6 inch-8 inch LN-on-Si Composite Substrate Kauri 0.3-50 μm Si/SiC/Sapphire na Kayayyaki

6 inch-8 inch LN-on-Si Haɗaɗɗen Substrate Kauri 0.3-50 μm Si/SiC/Sapphire na Materials Featured Hoton

Takaitaccen Bayani:

6-inch zuwa 8-inch LN-on-Si composite substrate kayan aiki ne mai girma wanda ke haɗa fina-finan bakin ciki-crystal lithium niobate (LN) na bakin ciki tare da silin (Si), tare da kauri daga 0.3 μm zuwa 50 μm. An ƙera shi don haɓakar semiconductor da ƙirar na'urar optoelectronic. Yin amfani da ingantattun haɗin gwiwa ko dabarun haɓaka epitaxial, wannan madaidaicin yana tabbatar da ingantaccen ingancin fim ɗin LN na bakin ciki yayin haɓaka girman girman wafer (6-inch zuwa 8-inch) na ƙirar silicon don haɓaka ingantaccen samarwa da ƙimar farashi.
Idan aka kwatanta da kayan aikin LN na al'ada, 6-inch zuwa 8-inch LN-on-Si composite substrate yana ba da ingantaccen yanayin zafi da kwanciyar hankali na inji, yana sa ya dace da sarrafa matakin wafer mai girma. Bugu da ƙari, za a iya zaɓar madadin kayan tushe kamar SiC ko sapphire don saduwa da takamaiman buƙatun aikace-aikacen, gami da manyan na'urorin RF, hadedde photonics, da firikwensin MEMS.

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Siffofin fasaha

0.3-50μm LN/LT akan Insulators
Babban Layer
Diamita	6-8 inci
Gabatarwa	X, Z, Y-42 da dai sauransu.
Kayayyaki	LT, LN
Kauri	0.3-50 m
Substrate (Na musamman)
Kayan abu	Si, SiC, Sapphire, Spinel, Quartz

Mabuɗin Siffofin

6-inch zuwa 8-inch LN-on-Si composite substrate an bambanta shi ta hanyar kayan masarufi na musamman da sigogi masu daidaitawa, yana ba da damar fa'ida sosai a masana'antar semiconductor da optoelectronic:

1.Large Wafer Compatibility: Girman wafer na 6-inch zuwa 8-inch yana tabbatar da haɗin kai maras kyau tare da layukan ƙirƙira na semiconductor (misali, hanyoyin CMOS), rage farashin samarwa da ba da damar samar da taro.

2.High Crystalline Quality: Inganta epitaxial ko bonding dabaru tabbatar da low lahani yawa a cikin LN bakin ciki film, yin shi manufa domin high-yi Tantancewar modulators, surface acoustic kalaman (SAW) tace, da sauran daidaitattun na'urorin.

3. Daidaitacce Kauri (0.3-50 μm): Ultrathin LN yadudduka (<1 μm) sun dace da haɗaɗɗen kwakwalwan hotuna na photonic, yayin da ƙananan yadudduka (10-50 μm) suna goyan bayan na'urorin RF masu ƙarfi ko na'urori masu auna sigina na piezoelectric.

4.Multiple Substrate Zaɓuɓɓuka: Bugu da ƙari, Si, SiC (high thermal conductivity) ko sapphire (high insulation) za a iya zaba a matsayin kayan tushe don saduwa da buƙatun aikace-aikace masu girma, zafi mai zafi, ko babban iko.

5.Thermal da Mechanical Stability: The silicon substrate yana ba da goyon bayan injiniya mai ƙarfi, rage girman warping ko fashewa yayin aiki da inganta yawan amfanin na'urar.

Waɗannan halayen suna sanya 6-inch zuwa 8-inch LN-on-Si composite substrate azaman kayan da aka fi so don fasahar yankan-baki kamar sadarwar 5G, LiDAR, da na'urorin gani na adadi.

Babban Aikace-aikace

6-inch zuwa 8-inch LN-on-Si composite substrate an karɓa sosai a cikin manyan masana'antun fasaha saboda na musamman na lantarki, piezoelectric, da kaddarorin sauti:

1.Optical Communications and Integrated Photonics: Yana ba da damar masu amfani da wutar lantarki mai sauri, waveguides, da photonic hadedde circuits (PICs), magance buƙatun bandwidth na cibiyoyin bayanai da cibiyoyin sadarwa na fiber-optic.

2.5G / 6G RF na'urorin: Babban madaidaicin piezoelectric na LN ya sa ya zama manufa don tasirin sautin murya (SAW) da matattarar sauti mai ƙarfi (BAW), haɓaka sarrafa siginar a cikin tashoshin tushe na 5G da na'urorin hannu.

3.MEMS da Sensors: Sakamakon piezoelectric na LN-on-Si yana sauƙaƙe haɓakar haɓakar haɓakar haɓakar haɓaka, biosensors da ultrasonic transducers don aikace-aikacen likita da masana'antu.

4.Quantum Technologies: A matsayin kayan aikin gani mara kyau, ana amfani da fina-finai na LN na bakin ciki a cikin maɓuɓɓugan haske na ƙididdigewa (misali, nau'i-nau'i na photon da aka haɗa) da kuma haɗaɗɗen kwakwalwan kwamfuta.

5.Lasers da Ƙwararrun Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙadda ) na Ƙaƙa na Ƙaƙa na Ƙaƙa ) na Ƙarfafawa na Ƙarfafawa na Ƙarfafawa na Ƙarshe na Ƙarshe (SHG ) da na Ƙarfafawa na Ƙarƙashin Ƙarƙashin Ƙarfafa (OPO) ya yi don sarrafa Laser da bincike na spectroscopic.

Daidaitaccen 6-inch zuwa 8-inch LN-on-Si na'ura mai haɗawa yana ba da damar kera waɗannan na'urori a cikin manyan kayan wafer, rage farashin samarwa sosai.

Keɓancewa da Sabis

Muna ba da cikakkiyar tallafin fasaha da sabis na gyare-gyare don 6-inch zuwa 8-inch LN-on-Si composite substrate don saduwa da R&D iri-iri da buƙatun samarwa:

1.Custom Fabrication: LN film kauri (0.3-50 μm), crystal fuskantarwa (X-cut / Y-cut), da substrate abu (Si / SiC / sapphire) za a iya kerarre don inganta na'urar yi.

2.Wafer-Level Processing: Babban wadata na 6-inch da 8-inch wafers, ciki har da ayyuka na baya-baya kamar dicing, polishing, da kuma shafi, tabbatar da substrates suna shirye don haɗin na'urar.

3.Shawarwari na Fasaha da Gwaji: Halayen kayan aiki (misali, XRD, AFM), gwajin aikin lantarki-optic, da goyon bayan kwaikwaiyo na na'ura don haɓaka ƙirar ƙira.

Manufarmu ita ce kafa 6-inch zuwa 8-inch LN-on-Si composite substrate a matsayin ainihin bayani na kayan aiki don aikace-aikacen optoelectronic da semiconductor, yana ba da tallafi na ƙarshe zuwa ƙarshe daga R&D zuwa samarwa da yawa.

Kammalawa

6-inch zuwa 8-inch LN-on-Si composite substrate, tare da girman girman wafer ɗin sa, ingantaccen kayan abu, da juzu'i, yana haifar da ci gaba a cikin hanyoyin sadarwa na gani, 5G RF, da fasahar ƙira. Ko don masana'anta mai girma ko na musamman, muna isar da ingantattun abubuwa da ƙarin ayyuka don ƙarfafa ƙirƙira fasaha.