa da inganci mai kyau.
Idan aka kwatanta da kayan LN na yau da kullun, kayan haɗin LN-on-Si mai inci 6 zuwa 8 yana ba da daidaiton zafi mai kyau da kwanciyar hankali na injiniya, wanda hakan ya sa ya dace da manyan kayan aiki kamar SiC ko sapphire don biyan takamaiman buƙatun aikace-aikace, gami da na'urorin RF masu yawan mita, na'urorin photonics masu haɗaka, da na'urori masu auna MEMS.

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Siffofi

Sigogi na fasaha

0.3-50μm LN/LT akan Masu Rufe Insulators
Babban Layer
diamita	Inci 6-8
Hanya	X, Z, Y-42 da sauransu.
Kayan Aiki	LT, LN
Kauri	0.3-50μm
Substrate (An ƙayyade)
Kayan Aiki	Si, SiC, Sapphire, Spinel, Quartz

Mahimman Sifofi

An bambanta nau'in haɗin LN-on-Si mai inci 6 zuwa 8 ta hanyar keɓantattun kayansa da sigogin da za a iya gyarawa, wanda ke ba da damar amfani da shi a masana'antar semiconductor da optoelectronic:

1. Dacewar Babban Wafer: Girman wafer mai inci 6 zuwa 8 yana tabbatar da haɗin kai mara matsala tare da layukan ƙera semiconductor da ake da su (misali, hanyoyin CMOS), rage farashin samarwa da kuma ba da damar samar da kayayyaki da yawa.

2. Ingancin Layin Kwalliya Mai Kyau: Ingantaccen dabarun haɗa epitaxial ko haɗin kai suna tabbatar da ƙarancin lahani a cikin fim ɗin siririn LN, wanda hakan ya sa ya dace da masu daidaita haske masu aiki, matatun ruwa na saman sauti (SAW), da sauran na'urori masu daidaito.

3. Kauri Mai Daidaitawa (0.3–50 μm): Matakan LN masu siriri sosai (<1 μm) sun dace da haɗakar kwakwalwan photonic, yayin da matakan kauri (10–50 μm) suna tallafawa na'urorin RF masu ƙarfi ko na'urori masu auna piezoelectric.

4. Zaɓuɓɓukan Substrate da yawa: Baya ga Si, ana iya zaɓar SiC (mai jure zafi mai yawa) ko sapphire (mai jure zafi mai yawa) a matsayin kayan tushe don biyan buƙatun aikace-aikacen mita mai yawa, zafi mai yawa, ko mai ƙarfi.

5. Kwanciyar hankali da na'urar lantarki: Silikon yana ba da ingantaccen tallafi na injiniya, yana rage karkacewa ko tsagewa yayin sarrafawa da kuma inganta yawan amfanin na'urar.

Waɗannan fasalulluka suna sanya substrate mai inci 6 zuwa 8 na LN-on-Si a matsayin kayan da aka fi so don fasahar zamani kamar sadarwa ta 5G, LiDAR, da kuma na'urorin hangen nesa na quantum.

Babban Aikace-aikace

An yi amfani da sinadarin LN-on-Si mai tsawon inci 6 zuwa 8 a masana'antun fasahar zamani saboda kyawunsa na electro-optic, piezoelectric, da kuma acoustic:

1. Sadarwar Haske da Haɗaɗɗen Photonics: Yana ba da damar masu amfani da wutar lantarki mai sauri, jagororin raƙuman ruwa, da kuma da'irori masu haɗakar photonic (PICs), yana magance buƙatun bandwidth na cibiyoyin bayanai da hanyoyin sadarwa na fiber-optic.

Na'urorin RF 2.5G/6G: Babban ma'aunin piezoelectric na LN ya sa ya zama mai dacewa don matatun ruwa na saman acoustic (SAW) da kuma babban acoustic wave (BAW), wanda ke haɓaka sarrafa sigina a tashoshin tushe na 5G da na'urorin hannu.

3.MEMS da Na'urori Masu auna sigina: Tasirin piezoelectric na LN-on-Si yana sauƙaƙa na'urorin auna sigina masu saurin amsawa, na'urori masu auna sigina, da na'urorin auna sigina masu auna sigina masu ƙarfin amsawa, da na'urorin auna sigina masu auna sigina masu ƙarfin amsawa, da kuma ...

4. Fasahohin Quantum: A matsayin kayan gani mara layi, ana amfani da siraran fina-finan LN a cikin tushen hasken kwantum (misali, nau'ikan photon da aka haɗa) da kuma kwakwalwan kwantum da aka haɗa.

5. Lasers da na'urorin hangen nesa marasa layi: Layukan LN masu siriri sosai suna ba da damar ingantaccen samar da na'urori masu daidaitawa na biyu (SHG) da na'urorin oscillation na optical parametric (OPO) don sarrafa laser da nazarin spectroscopic.

Tsarin LN-on-Si mai inci 6 zuwa 8 wanda aka daidaita yana ba da damar ƙera waɗannan na'urori a cikin manyan kayan wafer, wanda hakan ke rage farashin samarwa sosai.

Keɓancewa da Ayyuka

Muna ba da cikakken tallafin fasaha da ayyukan keɓancewa don kayan haɗin LN-on-Si mai inci 6 zuwa 8 don biyan buƙatun bincike da samarwa daban-daban:

1. Ƙirƙirar Musamman: Za a iya tsara kauri na fim ɗin LN (0.3–50 μm), yanayin lu'ulu'u (yanke-X/Y), da kayan substrate (Si/SiC/sapphire) don inganta aikin na'urar.

2. Tsarin Tsarin Wafer: Samar da wafer mai inci 6 da inci 8 mai yawa, gami da ayyukan baya kamar yankewa, gogewa, da shafawa, wanda ke tabbatar da cewa substrates sun shirya don haɗa na'urori.

3. Shawarwari da Gwaji na Fasaha: Siffanta kayan aiki (misali, XRD, AFM), gwajin aikin lantarki, da tallafin kwaikwayon na'urori don hanzarta tabbatar da ƙira.

Manufarmu ita ce mu kafa wani abu mai girman inci 6 zuwa 8 mai LN-on-Si a matsayin babban mafita ga aikace-aikacen optoelectronic da semiconductor, wanda ke ba da tallafi daga ƙarshe zuwa ƙarshe daga bincike da ci gaba zuwa samarwa mai yawa.

Kammalawa

Tsarin hada-hadar LN-on-Si mai inci 6 zuwa 8, tare da girman wafer ɗinsa mai girma, ingancin kayansa mai kyau, da kuma sauƙin amfani, yana haifar da ci gaba a fannin sadarwa ta gani, fasahar 5G RF, da fasahar quantum. Ko don manyan masana'antu ko mafita na musamman, muna isar da ingantattun substrates da ayyuka masu dacewa don ƙarfafa ƙirƙira ta fasaha.